Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

On the Critical Growth Velocities for the Presence of Faces on Growing Crystals

Faces of three-dimensional crystals have been divided into edge and corner ones to describe the phenomenon of their disappearance and appearance during the crystal growth. The expression for the critical growth velocity governing the presence of corner faces has been derived and verified and the validity of the previous relationship (SZURGOT , PRYWER ) for the edge faces confirmed. Three nearest neighbours control the presence of corner faces and two neighbours decide on the edge faces.     

Effect of Supersaturation on Disappearance of Faces of Growing Crystals

Growth conditions affect the velocities of disappearance and lifetime of faces of growing crystals. Supersaturation is a factor which causes either an increase or a decrease in velocities of disappearance of faces and their lifetime depending on the mechanism and kinetics of growth of disappearing and adjacent faces. The possible relationships between velocities of disappearance of faces, their lifetime and supersaturation have been derived and discussed.     

On the Formation of Thick Sector Boundaries by Appearance and Disappearance of Faces of Crystals

Wide sector boundaries revealed in KBC crystals by chemical etching have been observed and analysed. It was established that the boundaries represent sectors of small faces appearing and vanishing in the habit during crystal growth. This nature of thick boundaries has been confirmed by the analysis of values of relative growth velocities of faces with respect to the critical velocities governing the presence of faces on growing crystals.     

Direct Growth of Aggregates on {110} Faces of Cadmium Mercury Thiocyanate Crystals

New growth phenomena ‐ direct incorporation of aggregates have been observed on the {110} faces of cadmium mercury thiocyanate CdHg(SCN)₄ crystals by atomic force microscopy. These aggregates grow in two forms: some directly cover up the steps and forms new growth layers; while others are just incorporated at the step edges. These aggregates, which are mostly oriented along [111] direction, are formed by small columnar structural units. The aggregates have the similar structure of CdHg(SCN)₄ crystals and greatly vary in nature with the variation of solution supersaturation σ and growth time t. With the increase of σ the aggregates become larger, consistent with the variation of growth units dimension with the supersaturation; and with the increase of growth time the aggregates become more structurally substantial. These observations have led to a new understanding about the crystal growth.     

Indices of Faces Developing on Czochralski-Grown Paratellurite Crystals

Crystallography Reports - The known data on the morphology of paratellurite single crystals grown from melt by the Czochralski method are analyzed. The structure of faces is studied by scanning...     

离子晶体生长机理及其生长习性

从阴、阳离子在界面上互相配位的角度介绍了一种新的微观生长机理模型,指出了生长基元进入晶格的驱动力为离子之间的静电引力,其相对大小由各界面上离子的静电键强近似测定.讨论了完好晶体(如ZnS、CsCl、PZT和PbWO4晶体)的生长习性.提出了一种新的生长习性判定法则.即当晶体生长由台阶产生速度决定时,晶体的生长习性与晶体中络合能力最小的离子在各界面上的配位数有关.在界面上离子的配位数越小,该晶面的生长速度越快.当晶体的生长速度由台阶移动速度决定时,晶体的生长习性与晶体中络合能力最小的离子在界面上的密度有关.在界面上离子的密度越小,该晶面的生长速度越快.     

L-丙氨酸掺杂下ZTS晶体(100)面台阶动力学实时研究

利用光学显微镜对L-丙氨酸掺杂下ZTS晶体(100)面台阶推移进行了实时观察。测量了不同掺杂浓度、过饱和度及生长温度下的台阶平均推移速度。实验结果表明:随掺杂浓度的增加,台阶平均推移速度先增加后减小,在掺杂浓度为2mol%时,台阶平均推移速度最大;而随过饱和度的增加,台阶平均推移速度线性增加。计算了台阶动力学系数与单台阶的活化能,得到掺杂后,台阶动力学系数增大,单台阶活化能减小。运用台阶动力学系数的定义,计算得到掺杂与未掺杂ZTS晶体台阶活化能的范围。同时用红外光谱实验分析了L-丙氨酸在ZTS晶体生长过程中进入晶格,进而影响台阶推移速度。     

Atomic Force Microscopy Studies on Growth Mechanisms and Defect Formations on {110} Faces of Cadmium Mercury Thiocyanate Crystals

Growth mechanisms and defect formations on {110} faces of cadmium mercury thiocyanate crystals grown at 30°C (σ=0.24) were investigated by using atomic force microscopy (AFM). It was found that, under this condition, spiral dislocation controlled mechanism and 2D nucleation mechanism operates simultaneously and equally during growth, which is completely different from the traditional 2D nucleation and dislocation source controlled mechanisms. A number of 2D nucleus are formed at the large step terraces generated by dislocation sources, leading to the unequal growth rates of the elementary steps and thereby “step bunches” arecaused. Various defects are formed under this growth condition, which is assumed to result from the incongruence between the steps generated by different sources. A new kind of 2D defect, corresponding to one growth layer in height, was observed for the first time.     

On the Presence of Faces in the Habit of Growing Crystals

Presence and size of a face in the habit are conditioned by the value of relative growth velocity R_A/R_{crit A} with respect to the critical growth velocity. It has been established that during the growth of crystals only certain values of relative growth velocities R_A/R_{crit A} occur. Faces of KBC crystals realize values of R_A/R_{crit A} between 0 and 2. Unity is the demarcation level below which appearance and above which disappearance of faces takes place. Edges and corners of crystals are places where new faces appear during changes in growth conditions.     

耐辐射优质石英晶体的生长

在水热条件下,我们利用三次再结晶的方法,生长了耐辐射优质石英晶体。随着再结晶次数的增加,晶体中的杂质浓度和缺陷浓度明显降低,晶体的耐辐射性能明显提高。     

对三联苯有机晶体的生长及性能

对三联苯是一种常见的有机闪烁剂,通常用作闪烁计数器的发光材料。对三联苯闪烁晶体具有对中子探测效率高以及不易潮解等特性,这使其在实际应用中具有广阔的前景。本文采用坩埚下降法,使用单层安瓿成功生长出φ12 mm×30 mm对三联苯晶体。在生长开始前通过差热分析,确定晶体的生长温度。生长完成后测试了晶体粉末的X射线衍射谱、摇摆曲线、红外光谱、荧光光谱和拉曼光谱。X射线衍射结果表明,生长的晶体为纯对三联苯相。从摇摆曲线结果可以看出,生长晶体质量良好。红外和拉曼分析结果显示,峰位并没有出现明显的偏移,表明晶体中杂质含量较少并未引起晶体分子化学结构的变化。荧光光谱没有杂质峰的出现也说明对三联苯晶体存在较少杂质或晶格缺陷。     

AgGaGeS_4晶体生长及性能研究

采用竖式布里奇曼法成功生长出大尺寸φ30 mm×80 mm的AgGaGeS_4单晶.X射线摇摆曲线测试结果表明该单晶结构完整.单晶元件在1.5～9.6 μm波段平均吸收系数约为0.25 cm~(-1),其中6.7～7.8 μm波段小于0.02 cm~(-1).制备的Ⅰ型相位匹配晶片元件(切角θ=43.5°, φ=0°,尺寸7 mm×7 mm×2.7 mm),在中心波长8.0305 μm基频光泵浦下,倍频输出了4.0153 μm红外激光,实验测得其实际相位匹配角为42.2°.利用波长2.05 μm、脉冲宽度20 ns的激光光源,测得其激光抗损伤阈值为270 MW/cm~2. 结合相图及温场分布对晶体生长过程中的关键问题进行了分析.     

ZnGeP2晶体的合成与生长

采用双温区法合成ZnGeP2多晶料;采用布里奇曼法生长ZnGeP2单晶,晶体尺寸为22×90 mm2.晶体透光范围0.7～12.0 μm,平均透过率达到56;;OPO光参量震荡器件尺寸6×6×15 mm3,采用2 μm的泵浦光,产生4 W以上的3.8～4.5 μm激光输出.     

Growth Kinetics and Mechanism of TGS Crystals

The growth kinetics of TGS crystals was studied at high supersaturations under the Curie temperature. The kinetics data proved that the crystal growth was mainly controlled by BCF surface diffusion model. The continuous growth was fitted to the growth rate data of (110) face. Its edge energy, Jackson factor, activity energies, kinetic coefficients were calculated.     

Vapour-liquid-solid Growth and Characterisation of N-methylurea Crystals

A new growth method, based on a vapour-liquid-solid (VLS) mechanism, is reported for preparing single crystals of N-methylurea (NMU), a material which appears to be a good alternative to urea for non-linear optical applications in the “near UV-visible” region of the spectrum. Details of the growth procedure are given and it is shown that large single crystals, with volumes up to 7 ÷ 10 cm³, can be obtained with satisfactory reproducibility and very fast growth rate. Structural and optical characterisation, still preliminary, are reported, which evidence a crystalline quality comparable to that of urea and N-methylurea as previously grown with other growth techniques. Cryst. Res. Technol., Vol. 32, No. 1.     

实际晶体的生长机制

实际晶体中的缺陷在生长过程中将减小乃至完全消除表面二维成核的势垒,成为永不消失的台阶源,对晶体生长动力学有重要影响.本文将总结本实验室在该领域中所完成的系统研究,从晶体缺陷所引起的结构变化和缺陷在表面露头处的原子组态出发,系统地讨论晶体生长的位错机制、层错机制、孪晶机制以及重入角生长和粗糙面生长的协同机制.     

水热法生长无色BSO晶体

采用不同方法制备的培养料,进行了Bi12SiO20(BSO)晶体的水热生长实验.其中以高纯三氧化二铋,二氧化硅为原料,使用铂坩埚烧制成的玻璃体为培养料,5 mol/L的NaOH溶液作为矿化剂溶液,黄金衬管作为反应场所,采用二次水热生长的方法,获得尺寸为10×10×6 mm3的无色BSO晶体.晶体的显露面主要为(001)和(110).讨论了不同方法制备的培养料对晶体呈色的影响,并测量了晶体的截至边.     

Growth of Vanadyl Pyrophosphate Single Crystals

The present work communicates about the first successful attempt at growing of sizeable single crystals of vanadyl pyrophosphate (VO)₂P₂O₇ (VOPO) — a low dimensional antiferromagnet. The growth of VOPO is complicated by two features of this compound. The first is a strong sensitivity of the oxydation state of vanadium (and stability of VOPO) to the oxygen content in the growth atmosphere. The second is a tendency of the VOPO-melt to glass formation during the cooling due to its high viscosity. Therefore the growth has to be carried out with a very low growth rate and in an atmosphere with exactly controllable oxygen content. The best results were achieved with a combination of Czochralski and Kyropoulos techniques, i.e. pulling of crystals with simultaneous cooling of the melt. Crystals of VOPO with sizes up to 10 × 5 × 3 mm³ have been grown. The growth from the melt is accompanied by growth from gaseous phase also (sublimation). Since the VOPO phase has a homogeneity range in oxygen content, attention was paid to the composition of the grown crystals. Growth experiments combined with TGA and XRD measurements show, that the oxygen content and thus the oxidation state of vanadium in the crystals can be adjusted accurately.