Evolution of Structural Defects in SiOx Films Fabricated by Electron Cyclotron Resonance Plasma Chemical Vapour Deposition upon Annealing Treatment

We study the structural defects in the SiO, film prepared by electron cyclotron resonance plasma chemical vapour deposition and annealing recovery evolution. The photoluminescence property is observed in the as-deposited and annealed samples. [-SiO3]^2- defects are the luminescence centres of the ultraviolet photoluminescence （PL） from the Fourier transform infrared spectroscopy and PL measurements. [-SiO3]^2- is observed by positron annihilation spectroscopy, and this defect can make the S parameters increase. After 1000℃ annealing, [-SiO3]^2- defects still exist in the films.     

Anisotropy of the electron momentum distribution in Bi2Sr2CaCu2O8+δ superconductor studied by positron annihilation

The temperature dependent (30-300 K) Doppler broadening of the positron annihilated γ-radiation measurement has been investigated on single crystalline Bi₂Sr₂CaCu₂O_8+δ (Bi-2212) high T_c superconducting samples along two different crystallographic orientations. It has been observed that throughout the temperature range the electron momentum distribution has a larger value along the crystallographic c-axis than in the a-b plane. The temperature dependent Doppler broadened positron annihilation γ-radiation lineshape analysis shows a step like increase of S-parameter at the temperature region 92-116 K.     

Defect study on electron irradiated GaAs by means of positron annihilation

Measurements of the positron lifetime and Doppler-broadened annihilation-radiation have been performed in electron-irradiated GaAs. The positron lifetime at the irradiation induced defects was 0.250 ns at 300 K. The defect clustering stage was found to occur at around 520–620 K, and the coarsening and annealing stage is believed to be above 620 K. Similar annealing stages were also observed in GaAs lightly doped with Si (0.2×10¹⁸ cm^–3). Both the lifetime and the S-parameter in the irradiated GaAs were found to decrease with temperature from 300 K to 100 K, suggesting the coexistence of shallow traps in electron irradiated GaAs.     

Analysis of semi-insulating GaAs and the role of positron annihilation

The uses of Positron Annihilation (PA) techniques for the analysis of native defects in bulk GaAs are reported. PA has allowed the structure of the metastable state of the important EL2 defect to be examined and has demonstrated that a vacancy is present in the complex. PA has also provided strong evidence that the centre responsible for minority-carrier lifetime degradation in this material is the arsenic vacancy.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Positron annihilation lifetime studies on La0.5Pb0.5Mn1−yCryO3

Concentration dependent positron annihilation lifetime (PAL) measurements on Cr doped La_0.5Pb_0.5Mn_1−yCr_yO₃ (y=0.075, 0.15, 0.3, 0.35, 0.45) samples showing metal-insulator transitions (MIT) between 178 and 276 K (depending on y) reveal anomalous variation of average and bulk PAL, τ_av and τ_B, respectively, around y=0.35. Such anomaly has not, however, been observed from the corresponding magnetic susceptibility and resistivity data. Interestingly, the model parameters (polaron radius, number of ion sites per unit volume) obtained from fitting the high temperature (above MIT, T_p) resistivity data with small polaron hopping model show the signature of the said anomaly around the same concentration. Nonlinear variations of τ_av and τ_B support the existence of small polarons (T>T_p) which act as defect centers in such rare-earth manganites. Analysis of X-ray diffraction pattern confirms a change of lattice parameters indicating a structural transformation from rhombohedral (for y≤0.30) to orthorhombic (for y≥0.35) in the present system.     

On the sensitivity limit of positron annihilation: detection of vacancies in as-grown silicon

14 cm^-3 in FZ-Si was obtained. Received: 2 June 1998 / Accepted: 20 November 1998 / Published online: 24 February 1999     

Defect structure and dielectric properties of Bi-based pyrochlores probed by positron annihilation

Positron annihilation lifetime (PAL) and Doppler broadening (DB) techniques have been performed to identify structural defects of the bismuth based pyrochlore systems with generic formula (Bi_1.5Zn_0.5)(Zn_0.5−x/3Ti_xNb_1.5−2x/3)O₇ (x = 0, 0.25, 0.5,1.0, 1.5). We found that all studied compounds contain substantial amount of the lattice vacancy defects, the variation of the annihilation lifetime suggests that the defects structure undergoes significant changes. The complex defects could be produced with increasing content of Ti, resulting in a drop in the intensity I₂ in the Ti-rich sample. At 1 MHz their dielectric constant (?′) varies from 150 for Ti-poor system to 210 for Ti-rich system and loss tangent (tan δ) remains rather low level. The high dielectric constant response of the BZTN ceramics is attributed to loosening state of cations located in the center of octahedral, so favor off-center displacement. The occurrence of complex defects help to enhance the dielectric constant.     

A study of defects in deformed FeSi alloys using positron annihilation techniques

Steels with high amounts of silicon are used in electrical applications due to their low magnetostriction, high electrical resistivity and reduced energy losses, but they exhibit poor formability. The slow positron beam of Gent is used to investigate defects in different deformed FeSi alloys. It was found that the concentration of defects for the alloys deformed at high temperatures are different from the ones related to the alloys deformed at room temperature. These results are correlated to the results of positron annihilation lifetime spectroscopy (PALS).     

Defects in Si-Rich SiO2 Films Prepared by Radio-Frequency Magnetron Co-sputtering Using Variable Energy Positron Annihilation Spectroscopy

Si-rich SiO2 films prepared by rf magnetron co-sputtering method are studied by slow positron beams. The nega- tively charge point defects （probably Pb centres or peroxy radicals） at the silicon nanocluster （nc-Si）/SiO2 interface are observed by Doppler broadening spectra. Coincidence Doppler-broadening spectra show that positrons have a higher annihilation probability with core electrons nearby oxygen atoms than silicon atoms. The formation of N-related bonds may be the reason for the prevention of the migration reaction of Si and 0 atoms, hence nc-Si formation is inhibited by annealing in nitrogen compared to in vacuum.     

Solution-combustion synthesis of Tb-doped Y3Al5O12 nanoparticles

Nano-sized YAG:Tb powder phosphors were prepared by a solution-combustion method, using the general inorganic salts as starting materials. The X-ray diffraction (XRD) measurements showed that the precursor can be well-crystallized at 900 °C. As-prepared particles have sizes mostly in the range between 30 and 100 nm as obtained by scanning electron microscope (SEM) and transition electron microscope (TEM). Selected area electron diffraction (SAED) patterns proved that the larger particles are monocrystalline. The effects of annealing temperature and Tb-doping concentration on the luminescence intensity were studied.     

Slow positron annihilation studies of vacancy-type defects in the near-surface region of Cu and Nb before and after wear

Received: 22 June 1998 / Accepted: 9 November 1998     

Application of positron annihilation spectroscopy on the ion implantation damaged Fe-Cr alloys

Four different Fe-Cr binary alloys with Cr content 2.5-11 wt% were studied in details using various methods. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) were applied to obtain basic information, required for standard positron annihilation lifetime spectroscopy (PALS) spectra analysis. Additionally, PALS measurements were performed on as-received state as well as on helium implanted specimens. The He implantation was proposed for simulation of radiation damage and obtain high doses even in near surface areas (up to 1 μm). The implantation was based on the SRIM code simulation and next DPA calculations. Final concentration of vacancy type defects were calculated for 250 keV He²⁺ beam and the maximum was determined in 600 μm depth. Such specimens are very suitable for positron beam study of vacancy type defect mobility as a result of thermal treatment, which will be performed simultaneously in the future.     

Interfacial Reactions and Cubic Neodymium Oxide Formation in Low Dispersed Nd2O3-SiO2 System by Wet Chemical Method

Neodymium (binary oxide) powders are synthesized by a solgel technique. Prepared powders are heat treated under different temperature for different time duration and obtained nanostructure of Nd. Metal particle have diameters in the range 7.8-21.6nm. It is found that the heat treatment plays an important role to produce different structure of Nd-doped silica matrix. The peak position shifts to lower angle as the size of the nano metal oxide particles size increases.     

Positron annihilation spectroscopy and specific heat study of Neon ion irradiated MgB2

Specific heat studies under magnetic field and positron annihilation spectroscopy were carried out on 160 MeV Ne ion irradiated polycrystalline MgB₂ samples. There is an unusual decrease in positron lifetime in the irradiated sample which may be due to neon ion implantation. This was also indicated by change in cell volume. Coincidence Doppler Broadening Spectra of Mg, B, irradiated and unirradiated MgB₂ show that positrons primarily annihilate in boron sublattice in the unirradiated sample whereas there is some similarity of the spectrum of the irradiated sample with that of Mg. There is Mg deficiency in the unirradiated sample whereas predominantly boron vacancies exist in Ne ion irradiated MgB₂ sample. Specific heat measurements show that there is a small increase in electronic part of the specific heat and electron-phonon coupling constant.     

Determination of positron beam parameters by various diagnostic techniques

Various diagnostic techniques have been applied at the neutron-induced positron source Munich NEPOMUC in order to determine the positron beam parameters such as intensity, beam shape and energy distribution. The positron beam intensity is determined by the detection of the annihilation radiation of positrons, which annihilate in a movable target. The use of a micro-channel plate (MCP) detector with a CCD-camera allows a direct measurement of the positron beam shape and the lateral resolved intensity distribution. At NEPOMUC a movable MCP-assembly inside the evacuated beam line enables a quick examination of the beam shape during operation. A retarding grid was mounted inside the homogeneous magnetic guiding field in order to determine the distribution of the longitudinal positron momentum, and hence estimate the energy distribution of the positrons.     

Formation of V2O3 nanocrystals by thermal reduction of V2O5 thin films

We report the formation of homogeneous and stable V₂O₃ nanocrystals, directly from V₂O₅ thin films, at 600 °C, as observed by using in situ electron microscopy experiments. Thermally-induced reduction of V₂O₅ thin films in vacuum is remarkably different when compared to reduction of V₂O₅ single crystals and results in the formation of nanophase V₂O₃. Thermally grown V₂O₃ nanocrystals exhibit hexagon or square shape and are stable at higher temperature as well as room temperature. The formation of stable nanocrystals through the reduction process in a non-chemical environment (vacuum) could provide a basis for understanding the complex processes of vanadium oxide phase transitions and for controlling the chemical processes to produce oxide nanocrystals.     

Time bunching of slow positrons for annihilation lifetime and pulsed laser photon absorption experiments

Methods are described for gathering positrons from an extended region and causing them to impact upon a target surface within a small time interval. The most optimistic of these proposed schemes suggests that one should be able to produce ∼10⁻⁹s positron pulses with peak intensities of ∼10¹¹s⁻¹ starting with a ∼200 m Ci⁵⁸Co β⁺ source. These pulses should be useful for studying time-dependent interactions of positrons at surfaces.     

Performance of the Beijing pulsed variable-energy positron beam

In order to study the depth-dependent characteristics of open-volume defects in thin surface layers, the variable-energy positron lifetime spectroscopy (VEPLS) has been enabled by pulsing a continuous positron beam. The buncher is a quarter-wave coaxial resonator and the RF-signal is fed in by a coupling loop with a frequency of 149.89 MHz and the reflection factor of 0.05 measured by a Network Analyzer. Three synchronic signals with their phases and amplitudes adjusted independently are supplied for start signal of the positron lifetime measurement and the power signal by an electronic system. The stop signal is derived from a detector, a BaF₂ scintillator coupled to a photomultiplier-tube (Hamamatsu). The time resolution of 295 ps (FWHM) was achieved for a Kapton film and a Ti sample at positron energies in the range between 1 keV and 30 keV.     

Study of the surface contamination of copper with the improved positron annihilation-induced Auger electron spectrometer at NEPOMUC

The high intensity positron source NEPOMUC at the FRM-II in Munich enables measurement times for positron annihilation-induced Auger electron spectroscopy (PAES) of only 2.4 h/spectrum, in contrast to usual lab beams with measurement times up to several days. The high electron background due to surrounding experiments in the experimental hall of the FRM-II has been eliminated and hence background free experiments have become possible. Due to this, the signal to noise ratio has been enhanced to 4.5:1, compared to 1:3 with EAES. In addition, a long-term measurement has been performed in order to observe the contamination of a polycrystalline copper foil at 150 °C.     

Analysis of positron diffusion data

In this paper we present and discuss experimental methods to determine the positron diffusion coefficient from slow positron beam measurements. We also evaluate the use of the annihilation line Doppler-broadening technique in positron diffusion measurements, as compared on the more commonly used method of positronium fraction. The effects of incomplete positron thermalization and uncertainties of the positron implantation profile at low-positron incident energies to the measured data are discussed. We apply the presented methods to the model case of A1(110) system in the temperature range from 20 to 500 K. This data shows that Doppler-broadening and positronium fraction measurements give consistent results for the positron diffusion coefficient in A1(110), where D₊(300 K) = 1.7(2) cm²/s with the temperature dependence D₊ T ^–0.62(3).