Ferroelectric and dielectric behaviour of Bi0.92La0.08FeO3 multiferroic thin films prepared by soft chemistry route

Bi_0.92La_0.08FeO₃ (BLFO) thin films were grown on platine substrates by the soft chemical route. Ferroelectric and dielectric behaviors of BLFO films deposited by spin-coating technique and annealed at 773 K for 2 h in air atmosphere were explained. BLFO thin films obtained presents a rhombohedral structure. The BLFO films present dielectric and ferroelectric behaviors with dielectric permittivity and dielectric loss of approximately 81 and 0.0144 at 1 kHz. The Au/BLFO/Pt capacitor shows a hysteresis loop with remnant polarization of 20.6 μC/cm² and coercive field of 53.88 kV/cm. The polarization switching and the fatigue behavior of the BLFO films were significantly enhanced.     

Dielectric,ferroelectric and optical properties of BaZr<Subscript>0.2</Subscript>Ti<Subscript>0.8</Subscript>O<Subscript>3</Subscript> thin films prepared by sol–gel-hydrothermal process

BaZr_0.2Ti_0.8O₃ thin films on Pt/Ti/SiO₂/Si substrates have been fabricated under low temperature conditions by a sol–gel-hydrothermal technique. The dielectric constant is 247–83 in the frequency range of 1 kHz–1 MHz. The corresponding dielectric loss is ~10⁻². The capacitance–voltage curve shows strong non-linear dielectric behavior leading to a high tunability, up to ~30% at 1 kHz. The remanent polarization and coercive field at room temperature are measured to be ~1.5 μC/cm² and ~90 kV/cm. The infrared optical properties of the thin films are investigated using an infrared spectroscopic ellipsometry in the wave number range of 800–4,000 cm⁻¹. Optical constants of the thin films are simultaneously obtained.     

Electrical and Optical Properties of MgO Thin Film Prepared by Sol-Gel Technique

MgO thin films with either (111) or (200) preferential orientation have been prepared on (100) Si substrates by sol-gel method after a heat-treatment at 800°C. The obtained (111) preferentially oriented MgO film has a dielectric constant of 7.0 with a loss factor of 5% and a dielectric strength higher than 8 × 10⁵ V/cm. The optical refractive index, which depends on the film thickness, is 1.71 when the film thickness is 260 nm. The surface structure of the Si substrate is believed to affect the preferential orientation of the sol-gel derived MgO film. Specifically, the microstructures at the interface indicate an interdiffusion of Mg, O, and Si between the film and the substrate.     

Dielectric properties of oxydianiline‐based polyimide thin films according to the water uptake

For polyimide thin films, the dielectric properties were investigated with the capacitance and optical methods. The dielectric constants of the 4,4′‐oxydianiline (ODA)‐based polyimide thin films varied from 2.49 to 3.10 and were in the following decreasing order: 3,3′,4,4′‐biphenyltetracarboxylic dianhydride (BPDA)–ODA > 1,2,4,5‐benzenetetracarboxylic dianhydride (PMDA)–ODA > 4,4′‐hexafluoroisopropylidene diphthalic dianhydride (6FDA)–ODA. According to the absorption of water, the diffusion coefficients in the films varied from 4.8 × 10^?10 to 7.2 × 10^?10 cm²/s and were in the following increasing order: BPDA–ODA < PMDA–ODA < 6FDA–ODA. The dielectric constants and diffusion coefficients of the polyimides were affected by the morphological structures, including the molecular packing order. However, because of the water uptake, the changes in the dielectric constants in the polyimide thin films varied from 0.49 to 1.01 and were in the following increasing order: BPDA–ODA < 6FDA–ODA < PMDA–ODA. Surprisingly, 6FDA–ODA with bulky hexafluoroisopropylidene groups showed less of a change in its dielectric constant than PMDA–ODA. The total water uptake for the polyimide thin films varied from 1.43 to 3.19 wt % and was in the following increasing order: BPDA–ODA < 6FDA–ODA < PMDA–ODA. This means that the changes in the dielectric constants in the polyimide thin films were significantly related to the morphological structure and hydrophobicity of hexafluoroisopropylidene groups. Therefore, the morphological structure and chemical affinity in the polyimide thin films were important factors in controlling the dielectric properties. © 2002 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 40: 2190–2198, 2002     

Thermal diffusivity measurement of low-k dielectric thin film by temperature wave analysis

Thermal diffusivity of thin film with low dielectric constant (k), what is called low-k dielectric thin film, 0.31-1.14 μm, including hydrogen-silsesquioxane (HSQ), methyl-silsesquioxane (MSQ), and poly(arylen ether) was examined by temperature wave analysis. The phase shift of temperature wave was observable up to 100 kHz. Thermal diffusivity of HSQ was 4.7 × 10⁻⁷ m² s⁻¹, on the other hand it was not higher than 1.1 × 10⁻⁷ m² s⁻¹ for MSQ or poly(arylen ether) at room temperature. Temperature dependence of thermal diffusivity/thermal conductivity of MSQ was obtained, thermal diffusivity decreased but thermal conductivity increased in a heating scan at 30-150 °C. It was shown that the thermal diffusivity of low-k thin film was correlated with the chemical and the physical structures, the latter was formed in the spin-coating and the curing process.     

Third-Order Nonlinear Optical Properties and Dielectric Properties of Pb-Complex Perovskite Thin Films Prepared by Sol-Gel Method

The third-order nonlinear optical properties of the sol-gel derived Pb(Fe_1/2Nb_1/2)O₃-PbTiO₃ (PFN-PT) thin films have been investigated by the THG method. The χ⁽³⁾ values of PFN-PT thin films increased from 3.2×10⁻¹² esu (PT) to 8.5×10⁻¹² esu (PFN) with increasing content of Fe³⁺ ions which possessed very high second-hyperpolarizability, ψ(Fe_2/3O). It was experimentally confirmed that complex oxides such as ABO₃-type perovskites consisting of large non-transition metal A-site cations and small transition metal B-site cations exhibited high χ⁽³⁾ as expected from Lines' model. It was also found that the χ⁽³⁾ values of complex oxides could be estimated from the second-hyperpolarizabilities of the constituent single oxides reported so far. Because of the large remanent polarization, PT thin films may exhibit the highest χ⁽³⁾ among the ferroelectric PFN-PT thin films studied in the present work. The maximum dielectric constant, ε, of 1990 at room temperature was obtained for 0.5PFN·0.5PT thin films, whose composition corresponds to so-called morphotropic phase boundary (MPB).     

Substrate temperature influenced ZrO2 films for MOS devices

The effect of substrate temperature on the direct current magnetron-sputtered zirconium oxide (ZrO₂) dielectric films was investigated. Stoichiometric of the ZrO₂ thin films was obtained at an oxygen partial pressure of 4.0 × 10⁻² Pa. X-ray diffraction studies revealed that the crystallite size in the layer was increased from 4.8 to 16.1 nm with increase of substrate temperature from 303 to 673 K. Metal-oxide-semiconductor devices were fabricated on ZrO₂/Si stacks with Al gate electrode. The dielectric properties of ZrO₂ layer and interface quality at ZrO₂/Si were significantly influenced by the substrate temperature. The dielectric constant increased from 15 to 25, and the leakage current density decreased from 0.12 × 10⁻⁷ to 0.64 × 10⁻⁹ A cm⁻² with the increase of substrate temperature from 303 to 673 K.     

Enhanced ferroelectric,dielectric and leakage properties in Ce and Ti co-doping BiFeO3 thin films

Pure BiFeO₃ (BFO), Ce and Ti individual doping and co-doping BiFeO₃ thin films were fabricated via sol–gel process on Pt/Ti/SiO₂/Si substrates. The microstructure, surface morphology, ferroelectric and dielectric properties of BFO and doped thin films were investigated in detail. X-ray diffraction reveal that all thin films are confirmed the formation of the distorted rhombohedral perovskite structure. No impure phase is identified in all the films. The Ce and Ti co-doping BiFeO₃ (BCFTO) thin films exhibited the enhanced ferroelectricity with a large remnant polarization (2P _r) of 130 μC/cm², and low leakage current density of 9.10 × 10^?6 A/cm² which is more than two orders of magnitude lower than that of pure BFO films at 100 kV/cm. The dielectric constant (364 at 1 kHz) of the BCFTO thin films is much larger than that of pure BFO thin films. These results suggest that the introductions of Ce and Ti provides an effective route for improving the ferroelectric, dielectric and leakage properties of BFO thin films.     

PMMA-SiO<Subscript>2</Subscript> organic–inorganic hybrid films: determination of dielectric characteristics

Organic–inorganic hybrid thin films have been prepared by a modified sol–gel route using tetraethyl orthosilicate as the inorganic (silica) source, methyl methacrylate (MMA) as the organic source, and 3-trimetoxysilylpropyl methacrylate as the coupling agent. The films were prepared by spin coating on Si (100) p-type substrates and subsequently heat-treated at 90 °C. Fourier transform infrared results reveal a set of absorption bands associated with the formation of both PMMA and SiO₂ phases in the hybrid films. Capacitance–voltage (C–V) characterization was carried out on metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures, with the hybrid films as the insulator layer to evaluate the electrical properties. We present a detailed comparative analysis of the dielectric constant obtained from C–V characterization in the frequency range of 1 kHz–1 MHz. For the PMMA-SiO₂ hybrid material the dielectric constant values obtained were around 9.5 at 1 MHz which is superior to the values reported for thermally grown SiO₂ and pure PMMA materials. The interface state density for PMMA-SiO₂ on Si was approximately 10¹⁰ cm⁻², which is comparable to the standard SiO₂/Si structures. Due to the electrical behavior and low processing temperatures this hybrid dielectric is a very promising candidate for flexible electronic devices and its subsequent implementation does not require complex equipment.     

Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films

Pb_0.4Sr_0.6TiO₃ (PST) thin films doped with various concentration of Bi were prepared by a sol-gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x<0.15, only pure PST perovskite phase were in the thin films. For 0.2<x<0.4, the PST/Bi₂Ti₂O₇ biphase were obtained. The thin films with pure Bi₂Ti₂O₇ pyrochlore phase were obtained for x=0.67. The biphase thin films had high tunability and high figure of merit (FOM). The FOM of PST/Bi₂Ti₂O₇ biphase thin film was about 6 times higher than that thin films formed with pure perovskite phase or pure pyrochlore phase.     

Glycol-based sol-gel process for the fabrication of ferroelectric PZT thin films

A new sol-gel system using ethylene glycol was developed for the fabrication of PZT thin films with compositions near the morphotropic phase boundary Pb(Zr_0.52Ti_0.48)O₃. Ethylene glycol was used as both a chelating agent and a solvent to replace the highly toxic methoxyethanol used in previous formulations. Thin films were deposited by spin coating the solutions onto platinized silicon substrates. Films were completely crystallized by about 600°C and contained the ferroelectric perovskite phase. A dielectric constant of about 750–800 at 1 KHz was obtained for thin films of 0.3 µm thickness. The hysteresis measurements revealed a remanent polarization of 15 mC/cm² with a coercive field of 60 kV/cm.     

Structure and electrical properties of Pb(Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>)O<Subscript>3</Subscript> thin films on LaNiO<Subscript>3</Subscript>—Coated thermally oxidized Si substrates

Pb(Zr_0.25Ti_0.75)O₃ (PZT25) thin films were prepared on LaNiO₃-coated thermally oxidized silicon substrates by chemical solution deposition method, where LaNiO₃ electrodes were also prepared by a chemical solution deposition technique. The dielectric constant and dielectric loss of the PZT25 thin films were 570 and 0.057, respectively. The remanent polarization and coercive field were 20.11 μC/cm² and 60.7 kV/cm, respectively. The PZT25 thin films on LaNiO₃-coated thermally oxidized silicon substrates showed improved fatigue characteristics compared with their counterparts on plantium-coated silicon substrates.     

Microstructure and electrical properties of BaTiO<Subscript>3</Subscript> and (Ba,Sr)TiO<Subscript>3</Subscript> ferroelectric thin films on nickel electrodes

Nickel thin films have been sputtered on standard Si/SiO₂ substrates with TiO₂ as an adhesive layer. The thermal stability of these substrates was analyzed. SEM images show an increase in grain size with annealing temperature. They were found to be stable till 800°C, beyond which the nickel layer disintegrated. These substrates were used for deposition of BaTiO₃ and (Ba,Sr)TiO₃ dielectric thin films under a reducing atmosphere. The dielectric thin films were processed with various pyrolysis and annealing temperatures in order to optimize the dielectric properties. Increased pyrolysis temperatures showed an increase in the grain size. Results on these nickelised substrates were finally compared with dielectric films deposited on platinized silicon substrates under identical conditions but crystallized in an oxygen atmosphere.     

AC Electrical Properties of Plasma Polymerized <Emphasis Type="Italic">o</Emphasis>-Methoxyaniline Thin Films

Alternate current (ac) electrical properties of the plasma polymerized o-methoxyaniline (PPOMA) thin films synthesized in the glow discharge plasma using a capacitively coupled reactor are studied. Measurement revealed that the ac electrical conductivity varies with frequency ω as ω ⁿ , where the exponent n is less than unity in the range 0.1 to 2.0 kHz, indicating the Debye type conduction mechanism in the PPOMA thin films, while above this frequency range the exponent is become greater than unity indicating non-Debye type conduction. At low frequencies the conduction is considered to be due to hopping of carriers between the localized states. The PPOMA thin films of thicknesses 100?250 nm possesses dielectric constant <10, which remains static in the range 0.1?10 kHz, and decreases at higher temperature due to the orientation polarization. The dielectric loss increases with the increase in frequency having a peak around or above 10 kHz for all the PPOMA films of different thicknesses. Cole-Cole plot between the real and imaginary dielectric constant exhibits single relaxation mechanism in the PPOMA thin films.     

Curing of an epoxy resin modified with poly(methylmethacrylate) monitored by simultaneous dielectric/near infrared spectroscopies

Simultaneous dielectric and near infrared measurements have been performed in “real-time” to follow polymerisation reactions on blends of a diglycidyl ether of bisphenol-A epoxy resin with 4,4^′-diaminodiphenylmethane hardener and different amounts of poly(methylmethacrylate) as modifier. The effect of the modifier amount on the polymerisation reactions has been studied, as well as that of the curing temperature. Epoxy and amine conversions have been followed by near infrared spectroscopy (NIR), while changes in molecular mobility in the reaction mixture have been analysed by dielectric relaxation spectroscopy (DRS). Evolutions of ionic conductivity and α-relaxation have been analysed and vitrification times have been obtained. The relaxational behaviour has been analysed through curing in the frequency domain, being the change of the main relaxation indicative of the cure reaction advancement. DRS data are also presented as complex impedance Z(ω). Vitrification times, obtained by dielectrometry have been compared with those obtained by rheological measurements and gelation times obtained by NIR have been compared with those obtained by solvent extraction.     

Thermally curable organic/inorganic hybrid polymers as gate dielectrics for organic thin‐film transistors

New low‐temperature curable organic/inorganic hybrid polymers were designed and synthesized as gate dielectrics for organic thin‐film transistors (OTFTs). Allyl alcohols were introduced to polyhedral oligomeric silsesquioxane (POSS) via hydrosilyation to produce an alcohol‐functionalized POSS derivative (POSS‐OH). POSS‐OH was then reacted with hexamethoxymethylmelamine at carrying molar ratios at 80 °C in the presence of a catalytic amount of p‐toluenesulfonic acid to give highly cross‐linked network polymers (POSS‐MM). The prepared thin films were smooth and hard after the thermal cross‐linking reaction and had very low leakage currents (<10^?8 A/cm²) with no significant absorption over the visible spectral range. Pentacene‐based OTFTs using the synthesized insulators as gate dielectric layers had higher hole mobilities (up to 0.36 cm²/Vs) than a device using thermally cross‐linked poly(vinyl phenol) and melamine as the gate dielectric layer (0.18 cm²/Vs). © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 3260–3268     

Characterization of very low thermal conductivity thin films

Characterization of thermal transport in nanoscale thin films with very low thermal conductivity (<1 W m^?1 K^?1) is challenging due to the difficulties in accurately measuring spatial variations in temperature field as well as the heat losses. In this paper, we present a new experimental technique involving freestanding nanofabricated specimens that are anchored at the ends, while the entire chip is heated by a macroscopic heater. The unique aspect of this technique is to remove uncertainty in measurement of convective heat transfer, which can be of the same magnitude as through the specimen in a low conductivity material. Spatial mapping of temperature field as well as the natural convective heat transfer coefficient allows us to calculate the thermal conductivity of the specimen using an energy balance modeling approach. The technique is demonstrated on thermally grown silicon oxide and low dielectric constant carbon-doped oxide films. The thermal conductivity of 400 nm silicon dioxide films was found to be 1.2 W m^?1 K^?1, and is in good agreement with the literature. Experimental results for 200 nm thin low dielectric constant oxide films demonstrate that the model is also capable of accurately determining the thermal conductivity for materials with values <1 W m^?1 K^?1.     

All-organic polymer blend dielectrics of poly (arylene ether urea) and polyimide: Toward high energy density and high temperature applications

The development of high-performance dielectric films with high energy density and temperature stability is extremely desired for modern electronics and power systems. Herein, a simple and low-cost approach is proposed to fabricate all-organic blend films prepared from poly (arylene ether urea) (PEEU) and polyimide (PI) via solution casting and thermal imidization process. The incorporation of PEEU in PI matrix significantly improved dielectric breakdown strength and dielectric constant of PI. More precisely, blend film with 15 wt% PEEU exhibited highest energy density 5.14 J/cm³ at 495.65 MV/m, with enhanced dielectric constant of 4.73 and very low dissipation factor of 0.299%. Furthermore, the dielectric properties of the PEEU/PI blend displayed wonderful temperature stability in the range of − 50–+ 250°C, and great frequency stability between 10 and 10⁶ Hz. The blend film also exhibited excellent heat resistance and presented valuable potential in thin film capacitors for high voltage direct current system.     

From Synthesis to Applications: Copper Calcium Titanate (CCTO) and its Magnetic and Photocatalytic Properties

Investigations focusing on electrical energy storage capacitors especially the dielectric ceramic capacitors for high energy storage density are attracting more and more attention in the recent years. Ceramic capacitors possess a faster charge-discharge rate and improved mechanical and thermal properties compared with other energy storage devices such as batteries. The challenge is to obtain ceramic capacitors with outstanding mechanical, thermal and storage properties over large temperature and frequencies ranges. ABO₃ as a type of perovskites showed a strong piezoelectric, dielectric, pyroelectric, and electro-optic properties useful as energy storage and environmental devices. CaCu₃Ti₄O₁₂ (CCTO) perovskite with cubic lattice (Im3 symmetry) was discovered to have a colossal dielectric constant (10⁴) that is stable over a wide range of frequencies (10 Hz–1 MHz) and temperature independence (100–300 K). The origin of this high dielectric constant is not fully established, specially because it is the same for single crystal and thin films. In this review, the history of CCTO will be introduced. The synthesis and the sintering approaches, the dopant elements used as well as the applications of CCTO will be reported. In addition to dielectrical properties useful to energy storage devices; CCTO could serve as photocatalytic materials with a very good performance in visible light.     

Synthesis of highly regioregular poly[3‐(4‐alkoxyphenyl)‐thiophene]s by oxidative catalysis using copper complexes

A novel, easy, and cost‐effective synthetic procedure is reported for the production of very highly regioregular poly[3‐(4‐alkoxyphenyl)thiophene]s by means of oxidative coupling. Four copper complexes were synthesized and used as catalysts to obtain polymers with higher regioregularity compared to the previous oxidative coupling methodologies reported in the literature and similar to that obtained by McCullough and Rieke methods in the synthesis of poly‐3‐alkylthiophenes. The regioregularity of the synthesized polymers was investigated by UV–Visible characterization on polymer thin films and ¹H NMR analysis. The remarkable potentialities of these polymers have emerged from field‐effect transistor mobility measurements operated on devices with bottom‐contact configuration and hexamethyldisilazane‐treated SiO₂ gate dielectric, showing a well‐defined p‐type field‐effect response and maximum mobility values in air higher than 10^?4 cm² V^?1 s^?1. © 2013 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2013, 51, 4351–4360