Determination of the positron diffusion length in Kapton by analysing the positronium emission

Doppler profile spectroscopy and Compton-to-peak ratio analysis have been used to study the positronium (Ps) emission from the Kapton surface as a function of the positron implantation energy E.Two different positions for the sample have been performed in the experiment.In the first case the sample and the Ge-detector are perpendicular to the positron beam. With this geometry the emission of para-positronium (p-Ps) is detected as a narrow central peak.In the second case, by rotating the sample 45° with respect to the beam axis, the emission of p-Ps is detected as a blue-shifted fly away peak. The implantation of the positrons is described by the Makhov profile, where we used the modified median implantation for polymers as given by Algers et al. [J. Algers, P. Sperr, W. Egger, G. Kögel, F.H.J. Maurer, Phys. Rev. B 67 (2003) 125404].Thermalised positrons can diffuse to the surface and may pick up an electron to be emitted as Ps. We found a thermal and or epithermal positron diffusion length L₊ = 5.43 ± 0.71 nm and L₊ = 5.51 ± 0.28 nm correspondingly for both cases, which is much more than the one found by Brusa et al. [R.S. Brusa, A. Dupasquier, E. Galvanetto, A. Zecca, Appl. Phys. A 54 (1992) 233]. The respective efficiency for the emission of Ps by picking up an electron from the surface is found to be f_pu = 0.247 ± 0.012 and f_pu = 0.156 ± 0.003.     

GaN-a new material for positron moderation

GaN with its wide bandgap might be of interest as a positron moderation material in much the same way as SiC is. To investigate this, positron beam experiments have been performed to establish the diffusion behaviour and surface branching of positrons implanted with energies varying from 0 to 25 keV into an epitaxially grown layer of semi-insulating GaN on a sapphire substrate. The measured diffusion length of the positrons amounted to 19.3 ± 1.4 nm. The surface branching ratios were as follows: 48% positron emission, 12% positronium formation and 40% trapping at the surface. The positron workfunction was shown to be negative with a value of 2.4 ± 0.3 eV. The materials feasibility for positron moderation and its possible use in field assisted moderation is discussed.     

Processing for optically active erbium in silicon by film co-deposition and ion-beam mixing

Techniques of film deposition by co-evaporation, ion-beam assisted mixing, oxygen ion implantation, and thermal annealing were been combined in a novel way to study processing of erbium-in-silicon thin-film materials for optoelectronics applications. Structures with erbium concentrations above atomic solubility in silicon and below that of silicide compounds were prepared by vacuum co-evaporation from two elemental sources to deposit 200-270 nm films on crystalline silicon substrates. Ar⁺ ions were implanted at 300 keV. Oxygen was incorporated by O⁺-ion implantation at 130 keV. Samples were annealed at 600 °C in vacuum. Concentration profiles of the constituent elements were obtained by Rutherford backscattering spectrometry. Results show that diffusion induced by ion-beam mixing and activated by thermal annealing depends on the deposited Si-Er profile and reaction with implanted oxygen. Room temperature photoluminescence spectra show Er³⁺ transitions in a 1480-1550 nm band and integrated intensities that increase with the oxygen-to-erbium ratio.     

Optical and mechanical properties of alumina films fabricated on Kapton polymer by plasma immersion ion implantation and deposition using different biases

Alumina films are fabricated on Kapton polymer by aluminum plasma immersion ion implantation and deposition in an oxidizing ambient and the effects of the bias voltage on the film properties are investigated. Rutherford backscattering spectrometry (RBS) reveals successful deposition of alumina films on the polymer surface and that the O to Al ratio is higher than that of stoichiometric Al₂O₃. The thickness of the modified layers decreases from 200 to 120 nm when the bias voltage is increased from 5 to 20 kV. Our results indicate that higher bombardment energy may lead to higher crack resistance and better film adhesion. However, a higher sample bias degrades the optical properties of the films as indicated by the higher absorbance and lower energy band gap. Therefore, the processing voltage must be optimized to yield a protective layer with the appropriate thickness, superior optical properties, as well as high crack resistance.     

Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(1 0 0)

Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N₂ ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 °C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by θ-2θ X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano-thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 °C.     

Construction and timing system of the EPOS beam system

The Forschungszentrum Dresden-Rossendorf provides an intense pulsed 40 MeV electron beam with high brilliance and low emittance (ELBE). The pulse has a length of 1-10 ps and a repetition time of 77 ns, or in slow mode 616 ns. The EPOS system (ELBE Positron Source) generates by pair production on a tungsten converter and a tungsten moderator an intense pulsed beam of mono-energetic positrons. To transport the positrons to the laboratory (12 m) we constructed a magnetic beam guidance system with a longitudinal magnetic field of 75 G. In the laboratory outside the cave, the positron beam is chopped and bunched according to the time structure, because the very sharp bunch structure of the electron pulses is broadened for the positron beam due to transport and moderation.     

Modifications of He implantation induced cavities in silicon by MeV silicon implantation

Doppler broadening spectroscopy (DBS) coupled to a slow positron beam has been used to investigate the formation of He-cavities in the presence of high vacancy concentrations in Cz-Si (1 1 1). Si samples were first implanted with MeV Si ions in order to create a damaged Si layer. DBS measurements show the presence of divacancy (SV₂/SSi lattice=1.052,WV₂/WSi lattice=0.83) from the surface up to 4.2 μm depth with a concentration higher than 10¹⁸ cm⁻³. The thickness of this damaged layer was confirmed by spreading resistance measurements. In the second step, samples were implanted with 50 keV ³He with fluence of 10¹⁶ cm⁻². DBS results show that the apparent divancancy concentration decreases at ³He implantation depth ∼435 nm due to ³He passivation of vacancies that occurs during the implantation process. After 900 °C annealing, large defects are detected at depth up to 2 μm and (S, W) values suggest the detection of cavities at the implantation depth. We also report the possible presence of impurity complexes. The formation of these complexes is attributed to the gettering of metallic impurities present in the Si sample.     

Preparation of dielectric mirrors from high-refractive index contrast amorphous chalcogenide films

We report the preparation of planar 15-layer dielectric mirrors by a thermal evaporation of alternating high refractive index contrast amorphous chalcogenide Sb-Se and Ge-S layers, exhibiting a high-reflection band around 1.55 μm. The layer deposition quality and the thickness accuracy of such prepared chalcogenide multilayers were then checked using transmission electron microscopy. The layer thickness deviation of chalcogenide layers did not exceed ∼7 nm in comparison with the desired thicknesses. The width of Sb-Se/Ge-S layer boundary was approximately ∼3 nm, which is in good agreement with the surface roughness values of thermally evaporated Sb-Se and Ge-S single layers. The optical properties of the prepared 15-layer dielectric mirrors were consistent in temperature range of 20-120 °C; however, at higher temperatures there started apparent structural changes of Sb-Se films, which were followed by their crystallization. Excellent optical properties of chalcogenide materials in the infrared range make them interesting for applications, e.g., in optics and photonics.     

First positron experiments at NEPOMUC

The in-pile positron source NEutron induced POsitron source MUniCh (NEPOMUC) of the new Munich research reactor FRM-II is now operated at the nominal reactor power of 20 MW. Recently, intensity and positron beam profile measurements were performed at 30 eV and 1 keV, respectively. For this purpose, NaI-scintillators detect the 511 keV γ-radiation of positrons that annihilate at a removable target in the beam line. The beam profile is determined with a micro-channel plate detector and a CCD-camera. In the present arrangement of NEPOMUC's instrumentation the positron beam is connected to a coincident Doppler broadening (CDB) facility and to a positron induced Auger electron spectroscopy (PAES) analysis chamber. First experiments were carried out in order to show the performance of these new spectrometers. An overview of the positron beam facility is given and first experimental results of PAES are presented.     

Emission of positronium in a nanometric PMMA film

Positron beam experiments have been performed for the first time on a self-supporting polymethyl metacrylate (PMMA) film of 310 nm-thick made by spin coating. The positronium (Ps) emission from the PMMA surface is studied as a function of the positron implantation energy by using Doppler profile spectroscopy and Compton-to-peak ratio analysis. When the sample and the Ge-detector are perpendicular to the positron beam, the emission of para-positronium (p-Ps) is detected as a narrow central peak. By rotating the sample 45° with respect to the beam, the emission of p-Ps is detected as a blue-shifted fly-away peak. The bulk Ps fraction, the efficiency for the emission of Ps by picking up an electron from the surface, and the diffusion lengths of positrons (thermal and or epithermal), p-Ps and ortho-positronium (o-Ps) are obtained.     

Orthopositronium annihilation and emission in mesostructured thin silica and silicalite-1 films

Mesoporous silica films and MFI-type pure silica zeolite films were investigated using slow positrons. Detection of the 3γ annihilation fraction was used as a quick test to estimate the emission of orthopositronium (o-Ps) into vacuum. Positronium time-of-flight (TOF) spectroscopy, combined with Monte-Carlo simulation of the detection system was used to determine the energy of o-Ps emitted from the films. Evidence for an efficient o-Ps emission was found in both the mesoporous and silicalite-1. A 3γ fraction in the range of 31-36 % was found in the films with the highest o-Ps yield in each type of porous material, indicating that 40-50 % of the implanted positrons form positronium in the pore systems with very different pore sizes. Time-of-flight measurements showed that the energy of the orthopositronium emitted into vacuum is below 100 meV in the film with 2-3 nm pores at 3 keV positron energy, indicating an efficient slowing down but no complete thermalization in the porous films of 300-400 nm thickness.     

Surface states and annihilation characteristics of positrons trapped at reconstructed semiconductor surfaces

Positron probes of the Si(1 0 0) surface that plays a fundamental role in modern science and technology are capable to non-destructively provide information that is both unique to the probe and complimentary to that extracted using other more standard techniques. This paper presents a theoretical study of positron “image-potential” surface states and annihilation characteristics of surface trapped positrons at the Si(1 0 0) surface. Calculations are performed for the reconstructed Si(1 0 0)-p(2 × 2) surface using the modified superimposed-atom method to account for discrete-lattice effects, and the results are compared with those obtained for the non-reconstructed and reconstructed Si(1 0 0)-(2 × 1) and Si(1 1 1)-(7 × 7) surfaces. The effect of orientation-dependent variations of the atomic and electron densities on localization and extent of the positron surface state wave function at the semiconductor surface is explored. The positron surface state wave function is found to extend into the Si lattice in the regions where atoms are displaced from their ideal terminated positions due to the p(2 × 2) reconstruction. Estimates of the positron binding energy and positron annihilation characteristics reveal their sensitivity to the specific atomic structure of the topmost layers of Si. The observed sensitivity of annihilation probabilities to crystal face indicates that positron spectroscopy techniques could serve as an important surface diagnostic tool capable of distinguishing different semiconductor surfaces and defining their state of reconstruction.     

Structural and IR studies on Cu-Ti mixed ferrite

The sensitivity of the positron to the internal electric fields in good quality thin (100 nm) Molecular Beam Epitaxy (MBE)-grown layers is experimentally demonstrated. Both a thin intrinsic layer grown on a p-type substrate and a highly n-doped profile buried in intrinsic silicon form effective barriers to positron diffusion although no defects can be detected. We also extract, from a full treatment of the positron diffusion, a quantitative estimate of the concentration, below the detection limits of other methods, of large vacancy clusters in a thick (680 nm) film.     

EPOS—An intense positron beam project at the ELBE radiation source in Rossendorf

EPOS, the acronym of ELBE Positron Source, describes a running project to build an intense pulsed beam of mono-energetic positrons (0.2-40 keV) for materials research. Positrons will be created via pair production at a tungsten target using the pulsed 40 MeV electron beam of the superconducting linac electron linac with high brilliance and low emittance (ELBE) at Forschungszentrum Rossendorf (near Dresden, Germany). The chosen design of the system under construction is described and results of calculations simulating the interaction of the electron beam with the target are presented, and positron beam formation and transportation is also discussed.     

Synthesis of Y-junction carbon nanotubes within porous anodic aluminum oxide template

Y-junction carbon nanotubes with the average diameter about 200 nm were successfully synthesized within porous anodic aluminum oxide template, which was prepared by anodic anodizing aluminum sheet in 1.0 mol/l H₃PO₄ solution at a constant anodization voltage 90 V.     

Study on low-energy bombardment of Au (1 1 1) by noble metal atoms with molecular dynamics simulations

The low-energy bombardment of Au (1 1 1) surface by noble metal atoms is studied with molecular dynamics (MD) simulations. With the incident-energy dependence of adatom yields, sputtering yields, and vacancy yields for different projectiles, we find that the implantation of projectiles in shallow layers below surface can be distinguished by subplantation (in the first and second layers) and implantation (deeper than the third layer). The transition from subplantation to implantation occurs at the incident energy of about 45 eV for the low-energy bombardment of noble metal atoms on Au (1 1 1). The incident-energy dependence of defect yields is obviously different for the subplantation and implantation of projectiles. Based on our MD simulations, we discuss the influence of low-energy bombardment on film growth and the guide to the search for optimum deposition parameters.     

Effect of metal diffusion into polycrystalline 6H–SiC prior to its anodization on luminescence response

p-Type porous SiC layers were fabricated by anodization of resistive p-type 6H–SiC samples using HF/ethylene glycol solution. Thin films of lithium (Li) and aluminum (Al) as donor and acceptor elements were vacuum deposited and diffused onto SiC substrates prior to anodization. The aim of this work is to investigate the properties of the nanoporous SiC layer formed by this method and to deduce the effect of diffused lithium as donor and Al as acceptor atoms on their photoluminescence response (PL). The profile distribution of lithium and aluminum diffused atoms was carried out using secondary ion mass spectrometry (SIMS). The photoluminescence spectra of the anodized Al-diffused samples exhibit a broad emission band centered at about 475 nm, while the Li-diffused samples exhibit luminescence with one broad peak located at 655 nm, attributed to Li-related defect centers. In addition, the PL intensity of lithium diffused samples varies with varying the etching time. Finally, the results are expected to have important applications in modern optoelectronic devices and electrode materials of lithium batteries.     

Self-implantation of Cz-Si: Clustering and annealing of defects

Observations of vacancy clusters formed in Czochralski (Cz) Si after high energy ion implantation are reported. Vacancy clusters were created by 2 MeV Si ion implantation of 1 × 10¹⁵ ions/cm² and after annealing between 600 and 650 °C. Doppler broadening measurements using a slow positron beam have been performed on the self-implanted Si samples, both as-implanted and after annealing between 200 and 700 °C for time intervals ranging from 15 to 120 min. No change in the S parameter was noted after the thermal treatment up to 500 °C. However, the divacancies (V₂) created as a consequence of the implantation were found to start agglomerating at 600 °C, forming vacancy clusters in two distinct layers below the surface; the first layer is up to 0.5 μm and the second layer is up to 2 μm. The S-W plots of the data suggest that clusters of the size of hexavacancies (V₆) could be formed in both layers after annealing for up to an hour at 600 °C or half an hour at 650 °C. After annealing for longer times, it is expected that vacancies are a mixture of V₆ and V₂, with V₆ most probably dominating in the first layer. Further annealing for longer times or higher temperatures breaks up the vacancy clusters or anneals them away.     

Effect of alkaline cleaning and activation on aluminum alloy 7075-T6

The effect of alkaline cleaning and activation on the composition and thickness of the oxide layer on aluminum alloy 7075-T6 was studied. E-pH diagrams were developed to predict the effect of alkaline cleaning and activation solutions on the stability of the oxide surface layers. The thickness of the native oxide layer was determined to be ∼30 nm by Auger electron spectroscopy depth profiling analysis. The outer ∼20 nm was rich in magnesium while the remaining ∼10 nm was rich in aluminum. Cleaning in a 9.1 pH alkaline solution was found to remove the magnesium-rich layer and leave behind an aluminum-rich oxide layer ∼10 nm thick. Activation in alkaline solutions of NaOH (pH > 12.9) or Na₂CO₃ (pH > 11.5) produced an oxide that was ∼20 to 60 nm thick and rich in magnesium. Alkaline cleaning and activation altered the oxide composition and thickness making it possible for deposition of thicker cerium-based conversion coatings (∼100 to 250 nm) compared to only alkaline cleaning (∼30 nm), with application of one spray cycle of deposition solution.     

Effects of different buffer layers on the electro-luminescence performances in white organic light-emitting diodes

The effects of different hole injection materials as the buffer layer on the electro-luminescence (EL) performances of white organic light-emitting diodes (WOLEDs) are investigated in detail. It is found that the EL performances and electric properties were strongly dependent on the structure of the used hole injection materials with different thicknesses, which directly affected the injection and transport properties in devices, and thus the EL efficiency and lifetime. It can be seen that a hybrid buffer layer of 5 nm aluminum fluoride (AlF₃)/15 nm 4,4′,4″-tris(3-methylphenylphenylamino) (m-MTDATA) as the hole injection buffer layer shows the best EL performances in efficiency and lifetime, showing a promising hole injection material in WOLEDs. The mechanisms behind the enhanced performance of the hybrid buffer layer in WOLEDs are discussed based on X-ray photoelectron spectroscopy (XPS) measurement.