共查询到20条相似文献,搜索用时 15 毫秒
1.
垂直Bridgman法生长Cd1-XMnxTe晶体的缺陷研究 总被引:1,自引:0,他引:1
本文采用垂直布里奇曼(Bridgman)法生长了尺寸为Φ30 mm×130mm的Cd1-xMnxTe晶体,利用Nakagawa腐蚀液显示了晶体的位错、Te夹杂相和孪晶缺陷,并采用傅立叶变换红外光谱仪研究了晶体的红外透过率与晶体缺陷之间的关系.结果表明:生长态Cd1-xMnxTe晶体的位错密度为104~105 cm-2,Te夹杂相密度为103~104cm-2,晶体中的孪晶主要为共格孪晶,孪晶面为[111]面,且平行于晶体生长方向.在入射光波数4000~500 cm-1范围,晶体的红外透过率为36.7;~55.3;,红外透过率越大,表明晶体的位错和Te夹杂相密度越低,晶体对该波长范围的红外光表现为晶格吸收和自由载流子吸收. 相似文献
2.
3.
坩埚下降法生长钨酸镉闪烁单晶的晶体缺陷 总被引:1,自引:0,他引:1
采用坩埚下降法生长出大尺寸CdWO4单晶,通过光学显微镜、电子探针观察分析了所获CdWO4单晶的典型晶体缺陷,包括晶体开裂、丝状包裹物和晶体黑化.结果表明,CdWO4单晶存在显著的解理特性,常出现因热应力导致的沿(010)解理面的晶体开裂;当采用富镉多晶料进行单晶生长时,所获单晶棒的下部常出现沿轴向分布的丝状包裹物,电子探针分析证实这种丝状包裹物是熔体内过量CdO沉积所致;在氮气氛中进行高温退火处理,CdWO4单晶还会出现黑化现象. 相似文献
4.
5.
下降法生长PWO晶体中光散射中心的观察与分析 总被引:3,自引:3,他引:0
本文根据光学显微镜、扫描电镜、电子探针微区成分分析和晶体退火过程的实时观察,将存在于PbWO4晶体中的光散射中心分为3种类型:气态包裹物、固态包裹物和微空洞.根据电子探针微区成分分析和XRD物相测定,认为固态包裹物的组成为WO3,Pb2WO5和杂质聚集形成的低共熔点化合物.WO3颗粒是原料中局部WO3未充分固相反应的残留物;Pb2WO5是WO3和局部过量的PbO反应形成的.微空洞是晶体中空位聚集在一起形成的二次缺陷,晶体中的光散射朦芯主要由微空洞构成.通过对光散射中心的成因分析,提出了消除此类宏观缺陷的工艺措施. 相似文献
6.
Hg1−xCdxTe layers on CdTe substrates were grown from Te-rich melt solutions by a vertical dipping technique using a special quasi-closed system with ground-glass sealing. Results are good reproducibilities of the electrical properties after annealing in Hg-rich atmosphere (p77 ≈ 2 · 1016 cm−3 μ77 ≈ 500 cm2 V−1 s−1) and of the x-value, respectively. A horizontal position of the substrate downwards to the melt solution yields, in difference to a vertical one, to homogeneous layer thicknesses. Short meltback steps before growth leads to sharper profiles of composition. 相似文献
7.
Bridgman法生长的大尺寸钨酸铅晶体的光学和闪烁性能 总被引:2,自引:0,他引:2
本文报道了我们采用改进的Bridgman法为欧洲核子研究中心(CERN)大型强子对撞机(LHC)上的紧凑型μ子螺线管(CMS)实验生长的大尺寸掺Y3+钨酸铅闪烁晶体,给出了晶体的光学和闪烁性能,如光致发光谱、X射线致发光光谱、纵/横向的透射光谱、光产额以及辐照硬度.测试结果表明,掺Y2O3的钨酸铅晶体光产额很高(>13pe/MeV),且全为100ns以内的快发光,其辐照硬度已接近CMS电磁量能器(ECAL)端帽晶体的要求,同一批晶体彼此间的性能一致性好. 相似文献
8.
9.
The optical absorption near the fundamental edge of n-type CuInSe2 single crystals was studied for samples having different impurity concentrations. It is found that with increasing impurity concentration the gap energy decreases whilst the tail absorption below the edge and its characteristic energy increase. It is concluded that band-gap narrowing due to high ionized impurity concentrations plays an important role in CuInSe2 single crystals. 相似文献
10.
通过选择合适的原料配比(Li2O 48.6mol;,Nb2O5 51.4mol;),控制固液界面处的温度梯度为20~40℃/cm,晶体生长速度为0.6~1.5mm/h,采用密闭条件下的坩埚下降法工艺成功地生长出了具有良好光学均匀性的完整LiNbO3单晶.用X射线粉末衍射表征获得的LiNbO3晶相,讨论了若干工艺条件对晶体组分与质量的影响.测定了未密闭条件下生长的LiNbO3晶体不同部位样品的紫外可见光谱,发现其吸收边沿生长方向发生红移,并讨论了产生此现象的原因. 相似文献
11.
12.
13.
Monocrystals of sphalerite-type CdTe1-xSex were grown by self-selecting vapour growth SSVG in the horizontal configuration. As measured on a series of points of a (110) split plane, the “rocking curve” half-width was below 30 arcsec, while the lattice parameter measurements demonstrated the molar fraction x varying within 0.0024 (0.24 %). The values of x obtained from photoluminescence spectra taken from samples of different quality were in the ranges of 0.0034 (0.34 %) and 0.0047 (0.47 %). On the basis of the photoluminescence measurements, the maximum difference in x within the crystallised material was estimated to be 0.01 (1 %). 相似文献
14.
15.
Prof. Dr. Irina Nicoarǎ A. Pusztai Mirela Nicolov 《Crystal Research and Technology》1997,32(3):413-422
The effect of the pulling rate and of the furnace configuration on the interface shape in semitransparent crystals grown by the vertical Bridgman method are studied by finite—element analysis. 相似文献
16.
The single crystals of Lead Iodide have been grown by gel method. X‐ray diffraction studies on these crystals shows that the lattice parameters of grown crystals are almost matching with reported values. The results of detailed studies made on the microstructures of Lead Iodide crystals, have been described. The observations of the faces of these crystals revealed that they have grown by layer as well as spiral mechanisms. The probable role of these parameters is explained along with the surface microstructures on these various shaped crystals. 相似文献
17.
18.
采用Te溶剂-Bridgman法生长了尺寸为φ30 mm× 60 mm的Cd0.9Mn0.1Te:In晶锭,通过淬火得到了生长界面形貌.测试了晶片在近红外波段的透过率和电阻;采用化学腐蚀的方法观察了晶片中位错,Te夹杂和孪晶界;采用光学显微镜和红外成像显微镜观察了生长界面处附近的形貌.测试结果表明,晶锭中部结晶质量较好的晶片红外透过率达到60%,电阻率达到2.828×1011Ω · cm.位错密度在106 cm-2数量级,Te夹杂密度为1.9×104 cm-2,同时孪晶密度明显低于Bridgman法生长的晶锭.生长界面宏观形貌平整,呈现微凹界面.但由于淬火过程的快速生长,界面微观形貌发生变化,呈现不规则界面,并在界面附近形成富Te相的包裹. 相似文献
19.