Co-induced nano-structures on Si(1 1 1) surface

The interaction of cobalt atoms with silicon (1 1 1) surface has been investigated by means of scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED). Besides the Co silicide islands, we have successfully distinguished two inequivalent Co-induced reconstructions on Si(1 1 1) surface. Our high-resolution STM images provide some structural properties of the two different derived phases. Both of the two phases seem to form islands with single domain. The new findings will help us to understand the early stage of Co silicide formations.     

Surface phase diagram and temperature induced phase transitions of Sn/Cu(1 0 0)

Room temperature deposition of Sn on Cu(1 0 0) gives rise to a rich variety of surface reconstructions in the submonolayer coverage range. In this work, we report a detailed investigation on the phases appearing and their temperature stability range by using low-energy electron diffraction and surface X-ray diffraction. Previously reported reconstructions in the submonolayer range are p(2 × 2) (for 0.2 ML), p(2 × 6) (for 0.33 ML), ()R45° (for 0.5 ML), and c(4 × 4) (for 0.65 ML). We find a new phase with a structure for a coverage of 0.45 ML. Furthermore, we analyze the temperature stability of all phases. We find that two phases exhibit a temperature induced reversible phase transition: the ()R45° phase becomes ()R45° phase above 360 K, and the new phase becomes p(2 × 2) also above 360 K. The origin of these two-phase transitions is discussed.     

Atomic structure of thin dysprosium-silicide layers on Si(1 1 1)

We report on scanning tunneling microscopy results of thin dysprosium-silicide layers formed on Si(1 1 1). In the submonolayer regime, both a and a 5 × 2 superstructure were found. Based on images taken at different tunneling conditions, a structure model could be developed for the superstructure. For one monolayer, a 1 × 1 superstructure based on hexagonal DySi₂ was observed, while several monolayers thick films are characterized by a superstructure from Dy₃Si₅.     

Modelling of phase transitions and reaction at CO adsorption on oxygen precovered Pd(1 1 1)

Using the interaction parameters up to the third neighbors and activated form of O and CO diffusion and their reaction, the model has been proposed for Monte-Carlo simulations describing the catalytic O + CO → CO₂ reaction and occurring phase transitions on Pd(1 1 1) surface. Upon adsorption of CO the pre-adsorbed oxygen transforms from p(2 × 2)_O phase into and phases in the limit of room and moderate temperatures, respectively. We demonstrate that the kinetic effects determine both the occurrence of the p(2 × 1)_O and disappearance of the phases at moderate and low temperatures, respectively. Using reaction rate as a fit parameter, we show that at room temperature the start of the reaction can be synchronized with the occurrence of phase.     

Electronic structure of dysprosium silicide films grown on a Si(1 1 1) surface

The thickness-dependent electronic structures of Dy silicide films grown on a Si(1 1 1) surface have been investigated by angle-resolved photoelectron spectroscopy. Two (1×1) periodic bands, both of them cross the Fermi level, have been observed in the silicide films formed by Dy coverages of 1.0 monolayer and below, and more than five () periodic bands have been observed in thicker films. Taking the () periodic structure of Dy atoms in the submonolayer silicide film into account, the periodicity of the two metallic bands indicate that they mainly originate from the orbitals of Si atoms, which form a (1×1) structure. Of the () periodic bands observed in thick films, four of them are well explained by the folding of the (1×1) bands into a () periodicity. Regarding the other band, the three () periodic bands would originate from the electronic states related to the inner Si layers that form a () structure, and the one observed in the 3.0 ML film only might originate from the electron located at the interface between bulk Si and the Dy silicide film.     

Electronic structure of the Sb-induced Si(1 1 3)2 × 5 surface

The surface electronic structure of Sb/Si(1 1 3)2 × 5 was investigated by angle-resolved photoemission spectroscopy experiments. This reveals Sb/Si(1 1 3)2 × 5 to have three surface bands with anisotropic two-dimensional characteristics. The band widths of the surface bands along is larger than along . The number of surface bands of Sb/Si(1 1 3)2 × 5 and their band dispersions along and are quite analogous with those of Sb/Si(1 1 3)2 × 2 composed of Sb adatom and Si tetramer chains. The electronic structure analogy suggests that Sb/Si(1 1 3)2 × 5 and Sb/Si(1 1 3)2 × 2 have common building blocks such as Sb adatom and Si tetramer chains.     

Sapphire (0 0 0 1) surface modifications induced by long-pulse 1054 nm laser irradiation

We have investigated modifications of sapphire (0 0 0 1) surface with and without coating, induced by a single laser pulse with a 1054 nm wavelength, 2.2 s duration, 7.75 mm spot and energy of 20-110 J. A holographic optical element was used for smoothing the drive beam spatially, but it induced small hotspots which initiated damage on the uncoated and coated surfaces. The individual damage effects of hotspots became less pronounced at high fluences. Due to high temperature and elevated non-hydrostatic stresses upon laser irradiation, damage occurred as fracture, spallation, basal and rhombohedral twinning, melting, vitrification, the formation of nanocrystalline phases, and solid-solid phase transition. The extent of damage increased with laser fluences. The formation of regular linear patterns with three-fold symmetry ( directions) upon fracture was due to rhombohedral twinning. Nanocrystalline -Al₂O₃ formed possibly from vapor deposition on the coated surface and manifested linear, triangular and spiral growth patterns. Glass and minor amounts of -Al₂O₃ also formed from rapid quenching of the melt on this side. The - to -Al₂O₃ transition was observed on the uncoated surface in some partially spalled alumina, presumably caused by shearing. The nominal threshold for laser-induced damage is about 47 J cm⁻² for these laser pulses, and it is about 94 J cm⁻² at the hotspots.     

Aromatic interactions in the close packing of phenyl-imides at Cu(1 1 0) surfaces

The oxidation of aniline at Cu(1 1 0) surfaces at 290 K has been studied by XPS and STM. A single chemisorbed product, assigned to a phenyl imide (C₆H₅N(a)), is formed together with water which desorbs. Reaction with preadsorbed oxygen results in a maximum surface concentration of phenyl imide of 2.8 × 10¹⁴ mol cm⁻² and a surface dominated by domains of three structures described by , and unit meshes. However, concentrations of phenyl imide of up to 3.3 × 10¹⁴ mol cm⁻² were obtained from the coadsorption of aniline and dioxygen (300:1 mixture) resulting in a highly ordered biphasic structure with and domains. Comparison of the STM and XPS data shows that only half the phenyl imides at the surface are imaged. Pi-stacking of the phenyl rings is proposed to account for this observation.     

Adsorption structure of germanium on the Ru(0 0 0 1) surface

Coverage-dependent adsorption energy of the Ge/Ru(0 0 0 1) growth system and the geometrical distortions of the most stable adsorption structure are investigated through first-principles calculations within density functional theory. A local minimum in adsorption energy is found to be at a Ge coverage of 1/7 monolayer with a Ru(0 0 0 1)- symmetry. Based on this stale superstructure, the scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) images are simulated by means of surface local-density of states (LDOS). The results are consistent well with the STM measurements on the phase for Ge overlayer on Ru(0 0 0 1). From this stimulation, the relations between the STM images and the lattice distortion are also clarified.     

Electronic structure of (0 0 1) AlN/GaN quantum wells by means of a spsd empirical tight-binding Hamiltonian

We have studied the electronic band structure of (0 0 1) AlN/GaN quantum wells by means of a sp³s^∗d⁵ empirical tight-binding Hamiltonian with nearest-neighbor interactions, including spin-orbit coupling and the effects of strain together with the surface Green function matching method. We have analyzed quantum wells with a thickness in the range 2 ? n ? 50, n being the number of principal layers of GaN in the well region. Results are presented for the point and the direction of the 2D Brillouin zone. The orbital character and the spatial localization of the different states have been also studied.     

STM study of l-serine adsorption on Cu(0 0 1)

The adsorption of l-serine on Cu(0 0 1) surface at 310 K was studied by scanning tunneling microscope (STM). l-serine molecules on the Cu(0 0 1) initially formed a domain of thick lines with a order structure along the direction on the terraces regardless of the coverage of serine. The thick lines were partly replaced by thin line along the direction, and completely disappeared in 2 h. It is considered that in these structures hydrogen bonds involved in hydroxymethyl group between adsorbates play some role in addition to intermolecular hydrogen bond between a hydrogen atom of amino group and an oxygen atom of carboxy group for alanine adsorption.     

GaN/LiNbO3 (0 0 0 1) interface formation calculated from first-principles

The stable adsorption sites for both Ga and N ions on the ideal and on the reconstructed LiNbO₃ (0 0 0 1) surface are determined by means of first-principle total energy calculations. A single N layer is found to be more strongly bound to the substrate than a single Ga layer. The adsorption of a GaN monolayer on the polar substrate within different orientations is then modeled. On the basis of our results, we propose a microscopic model for the GaN/LiNbO₃ interface. The GaN and LiNbO₃ (0 0 0 1) planes are parallel, but rotated by 30° each other, with in-plane epitaxial relationship [1 0 0]_GaN‖ [1 1  0]_LiNbO3. In this way the (0 0 0 1) plane lattice mismatch between GaN and LiNbO₃ is minimal and equal to 6.9% of the GaN lattice constant. The adsorbed GaN and the underlying LiNbO₃ substrate have parallel c-axes.     

Coadsorption of CO and C6H6 on Co(0 0 0 1)

We have studied the influence of CO on the adsorption of benzene on the Co(0 0 0 1) surface using LEED, XPS, TDS and work function measurements. CO was found to reduce the benzene adsorption, but even at saturation CO exposure no complete blocking was observed. Thermal desorption of the coadsorbed layer featured CO and H₂ peaks indicating partial dehydrogenation of benzene and retaining of the CO bond. Ordered LEED structures were found with all coverages: Pre-adsorption of CO led to patterns already seen for pure carbon monoxide adsorption. Pre-adsorption of benzene showed the known structure of pure benzene also with small CO exposures, but higher CO exposures yielded a mixture of and patterns.     

Reversible electromigration of thallium adatoms on the Si(1 1 1) surface

By means of low-energy electron diffraction (LEED), we found a reversible structural change of on thallium (Tl) adsorbed Si(1 1 1) surfaces by switching the polarity of applied DC voltage for heating the sample. It was shown in the literature that Tl adatoms are located on the T₄ sites of the bulk-terminated surface both in the (1 × 1) and . It is clarified that the structural change is caused by the electromigration of the Tl adatoms. Tl atoms migrate towards the cathode, being induced by the electric field (10-20 V/cm). We discussed an atomic process of the electromigration.     

Fe monolayers on InAs(0 0 1): An in situ study of surface, interface and volume magnetic anisotropy

The magnetic anisotropy of epitaxial Fe films with thicknesses in the range of 2-142 monolayers (ML) grown on {4×2} reconstructed InAs(0 0 1) was investigated by in situ ferromagnetic resonance. The easy magnetization direction was found to be parallel to the -direction for Fe films below 4 ML, while it rotates by 45^° toward the -direction. It is observed that both surface-interface and volume contribution to the perpendicular anisotropy favor an easy axis perpendicular to the film plane. The cubic surface-interface anisotropy is relatively large with easy axes along -directions in contrast to the volume contribution which favors easy axes along the -directions. The volume contribution is found to be larger than the Fe bulk cubic anisotropy. A thickness independent uniaxial anisotropy has been found in films with a thickness of 2 up to 142 ML.     

Growth of well-aligned Bi nanowire on Ag(1 1 1)

We report the fabrication of one-dimensional (1D) Bi nanowires grown on Ag(1 1 1) with average lateral width from 9 to 20 nm by physical vapor deposition in ultra high vacuum conditions. In situ low-temperature scanning tunneling microscopy analyses reveal that the preferred growth of 1D Bi nanostructures is driven by the highly anisotropic bonding in the crystallographic structure of the Bi(1 1 0) plane. The Bi nanowires grow along direction and align with the directions on Ag(1 1 1). The growth of the Bi nanowires proceeds in a bilayer growth mode resulting from the layer pairing in Bi(1 1 0) which saturates the dangling bonds and lowers the total energy.