Propagation characteristics of laser-induced stress wave in deep tissue for gene transfer

Propagation characteristics of laser-induced stress waves (LISWs) in tissue and their correlation with properties of gene transfection were investigated for targeted deep-tissue gene therapy. LISWs were generated by irradiating a laser-absorbing material with 532-nm Q-switched Nd:YAG laser pulses; a transparent plastic sheet was attached on the absorbing material for plasma confinement. Temporal pressure profiles of LISWs that were propagated through different thickness tissues were measured with a needle-type hydrophone and propagation of LISWs in water was visualized by shadowgraph technique. The measurements showed that at a laser fluence of 1.2 J/cm² with a laser spot diameter of 3 mm, flat wavefront was maintained for up to 5 mm in depth and peak pressure P decreased with increasing tissue thickness d; P was proportional to d^−0.54. Rat dorsal skin was injected with plasmid DNA coding for reporter gene, on which different numbers of excised skin(s) was/were placed, and LISWs were applied from the top of the skins. Efficient gene expression was observed in the skin under the 3 mm thick stacked skins, suggesting that deep-located tissue such as muscle can be transfected by transcutaneous application of LISWs.     

Single crystal EPR and optical absorption study of Cr doped l-histidine hydrochloride monohydrate

EPR study of the Cr³⁺ ion doped l-histidine hydrochloride monohydrate single crystal is done at room temperature. Two magnetically inequivalent interstitial sites are observed. The hyperfine structure for Cr⁵³ isotope is also obtained. The zero field and spin Hamiltonian parameters are evaluated from the resonance lines obtained at different angular rotations and the parameters are: D=(300±2)×10⁻⁴ cm⁻¹, E=(96±2)×10⁻⁴ cm⁻¹, g_x=1.9108±0.0002, g_y=1.9791±0.0002, g_z=2.0389±0.0002, A_x=(252±2)×10⁻⁴ cm⁻¹, A_y=(254±2)×10⁻⁴ cm⁻¹, A_z=(304±2)×10⁻⁴ cm⁻¹ for site I and D=(300±2)×10⁻⁴ cm⁻¹, E=(96±2)×10⁻⁴ cm⁻¹, g_x=1.8543±0.0002, g_y=1.9897±0.0002, g_z=2.0793±0.0002, A_x=(251±2)×10⁻⁴ cm⁻¹, A_y=(257±2)×10⁻⁴ cm⁻¹, A_z=(309±2)×10⁻⁴ cm⁻¹ for site II, respectively. The optical absorption studies of single crystals are also carried out at room temperature in the wavelength range 195-925 nm. Using EPR and optical data, different bonding parameters are calculated and the nature of bonding in the crystal is discussed. The values of Racah parameters (B and C), crystal field parameter (Dq) and nephelauxetic parameters (h and k) are: B=636, C=3123, Dq=2039 cm⁻¹, h=1.46 and k=0.21, respectively.     

Evaluation of aortic stenosis severity using 4D flow jet shear layer detection for the measurement of valve effective orifice area

Aims

The objective of this study was to evaluate the potential of 4D flow MRI to assess valve effective orifice area (EOA) in patients with aortic stenosis as determined by the jet shear layer detection (JSLD) method.

Methods and Results

An in-vitro stenosis phantom was used for validation and in-vivo imaging was performed in 10 healthy controls and 40 patients with aortic stenosis. EOA was calculated by the JSLD method using standard 2D phase contrast MRI (PC-MRI) and 4D flow MRI measurements (EOA_JSLD-2D and EOA_JSLD-4D, respectively). As a reference standard, the continuity equation was used to calculate EOA (EOA_CE) with the 2D PC-MRI velocity field and compared to the EOA_JSLD measurements. The in-vitro results exhibited excellent agreement between flow theory (EOA = 0.78 cm²) and experimental measurement (EOA_JSLD-4D = 0.78 ± 0.01 cm²) for peak velocities ranging from 0.9 to 3.7 m/s. In-vivo results showed good correlation and agreement between EOA_JSLD-2D and EOA_CE (r = 0.91, p < 0.001; bias: − 0.01 ± 0.38 cm²; agreement limits: 0.75 to − 0.77 cm²), and between EOA_JSLD-4D and EOA_CE (r = 0.95, p < 0.001; bias: − 0.09 ± 0.26 cm²; limits: 0.43 to − 0.62 cm²).

Conclusion

This study demonstrates the feasibility of measuring EOA_JSLD using 4D flow MRI. The technique allows for optimization of the EOA measurement position by visualizing the 3D vena contracta, and avoids potential sources of EOA_CE measurement variability.     

Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(1 1 1)

GaN have sphalerite structure (Cubic-GaN) and wurtzite structure (hexagonal GaN). We report the H-GaN epilayer with a LT-AlN buffer layer has been grown on Si(1 1 1) substrate by metal-organic chemical vapor deposition (MOCVD). According to the FWHM values of 0.166° and 14.01 cm⁻¹ of HDXRD curve and E₂ (high) phonon of Raman spectrum respectively, we found that the crystal quality is perfect. And based on the XRD spectrum, the crystal lattice constants of Si (a = 5.3354 ?) and H-GaN (a_epi = 3.214 ?, c_epi = 5.119 ?) have been calculated for researching the tetragonal distortion of the sample. These results indicate that the GaN epilayer is in tensile strain and Si substrate is in compressive strain which were good agreement with the analysis of Raman peaks shift. Comparing with typical values of screw-type (D_screw = 7 × 10⁸ cm⁻²) and edge-type (D_edge = 2.9 × 10⁹ cm⁻²) dislocation density, which is larger than that in GaN epilayers growth on SiC or sapphire substrates. But our finding is important for the understanding and application of nitride semiconductors.     

An atomic force microscopy study of DNA hairpin probes monolabelled with gold nanoparticle: Grafting and hybridization on oxide thin films

First and original results are reported regarding the surface evolution of two kinds of oxide film after covalent grafting and hybridization of hairpin oligonucleotide probes. These hairpin probes were monolabelled with a 1.4 nm gold nanoparticle. One kind of oxide film was rough Sb doped SnO₂ oxide film and the other kind was smooth SiO₂ film. Same process of covalent grafting, involving a silanization step, was performed on both oxide surfaces. Atomic force microscopy (AFM) was used to study the evolution of each oxide surface after different steps of the process: functionalization, probe grafting and hybridization. In the case of rough SnO₂ films, a slight decrease of the roughness was observed after each step whereas in the case of smooth SiO₂ films, a maximum of roughness was obtained after probe grafting. Step height measurements of grafted probes could be performed on SiO₂ leading to an apparent thickness of around 3.7 ± 1.0 nm. After hybridization, on the granular surface of SnO₂, by coupling AFM with SEM FEG analyses, dispersed and well-resolved groups of gold nanoparticles linked to DNA duplexes could be observed. Their density varied from 6.6 ± 0.3 × 10¹⁰ to 2.3 ± 0.3 × 10¹¹ dots cm⁻². On the contrary, on smooth SiO₂ surface, the DNA duplexes behave like a dense carpet of globular structures with a density of 2.9 ± 0.5 × 10¹¹ globular structures cm⁻².     

Influence of zinc ion implantation on surface nanomechanical performance and corrosion resistance of biomedical magnesium-calcium alloys

It is believed that magnesium and its alloys may find applications in biomedical fields as implants, bone fixation devices, and tissue engineering scaffolds. However, their corrosion rate must be controlled. In this study, biomedical magnesium-calcium (Mg-Ca) alloys were ion-implanted with zinc. The surface nanomechanical performance and corrosion behavior of the ion-implanted Mg-Ca alloys are determined. The results show that zinc ion implantation at a dose of 0.9 × 10¹⁷ ions/cm² significantly improves the surface hardness and modulus. However, the results on corrosion resistance reveal that zinc ion implantation degrades the corrosion behavior of Mg-Ca alloys. Thus, zinc is not a favorable element for the ion implantation treatment of biomedical Mg-Ca alloys.     

Temperature-dependent optical absorption measurements and Schottky contact behavior in layered semiconductor n-type InSe(:Sn)

The layered n-InSe(:Sn) single crystal samples have been cleaved from a large crystal ingot grown from non-stoichiometric melt by the Bridgman-Stockbarger method. It has been made the absorption measurements of these samples without Schottky contact under electric fields of 0.0 and 6000 V cm⁻¹. The band gap energy value of the InSe:Sn has been calculated as 1.36 ± 0.01 eV (at 10 K) and 1.28 ± 0.01 eV (at 300 K) under zero electrical field, and 1.31 ± 0.01 eV (at 10 K) and 1.26 ± 0.01 eV (at 300 K) under 6000 Vcm⁻¹. The current-voltage (I-V) characteristics of Au-Ge/InSe(:Sn)/In Schottky diodes have been measured in the temperature range 80-320 K with a temperature step of 20 K. An experimental barrier height (BH) Φ_ap value of about 0.70 ± 0.01 eV was obtained for the Au-Ge/InSe(:Sn)/In Schottky diode at the room temperature (300 K). An abnormal decrease in the experimental BH Φ_b and an increase in the ideality factor n with a decrease in temperature have been explained by the barrier inhomogeneities at the metal-semiconductor interface. From the temperature-dependent I-V characteristics of the Au-Ge/InSe(:Sn)/In contact, that is, and A^* as 0.94 ± 0.02 and 0.58 ± 0.02 eV, and 27 ± 2 and 21 ± 1 (A/cm² K²), respectively, have been calculated from a modified versus 1/T plot for the two temperature regions. The Richardson constant values are about two times larger than the known value of 14.4 (A/cm² K²) known for n-type InSe. Moreover, in the temperature range 80-320 K, we have also discussed whether or not the current through the junction has been connected with TFE.     

Lasing at 1065 nm in bulk Nd-doped telluride-tungstate glass

We have achieved, for the first time to our knowledge, lasing in a new type of telluride-tungstate glass host doped with neodymium: Nd³⁺:(0.8)TeO₂-(0.2)WO₃. Lasing was obtained at 1065 nm with two samples containing 0.5 mol% and 1.0 mol% Nd₂O₃. During gain-switched operation, slope efficiencies of 12% and 10% were obtained with the 0.5 mol% and 1.0 mol% doped samples, respectively, at a pulse repetition rate of 1 kHz. Judd-Ofelt analysis was further employed to determine the emission cross section σ_e at 1065 nm from the absorption spectra and lifetime data. The emission cross section from the Judd-Ofelt analysis came to 3.23 ± 0.09 × 10⁻²⁰ cm², in reasonable agreement with the value of 2.0 ± 0.13 × 10⁻²⁰ cm² obtained from the analysis of laser threshold data.     

Excitation relaxation and structure of TPPS4 J-aggregates

The energy relaxation kinetics and the structure of the J-aggregates of water-soluble porphyrin 5,10,15,20-tetrasulphonatophenyl porphine (TPPS₄) were investigated in aqueous medium by means of time-resolved fluorescence spectroscopy and confocal laser-scanning fluorescence microscopy. The excitation of the J-aggregates, at excitation intensities higher than ∼10¹⁵ photons/cm² per pulse, results in a remarkable decrease of the fluorescence quantum yield and in the appearance of an additional, non-exponential energy relaxation channel with a decay constant that depends on the excitation intensity. This relaxation mechanism was attributed to the exciton single-singlet annihilation. The exciton lifetime in the absence of the annihilation was calculated to be ∼150 ps. Using exciton annihilation theory, the exciton migration within the J-aggregates could be characterized by determining the exciton diffusion constant (1.8±0.9)  10⁻³ cm²/s and the hopping time (1.2±0.6) ps. Using the experimental data, the size of the J-aggregate could be evaluated and was seen to yield at least 20 TPPS₄ molecules per aggregate. It was shown by means of confocal fluorescence laser scanning microscopy that TPPS₄ does self-associate in polyvinyl alcohol (PVA) at acidic pH forming molecular macro-assemblies on a scale of ∼1 μm in PVA matrices.     

The conductance and capacitance-frequency characteristics of Au/pyronine-B/p-type Si/Al contacts

The rectifying junction characteristics of the organic compound pyronine-B (PYR-B) film on a p-type Si substrate have been studied. The PYR-B has been evaporated onto the top of p-Si surface. The barrier height and ideality factor values of 0.67 ± 0.02 eV and 2.02 ± 0.03 for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. The energy distribution of the interface states and their relaxation time have been determined from the forward bias capacitance-frequency and conductance-frequency characteristics in the energy range of ((0.42 ± 0.02) − E_v)-((0.66 ± 0.02) − E_v) eV. The interface state density values ranges from (4.21 ± 0.14) × 10¹³ to (3.82 ± 0.24) × 10¹³ cm⁻² eV⁻¹. Furthermore, the relaxation time ranges from (1.65 ± 0.23) × 10⁻⁵ to (8.12 ± 0.21) × 10⁻⁴ s and shows an exponential rise with bias from the top of the valance band towards the midgap.     

Adhesion and endothelialization of endothelial cells on the surface of endovascular stents by the novel rotational culture of cells

Recent researches indicate that the initial event in the implantation of endovascular stents involves mechanical injury to the vessel wall. Confluent endothelialization of vascular grafts in vitro before implantation has been suggested as a way to reduce injury of the blood vessel. The purpose of this study is to establish a useful way to improve the adhesion of endothelial cells and accelerate endothelialization on the surface of endovascular stents by a novel rotational culture device. Numerical simulation was used to predict the shear stress on the surface of stents. The number of cellular adhesion was calculated by cell counting, the cell growth was observed by scanning electron microscope and fluorescence microscope. Numerical simulation results showed that the stents was exposed to shear stress of 2.66 × 10⁻³ to 8.88 × 10⁻² Pa. Rotational culture of human umbilical vein endothelial cells could enhance the adhesion of cells and accelerate endothelialization on the surface of stents when the culture conditions for EC adhesion were intermediate rotation speed, higher dynamic incubation times, lower cell densities.     

Baking impact on photoelectrochemical cells performance of electrodeposited CdSe films

Cadmium selenide (CdSe) nanocrystalline thin films in the form of upright nanocones, perpendicular to substrate surface, are grown electrochemically onto a conducting and transparent indium-tin-oxide substrate at room temperature and impact of baking under oxygen flow on their structure, morphology, optical absorbance and dark-light photoelectrochemical cell performance is explored. Crystallinity improvement followed by enhancement in the surface roughness 11-19 nm and reduction in water contact angle from 60° to 22° (±0.2)° due to baking impact showed increase in crystallite size from 25 to 100 Å. Increase in current density from 0.07 to 5.61 mA/cm² after baking under oxygen flow has promoted the conversion efficiency to 0.5% from 0.007%.     

Ablation process of silica glass induced by laser plasma soft X-ray irradiation

Silica glass can be machined by irradiation with laser plasma soft X-rays on nano- and micrometer scale. We have investigated the ablation process of silica glass induced by laser plasma soft X-ray irradiation. We observed ionic and neutral species emitted from silica surfaces after irradiation. Dominant ions and neutrals are O⁺ and Si⁺ ions and Si, O, SiO and Si₂ neutrals, respectively. The ions have kinetic energies of 13 and 25 eV, which are much higher than those of particles emitted by evaporation. The energy of laser plasma soft X-rays absorbed to silica glass at a fluence of 1.4 J/cm² is estimated to be 380 kJ/cm³, which is higher than the binding energy of SiO₂ of 76 kJ/cm³. These results suggest that the most of the bonds in silica glass are broken by absorption of laser plasma soft X-rays, that several percent of the atoms are ionized, and that neutral atoms are emitted together with repulsive ions. The process possibly enables us to fabricate nano structures.     

Ordered nano-scale domains in lithium niobate single crystals via phase-mask assisted all-optical poling

We report the formation of directionally ordered nano-scale surface domains on the +z face of undoped congruent lithium niobate single crystals by using UV illumination through a phase mask of sub-micron periodicity with an energy fluence between ∼90 mJ/cm² and 150 mJ/cm² at λ = 266 nm. We clearly show here that the UV-induced surface ferroelectric domains only nucleate at and propagate along maxima of laser intensity. Although the domain line separation varies and is greater than 2 μm for this set of experimental conditions, this enables a degree of control over the all-optical poling process.     

InSb quantum dots and quantum rings on InAs-rich surface

We report a study of InSb nanoobjects (quantum dots and quantum rings) grown on InAs-rich surface by liquid phase epitaxy. Characterization of the sample surface was performed using atomic force microscopy (AFM). The bimodal formation of the uncapped InSb quantum dots (QDs) was observed for the growing on a binary InAs substrate. Uniform high-density (1 × 10¹⁰ cm⁻²) quantum dots with a height of 3 nm were obtained at T = 420-430 °C, whereas low-density (5 × 10⁸ cm⁻²) big quantum dots were 9 nm in height. As a buffer layer, lattice-matched InAsSb_0.12P_0.25 solid solution was deposed on InAs substrate using metal-organic vapour phase epitaxy. Deposition from the InSb melt on the buffer layer resulted in the formation of InSb nanoobjects with density as high as 3 × 10¹⁰ cm⁻².     

Spectroscopic investigation of Tm:TeO2-WO3 glass

We studied the spectroscopic characteristics of telluride glass with the host composition (0.85)TeO₂-(0.15)WO₃, containing 0.25 and 1.0 mol% thulium oxide (Tm₂O₃). By analyzing the absorption spectra with the Judd-Ofelt theory, the average radiative lifetimes of 305±7.5 μs and 1.95±0.02 ms were determined for the ³F₄ and ³H₄ levels, respectively. Measured fluorescence lifetime of the ³F₄ level decreased from 218 to 51 μs for the 0.25 and 1.0 mol% Tm₂O₃ doped samples, respectively, indicating the effect of boosted non-radiative decay at higher doping concentrations. A similar trend was observed for the ³H₄ level, where the fluorescence lifetime decreased from 1.86 ms to 350 μs at these concentrations. The quenching of the 1460 nm (³F₄→³H₄) emission in favor of the 1800 nm (³H₄→³H₆) emission due to cross relaxation was further evident in the fluorescence spectra of the samples. The calculated stimulated emission cross sections (3.73±0.1×10⁻²¹ cm² at 1460 nm and 6.57±0.07×10⁻²¹ cm² at 1808 nm) reveal the potential importance of the Tm³⁺:(0.85)TeO₂-(0.15)WO₃ glass for applications in fiber-optic amplifiers and fiber lasers.     

Enhanced cell affinity of poly(l-lactide) film by immobilizing phosphonized chitosan

Graft polymerization of acrylic acid (AA) onto poly(l-lactide) (PLLA) film by UV irradiation was carried out to develop surfaces for N-methylene phosphonic chitosan (NMPC) immobilization. The properties of modified films were discussed by colorimetric method, attenuated total reflection-Fourier transform infrared spectroscopy (ATR-FTIR), contact angles, atomic force microscopy (AFM) and osteoblast incubation. The results showed that AA solution concentration and irradiation time had effect on the graft carboxyl densities. Comparing the ATR-FTIR images, two new peaks at 1561 cm⁻¹ and 1632 cm⁻¹ proved that NMPC was immobilized on the film surface successfully. The water contact-angles were decreased from 90 ± 5° to 37 ± 5° after modification. The AFM images indicated that the surface of the combined film was rougher than that of untreated film. The grafted film provided an excellent substrate for the growth of osteoblast.     

The use of bioluminescence as a flow diagnostic

The flash response of luminescent plankton is studied in laminar and turbulent pipe flow. Maximum intensity levels of individual plankton are nearly constant for wall shear stress values exceeding approximately 10 dyn cm⁻² - regardless of the nature of the flow. This result necessitates a reevaluation of previous inferences made about the stimulating flow field.     

Intercalation of lithium ions into bulk and powder highly oriented pyrolytic graphite

The electrochemical reactions of highly oriented pyrolytic graphite (HOPG) bulk and powder electrodes in 1 M LiPF₆ 1:1 EC/DMC solution were investigated and the results show that the intercalation reaction of lithium ion into HOPG electrode occurs only at the edge plane and SEI formation reaction on the basal plane is negligible in comparison with that on the edge plane. The active surface area of HOPG powder electrode could be deduced by comparing the peak area (consumed charge for SEI formation) at potential of 0.5 V on voltammograms with that of bulk HOPG edge electrode. The diffusion coefficients of lithium ion in HOPG bulk layers and in HOPG powder was for the first time measured by use of electrochemical impedance spectra and potential step chronamperameter methods. It was found that the diffusion coefficients of lithium in HOPG were in the range of 10⁻¹¹-10⁻¹² cm² s⁻¹ for the lithium-HOPG intercalation compounds at potentials from 0.2 (vs. Li/Li⁺) to 0.02 V, decreasing with the increase of lithium intercalation degree. A good agreement was obtained between the results from bulk and powder HOPG electrodes by electrochemical impedance spectra method.     

Raman spectroscopy of SWNTs produced by a XeCl excimer laser ablation at high temperatures

Synthesis of single-wall carbon nanotubes (SWNTs) was carried out by an ablation method using a XeCl excimer laser. It was irradiated onto a graphite target containing Co and Ni at the temperatures of 1073, 1173, 1273, 1373, 1473, 1523 and 1623 K under the atmosphere (0.1 MPa) of Ar gas with the flow rate of 12 ml/min. The measurement by a scanning/transmission electron microscope and Raman spectroscopy found the formation of SWNTs with the diameter of about 1.3 nm and the length of about 2 μm in ablated carbonaceous soot. The ratio of peak intensity of 1590 cm⁻¹ (G band) to that of 1335 cm⁻¹ (D band) in the high frequency Raman spectra increased with increasing the ambient temperature. The radial breathing mode (RBM) in the low frequency Raman spectra shows that the mean diameter of SWNTs increased with increasing the ambient temperature.