Determination of Nitrogen Concentration in GaP Epitaxial Layers by Two Independent Methods

The nitrogen concentration in GaP is determined by optical absorption in the A-line at T = 77 K. The concentration of the isolated nitrogen atoms is given for T = 77 K by the modified LIGHTOWLERS' relation [N_A] cm⁻³ = 8.2 · 10¹⁴ phα_max, where α is measured in cm⁻³, h in meV. p is a dimensionless line shape factor. It is shown that at higher N concentrations considering only the A-line absorption the impurity density is underestimated because the nitrogen atoms included in NN_i pairs give no contribution to the absorption. The measurements have been made in the range from [N] = 5 · 10¹⁶…︁ 10¹⁹ cm⁻³ in layers grown by vapour phase epitaxy. The results are compared with nitrogen concentrations obtained by precision lattice parameter measurements. The change of the lattice parameter is calculated using VEGARD's law. The good agreement between the nitrogen densities obtained by two different independent methods reveals (i) that the LIGHTOWLERS' calibration factor is valid also at higher N-concentrations and (ii) that the nitrogen atoms are predominantly incorporated into P-lattice sites.     

Bestimmung der OH−-Konzentration in LiNbO3-Kristallen durch Protonenresonanz-Untersuchungen

Using calibration samples it was possible to evaluate the concentration of OH⁻-ions in LiNbO₃ crystals from investigations of the nuclear magnetics resonance. The relation between the OH⁻ ion concentration and the absorption coefficient at 2,87 μm was found to be N = (3 ± 1) · 10¹⁹ k (2.87 μm) cm⁻³, which permits a quantitative determination of the OH⁻ content by simple optical absorption measurements.     

EPR-spectrum of irradiated potassium dichromate single crystals

EPR-spectra of X-irradiated potassium dichromate crystals are studied at various temperatures from RT to LNT. The most intensive lines are interpreted as due to radicals CrO₄³⁻ (A-lines) and CrO₃⁻ (C-lines), resulting from Cr₂O₇ owing to X-irradiation. Hyperfine structure of C-line, due to interaction of unpaired electron with Cr⁵³ nucleus, occurs at low temperatures, and new unobserved earlier Q-lines appear near-by C-line. The spectrum may be described by usual spin Hamiltonian for S = 1/2 with following parameters: for A-line gz = 1.9841, gy = 1.9685, gx = 1.9592; for C-line gz = 1.9148, gy = 1.9671, gx = 1.9886, |Az| = 30.53 · 10⁻⁴ cm⁻¹, |Ax| = 10.62 · 10⁻⁴ cm⁻¹, |Ay| = 6.62 · 10⁻⁴ cm⁻¹.     

Temperature dependences of the electrical conductivity and hall coefficient of indium telluride single crystals

Conductivity type, carrier concentration and carrier mobility of InTe samples grown by Bridgmann technique were determined by the Hall effect and electrical conductivity measurements. The study was performed in the temperature range 150–480 K. Two samples with different growth rate were used in the investigation. The samples under test were P-type conducting, in accordance with previous measurements of undoped material. The Hall coefficient was found to be isotropic yielding room temperature hole concentration in the range 10¹⁵ – 10¹⁶ cm⁻³. The hole mobilities of InTe samples were in the range 1.17 × 10³ – 2.06 × 10³ cm²/V · sec at room temperature. The band – gap of InTe determined from Hall coefficient studies has been obtained equal to 0.34 ev. The scattering mechanism was checked, and the electrical properties were found to be sensitive to the crystal growth rate.     

Thermally activated de-excitation of the EL2 metastable state in GaAs

Measurements of absorption in the near infrared have been performed on n-type and undoped semi-insulating GaAs containing EL2 the main native defect in GaAs. The whole band of absorption related to EL2 disappeared after 1 μm light illumination when the crystal was cooled to helium temperatures. Measurements of the thermally activated recovery of EL2 absorption have been made. The rate of the de-excitation is well described by the formula: r = 1.7 · 10¹² · exp (−0.36 eV/kT) + 1.6 · 10⁻⁹ · n · exp (−0.085 eV/kT) s⁻¹ where n [cm⁻³] is the concentration of free electrons.     

Electric Characterization of Indium Sesquiselenide Single Crystals

Conductivity, Hall-effect measurements were performed on δ-phase In₂Se₃ single crystals, grown by the Bridgman method over the temperature range 150–428 K, in the directions perpendicular and parallel to the c-axis. The anisotropy of the electrical conductivity and of the Hall coefficient of n-type In₂Se₃ had been investigated. The values of the Hall coefficient and electrical conductivity at room temperature spreads from an order of R_H11 = 1.36 × 10⁴ cm³/coul, σ₁₁ = 4.138 × 10⁻³ Ω⁻¹ cm⁻¹ and R_H = 66.55 × 10⁴ cm³/coul, σ = 0.799 × 10⁻³ Ω⁻¹ cm⁻¹ for parallel and perpendicular to c-axis, respectively. The temperature dependence of Hall mobility and carrier concentration are also studied.     

Strukturierung und Verhalten von Au?GaSb-Kontakten

The influence of the technology and the structure of interface on Au–p-GaSb and Au–n-GaSb contacts was studied and the electrical properties of contacts by four-point-method determined. Especially the influence of different annealing temperatures between 20°C and 400°C was investigated, the orientation of Czochralski-grown GaSb-crystals being (111) and the surfaces chemically polished. The doping of p-GaSb was 2–5 · 10¹⁷ cm⁻³ and of n-GaSb with Te 4–8 · ¹⁷ cm⁻³.     

Investigation of the structure of solid solutions of elements of the IV. group (Si,Ge) in gallium antimonide

Precision measurements of the lattice parameter and the density of Si- and Ge-doped GaSb monocrystals were accomplished. The investigated crystals were Czochralski-grown from an equiatomic melt (with respect to its own components) and doped with 2 · 10¹⁷ to 4 · 10¹⁹ cm^–3 Si and 2 · 10¹⁷ to 4 · 10¹⁹ cm^–3 Ge, respectively. The concentrations of the dopants were determined spectroscopically. — Hall measurements at room temperature showed that Si as well as Ge in GaSb produce p-conduction.     

Die Herstellung von einkristallinen Dünnschichten aus Halbleitern mit ausgeprägter Anisotropie durch gerichtete Kristallisation der Schmelze zwischen zwei Substraten

Investigation of monocrystalline thin layers (5 to 150 μm in thickness) of Te and CdSb orientedly grown between two substrates. The form of the solidifying front strongly influencing crystal perfection can be controlled. Thin layers grown with velocities < 0.25 cm · min⁻¹ are monocrystalline with etch pit densities of 6 · 10² cm⁻². The electrical quantities R_H, σ and α of the layers are nearly identical with those of bulk material. Doped monocrystalline CdSb layers had a minority carrier concentration of ∼ 10¹⁴ cm⁻³ at 77°K.     

Static Disorder in Hexagonal Crystal Structures of C60 at 100 K and 20 K

C₆₀ · 2C₈H₁₀ (100 K): hexagonal space group P6₃, a = 23.694(4), c = 10.046(2) Å, V = 4884(2) ų, D_x = 1.903 g cm⁻³, Z = 6, F(000) = 2856, γ(CuKa) = 1.54178 Å, μ = 0.84 mm⁻¹. C₆₀ · 2C₈H₁₀ (20 K): hexagonal space group P6₃, a = 23.67(1), c = 10.02(1) Å, V = 4862(6) ų, D_x = 1.912 g cm⁻³, Z = 6, F(000) = 2856, γ(CuKa) = 1.54178 Å, μ = 0.84 mm⁻¹. The structures were determined by Patterson syntheses and rigid-body refinements. The C₆₀ molecules show two orientations with one molecular centre in common. The solvent molecules are disordered too. Static disorder could not be overcome or influenced by cooling down. A coordination number of 10 was found for the fullerene molecules.     

Preparation and some properties of thallium orthothioarsenate single crystals

Growing of large (Ø 25–30 mm, L = 50–60 mm) optically homogenous single crystals of Tl₃AsS₄ using the Bridgman-Stockbarger method is described. Tl₃AsS₄ is orthorhombic (Pnma), a = 8.85 ± 0.03, b = 10.86 ± 0.03, c = 9.18 ± 0.03 Å; z = 4; ϱ_x = 6.15 g · cm⁻³; ϱ_p = 6.15 ± 0,03 g · cm⁻³, T_m = 424 ± 3°C, Moh's hardness = 3, microhardness and ultrasonics velocity along x, y, z are 65–85 kg · mm⁻² and 2.16 – 2.37 · 10⁵ cm · sec⁻¹, respectively. The crystals possess perfect cleavage plane (010). Their transparency range is 0.6–12 microns. – Unsuccessful attempts to obtain Tl₃AsS₄ and its alloys in the vitreous state were taken. The possibilities of glass formation and boundaries of the vitreous region in the system Tl–As–S based on the characteristic features of the melt forming structural units are analyzed.     

Diffuse X-ray scattering study of the temperature variation of elastic constants in indium arsenide

The elastic constants of indium arsenide have been determined in the temperature range from 80 to 750 K on n-type samples with a carrier concentration of about 8 · 10¹⁷ cm⁻³ by Wooster's method from the measurements of the thermal X-ray diffuse scattering intensities. An average decrease in the elastic constants with increasing temperature over the above mentioned temperature range is found to be about 8%.     

An AES/XPS study of oxygen involved reactions on InSb

The oxidation of ion-etched InSb(110)-cleavage planes was investigated by means of AES and XPS, respectively. Whereas the sticking coefficient of oxygen at indium sites was found to reach a saturation value after slight ion bombardment, the oxygen uptake rate of antimony remains low (sticking probability in the 10⁻⁷ range) with raising ion dose to a point where a drastical change in oxidation behaviour occurs at ion doses in the 10⁻² As · cm⁻² range. Then indium and antimony are nearly simultaneously oxidized with sticking coefficients of roughly 10⁻³. Cluster formation is discussed as one possible mechanism to explain the experimental findings. Adsorption experiments on disordered surfaces can contribute to a better understanding of surface reactions during gas phase growth of single crystals, since the in-growth situation of the top layer of the latter is far away from the ideal situation that is prepared by in situ cleaving only.     

Zur Realstruktur von Ga1–xInxAs LPE-Schichten

Ga_1–xIn_xAs epitaxial layers (0.02 ≦ × ≦ 0.12) are grown on (111)-oriented GaAs substrates from nonstoichiometric melts. The etch pit densities – determined by chemical etching – yield values between 2 · 10⁵ cm⁻² and 3 · 10⁷ cm⁻² and were found to be dependent on composition, layer thickness and cooling rate. X-ray topography of cleaved {110}-planes gives information on layer quality and indicates the existence of stress in the substrate lattice near the heterojunction. The validity of Vegard's law in the investigated concentration range was confirmed by X-ray determination of the lattice constants. The half width of double crystal spectrometer rocking-curves, the epd and the relative intensity of photoluminescence show similar dependence on the composition of the mixed crystal layers.     

EPR and Optical Absorption Spectra of Cr3+ Ions in Lithium Sulphate Single Crystals

Optical absorption and EPR spectra of Li₂SO₄ · H₂O crystals doped with Cr³⁺ are studied at liquid nitrogen temperature. The bands are found in absorption spectra with maxima about 17000, 23 800 and 37 200 cm⁻¹, assigned to the ⁴A₂ → ⁴T₂, ⁴A₂ → ⁴T₁ and ⁴A₂ → ⁴T₁ (⁴P) transitions, respectively. The crystal field theory parameters were determined and appeared to be as follows: Dq = 1700 cm⁻¹, B = 667 cm⁻¹, C = 3002 cm⁻¹. The lines resulting from Cr³⁺ ions are found in EPR spectra. All lines are doublets, which is indicative of presence of two magnetically unequivalent centre positions, and have the hyperfine structure resulting from interaction of the unpaired electron spin with Cr⁵³ isotope nucleus. Centres are oriented in such a way, that z-axes, corresponding to two centre positions, are situated at both sides of a-axis at an angle of about 3°. Spin Hamiltonian parameters were found as follows: g_x = 1.985, g_y = 1.984, g_z = 1.988, D = 0.130 cm⁻¹, E = 0.016 cm⁻¹, |A| = 17.8 · 10⁻⁴ cm⁻¹.     

Single Crystal Growth and Electrical Properties of Gallium Monotelluride

Single crystals of GaTe were prepared in our laboratory by a special modified Bridgman technique method. Measurements of the electrical conductivity and Hall effect between 210 and 450 K were carried out on GaTe samples in two crystallographic directions. The Hall coefficient is positive and varies with the crystallographic direction. A unique mobility behaviour and strong anistropy in the carrier mobility were observed. The Hall mobilities parallel and perpendicular to the C-axis, at room temperature, were 12 cm/V · s and 25.12 cm²/V ·s, respectively. The free carrier concentration lies between 10¹³ − 10¹⁴ cm⁻³ at room temperature.     

Positron lifetime measurements in as-grown and electron irradiated InSb

Positron lifetime in an as-grown InSb crystal is measured to be 282 ± 2 ps. Irradiation by 3 MeV electrons at 20 K to the dose 4 × 10¹⁸ e⁻/cm² increases the lifetime by 8 ps. The irradiation-induced vacancy-defects recover until 350 K with a sharper annealing stage at 250 K–350 K.     

Investigations for Sn diffusion in Pb1−xSnxTe and PbTe

By annealing Pb_1−xSn_xTe and PbTe isothermally in a quartz ampoule Sn diffused from Pb_1−xSn_xTe into PbTe. The profiles obtained have been investigated by means of an electron beam microanalyser, and the coefficients of diffusion have been determined at various temperatures. The diffusion of Sn can be explained by the expressions: D_PbSnTe = 1.5 · 10⁻¹ exp (−1.8 eV/kT) cm² s⁻¹ (0,14 < x < 0,18) D_PbTe = 5,5 · 10⁻⁴ exp (−1.5 eV/kT) cm² s⁻¹. N-type layers are observed at the surface of Pb_1−xSn_xTe specimens.     

Semiconducting Properties of TI2Te3 Single Crystals

Electrical conductivity and Hall effect measurements were performed on single crystals of TI₂Te₃ to have the general semiconducting behaviour of this compound. The measurements were done at the temperature range 160–350 K. All crystals were found to be of p-type conductivity. The values of the Hall coefficient and the electrical conductivity at room temperature were 1.59 × 10³ cm³/coul and 3.2 × 10⁻² ω⁻¹ cm⁻¹, respectively. The hole concentration at the same temperature was driven as 39.31 × 10¹¹ cm⁻³. The energy gap was found to be 0.7 eV where the depth of impurity centers was 0.45 eV. The temperature dependence of the mobility is discussed.     

Liquid-Phase Epitaxy of (Hg,Cd)Te on CdTe Substrates by a Vertical Dipping Technique

Hg_1−xCd_xTe layers on CdTe substrates were grown from Te-rich melt solutions by a vertical dipping technique using a special quasi-closed system with ground-glass sealing. Results are good reproducibilities of the electrical properties after annealing in Hg-rich atmosphere (p77 ≈ 2 · 10¹⁶ cm⁻³ μ77 ≈ 500 cm² V⁻¹ s⁻¹) and of the x-value, respectively. A horizontal position of the substrate downwards to the melt solution yields, in difference to a vertical one, to homogeneous layer thicknesses. Short meltback steps before growth leads to sharper profiles of composition.