Thickness dependence of the Curie temperature and critical concentration in diluted ferromagnetic thin films

A thickness-dependent critical concentration of an Ising ferromagnetic thin film is predicted. The calculated values of the Curie temperature are bounded by those known for diluted two- and three-dimensional ferromagnets.     

Thickness dependence of the phase transition temperature in Ag2Te thin films

Electrical resistance measurements of Ag₂Te thin films of different thicknesses, vacuum deposited on clean glass substrates held at room temperature in a vacuum of 5 × 10^?5 Torr, have been carried out from about 300 to 450 K. A semiconducting-to-metallic-phase transition, which takes place during heating, is indicated by a sharp change in the slope of the resistance-vs-temperature curve. For films of different thicknesses the phase transition is found to occur at different temperatures. The size-dependent phase transition is explained by taking into account the varying surface and intergrain surface (interface) energy contributions to the total energy of the stable phase as a function of thickness and the difference in specific surface and integrain surface energies of the two phases. An order of magnitude of the difference in the function of specific surface and interfacial energies of the two phases is also made.     

Thickness dependence of superconductivity for In/Mo thin films

We report on the superconducting characteristics of the Indium thin films on molybdenum under-layer as a function of the In film thickness. Our molybdenum under-layer with thickness of 50 Å does not cause the occurrence of superconductivity until 1.5 K and the sheet resistance has logarithmic temperature dependence observed in the present investigation. As thickness of In increased, the oscillation phenomenon of T_C was observed at early stage of deposition and the value of T_C is higher than the that for bulk of In. Furthermore, it is found that with increase of the In thickness, there are large differences of the strengths of the upper critical magnetic field H_C2(T), resistivity and T_C between films with thickness below and above 100 Å. On the other hand, the T_C decreases monotonously as sheet resistance increases, when the T_C is plotted against sheet resistance. To clarify the relation of superconducting characteristics and the surface structure of the films with different thickness, we have performed surface observation by atomic force microscope. As a result, we have found that the surface changes from homogeneous structure to inhomogeneous (or percolative) structure, when the thickness of in films pass through about 100 Å. Superconductivity of In/Mo films with relatively thick-inhomogeneous films cannot be explained in terms of the simple percolation theory. Therefore, we analysis the experimental data of H_C2(T) near T_C, using a extended Landau–Ginzburg model. It is found out that our In/Mo films must consider some factors; such as, grain size, the distance of grain space, and the strength of couplings between grains.     

Thickness dependence of photoluminescence-decay profiles of exciton-exciton scattering in ZnO thin films

We have investigated the photoluminescence (PL) dynamics of ZnO thin films under intense excitation conditions using an optical-Kerr-gating method. The PL bands originating from exciton-exciton scattering (P emission) and biexciton (M emission) have been observed at 10 K. The ultrashort gating time of 0.6 ps has enabled us to obtain precise information of the temporal profiles of the peak energies and the intensities of the P- and M-PL bands. We have found that the decay time of the P emission becomes longer with increasing film thickness, while that of the M emission is independent of the film thickness. Although the decay time of the P emission is an increasing function of the film thickness, the relation is not in proportion, which is contrary to the predicted proportionality based on a simple model of photon-like polariton propagation.     

Thickness dependence of temperature coefficient of resistance of MnBi films

In-situ measurements of the temperature coefficient of resistance of electron-beam evaporated MnBi films are reported for the thickness range 30–180 nm. The thickness dependence of the temperature coefficient of resistance curves are plotted for different weight ratios, annealing times and substrate temperatures. The temperature coefficient of resistance shows marked size effect, and is negative for lower thicknesses (<100nm) and positive for higher thicknesses. The experimental data is in good agreement with the Mayadas-Shatzkes theory. The thickness dependence of the Curie temperature also indicates marked size effect.     

Thickness dependence of the magnetic properties and magnetoimpedance effect in CoFeAlO thin films

The change of the magnetic properties and magnetoimpedance effect of Co–Fe–Al–O thin films with film thicknesses 50–1200 nm has been investigated. The coercivity and the anisotropy field changed strongly with increase of film thickness, while the saturation induction almost remained unchanged. The maximum value of GMI effect obtained about 33% for a film thickness of 1200 nm.     

Thickness and angular dependence of the L‐edge X‐ray absorption of nickel thin films

We report on the near‐edge X‐ray absorption fine structure spectroscopy of the L₃ (2p_3/2) and L₂ (2p_1/2) edges for ferromagnetic pure nickel transition metal and show that the L_2,3 edge peak intensity and satellite feature at ~6 eV above the L₃ edge in nickel increase with increasing nickel film thickness both in the total electron yield and transmission modes. The absorption spectra of nickel metal, however, exhibit strong angular‐dependent effects when measured in total electron yield mode. In addition, we calculated the mean electron escape depth of the emitted electrons (λ_e), which was found for pure nickel metal to be λ_e=25 ± 2 Å. We point out the advantages of the total electron yield technique for the study of the L‐edge of 3d transition metals. Copyright © 2011 John Wiley & Sons, Ltd.     

Thickness dependence of the structural and electrical properties of ZnO thermal-evaporated thin films

ZnO thin films of different thicknesses were prepared by thermal evaporation on glass substrates at room temperature. Deposition process was carried out in a vapour pressure of about 5.54 × 10^− 5 mbar. The substrate–target distance was kept constant during the process. By XRD and AFM techniques the microstructural characteristics and their changes with variation in thickness were studied. Electrical resistivity and conductivity of samples vs. temperature were investigated by four-probe method. It was shown that an increase in thickness causes a decrease in activation energy.     

Thickness dependence of temperature coefficient of resistivity of polycrystalline bismuth films

Results for the temperature coefficient of resistivity (TCR) of polycrystalline bismuth films deposited on to glass substrate are reported for the thickness range 30–300 nm. The film TCR is found to be negative for all thicknesses studied and its absolute value exhibits a maximum of 3.70×10^–3 K^–1 near 72.5 nm. The variation of charge carrier density with film thickness has been estimated from the presence of surface states. To include the thickness dependence of charge carrier density, a modified theory has been used to explain the observed behaviour of the TCR. The experimental results for the TCR of Bi films are found to be consistent with the theoretical values. The existence of the extremum is theoretically verified. From the analysis, the specularity parameter p is about 0.44 and the reflection coefficient R is 0.1.     

Thickness and temperature dependence of the dynamic magnetic behavior in disordered FePt films

We present in this work an investigation of the magnetic behavior of FePt films as a function of film thickness and thermal treatment. The films have been sputter-deposited on oxidized Si (1 0 0) crystals and are ferromagnetic at room temperature. Using ferromagnetic resonance techniques at 9.5 GHz we have studied a series of four films with a thickness in the range . The resonance spectra of these films were measured at and also above room temperature. The high temperature measurements produce irreversible changes in the samples which depend on the maximum temperature reached during the experiment. For relatively low measuring temperatures () the magnetic properties are generally improved, probably due to the release of stress formed during film fabrication. For larger temperatures () the absorption linewidth gradually broadens and the line could be hardly observed at room temperature if the measuring temperature exceeded . This behavior is due to the partial transformation of the metastable FCC phase to the ordered L1₀ high anisotropy phase. These data are consistent with the results found in samples annealed outside the resonant cavity.     

Second harmonic generation in α-Si:H thin films: Thickness dependence

The second harmonic generation (SHG) technique has been applied to investigate the nonlinear optical properties of thin films of hydrogenated amorphous silicon on a glass substrate. SHG measurements have been performed in two transmission experimental schemes. Modeling of a film as a three-layer structure and considering the interference and absorption at the SH wavelength have been carried out. The dependence of the nonlinear susceptibility on the film thickness was used to separate the bulk electric dipole contribution.     

Thickness dependence of the dynamics in thin films of isotactic poly (methylmethacrylate)

The film thickness dependence of both the glass transition temperature (T(g)) and the 1 kHz alpha relaxation were studied for thin films of isotactic Poly (methylmethacrylate) (i-PMMA) supported on aluminium substrates. Films in the thickness range 7-200 nm were studied. The ellipsometrically determined T(g) was found to show reductions for films thinner than 60 nm, with the largest observed reduction being 12 K for a 7 nm thick film. Measurements of the T(g) were also performed on i-PMMA films supported on silicon substrates. Dielectric studies of the temperature dependent 1 kHz alpha relaxation peak, showed that the position (T(alpha)) and shape of the peak have no film thickness dependence. This was shown to hold for films with one free surface and films with a 30 nm thermally evaporated capping layer. Capping the films was shown to have no effect on the thickness dependence of either T(g) or T(alpha). The implications of these results are discussed further and the different film thickness dependencies of T(g) and T(alpha) are discussed. This is done within the framework of the Vogel-Fulcher-Tamann (VFT) theory of glass forming materials and also in the context of the existence of a dynamic correlation length xi.     

Thickness dependence of X-ray absorption and photoemission in Fe thin films on Si(0 0 1)

To investigate the initial growth of Fe films on Si(0 0 1) and the Fe/Si interface, Fe films at various thicknesses have been systematically studied by soft X-ray absorption spectroscopy (XAS) and X-ray photoemission spectroscopy (XPS). The Fe L edge XAS spectrum shows a strong thickness dependence with broader line-width for thinner films. Detailed analysis of the Fe absorption signal as a function of the thickness shows that the broad linewidth of Fe L edge XAS spectra is mostly contributed by the first Fe layer at the Fe/Si interface. In contrast to XAS, Fe 2p photoemission spectra for these films are identical. However, valence band photoemission also shows a strong thickness dependence. Comparing the valence band photoemission spectra of the thin Fe/Si(0 0 1) films with that of pure Si and the thickest Fe film, the difference spectra at all thicknesses show almost identical shape indicating the same origin: the Fe/Si interface. Thus, it is mainly the first Fe layer at Fe/Si layer that is reactive with the Si substrate changing its electronic structure.     

Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

Undoped ZnO thin films of different thicknesses were prepared by r.f. sputtering in order to study the thickness effect upon their structural, morphological, electrical and optical properties. The results suggest that the film thickness seems to have no clear effect upon the orientation of the grains growth. Indeed, the analysis with X-ray diffraction show that the grains were always oriented according to the c(0 0 2)-axis perpendicular to substrate surface whatever the thickness is. However, the grain size was influenced enough by this parameter. An increase in the grain size versus the thickness was noted. For the electrical properties, measurements revealed behaviour very dependent upon thickness. The resistivity decreased from 25 to 1.5×10⁻³ Ω cm and the mobility increased from 2 to 37 cm² V⁻¹ s⁻¹ when the thickness increased from 70 to 1800 nm while the carrier concentration seems to be less affected by the film thickness and varied slightly remaining around 10²⁰ cm⁻³. Nevertheless, a tendency to a decrease was noticed. This behaviour in electrical properties was explained by the crystallinity and the grain size evolution. The optical measurements showed that all the samples have a strong transmission higher than 80% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the thickness increased. This result shows that the band gap is slightly decreases from 3.37 to 3.32 eV with the film thickness vary from 0.32 to 0.88 μm.     

Thickness dependence of the dynamics in thin films of isotactic poly (methylmethacrylate)

The European Physical Journal E - The film thickness dependence of both the glass transition temperature (T g ) and the 1 kHz alpha relaxation were studied for thin films of isotactic Poly...     

Optical absorption in polycrystalline thin films of magnetite at room temperature

Polycrystalline thin films of magnetite have been prepared to allow the measure of their absorption coefficient. Results are dealt with the hopping small polarons scheme. The case of free carriers is also considered.     

Anomalous temperature dependence of the Casimir force for thin metal films

Within the framework of the Drude dispersive model, we predict an unusual nonmonotonic temperature dependence of the Casimir force for thin metal films. For certain conditions, this force decreases with temperature due to the decrease of the metallic conductivity, whereas the force increases at high temperatures due to the increase of the thermal radiation pressure. We consider the attraction of a film to: either (i) a bulk ideal metal with a planar boundary, or (ii) a bulk metal sphere (lens). The experimental observation of the predicted decreasing temperature dependence of the Casimir force can put an end to the long-standing discussion on the role of the electron relaxation in the Casimir effect.     

Thickness dependence of the soft ferroelectric mode in SrTiO3 thin films deposited on MgO

We have measured the complex dielectric constants of SrTiO₃ thin films deposited on MgO substrate, by using the broadband terahertz time-domain spectroscopy. The dielectric dispersion of SrTiO₃ thin films with thickness of 1046, 460 and 55 nm has been observed in the frequency range from 0.1 to 8 THz. The dispersion mainly consists of the TO1 ferroelectric soft mode with a slight absorption of the TO2 phonon mode. From the analysis of the obtained dispersion, we found that the soft mode frequency hardens as the thickness of the film becomes thinner, and is extremely large compared with the bulk crystals. The damping of the soft mode is also larger than that of bulk SrTiO₃, which suggests the extrinsic nature of the broadening of the soft mode dispersion. In the thinnest film of 55 nm, even the shape of the dielectric dispersion changes, which may be related to integrated defects near the interface.