Optical and electrical properties of copper-doped nano-crystallite CdO thin films

Thin films of Cu-doped CdO (CdO:Cu) with different Cu% content were prepared in high vacuum on glass and Si substrates. The samples were characterised X-ray diffraction (XRD), optical spectroscopy, scanning electron microscope (SEM), and dc-electrical measurements. The XRD study reveals the formation of single crystalline phase CdO:Cu of CdO structure with a preferential [111] orientation. However, with increasing of Cu% content, the crystal structure was gradually deteriorated. SEM study shows formation of granular structure with rice shape grains of average size ∼500 nm. The optical study shows that Cu doping increased the films transparency with a slight blueshift for the bandgap. The calculated optical constants for pure and Cu-doped CdO were analysed with Forouhi–Bloomer (FB), Wemple–Didomenico (WD), and Spitzer–Fan (SF) models. Good agreements were obtained between electrical and optical (through SF model) measurements. The electrical measurements show that the utmost enhancement in mobility (82.5 cm²/V s) and conductivity (1428.6 S/cm) was found with 2.3% Cu sample. The optoelectronic study was analysed through the available BGW and BGN models that show close theoretical to the experimental results. In general, the films of CdO prepared with light Cu doping have optical and electrical characteristics suitable for various applications in material sciences and optoelectronic devices.     

Preparation of nanostructure Ni doped CdO thin films by sol gel spin coating method

The nanostructure Ni-doped CdO films have been prepared by sol gel spin coating method. Atomic force microscopy results indicate that the CdO films are formed from the nanoparticles and the grain size is changed with nickel content. X-ray diffraction patterns of the films indicate that the undoped and Ni-doped CdO films have polycrystalline structure with a cubic sodium chloride structure, showing two main characteristic peaks assigned to the (111) and (200) planes. The optical band gap values of undoped and Ni-doped CdO films were determined by optical absorption method. The E_g values of the CdO films were found to be in the range of 2.26–2.60 eV. The E_g values of the CdO films increase with the content of Ni dopant (up to 6% Ni). It is evaluated that the optical band gap and grain size of the CdO film can be controlled by doping with nickel atoms.     

Preparation and characterization of nanorods Sb doped CdO films by sol–gel technique

Pure and antimony (Sb) doped CdO films were grown using sol–gel spin coating technique. The structural properties of the films were investigated using atomic force microscopy. The structure of CdO film is converted from microrods to nanorods with Sb dopant. The analysis of optical absorption revealed that optical bandgap of the films changes with doping. The optical bandgap for 0.1, 0.5, 1.0, and 2.0% Sb doped CdO was determined to be 2.28, 2.30, 2.56, and 2.42 eV, respectively. Other optical constants such as refractive index, extinction coefficient, and dielectric constants were calculated using the optical data. The refractive index dispersion of the films obeys the single oscillator model. The volume and surface energy loss functions were calculated and observed to increase with increase in the photon energy.     

Structural and optoelectrical properties of nanocrystalline Gd-doped CdO films prepared by sol gel method

Gd-doped CdO thin films with various Gd concentrations have been prepared on glass and Si wafer substrates using sol gel technique. The films were characterised by X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and dc-electrical measurements. XRF method was used to determine the %Gd content in the films while XRD was used to study the influence of Gd doping on the detailed crystalline structure. Experimental data indicate that Gd³⁺ doping with level of less than 2.4% slightly enlarge the CdO crystalline unit cell. The bandgap (E _g) of Gd-doped CdO suffers narrowing by about 13% due to a small (0.2%) doping level but with %Gd doping level larger than 2.4%, E _g becomes wider than that of undoped CdO. The electrical behaviours of the Gd-doped CdO films show that they are degenerate semiconductors. The 2% Gd-doped CdO film shows increase in its mobility by about 92%, conductivity by 320%, and carrier concentration by 127%, relative to undoped CdO film. From transparent-conducting-oxide point of view, the Gd doping of CdO by sol gel method is not effective. Finally, the absorption in the NIR spectral region was investigated to be due to the free electrons.     

Synthesis and characterization of tellurium-doped CdO nanoparticles thin films by sol–gel method

In this work, tellurium (Te) doped CdO nanoparticles thin films with different Te concentrations (1, 3, 5, 7 and 10 %) were prepared by sol–gel method. The effects of Te doping on the structural, morphological and optical properties of the CdO thin films were systematically studied. From X-ray diffraction spectra, it has seen that all of thin films were formed polycrystalline and cubic structure having (111), (200) and (311) orientations. The structure of CdO thin films with Te-dopant was formed the unstable CdTeO₃ monoclinic structure crystal plane ( $ {\bar{\text{1}}\text{22}} $ 1 ¯ 22 ), however, the intensity of this unstable peak of the crystalline phase decreased with the increase of Te-doping ratio. The strain in the structure is also studied by using Williamson-Hall method. From FE-SEM images, it has seen that particles have homogeneously distributed and well hold onto the substrate surface. Additionally, grain size increases from 27 to 121 nm with the increase of Te-doping ratio. Optical results indicate that 1 % Te-doped CdO thin film has the maximum transmittance of about 87 %, and the values of optical energy band gap increases from 2.50 to 2.64 eV with the increase of Te-doping ratio. These results make Te-doped CdO thin films an attractive candidate for thin film material applications.     

Optical properties of thermally evaporated 4-(4-nitrobenzalideneamino) antipyrine Schiff base thin films

4-(4-nitrobenzalideneamino) antipyrine (NBAA) have been synthesized by refluxed ethanolic solution of 4-aminoantipyrine and p-nitrobenzaldehyde for 4 h and characterized with various physico-chemical techniques. Thin films of NBAA have been prepared by the thermal deposition technique in a vacuum of 1.5 × 10⁻⁵ mbar onto optical flat glass substrates. X-ray diffraction patterns show amorphous nature for all NBAA thin films except UV irradiated thin film which shows amorphous nature with some crystallinity but with small amount. The optical constants of thermally deposited NBAA thin film were investigated in the wavelength range 200–2500 nm. The type of optical transition near the edge of the band gap is found to be indirect allowed transition. The effect of UV irradiation as well as the effect of annealing on the optical properties of NBAA thin films was investigated. The value of the energy gap for thin films under investigation is calculated and found to be 1.56 eV for as-deposited, 1.45 eV for annealed and 1.82 eV for UV irradiation.     

Dephosphatation under UV light of water by Ti-PILC with activation by secondary species (La,Se, and Rb)

Me/Ti-PILC catalysts (Me: La, Se, Rb) were prepared with 60% in weight of Ti-species and 3% in weight of Me-secondary species added under ultrasounds. All materials were characterized by XRF, XPS, XRD, BET, HR-TEM/EDS, FEG-SEM and UV-vis. Three kinds of Ti-oxide nanoparticles were identified: (1) Ti-pillars within the clay layers, (2) rutile nanoflowers, and (3) anatase. In UV-vis spectra, no significant change in the band-gap was observed. In La and Se samples, small variations of the anatase XRD lines are associated with cationic diffusion after deposition of secondary species and calcination. An O1s XPS-peak (533.5 eV) is attributed to oxygen vacancies generated by this diffusion. Phosphate photo-removal in water was studied using phosphoric acid solution (75.97 g L⁻¹). Dephosphatation is significantly improved in the presence of Me-species as La/Ti-PILC > Se/Ti-PILC > Rb/Ti-PILC > Ti-PILC. Partial dephosphatation by adsorption is possible in the dark but is strongly improved by UV irradiation. With a La catalyst and under UV irradiation, phosphates (6.6 × 10⁻³ mol L⁻¹) were recovered in less than 70 min. Therefore, Me/Ti-PILC have a great potential as photocatalysts for the treatment of wastewaters and the recovery of phosphates.     

Physical properties of suspension ZnO nanoparticles prepared by wet chemical method: Comparison study

In this work a suspension of Nano-crystalline of ZnO particle is prepared by wet chemical at different temperature and concentration. From FTIR spectral exhibit present of Zn–O bond which indicate to formation ZnO particles. While all suspension and nano films exhibit a high transmittance in visible region about 90% which falls sharply in the UV region. The particle size is measured by using effective mass approximation (EMA), which was approximation (1.7–1.96 nm), and the band gap changes from 3.95 to 4.52eV for nanoparticles in suspension, and change from 3.76 to 3.94 eV for nanoparticles in ZnO film, which is change as function of concentration, temperature and aging time. Hall Effect measurements for ZnO films exhibit n-type conductivity for films deposited with activation energy 0.742eV at high temperature and 0.178eV at low temperature which is different as prepared sample conditions. Also the nanoparticle suspension and nanoparticle film could be implemented as a filter with variable cut off (8.9 × 10¹⁴–1.28 × 10¹⁵) H_Z.     

An improved method for chemical bath deposition of ZnS thin films

ZnS thin films were prepared by an improved chemical bath deposition method, which the substrates were preheated before being mounted in the reaction solution. X-ray diffraction (XRD) and energy dispersive spectrometer (EDS) reveals that thin film ZnS has a cubic structure and the typical composition ratio of Zn/S is 52:48. Scanning electron microscopy (SEM) characterization shows that the surface of the sample is compact and uniform. The transmission spectrum indicates a good transmission characteristic with an average transmittance of 82.2% in the spectra range from 350 nm to 800 nm and the optical band gap is about 3.76 eV.     

Carbon modified (CM)-n-TiO2 thin films for efficient water splitting to H2 and O2 under xenon lamp light and natural sunlight illuminations

Visible light-active carbon modified n-type titanium oxide (CM-n-TiO₂) thin films were synthesized by both flame oxidation and a combination of spray pyrolysis and flame oxidation. An undoped reference sample was also synthesized in an electric oven for comparison. Photoresponse of CM-n-TiO₂ and n-TiO₂ was evaluated by measuring the rates of water splitting to hydrogen and oxygen, in terms of observed photocurrent densities. Under monochromatic illumination from a xenon lamp, the integrated photocurrent densities from 300 nm to wavelengths corresponding to band gaps were found to be 1.12, 7.7, and 12.7 mA cm⁻² for optimized oven-made n-TiO₂ (sample 1), flame-made (sample 2), and spray pyrolysis flame-made CM-n-TiO₂ (sample 3) thin films at 0.48, 0.24, and 0.215 V biases, respectively. The corresponding maximum photoconversion efficiencies for these thin films were 0.84%, 7.62%, and 12.89%, respectively. Under actual natural global AM 1.5 sunlight illumination of 1 sun, the photocurrent densities for water splitting were 0.85, 5.89, and 12.27 mA cm⁻² for samples 1, 2, and 3, respectively. These photocurrent densities generated the maximum photoconversion efficiencies of 0.67%, 5.63%, and 12.26% for samples 1, 2, and 3, respectively, under global sunlight illuminations. These values compared well with those found under monochromatic light illumination from the xenon lamp. The increasing efficiencies were found to be consistent with lowering of main band gap from 3.0 eV to 2.65 eV and the generation of mid-gap bands at 1.6 eV and 1.4 eV above the valence band for samples 2 and 3, respectively. Carbon contents were found to be 0.0, 17.60, and 23.23 atom% for samples 1, 2, and 3, respectively. Dedicated to the 85th birthday of John O’ M. Bockris.     

Structural and optical characterization of sol–gel derived boron doped Fe<Subscript>2</Subscript>O<Subscript>3</Subscript> nanostructured films

Pure and boron (B) doped iron oxide (Fe₂O₃) nanostructured thin films were prepared by sol–gel spin coating method. The effects of B (0.1, 0.2, 0.5 and 1 %) content on the crystallinity and morphological properties of Fe₂O₃ films were investigated by X-ray diffractometer and atomic force microscopy. X-ray diffraction patterns revealed that the Fe₂O₃ films have a rhombohedral crystalline phase of α-Fe₂O₃ phase (hematite) with nanostructure and their crystallite size (D) is changed from 27 ± 2 to 45 ± 5 nm with B dopant content. The minimum crystallite size value of 27 ± 2 nm was obtained for 0.2 % B doped Fe₂O₃ film. Carrying out UV–VIS absorption study for both doped and undoped films at room temperature, it was realized that allowed optical transitions may be direct or indirect transitions. The direct and indirect energy gap values for pure Fe₂O₃ were obtained to be 2.07 and 1.95 eV, respectively. The optical band gap value of the films was changed with 0.1 % B doping to reach 1.86 eV for direct band gap and 1.66 eV in case of indirect band gap.     

Enhanced photoluminescence properties of Gd (x-1) Sr x O: CdO nanocores and their study of optical,structural, and morphological characteristics

Synthesis of Gd doped Sr_x O: CdO (x = 1.4, 1.6, 1.8) nanostructures (NS) was achieved through the coprecipitation method by using CTAB (cetyl trimethyl ammonium bromide) with the purpose to investigate the effect of Gd doping on the optical, structural, morphological, and photoluminescence properties at room temperature. Mixed phase of tetragonal crystal structure verified via X-ray diffraction technique, no structural variation was observed except lattice distortion. Size of the crystallites (D), morphology studied by SEM (scanning electron microscopy) analysis, nanoparticles (NPs) crystalized roughly flake-like morphology with homogeneous particle distribution centered at ~ 78 nm, ~56 nm, ~65 nm, ~88 nm for pure and Gd _(x-1) doped Sr _xO: CdO nanostructure, respectively. Fourier transform infrared spectroscopic investigation (FTIR) revealed the presence of Gd–O–Gd, Cd–O, Sr–O, and OH peaks appeared at ~1321 cm ^?1, ~1550 cm ^?1, ~1400 cm ^?1–3300 cm ^?1 with small variation in vibration modes due to Gd doping. Optical absorptivity observed in the range of 325 nm–359 nm (redshifted) with absorption edges at 346 nm, 364 nm, and 380 nm for Gd _(x-1) doped Sr _xO: CdO nanostructure, respectively. This redshift on the bandgap was discussed in terms of new band levels below conduction band. The energy gap was calculated using Kubelka-Munk theory and was found to be in the range of 3.22 eV–2.61 eV. X-ray photoelectron spectroscopy (XPS) performed to determine chemical composition and binding energies of Gd 3d _3/2, Sr 3d _3/2, and Cd 3d _3/2, O1s, and C1s observed at 150.8 eV, 141.6 eV, 411.0 eV, 530.4 eV, and 285.6 eV indicating Gd⁺³ ion replaces Sr⁺² in all concentrations. Our results showed that Gd-doped Sr _xO: CdO nanoparticles exhibited enhanced photoluminescence (PL) properties in contrast to the pure Gd₂O₃ with Gd⁺³ randomly incorporated into crystal structure, probably in tetrahedral sites. The composition of Gd _0.6 doped Sr _x O: CdO NS exhibited photoluminescent emission spectra, peaks centered at 433 ± 3 nm, 449 ± 3 nm, and 469 ± 2 nm (λ _excitation = 318 nm) and for Gd _0.8 doped Sr _x O: CdO nanostructure showed broad emission peak at 412 ± 2 nm to 433 ± 2 nm (λ _excitation = 380 nm), which indicates a reduction in defects with an increase in Gd doping. The transitions can be ascertained with shielding of 4f shells of Gd ⁺³ ions by 6s, 5d shells by the interaction of other Gd ⁺³ ions.     

Investigation of molar concentration effect on structural,optical, electrical,and photovoltaic properties of spray‐coated Cu2O thin films

High quality copper oxide thin films were prepared by nebulizer spray pyrolysis technique using different concentrations of copper precursor solution. Concentration‐dependent structural, morphological, optical, and electrical properties of the prepared films are discussed. X‐ray diffraction studies done for the samples confirmed that the deposited films are in Cu₂O phase with polycrystalline cubic structure. Atomic force microscopy analysis revealed that all the films are composed of nano sheet shaped grains covering the substrate surface. Optical studies done on the samples showed band gap values 2.42, 2.31, and 2.02 eV for the solution concentration 0.01, 0.05, and 0.1 M, respectively. Photoluminescence spectral analysis showed the emission band at 620 nm confirming the formation of cuprous oxide. Electrical analysis of the films showed p‐type conductivity with a low resistivity 2.19 × 10² Ω.cm and high carrier concentration 16.76 × 10 ¹⁵ cm⁻³ for the molar concentration 0.1 M. In this work, Cu₂O/ZnO heterojunctions were also prepared, and solar cell properties were studied; they were found to show increased open circuit voltage and short circuit current for higher copper concentration.     

Fe-doped and Mn-doped titanium dioxide thin films

Thin films of TiO₂ doped with Fe and Mn were deposited on F-doped SnO₂-coated glass by spin coating. Dopant concentrations of 3–7 wt% (metal basis) were used. The structural, chemical, and optical characteristics of the films were investigated. Laser Raman microspectroscopy and glancing angle X-ray diffraction data showed that the films consisted of the anatase polymorph of TiO₂. X-ray photoelectron spectroscopy data indicated the presence of Fe³⁺, Mn⁴⁺, and Mn³⁺ in the doped films, as predicted by calculated thermodynamic stability diagrams, and the occurrence of atomic disorder and associated structural distortion. Ultraviolet–visible spectrophotometry data showed that the optical indirect band gap of the films decreased significantly with increasing dopant levels, from 3.36 eV (undoped) to 2.95 eV (7 wt% Fe) and 2.90 eV (7 wt% Mn). These improvements are attributed to single (Fe) or multiple (Mn) shallow electron/hole trapping sites associated with the dopant ions.     

Influence of Mn incorporation on the structural and optical properties of sol gel derived ZnO film

Undoped and manganese doped ZnO (ZnO:Mn) films were prepared by sol gel method using spin coating technique. The effect of Mn incorporation on the structural and optical properties of the ZnO film has been investigated. The crystalline structure and orientation of the films have been investigated by using their X-ray diffraction spectra. The films exhibit a polycrystalline structure. Mn incorporation led to substantial changes in the structural characteristics of the ZnO film. The scanning electron microscopy (SEM) images of the films showed that the surface morphology of the ZnO film was affected by the Mn incorporation. The transparency of the ZnO film decreased with the Mn incorporation. The optical band gap and Urbach energy values of the ZnO and ZnO:Mn films were found to be 3.22, 3.19 eV and 0.10, 0.23 eV, respectively. The optical constants of these films, such as refractive index, extinction coefficient and optical dielectric constants were determined using transmittance and reflectance spectra. The refractive index dispersion curve of the films obeys the single oscillator model with dispersion parameters. The oscillator energy, E _o , and dispersion energy, E _d, of the films were determined 5.30 and 16.26 eV for ZnO film and 5.80 and 12.14 eV for ZnO:Mn film, respectively.     

Effect of sol temperature on the structure,morphology, optical and photoluminescence properties of nanocrystalline zirconia thin films

Transparent nanocrystalline zirconia thin films were prepared by sol–gel dip coating technique using Zirconium oxychloride octahydrate as source material on quartz substrates, keeping the sol at room temperature (SET I) and 60 °C (SET II). X-ray diffraction (XRD) pattern shows the formation of mixed phase [tetragonal (T) + monoclinic (M)] in SET I and a pure tetragonal phase in SET II ZrO₂ thin films annealed at 400 °C. Phase transformation from tetragonal to monoclinic was achieved in SET II film annealed at 500 °C. Atomic force microscopy analysis reveals lower rms roughness and skewness in SET II film annealed at 500 °C indicating better optical quality. The transmittance spectra gives a higher average transmittance >85% (UV–VIS region) in SET II films. Optical spectra indicate that the ZrO₂ films contain direct—band transitions. The sub- band in the monoclinic ZrO₂ films introduced interstitial O⁻defect states above the top of the valance band. The energy bandgap increased (5.57–5.74 eV) in SET I films and decreased (5.74–5.62 eV) in SET II films, with annealing temperature. This is associated with the variations in grain sizes. Photoluminescence (PL) spectra give intense band at 384 and 396 nm in SET I and SET II films, respectively. A twofold increase in the PL intensity is observed in SET II film. The “Red” shift of SET I films and “Blue” shift of SET II films with annealing temperature, originates from the change of stress of the film due to lattice distortions.     

X-ray photoelectron spectroscopy study of neodymium niobate and tantalate precursors and thin films

Neodymium niobate NdNbO₄ (NNO) and tantalate NdTaO₄ (NTO) thin films (~100 nm) were prepared by sol-gel/spin-coating process on Al₂O₃ substrate with LaNbO₄/PbZrO₃ interlayer and annealing at 1000°C. Surface chemistry was investigated by X-ray photoelectron spectroscopy (XPS). The core-level XPS studies of sol-gel NNO and NTO were performed for the first time. The binding energy differences Δ(O―Nb) and Δ(O―Ta) were used to characterize average energies of Nb―O bonding in NNO (322.9 eV) and Ta―O bonding in NTO (504.2 eV). The XPS demonstrated single valence state of Nd (Nd³⁺) in precursors. Nd concentration (at. %) decreases from 22% in precursors to 7% in films considering the substrate contains C, Al, Si, Pb, and Zr elements (37%) at Nb or Ta (5%) and O (51%). The X-ray diffraction analyses verified formation of the monoclinic (M-NdNbO₄ or M′-NdTaO₄), orthorhombic (O-NdNbO₄) and tetragonal (T-NdTaO₄) phases in precursors and films. Single valence state of Nd³⁺ was confirmed in these films designed for the application in environmental electrolytic thin film devices.     

A novel nano‐size lanthanum metal–organic framework based on 5‐amino‐isophthalic acid and phenylenediamine: Photoluminescence study and sensing applications

In this paper, a novel lanthanum metal–organic framework La‐MOF was prepared via hydrothermal and reflux methods. The La‐MOF was achieved through the reaction of a 5‐amino‐isophthalic acid with 1, 2‐phenylenediamine and lanthanum chloride. The prepared La‐MOF structure was confirmed by XRD, mass spectrometry, IR, UV–Vis and elemental analysis, whereas the size, and morphology was examined by FE‐SEM/EDX and HR‐TEM. The results indicated that the La‐MOF prepared via both methods have the same structure and composition. Meanwhile, the MOF yield, reaction time, morphology, physiochemical and sensing properties were highly depended on the used preparation method. The photoluminescence (PL) study was carried out for the La‐MOF, and the results showed that La‐MOF exhibits strong emission at 558 nm after excitation at 369 nm. Moreover, the PL data indicating that the La‐MOF has highly selective sensing properties for iron (III) competing with different metal ions. The Stern‐Völmer graph shows a linear calibration curve which achieved over a concentration range 1.0–500 μM of Fe³⁺ with a correlation coefficient, detection, and quantitation limits 0.998, 1.35 μM and 4.08 μM, respectively. According to the remarkable quenching of the PL intensity of La‐MOF using various concentrations of Fe³⁺, it was successfully used as a sensor for Fe³⁺detecting in different water resources (pure and waste) samples. The quenching mechanism was studied and it has a dynamic type and due to efficient energy transfer between the La‐MOF and Fe³⁺.     

Preparation of CdO Thin Films by Annealing Cd2+‐Dithiol Self‐Assembled Films

Cadmium oxide thin films were prepared by annealing the alternating multilayer films of cadmium ion and 1, 6‐hexanedithiol at 1073 K, which were built up by using the layer‐by‐layer self‐assembly technique. The result of EDX confirms the formation of CdO. The CdO film has a high average transmittance over 90% in visible of the region. The mean surface roughness was measured by AFM to be 3.267 nm.     

Synthesis and characterization of chemically grown electrochromic tungsten oxide

Tungsten oxide thin films, which are cathodic coloration materials that are used in electrochromic devices, were prepared by a chemical growth method and their electrochromic properties were investigated. The thin films of WO₃ were deposited onto electrically conducting substrates: fluorine doped tin oxide coated glass (FTO) with sheet resistance of about 10 Ω/cm. Transparent, uniform and strongly adherent thin film samples of WO₃ were studied for their structural, morphological, optical and electrochromic properties. The XRD data confirmed the monoclinic crystal structure of WO₃ thin films. The direct band gap Eg for the films was found to be 2.95 eV which is good for electrochromic device application. The electrochromism of WO₃ thin film was evaluated in 0.5 M LiClO₄/propylene carbonate for Li⁺ intercalation. Electrochromic properties of WO₃ thin films were studied with the help of Cyclic Voltammetry (CV), Chronoamperometry (CA) and Chronocoulometry (CC) techniques.