Oxidation of Pt(1 0 0)-hex-R0.7° by gas-phase oxygen atoms

We utilized temperature programmed desorption (TPD), X-ray photoelectron spectroscopy (XPS), electron energy loss spectroscopy (ELS), and low energy electron diffraction (LEED) to investigate the oxidation of Pt(1 0 0)-hex-R0.7° at 450 K. Using an oxygen atom beam, we generated atomic oxygen coverages as high as 3.6 ML (monolayers) on Pt(1 0 0) in ultrahigh vacuum (UHV), almost 6 times the maximum coverage obtainable by dissociatively adsorbing O₂. The results show that oxidation occurs through the development of several chemisorbed phases prior to oxide growth above about 1 ML. A weakly bound oxygen state that populates as the coverage increases from approximately 0.50 ML to 1 ML appears to serve as a necessary precursor to Pt oxide growth. We find that increasing the coverage above about 1 ML causes Pt oxide particle growth and significant surface disordering. Decomposition of the Pt oxide particles produces explosive O₂ desorption characterized by a shift of the primary TPD feature to higher temperatures and a dramatic increase in the maximum desorption rate with increasing coverage. Based on thermodynamic considerations, we show that the thermal stability of the surface Pt oxide on Pt single crystal surfaces significantly exceeds that of bulk PtO₂. Furthermore, we attribute the high stability and the acceleratory decomposition rates of the surface oxide to large kinetic barriers that must be overcome during oxide formation and decomposition. Lastly, we present evidence that structurally similar oxides develop on both Pt(1 1 1) and Pt(1 0 0), therefore concluding that the properties of the surface Pt oxide are largely insensitive to the initial structure of the Pt single crystal surface.     

Adsorption and NiO(1 0 0) formation by atomic and molecular oxygen on Ni(1 1 0)

The structure of the ordered p(2 × 1) and p(3 × 1) phases of adsorbed oxygen as well as the formation of ultrathin NiO(1 0 0) layers on a Ni(1 1 0) single crystal are investigated by grazing scattering of fast hydrogen atoms. Via ion beam triangulation based on the detection of the number of emitted electrons, we obtain direct information on the structure of oxygen adsorbates and ultrathin nickel oxide layers. For oxidation using atomic instead of molecular oxygen, the gas exposure can be reduced by almost two orders of magnitude. We compare the experimental results with computer simulations based on classical projectile trajectories for grazing scattering of fast hydrogen atoms and test structure models for oxygen adsorbed on Ni(1 1 0) and NiO(1 0 0).     

Oxidation of Au nanoparticles on HOPG using atomic oxygen

Various Au nanostructures prepared on highly ordered pyrolytic graphite (HOPG) were oxidized using atomic oxygen under ultrahigh-vacuum conditions, and the oxygen species formed in the Au nanostructures were characterized using X-ray photoelectron spectroscopy (XPS). For an Au thin film, only a single oxygen species could be identified in the O 1s spectrum, which can be attributed to Au-oxide. For Au nanoparticles smaller than ∼10 nm, in contrast, two different oxygen species were detected, which are suggested to be Au-oxide and subsurface oxygen (or dissolved oxygen), respectively. CO titration experiments confirm the formation of different oxygen species depending on the particle size.     

Free radical reactions at the Ru(0 0 0 1) surface: Atomic oxygen and dissociated NH3

X-ray photoelectron spectroscopy was used to study the effect of atomic oxygen on Ru(0 0 0 1), and the effect of dissociated ammonia on RuO₂/Ru(0 0 0 1), in UHV conditions at ambient temperature. The Ru(0 0 0 1) surface was exposed, at ambient temperature, to a mixed flux of atomic and molecular oxygen generated by dissociation of O₂ in a thermal catalytic cracker, with 45% dissociation efficiency. The detailed study of the XPS spectra shows the formation of a disordered multilayer oxide (RuO₂). No formation of higher oxides of Ru was observed. The formation of RuO₂ proceeded without saturation for total oxygen exposures of up to 10⁵ Langmuir, at which point an average oxide thickness of 68 Å was observed. RuO₂ formed by the reaction with atomic oxygen was exposed to a flux of NH_x (x = 1, 2) + H generated by the cracker. The reduction of RuO₂ to Ru metal was observed by XPS. An exposure of 3.6 × 10² L of NH_x + H, resulted in the observation of adsorbed H₂O and OH, but no evidence of lattice oxide. The chemisorbed species were removed by additional NH_x + H exposure. No nitrogen adsorption was observed.     

Direct reaction of adsorbed molecular oxygen with hydrazine on a clean Pt(111) surface

The oxidation of hydrazine on the clean Pt(111) surface has been investigated by temperature-programmed reaction spectroscopy (TPRS) in the temperature range 130–800 K. Direct reaction of molecular oxygen is observed on the Pt(111) surface for the first time, as indicated by the desorption of nitrogen beginning at 130 K with a maximum rate at 145 K, below the molecular oxygen dissociation temperature. Direct reaction of hydrazine with adsorbed molecular oxygen results in the formation of water and nitrogen. With excess hydrazine, all surface oxygen is reacted, forming water. When only adsorbed atomic oxygen is present, the low-temperature nitrogen yield decreases by a factor of 3 and the peak nitrogen desorption temperature increases to 170 K. No high-temperature (450–650 K) nitrogen desorption characteristic of nitrogen atom recombination is seen, indicating that during oxidation the nitrogen-nitrogen bond in hydrazine remains intact, as observed previously for hydrazine decomposition on the Pt(111) surface and hydrazine oxidation on rhodium. Two water desorption peaks are observed, characteristic of desorption-limited (175 K) and reaction-limited (200 K) water evolution from the Pt(111) surface. For low coverages of hydrazine, only the reaction-limited water desorption is observed, previously attributed to water formed from adsorbed hydroxyl groups. When excess hydrazine is adsorbed, the usual hydrazine decomposition products, H₂, N₂ and NH₃, are also observed. No nitrogen oxide species (NO, NO₂ and N₂O) were observed in these experiments, even when excess oxygen was available on the surface.     

Photoelectron diffraction study of ultrathin film growth of Ni on Pt(111)

X-ray photoelectron diffraction (PD) based on a forward scattering approach (FS-PD) has been used to study the growth mode of the first few Ni monolayers deposited on the Pt(111) surface, with a particular attention to the initial stages of epitaxy, i.e. the formation of the first atomic layer. Strong evidences for a layer-by-layer (or Frank-Van der Merwe) growth mode are reported, substantiated also by theoretical simulations carried out with the single scattering cluster-spherical wave (SSC-SW) framework. The first Ni monolayer grows strained in-plane to match the substrate pseudomorphically even if there is a 10% mismatch between the lattice parameters of Ni and Pt. The multilayer (up at least to six monolayers) maintains the horizontal strain and consequently shows a vertical spacing contraction (tetragonal distorsion). It retains the overall threefold symmetry and azimuthal orientation of the substrate, indicative of a single-domain epitaxial fcc stacking. There is also some evidence (even if it is not conclusive) for the fact that the Ni atoms of the first monolayer occupy hcp sites of the substrate surface.     

Adsorption of gas-phase oxygen atoms on Pt(1 0 0)-hex-R0.7°: Evidence of a metastable chemisorbed phase

We utilized temperature programmed desorption (TPD) and low energy electron diffraction (LEED) to study the chemisorption of gas-phase oxygen atoms on Pt(1 0 0)-hex-R0.7° at 450 K and 573 K, and find that the types and relative populations of oxygen phases that develop are highly dependent on the surface temperature during adsorption. At both temperatures, oxygen atoms initially adsorb on defects associated with the surface reconstruction. Increasing the coverage to about 0.32 ML (monolayers) at 573 K causes deconstruction and population of a phase with apparent (3 × 1) symmetry that desorbs in a single feature centered at about 672 K. Saturating at 0.63 ML leads to the formation of an additional “complex” ordered phase that desorbs in a sharp feature exhibiting autocatalytic behavior as it shifts from approximately 631 K to 642 K. Uptake at 450 K also initiates deconstruction, but in this case two desorption maxima at about 652 K and 672 K grow simultaneously with increasing coverage to about 0.32 ML. The feature at 672 K is associated with the disordered (3 × 1) phase, while the feature at 652 K has not been previously reported. We attribute this new feature to desorption from disordered arrangements of high oxygen concentrations on (1 × 1) surface regions. As the coverage increases to about 0.51 ML, small amounts of the complex phase grow, while this “high-concentration” (1 × 1) and the (3 × 1) phases continue to develop. We conclude that the complex phase is energetically preferred over the high-concentration (1 × 1) phase, but kinetic barriers hinder its formation at 450 K, causing oxygen to become trapped in the high-concentration (1 × 1) phase. Therefore, the high-concentration (1 × 1) phase is metastable relative to the complex phase. Lastly, above about 0.51 ML, further adsorption at 450 K promotes the growth of Pt oxide islands as detailed in a future investigation.     

XPS study of SnTe(1 0 0) oxidation by molecular oxygen

The interaction between the (1 0 0) surface of SnTe single crystal and molecular oxygen was studied by means of X-ray photoelectron spectroscopy (XPS). Analysis of the obtained spectra shows that the mechanism of surface oxidation does not change in the range of oxygen exposure 10⁸-10¹³ L. During the oxidation an additional component shifted 1.1 eV towards higher binding energies appears in the Sn 3d spectra. The Te 3d_5/2 spectra fitting reveals two additional components with binding energies close to Te⁰ and Te⁺⁴. The dependence of the additional components fraction in both Sn 3d and Te 3d_5/2 spectra on the oxygen exposure is semi-logarithmic. On the base of the experimental data two possible mechanisms are proposed.     

Epitaxial growth of uniform NiSi2 layers with atomically flat silicide/Si interface by solid-phase reaction in Ni-P/Si(1 0 0) systems

As metal-oxide-semiconductor field-effect transistor (MOSFET) devices are shrunk to the nanometer scale, flat shallow metal/Si electrical contacts must be formed in the source/drain region. This work demonstrates a method for the formation of epitaxial NiSi₂ layers by a solid-phase reaction in Ni-P(8 nm)/Si(1 0 0) samples. The results show that the sheet resistance remained low when the samples were annealed at temperatures from 400 to 700 °C. P atoms can be regarded as diffusion barriers against the supply of Ni to the Si substrate, which caused the formation of Si-rich silicide (NiSi₂) at low temperature. Furthermore, elemental P formed a stable capping layer with O, Ni and Si during the annealing process. A uniform NiSi₂ layer with an atomically flat interface was formed by annealing at 700 °C because of the formation of a Si-Ni-P-O capping layer and a reduction in the total interface area.     

Initial growth of platinum on oxygen-covered Ni(1 1 0) surfaces

The initial growth of Pt on the Ni(1 1 0)-(3 × 1)-O and NiO(1 1 0) surfaces has been studied by coaxial impact collision ion scattering spectroscopy (CAICISS), low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). Prior to Pt deposition, the atomic structure of the near-surface regions of the Ni(1 1 0)-(3 × 1)-O and NiO(1 1 0) structures were studied using CAICISS, finding changes to the interlayer spacings due to the adsorption of oxygen. Deposition of Pt on the Ni(1 1 0)-(3 × 1)-O surface led to a random substitutional alloy in the near-surface region at Pt coverages both below and in excess of 1 ML. In contrast, when the surface was treated with 1800 L of atomic oxygen in order to form a NiO(1 1 0) surface, a thin Pt layer was formed upon room temperature Pt deposition. XPS and LEED data are presented throughout to support the CAICISS observations.     

Effect of poly silicon thickness on the formation of Ni-FUSI gate by using atomic layer deposited nickel film

The effect of poly-Si thickness on silicidation of Ni film was investigated by using X-ray diffraction, auger electron spectroscopy, cross-sectional scanning transmission electron microscopy, resistivity, I–V, and C–V measurements. The poly-Si films with various thickness of 30–200 nm were deposited by LPCVD on thermally grown 50 nm thick SiO₂, followed by deposition of Ni film right after removing the native oxide. The Ni film was prepared by using atomic layer deposition with a N²-hydroxyhexafluoroisopropyl-N¹ (Bis-Ni) precursor. Rapid thermal process was then applied for a formation of fully silicide (FUSI) gate at temperature of 500 °C in N₂ ambient during 30 s. The resultant phase of Ni-silicide was strongly dependent on the thickness of poly-Si layer, continuously changing its phase from Ni-rich (Ni₃Si₂) to Si-rich (NiSi₂) with increasing the thickness of the poly-Si layer, which is believed to be responsible for the observed flat band voltage shift, ΔV_FB, in C–V curves.     

Oxygen exchange between NO gas and adsorbed atomic oxygen on Pt(335)

We have used temperature-programmed desorption with isotopically labeled gases to study O exchange between gas phase NO and adsorbed atomic O on Pt(335). We find two distinct types of adsorbed O, one of which exchanges at least 40 times faster than the other, at room temperature. Based on their relative concentrations, we tentatively identify the more active species as O at the step edge and the less active one as O at terrace sites. The temperature dependence of the faster exchange rate implies two parallel reaction pathways. Above 240 K, the exchange rate increases with temperature with an apparent activation energy of 3.8 kcal mol⁻¹. At lower temperatures the exchange rate is nearly temperature-independent, with an apparent activation energy near zero but a very low pre-exponential factor. These results are interpreted in terms of a competition between oxygen exchange and NO desorption. The low-temperature process probably requires special sites or adsorbate configurations. The room temperature exchange rates of O₂ gas with preadsorbed atomic O, and with NO at edge sites, are more than 100 times slower than for NO gas and adsorbed O.     

The transition from surface to bulk oxide growth on Pt(1 0 0): Precursor-mediated kinetics

We investigated the kinetics governing the transition from surface (2D) to bulk (3D) oxide growth on Pt(1 0 0) in ultrahigh vacuum as a function of the surface temperature and the incident flux of an oxygen atom beam. For the incident fluxes examined, the bulk oxide formation rate increases linearly with incident flux (Φ_O) as the oxygen coverage increases to about 1.7 ML (monolayer) and depends only weakly on the surface temperature in the limit of low surface temperature (T_S < 475 K). In contrast, in the high temperature limit (T_S > 525 K), the bulk oxide formation rate increases with for oxygen coverages as high as 1.6 ML, and decreases with increasing surface temperature. We show that the measured kinetics is quantitatively reproduced by a model which assumes that O atoms adsorb on top of the 2D oxide, and that this species acts as a precursor that can either associatively desorb or react with the 2D oxide to form a 3D oxide particle. According to the model, the observed change in the flux and surface temperature dependence of the oxidation rate is due to a change in the rate-controlling steps for bulk oxide formation from reaction at low temperature to precursor desorption at high temperature. From analysis of flux-dependent uptake data, we estimate that the formation rate of a bulk oxide nucleus has a fourth-order dependence on the precursor coverage, which implies a critical configuration for oxide nucleus formation requiring four precursor O atoms. Considering the similarities in the development of surface oxides on various transition metals, the precursor-mediated transition to bulk oxide growth reported here may be a general feature in the oxidation of late transition metal surfaces.     

A study of the formation and oxidation of PtSi by SR-PES

In the paper we present the results on the formation of platinum silicide (PtSi) by means of synchrotron radiation photoelectron spectroscopy (SR-PES) and show the effect of a Pt/Si sample exposure to both a low and high-pressure oxygen atmosphere at the end of an annealing process. We have carried out a detailed analysis of high resolution photoelectron spectra of the Pt 4f and Si 2p peaks which were taken during the sample annealing at specific temperatures. In addition to the generally known Pt₂Si and PtSi phases we have recognized an additional intermediate phase during the formation of Pt₂Si and attributed it to the Pt₃Si phase. We have proved that silicon diffuses towards the sample surface. The results of a low-pressure oxygen experiment have shown that oxygen binds only to surface silicon, however, in the case of a PtSi sample prepared externally in the ON Semiconductor labs under nitrogen/oxygen atmosphere oxygen binds not only to surface silicon but also takes over Si atoms out of the PtSi phase which results in the formation of a SiO₂ layer on almost pure platinum.     

Growth and alloy formation of ultrathin Ni films on Co/Pt(1 1 1)

Low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES) were used to study the growth and the structural evolution of Ni/Co/Pt(1 1 1) following high-temperature annealing. From the oscillation of the specular beam of the LEED and Auger uptake curve, we concluded that the growth mode of thin Ni films on 1 ML Co/Pt(1 1 1) is at least 2 ML layer-by-layer growth before three-dimensional island growth begins. The alloy formation of Ni/1 ML Co/Pt(1 1 1) was analyzed by AES. The temperature for the intermixing of Ni and Co layers in the upper interface without diffusing into the bulk of Pt is independent of the thickness of Ni when a Co buffer is one atomic monolayer. After the temperature was increased, formations of Ni-Co-Pt alloy, Ni-Pt alloy and Co-Pt alloy were observed. The temperature required for the Ni-Co intermixing layer to diffuse into Pt bulk increases with the thickness of Ni. The interlayer distance as a function of annealing temperature for 1 ML Ni/1 ML Co/Pt(1 1 1) was calculated from the I-V LEED. The evolution of LEED patterns was also observed at different annealing temperatures.     

Segregation of Pt at clean surfaces of (Pt, Ni)3Al

Experimental evidence for surface segregation of Pt at (1 1 1) surfaces of ternary (Pt, Ni)₃Al alloys is presented, based upon Auger electron spectroscopy, low energy ion scattering, and angle-resolved X-ray photoelectron spectroscopy. Density functional calculations in the dilute limit confirm that Pt segregation is energetically favored.     

Zirconium-assisted reaction in low temperature atomic layer deposition using Bis(ethyl-methyl-amino)silane and water

The reaction of Bis(ethyl-methyl-amino)silane (BEMAS) and water in atomic layer deposition (ALD) became possible when Zr-containing species were adsorbed on the vacant sites of the surface after a pulse and purge of BEMAS. The growth rates of the Si(Zr)O_x films were 0.8-0.9 nm/cycle in the temperature range of 185-325 °C. This phenomenon probably originates from the highly reactive hydroxyl species generated by Zr atoms. From this point of view, transition metals make reactant gas molecules to be highly activated in the ALD processes of transition metal oxides and nitrides, which might be an important factor that determines the ALD characteristics.     

Thermal stability and electrical characteristics of NiSi films with electroplated Ni(W) alloy

In this study, an electroplating method to deposited Ni, crystalline NiW(c-NiW), amorphous NiW (a-NiW) films on P-type Si(1 0 0) were used to form Ni-silicide (NiSi) films. After annealed at various temperatures, sheet resistance of Ni/Cu, c-NiW/Cu and a-NiW/Cu was measured to observe the performance of those diffusion barrier layers. With W added in the barrier layer, the barrier performance was improved. The results of XRD and resistance measurement of the stacked Si/Ni(W)/Cu films reveal that Cu atom could diffuse through Ni barrier layer at 450 °C, could diffuse through c-NiW at 550 °C, but could hardly diffuse through a-NiW barrier layer. c-NiW layer has a better barrier performance than Ni layer, meanwhile the resistance is lower than a-NiW layer.     

Oxidation of TiNi surface with hyperthermal oxygen molecular beams

We report results of our detailed studies on the initial oxidation process of TiNi with a 2 eV hyperthermal oxygen molecular beam (HOMB) and thermal O₂ in the backfilling. The oxidation processes are monitored by X-ray photoemission spectroscopy (XPS) measurements in conjunction with synchrotron radiation (SR). In the early stage of oxidation, the precursor mediated dissociative adsorption is the dominant reaction mechanism. In the oxide formation process at higher O coverage, HOMB has the advantage in the dissociation process of O₂ molecule and can grow TiO₂ layers with the underlying TiO_x-rich and/or Ni-rich layers. We succeeded in fabricating thick Ni-free TiO₂ layer, possibly blue colored rutile TiO₂, combining HOMB and surface annealing.     

Alloy formation of Co/Ni/Pt(1 1 1)

The initial growth and alloy formation of ultrathin Co films deposited on 1 ML Ni/Pt(1 1 1) were investigated by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), and ultraviolet photoelectron spectroscopy (UPS). A sequence of samples of d_Co Co/1 ML Ni/Pt(1 1 1) (d_Co = 1, 2, and 3 ML) were prepared at room temperature, and then heated up to investigate the diffusion process. The Co and Ni atoms intermix at lower annealing temperature, and Co-Ni intermixing layer diffuses into the Pt substrate to form Ni-Co-Pt alloys at higher annealing temperature. The diffusion temperatures are Co coverage dependent. The evolution of UPS with annealing temperatures also shows the formation of surface alloys. Some interesting LEED patterns of 1 ML Co/1 ML Ni/Pt(1 1 1) show the formation of ordered alloys at different annealing temperature ranges. Further studies in the Curie temperature and concentration analysis, show that the ordered alloys corresponding to different LEED patterns are Ni_xCo_1−xPt and Ni_xCo_1−xPt₃. The relationship between the interface structure and magnetic properties was investigated.