Wavelength-independent all-optical synchronization of a Q-switched 100-ps microchip laser to a femtosecond laser reference source

We present a Q-switched microchip laser emitting 1064-nm pulses as short as 100 ps synchronized to a cavity dumped femtosecond laser emitting 800-nm pulses as short as 80 fs. The synchronization is achieved by presaturating the saturable absorber of the microchip laser with femtosecond pulses even though both lasers emit at widely separated wavelengths. The mean timing jitter is 40 ps and thus considerably shorter than the pulse duration of the microchip laser.     

Formation of colorized silicon by femtosecond laser pulses in?different background gases

A single-crystal silicon(111) wafer surface fixed on an x–y translation stage is scanned with a focused femtosecond laser beam at a wavelength of 800 nm under different atmospheres (air, vacuum, and nitrogen). Different colors from different angles on the surface of the silicon then appear. From the result of the experiments, periodic ripple surface structures emerge on the surface of colorized silicon, and the phenomenon is more obvious in vacuum and nitrogen than in air. The periods of the surface structures on silicon are not the same in the different atmospheres. Under vacuum, the period is the longest and is closer to the wavelength of the laser irradiation. Different from metals, the range of energy density is smaller when the colorized silicon appears with femtosecond laser pulses. Through SEM, TEM, and AFM, we observe in detail the microstructures of colorized silicon that forms in air, vacuum, and nitrogen and analyze the possible physical mechanism. Finally, research into the optical reflection of the colorized silicon indicates that the reflectivity is not higher than 30% in the 250–800 nm range.     

Self-organized periodic surface structures on ZnO induced by femtosecond laser

Self-organized periodic surface structures on ZnO have been observed after multiple linearly polarized femtosecond laser pulse irradiation. The observed self-organized structures are attributed to the second harmonics in the sample surface excited by the incident laser. The grating orientation could be adjusted by the laser polarization direction. We also find that fluences play an important role in the formation of self-organized nanostructures.     

Surface modulation of silicon surface by excimer laser at laser fluence below ablation threshold

Controlled single step fabrication of silicon conical surface modulations on [311] silicon surface is reported utilizing KrF excimer laser [λ=248 nm] at laser fluence below ablation threshold laser fluence. When laser fluence was increased gradually from 0 to 0.2 J/cm² for fixed 200 numbers of shots; first nanopores are observed to form at 0.1 J/cm², then very shallow nanocones evolve as a function of laser fluence. At 0.2 J/cm², nanoparticles are observed to form. Up to 0.15 J/cm² the very shallow nanocone volume is smaller but increases at a fast rate with laser fluence thereafter. It is observed that the net material volume before and after the laser irradiation remains the same, a sign of the melting and resolidification without any ablation.     

X-ray diffraction from the ripple structures created by femtosecond laser pulses

In this paper, we present the investigation and characterization of the laser-induced surface structure on an asymmetrically cut InSb crystal. We describe diffraction from the ripple surface and present a theoretical model that can be used to simulate X-ray energy scans. The asymmetrically cut InSb sample was irradiated with short-pulse radiation centred at 800 nm, with fluences ranging from 10 to 80 mJ/cm². The irradiated sample surface profile was investigated using optical and atomic force microscopy. We have investigated how laser-induced ripples influence the possibility of studying repetitive melting of solids using X-ray diffraction. The main effects arise from variations in local asymmetry angles, which reduce the attenuation length and increase the X-ray diffraction efficiency.     

Structural changes induced on strontium barium niobate glass by femtosecond laser irradiation

Localized modification of the optical properties of erbium doped strontium barium niobate (SBN) glass has been performed using femtosecond laser irradiation. The samples, with composition SrO–BaO–Nb₂O₅–B₂O₅ and doped with 5%mol of Er³⁺, were fabricated using a melt-quenching method. The samples were irradiated with different number of pulses per spot (1–50 pulses) at two different laser fluences (2.6 and 5.6 J/cm²) by using an fs laser amplifier operating at 800 nm and generating pulses with a duration of 120 fs. Micro-luminescent microscopy, using an Ar⁺ laser as excitation source, has been used to analyze the modifications of the luminescent properties of the sample upon fs laser exposure. The emissions of the Er³⁺: ⁴I_11/2→⁴I_15/2 and ⁴I_13/2→⁴I_15/2 transitions allow appreciating the structural modifications caused by femtosecond laser exposure. The lifetimes of the levels involved in these transitions were measured inside and outside the laser irradiated region. These measurements have been compared with those obtained in bulk glass ceramic sample, which is obtained from the glass precursor by a thermal treatment in order to estimate the optimal conditions to produce nanocrystals in a localized region by ultrafast laser irradiation.     

Fabrication of micro/nano crystalline ITO structures by femtosecond laser pulses

A method is proposed for the fabrication of micro/nano crystalline indium tin oxide (c-ITO) structures using a Ti:Sapphire laser with a repetition rate of 1 kHz and a wavelength of 800 nm. In the proposed approach, an amorphous ITO (a-ITO) thin film is transformed into a c-ITO micro/nano structure over a predetermined area via laser beam irradiation, and the residual a-ITO thin film is then removed using an etchant solution. The fabricated c-ITO structures are observed using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM). The observation results show that the use of a low repetition rate laser induces a high thermal cycling effect within the ITO film and therefore prompts the formation of micro-cracks in the c-ITO structure. In addition, it is shown that as the laser power approaches the ablation threshold of the a-ITO thin film, nanogratings and disordered nanostructures are formed along the center lines of the c-ITO patterns formed using linearly polarized and circularly polarized laser beam irradiation, respectively. The nanogratings are found to have a period of approximately 200 nm (i.e. one-quarter of the irradiation wavelength), while the nanostructures have an average diameter of approximately 100–160 nm.     

Fabrication of microlens arrays in photosensitive glass by femtosecond laser direct writing

This article reports the fabrication of high-fill-factor plano-convex cylindrical and spherical microlens arrays horizontally and vertically embedded in a photosensitive Foturan glass chip by femtosecond (fs) laser micromachining. The microlens arrays were fabricated by modifying the microstructure of Foturan glass using fs laser direct writing followed by thermal treatment, wet etching, and additional annealing. The focusing ability and image quality of the microlens arrays were examined, showing that the lens arrays not only can focus light well but also provide an imaging capability that holds great potential for lab-on-a-chip applications.     

Volume structuring of high power LED encapsulates by femtosecond laser direct writing

We report on the micro-fabrication of diffractive optical elements (DOEs) such as 1D, 2D and concentric grating structures inside the volume of thin silicone films by femtosecond laser direct writing. In addition, we show that such structures can also be integrated into silicone films that act as encapsulation layers of high power light-emitting diodes. The latter strategy opens new possibilities to homogenize and to control the light emitted from such devices.     

Discharge instability induced by external laser preionization of a XeF discharge laser

External-laser-induced preionization of excimer lasers was investigated. A discharge XeF laser was preionized by two different UV lasers [a KrF laser (λ=249 nm) and an ArF laser (λ=193 nm)], and the improvements in performance of the XeF laser were compared. The XeF laser beam profiles were measured by an intensified CCD (ICCD) camera with temporal resolution of 10 ns. Striated XeF laser profiles were obtained with 249 nm laser preionization, whereas there was no striation in the profiles for 193 nm laser preionization. These striations originated from discharge in the XeF laser induced by laser preionization. The influence of excited rare-gas atoms on the discharge instability was examined.     

Formation of absorbing heterogeneous plasma layer by femtosecond laser-induced melting and ablation of silicon

The experimental study of absorption in silicon in infrared and visible spectral ranges, where the photon energy is less or more than the bandgap width, is performed by means of the ultrafast interferometry technique. The exactly solvable model in the electromagnetic of heterogeneous lossy plasma layer was developed. The density of carriers, their frequency of collisions, absorbing depth of the probing waves, real and imaginary parts of dielectric function of nonuniform layer and their spatial gradients are determined from the reflectance data by means of this model subject to the pump fluence. The heterogeneity-induced effects are visualized due to comparison of obtained plasma parameters with those calculated in the framework of homogeneous plasma model It is shown that in the intensity range near thresholds of melting and ablation the absorption, occurring in both cases mainly within a thin (∼10 nm) absorbing layer (similarly to metals), is due to free carrier intraband absorption.     

Heterogeneous integration of InGaAsP microdisk laser on a silicon platform using optofluidic assembly

Heterogeneous integration of InGaAsP microdisk lasers on a silicon platform is demonstrated experimentally using an optofluidic assembly technique. The 200-nm-thick, 5- and 10-μm-diameter microdisk lasers are fabricated on InP and then released from the substrates. They are reassembled on a silicon platform using lateral-field optoelectronic tweezers (LOET). The assembled laser with 5-μm diameter exhibits a threshold pump power of 340 μW at room temperature under pulse condition. The heterogeneously-integrated InGaAsP-on-Si microdisk laser could provide the much needed optical source for CMOS-based silicon photonics. The small footprint and low power consumption make them attractive for optical interconnect applications. The optofluidic assembly technique enables efficient use of the III–V epitaxial materials in silicon photonic integrated circuits.     

Threshold fluence for domain reversal directly induced by femtosecond laser in lithium niobate

Fabricating domain reversal directly induced by femtosecond laser is a novel and promising method to induce micron-period or even submicron-period inverted domain structure for it averts the domain spreading and mergence which is hard to avoid by traditional electric-field poling method. In this paper, the domain reversal process in lithium niobate crystal by irradiation of femtosecond pulses whose spatial and temporal distributions are taken into consideration is numerically simulated in the framework of Fahy’s model. The simulation results manifest the domain inversion window theory and predict the threshold reversal fluence. The experiment to form domain reversal via direct illumination with femtosecond laser in Y-cut lithium niobate samples was conducted at room temperature. The multi-ring-like structures on the processed samples tally with the inversion window theory and the calculated threshold reversal fluence is well within the scope obtained by simulation, which serves as a corroborative evidence to prove the domain reversals can be formed by direct irradiation with femtosecond laser in lithium niobate.     

In-situ bioconjugation in stationary media and in liquid flow by femtosecond laser ablation

In-situ functionalization of gold nanoparticles with fluorophore-tagged oligonucleotides is studied by comparing femtosecond laser ablation in stationary liquid and in biomolecule flow. Femtosecond laser pulses induce significant degradation to sensitive biomolecules when ablating gold in a stationary solution of oligonucleotides. Contrary, in-situ conjugation of nanoparticles in biomolecule flow considerably reduces the degree of degradation studied by gel electrophoresis and UV–Vis spectrometry. Ablating gold with 100 μJ femtosecond laser pulses DNA sequence does not degrade, while the degree of fluorophore tag degradation was 84% in stationary solution compared to 5% for 1 mL/min liquid flow. It is concluded that femtosecond laser-induced degradation of biomolecules is triggered by absorption of nanoparticle conjugates suspended in the colloid and not by ablation of the target. Quenching of nanoparticle size appears from 0.5 μM biomolecule concentration for 0.3 μg/s nanoparticle productivity indicating the successful surface functionalization. Finally, increasing the liquid flow rate from stationary to 450 mL/min enhances nanoparticle productivity from 0.2 μg/s to 1.5 μg/s, as increasing liquid flow allows removal of light absorbing nanoparticles from the ablation zone, avoiding attenuation of subsequent laser photons.     

Nd:YAG waveguide laser with 1.3 W output power, fabricated by direct femtosecond laser writing

Tracks of modified material were written with femtosecond-laser pulses in neodymium-doped YAG crystals. Due to a stress-induced change of the refractive index, waveguiding beside the tracks and between two adjacent tracks with a distance of approximately 25 μm was observed. Loss measurements resulted in guiding losses of about 1.6 dB/cm for the double track waveguide. Spectroscopic investigations of the ⁴ F _3/2→⁴ F _11/2 transmission lines of the neodymium ions, which are close to the modified region, revealed a small stress-induced red shift of the lines. Laser oscillation of single-track waveguides and double-track waveguides was demonstrated with Ti:Sapphire laser pumping at a wavelength of 808 nm. Best laser performance with about 1.3 W output power at 2.25 W launched pump power was achieved using a double-track waveguide with a separation of 27 μm at an outcoupling transmission of 95%.     

Multi-pulse operation of a Kerr-lens mode-locked femtosecond laser

Our experimental results show that the presence of a proper amount of negative group velocity dispersion is essential to multi-pulse operation of a Kerr-lens mode-locked femtosecond laser.We demonstrate that the pulse separations and the number of pulses contained within a cavity round trip are strongly dependent on the initial perturbations.The results allow us to get a better understanding on the influences of the convoluted self-phase modulation and intra-cavity dispersions on the stable multi-pulse oscillation in a Kerr-lens mode-locked femtosecond laser.     

The dissociative ionization and Coulomb explosion of ethane by a femtosecond laser field

Femtosecond laser-induced dissociation and Coulomb explosion of polyatomic molecule C_2H_6 were systematically investigated using a time-of-flight mass spectrometer and a chirped pulse amplifier laser. With the laser intensity varying from 2.4×10^{15}W/cm^{2} to 1.2×10^{16}W/cm^2, strong molecular ions C_2H_n^+ (n=0－6) and atomic ions C^{m+} (m=1－3) signals were observed. The double-peak structure of atomic ions indicated the occurrence of Coulomb explosion. Compared with the nearly isotropic distribution of C^{+}, highly charged ions C^{m+} (m=2－3) exhibited a sharply anisotropic angular distribution, which was attributed to the geometric alignment.     

Parallel ripple formation during femtosecond laser grooving of ceramic

The self-organized formation of ripples in the direction parallel to the groove during the femtosecond laser machining of microgrooves on aluminum nitride ceramic at laser fluences much higher than the single-pulse ablation threshold is reported. These parallel ripples are notably different from the commonly observed polarization-perpendicular ripples and are produced in grooves having an appropriate width and depth, irrespective of laser polarization. From subsequent experiments with narrow and wide groove widths, it could be considered that the groove walls play an important role in the formation of these parallel ripples, possibly by confining the laser-induced plasma.     

3 GHz, fundamentally mode-locked, femtosecond Yb-fiber laser

We demonstrate a fundamentally mode-locked Yb-fiber laser with 3?GHz repetition rate and ～206 fs pulse duration. The laser incorporates two enabling technologies: a 1?cm heavily Yb-doped phosphate glass fiber as the gain medium and a high-dispersion (-1300 fs²) output coupler to manage cavity dispersion. The oscillator self-starts and generates up to 53?mW average power.     

Aging effect on blue luminescent silicon nanocrystals prepared by pulsed laser ablation of silicon wafer in de-ionized water

Blue luminescent colloidal silicon nanocrystals (Si-ncs) were synthesized at room temperature by nanosecond pulsed laser ablation of a single-crystal silicon target in de-ionized water. Irregular Si-nc fragments obtained by laser ablation are stabilized into regularly shaped, spherical, and well-separated aggregates during the aging process in water. Aging in de-ionized water for several weeks improved the photoluminescence (PL) intensity. At least two weeks of aging are necessary for observation of broad blue room temperature PL with a maximum centered at 420 nm. Detailed structural analysis revealed that agglomerates after aging for several months contain Si-ncs with irregular shape smaller than the quantum confinement limit (<5 nm). These blue luminescent Si-ncs dispersed in de-ionized water exhibited a PL decay time of 6 ns, which is much faster than that of Si-ncs prepared in traditional ways (usually on the order of microseconds). The oxidized Si-ncs with quantum confinement effects are responsible for a PL band around 400 nm visible to the naked eye at room temperature.