Fabrication of two types of one-dimensional Si–C nanostructures by laser ablation

Two types of one-dimensional (1D) nanostructures—amorphous silicon carbide (SiC) nanowires, 5–30 nm thick and 0.5–2 μm long, and carbon nanotubes (CNTs) filled completely with crystalline SiC nanowires, 10–60 nm thick and 2–20 μm long—were synthesized by the laser ablation of carbon-silicon targets in the presence of high-pressure Ar gas up to 0.9 MPa. All the CNTs checked by transmission electron microscopy contained SiC, and no unfilled CNTs were produced. We discuss the growth of the two nanostructures based on the formation of molten Si–C composite particles and their instabilities leading to the precipitation of Si and C.     

Size control of Si nanocrystals by two-step rapid thermal annealing of sputtered Si-rich oxide/SiO2 superlattice

Controllable size of silicon (Si) nanocrystals can be achieved by a two-step rapid thermal annealing technique consisting of rapid annealing at 1000°C in nitrogen ambient and rapid oxidation at 600–800°C of a radio frequency magnetron co-sputtered Si-rich oxide/SiO₂ superlattice structure. The photoluminescence (PL) spectra related to Si nanocrystals were observed in the visible range (600–900 nm). After rapid oxidation, the size of the nanocrystals was reduced and the quality of the Si nanocrystal/SiO₂ interface was improved, resulting in a blue shift and an increase of the PL peak intensity. Finally, annealing in air increases the PL intensity further.     

Anhydrous proton-conducting organic–inorganic hybrid membranes synthesized from tetramethoxysilane/methyltrimethoxysilane/diisopropyl phosphite and ionic liquid

Inorganic–organic hybrid membranes were prepared by sol–gel process with tetramethoxysilane/methyltrimethoxysilane/diisopropyl phosphite and 1-butyl-3-methylimidazolium tetrafluoroborate (BMIMBF₄) ionic liquid as precursors. The Fourier transform infrared spectroscopy (FT-IR) and ³¹P, ²⁹Si, ¹H, ¹³C, and ¹⁹F nuclear magnetic resonance measurements have shown good chemical stability and complexation of (POH[(CH₃)₂CHO]₂) with [BMIMBF₄] ionic liquid in the fabricated hybrid membranes. The influence of the textural properties of all the prepared composite membranes could be interpreted from nitrogen adsorption–desorption measurements. The average pore size was increased proportionally with the ionic liquid weight percent ratio in the host phosphosilicate matrix from 2.59 to 11.71 nm, respectively. Thermogravimetric analysis and differential thermal analysis measurements confirmed that the hybrid membranes were thermally stable up to 260 °C. Thermal stability of the hybrid membranes was significantly enhanced by the presence of inorganic SiO₂ framework and high stability of [BF₄] anion. For all the composite membranes, the conductivities were measured within the temperature range (−30 °C) to 150 °C, and a maximum conductivity of 7 × 10⁻³ S/cm at 150 °C was achieved for 40 wt.% ionic liquid-based composite membrane under nonhumidified conditions.     

Self-assembled SiGe quantum dots embedded in Ge matrix by Si ion implantation and subsequent annealing

We have fabricated SiGe quantum dots (QDs) by means of a two-step Si ion implantation followed by thermal rapid thermal annealing (RTA) method. SiGe QDs with the 4–6 nm diameter are formed uniformly in the near-surface region of Ge substrate. The RTA processes are performed at 800 and 900 °C for 15 s, respectively. Both experimental and theoretical analysis indicates that the higher temperature (900 °C) RTA can enhance the growth of SiGe QDs. Two photoluminescence peaks are observed near 572 and 581 nm at room temperature. The mechanism of the luminescence from SiGe QDs is discussed.     

Immobilization of luminescent nanosilicon in a microfine polytetrafluoroethylene matrix by means of supercritical carbon dioxide

With the use of supercritical carbon dioxide (SC-CO₂), the matrix immobilization of photoluminescent silicon nanocrystals (nc-Si) in polytetrafluoroethylene microparticles (mp-PTFE) is performed, which leads to the formation of mp-PTFE/nc-Si photoluminescent nanocomposite containing ∼10³–10⁴ nc-Si particles per mp-PTFE particle (1–2 μm in size). This approach is based on the effect of polymer swelling in SC-CO₂, efficient SC-CO₂-assisted transport of nanoparticles into the internal free volume of the polymer, and contraction of the nanocomposite after the release of CO₂, an effect that prevents the subsequent agglutination of nanoparticles. Particles of nc-Si photoluminescent in the visible spectrum were synthesized from silicon suboxide powder (SiO _x , x ≈ 1) heated at various temperatures within 25–950°C and then etched in concentrated hydrofluoric acid. The hydrosilylation procedure was used to graft 1-octadecene molecules to the surface of nc-Si particles. As a result, the photoluminescence intensity of nc-Si increased substantially. According to TEM images and small angle X-ray scattering data, the maximum size of nc-Si particles did not exceed 5 nm and 7 nm, respectively, and the core of these nanoparticles consisted of crystalline silicon. The structure and spectral properties of the initial nc-Si particles and synthesized mp-PTFE/nc-Si photoluminescent nanocomposite microparticles were studied.     

Controlled fabrication of Si nanostructures by high vacuum electron beam annealing

Silicon nanostructures, called Si nanowhiskers, have been successfully synthesized on Si(1 0 0) substrate by high vacuum electron beam annealing (EBA). Detailed analysis of the Si nanowhisker morphology depending on annealing temperature, duration and the temperature gradients applied in the annealing cycle is presented. A correlation was found between the variation in annealing temperature and the nanowhisker height and density. Annealing at 935 °C for 0 s, the density of nanowhiskers is about 0.2 μm⁻² with average height of 2.4 nm grow on a surface area of 5×5 μm, whereas more than 500 nanowhiskers (density up to 28 μm⁻²) with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 °C for 0 s. At a cooling rate of −50 °C s⁻¹ during the annealing cycle, 10–12 nanowhiskers grew on a surface area of 5×5 μm, whereas close to 500 nanowhiskers grew on the same surface area for samples annealed at the cooling rate of −5 °C s⁻¹. An exponential dependence between the density of Si nanowhiskers and the cooling rate has been found. At 950 °C, the average height of Si nanowhiskers increased from 4.0 to 6.3 nm with an increase of annealing duration from 10 to 180 s. A linear dependence exists between the average height of Si nanowhiskers and annealing duration. Selected results are presented showing the possibility of controlling the density and the height of Si nanowhiskers for improved field emission properties by applying different annealing temperatures, durations and cooling rates.     

Visible photoluminescence of nanometer-sized SiGe/Si heterostructure fabricated by ion implantation

An innovative fabrication technique for the nanometer-sized SiGe/Si heterostructure was developed in this study. Ge was induced in Si substrate by two-step ion implantation. The spherical SiGe nanoclusters are self-assembled in the Si substrate by subsequent rapid thermal annealing at 1,100 °C. The diameter of the spherical SiGe nanoclusters is 5–7 nm. Visible photoluminescence from this nanometer-sized SiGe/Si heterostructure at room temperature was investigated. We found three peak energies of visible luminescence spectra at 1.97, 2.13, and 2.16 eV, respectively. The luminescence intensity depends on the number of the nanoclusters and will be decreased because of the micro-defects around the heterostructure, which is discussed in detail.     

Secondary defects in low-energy As-implanted Si

14 /cm² dose of As ions followed by both isochronal and isothermal annealing. The elementary defects generated first during solid-phase epitaxial recovery of implantation-induced amorphous layers at temperatures of 550 °C and/or 600 °C are {311} defects 2–3 nm long. They are considered to be transformed into {111} and {100} defects after annealing at temperatures higher than 750 °C. These secondary defects show the opposite annealing behavior to the dissolution and growth by the difference of their depth positions at 800 °C. This phenomenon is explained by the diffusion of self-interstitials contained in defects. With regard to the formation and dissolution of defects, there is no significant difference between the effects of rapid thermal annealing (950 °C for 10 s) and furnace annealing (800 °C for 10 min). Received: 14 November 1997/Accepted: 16 November 1997     

Deposition of high-ohmic oriented ZnO films on glass,Si, and PEDOT-PSS,PEDOT-PSS(PVA) substrates at low temperatures by DC-magnetron sputtering

Using the technique of DC-magnetron sputtering of zinc target in the temperature range from −30°C to 30°C, we have obtained high-ohmic ZnO films (1.1×10⁹, 2×10¹¹, 1.3×10⁶, and 10⁸ Ω cm) on the substrates of glass, Si, and composites based on poly(3, 4-etylendioxythiophene) doped with polystyrensulfonic acid (PEDOT-PSS), and flexible composites of PEDOT-PSS in polymer matrix of polyvinyl alcohol (PVA). Structural, optical, and electrophysical characteristics of ZnO films prepared on different substrates were studied. Films obtained in certain technological regime are on all substrates oriented along crystallographic direction (002) and have transmission coefficient of the order 80–90% in the range 400–1000 nm. The developed technology for fabrication of high-ohmic grain-oriented ZnO films at low substrate temperatures can be applied to creation of functional elements in acousto- and bioelectronics.     

Cadmium sulfide rod-bundle structures decorated with nanoparticles from an inorganic/organic composite

We report a new morphology of wurzite cadmium sulfide with nanoparticles decorated on rod-bundle structures, which were synthesized via calcinations of an inorganic/organic composite at 400 °C in air. The composite was hydrothermally synthesized at 180 °C using thioglycolic acid (TGA) and cadmium acetate as starting materials. The structure, composition, and morphology of the prepared material were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscope, FT-IR spectrometry, photoluminescence spectrometry, and UV–visible spectrometry. Results indicated that the composite could be defined as CdS _0.65/Cd–TGA_0.35. X-ray diffraction revealed that the annealed product is CdS with wurtizite phase. The diameter of the rod is about 150–400 nm and the length from the top to the bottom of the decorated nanoparticle is about 100 nm. The composite showed high intensity of photoluminescence with similar peak position, compared to that of wurtzite CdS, because of the structure defects.     

Dielectric properties of nano Si/C/N composite powder and nano SiC powder at high frequencies

The dielectric properties of nano Si/C/N composite powder and nano SiC powder at high frequencies have been studied. The nano Si/C/N composite powder and nano SiC powder were synthesized from hexamethyldisilazane ((Me₃Si)₂NH) (Me:CH₃) and SiH₄–C₂H₂, respectively, by a laser-induced gas-phase reaction. The complex permittivities of the nano Si/C/N composite powder and nano SiC powder were measured at a frequency range of 8.2–12.4 GHz. The real part (′) and imaginary part (″) of the complex permittivity, and dissipation factor (tg δ=″/′) of nano Si/C/N composite powder are much higher than those of nano SiC powder and bulk SiC, Si₃N₄, SiO₂, and Si, especially the tg δ. The promising features of nano Si/C/N composite powder would be due to more complicated Si, C, and N atomic chemical environment than in a mixture of pure SiC and Si₃N₄ phase. The charged defects and quasi-free electrons moved in response to the electric field, diffusion or polarization current resulted from the field propagation. Because there exists graphite in the nano Si/C/N composite powder, some charge carries are related to the sp³ dangling bonds (of silicon and carbon) and unsaturated sp² carbons. The high ″ and tg δ of nano Si/C/N composite powder were due to the dielectric relaxation. The nano Si/C/N composite powder would be a good candidate for electromagnetic interface shielding material.     

Nanosized IrO<Subscript>2</Subscript> electrocatalysts for oxygen evolution reaction in an SPE electrolyzer

Nanosized IrO₂ electrocatalysts (d ~ 7–9 nm) with specific surface area up to 100 m² g⁻¹ were synthesized and characterized for the oxygen evolution reaction in a solid polymer electrolyte (SPE) electrolyzer. The catalysts were prepared by a colloidal method in aqueous solution and a subsequent thermal treatment. An iridium hydroxide hydrate precursor was obtained at ~100 °C, which was, successively, calcined at different temperatures from 200 to 500 °C. The physico-chemical characterization was carried out by X-ray diffraction (XRD), thermogravimetry–differential scanning calorimetry (TG–DSC) and transmission electron microscopy (TEM). IrO₂ catalysts were sprayed onto a Nafion 115 membrane up to a loading of 3 mg cm⁻². A Pt catalyst was used at the cathode compartment with a loading of 0.6 mg cm⁻². The electrochemical activity for water electrolysis of the membrane-electrode assemblies (MEAs) was investigated in a single cell SPE electrolyzer by steady-state polarization curves, impedance spectroscopy and chrono-amperometric measurements. A maximum current density of 1.3 A cm⁻² was obtained at 1.8 V and 80 °C for the IrO₂ catalyst calcined at 400 °C for 1 h. A stable performance was recorded in single cell for this anode catalyst at 80 °C. The suitable catalytic activity and stability of the most performing catalyst were interpreted in terms of proper combination between nanostructure and suitable morphology.     

Simulation and measurement of AES depth profiles; a case study of the C/Ta/C/Si system

A multilayer sample (C (23.3 nm)/Ta (26.5 nm)/C (22.7 nm)/Si substrate) was submitted to AES depth profiling by Ar⁺ ions of energy 1 keV and angles of incidence of 72°, 78°, and 82°. The shapes of the as-measured depth profiles were strongly different emphasizing that the ion-bombardment conditions strongly affects the shapes of measured depth profiles. We simulated the depth profile measured at an angle of incidence of 72° by calculating the backscattering factor, applying attenuation lengths available in the literature, and simulating the ion-bombardment-induced specimen alteration with a TRIDYN simulation and a trial and error method. The good agreement between the calculated and measured depth profiles justified the method applied.     

Light-emitting Si nanostructures formed in silica layers by irradiation with swift heavy ions

Thin SiO₂ layers were implanted with 140 keV Si ions to a dose of 10¹⁷ cm⁻². The samples were irradiated with 130 Mev Xe ions in the dose range of 3×10¹²–10¹⁴ cm⁻², either directly after implantation or after pre-annealing to form the embedded Si nanocrystals. In the as-implanted layers HREM revealed after Xe irradiations the 3–4 nm-size dark spots, whose number and size grew with increase in Xe dose. A photoluminescence band at 660–680 nm was observed in the layers with the intensity dependent on the Xe dose. It was found that passivation with hydrogen quenched that band and promoted emission at ∼780 nm, typical of Si nanocrystals. In spectra of pre-annealed layers strong ∼780 nm peak was observed initially. Under Xe bombardment its intensity fell, with subsequent appearance and growth of 660–680 nm band. The obtained results are interpreted as the emission at ∼660–680 nm belonging to the imperfect Si nanocrystals. It is concluded that electronic losses of Xe ions are mainly responsible for formation of new Si nanostructures in ion tracks, whereas elastic losses mainly introduce radiation defects, which quench the luminescence. Changes in the spectra with growth of Xe ion dose are accounted for by the difference in the diameters of Xe ion tracks and their displacement cascades.     

Bioinspired Si subwavelength gratings by closely-packed silica nanospheres as etch masks for efficient antireflective surface

We experimentally investigate the antireflective properties of various silicon (Si) subwavelength grating (SWG) structures using closely-packed silica nanospheres monolayers with different sizes as etch masks and a subsequent inductively coupled plasma (ICP) etching, together with theoretical calculations based on a rigorous coupled wave analysis method. The geometric structure of Si SWGs is optimized by changing the size of nanospheres and ICP etching parameters. The antireflective properties depend strongly on the period, height, and shape of the hexagonally ordered SWG structures, especially correlated with ICP etching parameters. For an optimized Si SWG structure with a rounded cone shape, the reflectance is significantly reduced, indicating a low reflectance of <4.4% over a wide wavelength region of 300–1100 nm. From theoretical analysis, the reflectance of rounded cone-shaped Si SWG structures is minimized with a period of ∼300–350 nm and heights of >750 nm, which is reasonably consistent with the experimental results. The angle-dependent antireflection characteristics are also discussed.     

Microstructure and magnetic properties of Co(Cr)/Ti(Cr)/ZnO films prepared by laser ablation on Si substrates

High-quality Co(Cr)(50–66 nm)/Ti(Cr)(25–30 nm)/ZnO(165–225 nm) films were grown on Si substrates by the pulsed-laser deposition technique at 450–500°C. The microstructure of the films and their magnetic properties were investigated by X-ray diffraction, transmission electron microscopy and a vibrating sample magnetometer. It was found that the Co(Cr)/Ti(Cr)/ZnO thin films had a highly preferential c-axis direction normal to the surface of the substrate, and the ZnO sublayer had columnar structures in the growth direction. The interface of the multi-layer films is smooth without interface reaction. The as-produced films had in-plane easy magnetization. It indicates that the enhancements of the magnetic properties of the films are mainly ascribed to the grain structure and multi-domain state of the Co-alloy layer, which can be controlled by the ZnO sublayer.     

Change in the nature of the Ni diffusion mechanism on the Si(111) surface with adsorption of Co atoms

The diffusion of Ni on a Si (111) surface is investigated by LEED and Auger electron spectroscopy. It is found that, in contrast to the process on the initially clean Si (111)−7×7 surface, on Si (111) surfaces with submonolayer Co coverages the nature of the Ni transport mechanism changes at a temperature of about 750 °C, and the Ni surface diffusion coefficients increase sharply below this temperature. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 9, 611–614 (10 November 1997)     

Silica coating of Co–Pt alloy nanoparticles prepared in the presence of poly(vinylpyrrolidone)

This article describes a method for silica coating of Co–Pt alloy nanoparticles prepared in the presence of poly(vinylpyrrolidone) (PVP) as a stabilizer. The Co–Pt nanoparticles were prepared in an aqueous solution at 25–80 °C from CoCl₂ (3.0 × 10⁻⁴ M), H₂PtCl₆ (3.0 × 10⁻⁴ M), PVP (0–10 g/L), and NaBH₄ (4.8 × 10⁻³–2.4 × 10⁻² M). The silica coating was performed for the Co–Pt nanoparticle colloid containing the PVP ([Co] = [Pt] = 3.0 × 10⁻⁵ M) at 25 °C in (1/4) (v/v) water/ethanol solution with tetraethoxyorthosilicate (TEOS) (7.2 × 10⁻⁵–7.2 × 10⁻³ M) and ammonia (0.1–1.0 M). Silica particles, which had an average size of 43 nm and contained multiple cores of Co–Pt nanoparticles with a size of ca. 8 nm, were produced at 1.4 × 10⁻³ M TEOS and 0.5 M ammonia after the preparation of Co–Pt nanoparticles at 80 °C, 5 g/L PVP, and 2.4 × 10⁻² M NaBH₄. Their core particles were fcc Co–Pt alloy crystallites. Their saturation magnetization was 2.0-emu/g sample, and their coercive field was 12 Oe.     

Luminescent properties of YVO4:Eu/SiO2 core–shell composite particles

We report an efficient process for preparing monodisperse SiO₂@Y_0.95Eu_0.05VO₄ core–shell phosphors using a simple citrate sol–gel method and without the use of surface-coupling silane agents or large stabilizers. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and photoluminescence (PL) spectra were used to characterize the resulting SiO₂@Y_0.95Eu_0.05VO₄ core–shell phosphors. The XRD results demonstrate that the Y_0.95Eu_0.05VO₄ particles crystallization on the surface of SiO₂ annealing at 800 °C is perfectly and the crystallinity increases with raising the annealing temperature. The obtained core–shell phosphors have a near perfect spherical shape with narrow size distribution (average size ca. 500 nm and an average thickness of ~50 nm), are not agglomerated, and have a smooth surface. The thickness of the YVO₄:Eu³⁺ shells on the SiO₂ cores could be easily tailored by changing the mass ratio of shell to core (W = [YVO₄]/[SiO₂]) (~50 nm for W = 30%). The Eu³⁺ shows a strong PL luminescence (dominated by ⁵D₀ − ⁷F₂ red emission at 618 nm) under the excitation of 320 nm UV light. The PL intensity of Eu³⁺ increases with increasing the annealing temperature and the values of W.     

Hydrogenation effect on enhancement of photoluminescence of Er and Si nanocrystallites in Er-doped SiO2 synthesized by laser ablation

Significant enhancement of photoluminescence (PL) was attained for Er ions and Si nanocrystallites (nc-Si) in SiO₂ films by two kinds of hydrogenation, using H₂ molecules or H atoms. Er-doped SiO₂ films containing Er impurities and a high density of nc-Si were fabricated by laser ablation of Er films deposited on Si substrate in an O₂ gas atmosphere, followed by annealing at high temperatures in flowing Ar gas. Hydrogenation at 300–500 °C was found to effectively increase the PL intensity of Er ions as well as that of nc-Si. In particular, the hydrogen atom treatment dramatically shortens the hydrogenation time for the enhancement of Er PL compared to the hydrogen molecule treatment. Spectra of electron spin resonance showed a decrease in residual defects, namely, P_b-type defects located at the interfaces between nc-Si and SiO₂ by hydrogenation. These results clearly show the effectiveness of hydrogen passivation for Si nanostructures; i.e., the increase in the Er PL and nc-Si PL due to hydrogen passivation of the nonradiative recombination centers located at the interfaces between nc-Si and SiO₂. PACS 78.67.Bf; 71.20.Eh; 76.30.Mi; 81.15.Fg