Photoconductivity Spectra of n-type CuInSe2 Single Crystals

Photoconductivity spectra of n-type CuInSe₂ single crystals are measured in the photon energy range hv = 0.75 – 3.1 eV and as a function of temperature in the range T = 80 – 320 K. It is found that the photoconductivity of as-grown crystals is a nearly pure surface effect, while sensitization of the crystal volume is observed only after sufficiently long annealing in the presence of powdered material. To explain the temperature dependence of the photoconductivity carrier trapping processes must be taken into account.     

Optical Investigation of Defects in p-type CuInSe2 Single Crystals

Optical absorption spectra in the photon energy range from 0.03 to 1.1 eV and photoreflectance spectra in the range of the fundamental edge are measured on p-type CuInSe₂ single crystals. Besides a dominant contribution to the absorption coefficient due to intervalence band transitions below about 0.75 eV the spectra revealed five additional structures that can be ascribed to defect induced optical transitions with characteristic energies between 0.48 and 0.72 eV. Based on a comparison of the near-edge optical absorption and photoreflectance spectra a shallow defect (donor or acceptor) with an ionisation energy of about 46 meV was identified.     

Electrical Properties of CuInSe2 Single Crystals Implanted with Xenon

Both p-type and n-type CuInSe₂ single crystals were implanted with 40 keV ¹³⁰Xe⁺ ions up to doses of 5 · 10¹⁶ cm⁻². Implanted layers on p-type substrates showed an initial increase of the resistivity followed by a continuous decrease of the resistivity at higher doses. Implanted layers on n-type substrates gave also an increase of the resistivity at lower doses, but at higher doses a conductivity type conversion from n-type to p-type took place, followed by a decrease of the resistivity. To explain the experimental results it is supposed that the increase of the resistivity is mainly due to charge carrier scattering at extended defects while the decrease of the resistivity at high doses is due to the predominant creation of intrinsic acceptor states during implantation.     

Infrared Optical Characterization of Thermally Oxidized CuInSe2 Single Crystals

Infrared reflectivity spectra of thermally oxidized CuInSe₂ single crystals are measured at room temperature in the wavenumber range from 180 to 4000 cm⁻¹. A Kramers-Kronig analysis of the spectra reveals seven vibrational modes with frequencies which agree with mode frequencies in In₂O₃. No vibrational modes due to Cu–O and Se–O bonds could be observed. The results obtained are compared with previous studies of oxidized CuInSe₂ crystals.     

Optical Properties of CuInSe2 Single Crystals Grown by the Vertical Bridgman Technique

The optical absorption near the fundamental edge of n-type CuInSe₂ single crystals was studied for samples having different impurity concentrations. It is found that with increasing impurity concentration the gap energy decreases whilst the tail absorption below the edge and its characteristic energy increase. It is concluded that band-gap narrowing due to high ionized impurity concentrations plays an important role in CuInSe₂ single crystals.     

Photoacoustic Spectroscopy of Defect States in Etched and Air-annealed CuInSe2 Single Crystals

Photoacoustic spectra of cleaved, polished and etched, and air-annealed n-type CuInSe₂ single crystals are measured at different frequencies between 30 and 312 Hz. The spectra related to the bulk of the crystals exhibit five structures due to defects that are also present in p-type crystals. Polishing and etching as well as subsequent air annealing at 100, 200 and 300 °C reveal rather complex changes of the defect equilibrium in the near-surface region of the crystals which include both relative concentration changes of existing defects and creation of new defects. The results for polished and etched crystals correspond to trends expected from etching induced local modifications of the composition and structure as revealed by electron spectroscopies and ion channeling. Air annealing is found to affect all existing defects and to create up to five new defects which cannot be explained in terms of the related point defect model proposed by CAHEN and NOUFI.     

Luminescence and Photoconductivity Caused by Antisite Defects in CdIn2S4 Single Crystals

Results of a study of the influence of nonstoichiometry as well as of annealing and argon ion implantation on photoluminescence and photoconductivity spectra of cadmium thioindate single crystals are presented. The energy positions of levels of antisite In_cd and Cd_In defects are found. The role of antisite defects in the process of conductivity compensation is analysed.     

Electrical and Optical Characterization of Oxygen doped CuInSe2 Crystals

From a combined study of the electrical properties between room temperature and 77 K and optical absorption at 300 K of bulk CuInSe₂ samples doped with different oxygen concentrations, two shallow acceptor levels are found. The activation energy E_A1 and E_A2 of these levels in the dilute limit tends to be around 30 and 36 meV, respectively. The increase of E_A1 and decrease of E_A2 with the increase of oxygen content can be explained consistently on the basis that the ratio of Cu to In atoms increases with the increase of oxygen incorporated into CuInSe₂ lattice.     

Protonic Conductivity and Photoconductivity Studies on H3PW12O40x21H2O Single Crystals

Protonic conductivity measurements are reported for H₃PW₁₂O₄₀x21H₂O single crystals in the temperature range 77 to 303 K. At room temperature, the conductivity is 0.18 Sm^‐1 and falls to a minimum of 0.26×10^‐3 Sm^‐1 at 188 K. An anomalous behavior in conductivity observed in the temperature range 263 to 283 K is reported and it is essentially due to the disordered structure of water molecules. The activation energy determined from the least squares analysis in the temperature range 278 to 303 K and 188 to 273 K are 0.38 and 0.15 eV respectively. The observed conductivity parameter results support the vehicle mechanism as the proton conduction mechanism in this single crystal. Using the Nernst‐Einstein relation, the proton diffusion coefficient is calculated and found to be 1.29×10^‐11 m²s^‐1 at room temperature. Steady state photoconductivity is measured at room temperature for various intensities and the material is found to be photosensitive. The variation of photocurrent with different illumination levels is found to be linear in these single crystals. The transient photoconductivity measurement shows that the photo‐induced responses are moderate in the beginning and slow during decay process with respect to time.     

Photoluminescence Spectra of GaS0.75Se0.25 Layered Single Crystals

Photoluminescence (PL) spectra of GaS_0.75Se_0.25 layered single crystals have been studied in the wavelength region of 500‐850 nm and in the temperature range of 10‐200 K. Two PL bands centered at 527 ( 2.353 eV, A‐band) and 658 nm (1.884 eV, B‐band) were observed at T = 10 K. Variations of both bands have been studied as a function of excitation laser intensity in the range from 8 × 10^‐3 to 10.7 W cm^‐2. These bands are attributed to recombination of charge carriers through donor‐acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located 0.043 and 0.064 eV below the bottom of conduction band to acceptor levels located 0.088 and 0.536 eV above the top of the valence band are suggested to be responsible for the observed A‐ and B‐bands in the PL spectra, respectively.     

Modification of the CuInSe2 Crystal Surface during Polishing and Annealing

The RBS/channelling technique was used to study the near-surface damage characteristics of CuInSe₂ crystals after polishing with 0.05 μm grade alumina and subsequent annealing up to temperatures of 600 °C. A comparative RUMP and damage density depth profile analysis of the channelling spectra revealed a polish-induced near-surface disordered layer with a thickness close to 40 nm. Up to annealing temperatures of about 400 °C a gradual overall decrease of the defect density in the damaged layer is observed without detectable changes in its thickness. An indium-rich surface layer is formed after vacuum annealing at 600 °C.     

6H-SiC单晶的中子辐照损伤及其退火特性研究

用剂量为1.72×10¹⁹ n/cm²和1.67×10²⁰ n/cm²的中子对掺氮6H-SiC单晶进行辐照,利用紫外-可见(UV-Vis)吸收光谱等方法研究了辐照引起的晶格损伤及随退火温度的回复过程。结果表明:中子辐照产生的大量缺陷使SiC的光吸收明显增加;光学带隙能随辐照剂量的增加而降低,这与禁带中引入的局域态缺陷能级有关。光吸收边出现强烈的连续吸收可能归因于辐照产生的不同类型缺陷簇或局部非晶区域的光散射。对两个剂量辐照的样品进行室温到1 600℃的等时退火,发现两个剂量辐照产生的晶格损伤所需的退火回复温度不同,但退火回复过程都呈现出以800℃为转折点的两个相同阶段。     

黄铜矿型CuInSe2单晶光电材料研究评述

Cu-Ⅲ-Ⅵ2族系列的黄铜矿型半导体化合物可用于光电装置,CuInSe2是Ⅰ-Ⅲ-Ⅵ2族的一个成员,其带隙能为1eV,光吸收系数较大,有希望成为潜在的太阳能材料.本文阐述了CuInSe2晶体的光电性能及在作为太阳能材料方面的应用,对合成CuInSe2单晶的各种生长方法进行了归纳和总结,并指出了研究中存在的问题和今后努力的方向.     

Structure,Spectra and Conductivity of Oxidized Zinc Phthalocyanine Single Crystals

Electrode grown ZnPcCl and ZnPcCl_xBr(_1-X) crystals have been characterized by X Ray crystallography, Infra red absorption spectroscopy and elemental X Ray analysis. Their semi conductive properties are discussed on the basis of the helical stack and intermolecuiar overlaps between macrocyclic ligands.     

Crystal Data,Photoconductivity and Carrier Scattering Mechanisms in CuIn5S8 Single Crystals

The X‐ray diffraction has revealed that CuIn₅S₈ is a single phase crystal of cubic spinel structure. The value of the unit cell parameter for this crystal is 1.06736 nm. The crystal is assigned to the conventional space group Fd3m. The photocurrent is found to have the characteristic of monomolecular and bimolecular recombination at low and high illumination intensities, respectively. The electrical resistivity and Hall effect of CuIn₅S₈ crystals are measured in the temperature range of 50‐400 K. The crystals are found to be intrinsic and extrinsic above and below 300 K, respectively. An energy band gap of ∼1.35 eV at 0 K, a carrier effective mass of 0.2 m₀ , an acceptor to donor concentration ratio of 0.9, an acoustic phonon deformation potential of 10 eV and a nonpolar optical phonon deformation potential of 15 eV are identified from the resistivity and Hall measurements. The Hall mobility data are analyzed assuming the carrier scattering by polar optical phonons, acoustic combined with nonpolar optical phonons, and ionized impurities.     

Structural and Density Changes of Rhenium Single Crystals Upon Rolling and Annealing

The rhenium crystals were rolled in the {1000} 〈112 0〉 orientation. Rolling produces cracks in crystals at low deformation (ϵ = 30%). It has been shown that microcracks in the volume of the crystal arise at a more earlier deformation stage than visible surface cracks. Recrystallization during subsequent annealing is strongly intensified with the start of crack formation. Stepwise facets of recrystallizated grains are often observed, this fact being connected with twinning lamellae recrystallization. Microcracks in the crystal body are completely eliminated during high temperature annealing. This process caused by diffusion over microcracks surfaces.     

CdSiP2单晶退火研究

以高纯(6N) Cd、Si、P单质为原料,采用双温区气相输运法和改进的垂直布里奇曼法合成生长出等径尺寸为φ17 mm×65 mm的CdSiP2单晶锭,经切割抛光得到CdSiP2晶片.将样品分别置于真空、镉气氛、磷气氛和在同成分粉末包裹中进行了退火试验.采用X射线能量色散谱仪(EDS)和傅里叶红外分光光度计(FTIR)对退火前后的晶片组分及红外透过谱进行了测试分析.结果表明:四种氛围退火前后样品的组分变化不大,原子比接近理想的化学计量比;镉气氛下退火对晶片的红外透过率改善较为显著,在1600 ～ 4500 cm-1范围内的红外透过率由46;～52;提高到51; ～57;,接近CdSiP2晶体红外透过率的理论值.     

硼和氮掺杂金刚石单晶的合成与Raman光谱研究

氮(N)元素和硼(B)元素为金刚石晶体中常见的两种杂质元素,它们对金刚石的物理化学性质有着重要的影响.本文使用高温高压温度梯度法合成了分别含有氮和硼杂质的金刚石单晶,并使用Raman光谱对晶体进行分析研究.研究发现:随着金刚石生长体系内杂质的引入,晶体的质量变差;当生长体系含有氮杂质时,生长的含氮金刚石晶体的特征峰谱线向低波数偏移,晶体的应力表现为拉应力;当生长体系含有硼杂质时,生长的含氮金刚石晶体的特征峰谱线向高波数偏移,晶体的应力表现为压应力.本研究将有助于丰富金刚石单晶掺杂的认识.     

磷锗锌单晶体的腐蚀研究

报道了一种新的ZnGeP2晶体择优腐蚀剂及其腐蚀工艺,即先采用研磨、物理机械抛光和HCl+HNO3热化学抛光获得表面平整无划痕的ZnGeP2晶片,然后将晶片在室温下采用HF(40;):HNO3(65;):CH3COOH(99.5;):H2O:I2=2 mL:2 mL:1 mL:1 mL:4 mg腐蚀剂超声振荡腐蚀8 min;在扫描电镜下观察到ZGP(110)和(204)晶面的腐蚀坑,蚀坑形貌清晰,具有立体感,(110)晶面蚀坑呈四边形,(204)晶面蚀坑呈五边形,取向一致,蚀坑密度(EPD)约为104/cm2.从理论上对蚀坑形貌的形成机理进行了分析.