Spectral characterization of scanner based on PCA and BP ANN

A novel method for spectral characterization of scanner was proposed in this paper, which combined the principal component analysis (PCA) and back propagation (BP) artificial neural network (ANN). The natural color system (NCS) color patches were adopted as the color targets. The accuracy of this method was evaluated by spectral root mean square (SRMS) error and the CIEDE2000 color difference specification. The experimental results showed that six principal components were appropriate and the spectral characterization accuracy was outstanding when a 3-20-6 BP net structure was used to estimate the scalars from the scanner red/green/blue (RGB) signals.     

Comprehensive study of blue and green multi-quantum-well light-emitting diodes grown on conventional and lateral epitaxial overgrowth GaN

Growths of blue and green multi-quantum wells (MQWs) and light-emitting diodes (LEDs) are realized on lateral epitaxial overgrowth (LEO) GaN, and compared with identical structures grown on conventional GaN. Atomic force microscopy is used to confirm the significant reduction of dislocations in the wing region of our LEO samples before active-region growth. Differences between surface morphologies of blue and green MQWs are analyzed. These MQWs are integrated into LEDs. All devices show a blue shift in the electroluminescence (EL) peak and narrowing in EL spectra with increasing injection current, both characteristics attributed to the band-gap renormalization. Green LEDs show a larger EL peak shift and a broader EL spectrum due to larger piezoelectric field and more indium segregation in the MQWs, respectively. Blue LEDs on LEO GaN show a higher performance than those on conventional GaN; however, no performance difference is observed for green LEDs on LEO GaN versus conventional GaN. The performance of the green LEDs is shown to be primarily limited by the active layer growth quality.     

The Effect of the Relative Motion of Atoms on the Frequency of the Emitted Light and the Reinterpretation of the Ives-Stilwell Experiment

We examine the process of the emission of light from an atom that is in a relative translational motion with respect to the medium at rest in which the electromagnetic excitations propagate. The effect of Lorentz contraction of the of electron orbits on the emitted frequency is incorporated in the Rydberg formula, as well as the emitter’s Doppler effect is acknowledged. The result is that the frequency of the emitted light is modified by a factor that is identical with what is called the ‘relativistic Doppler effect’. The new emission formula is applied for reinterpretation of the Ives-Stilwell experiment and shown that within the second order of approximation with respect to the speeds of the atom and the ‘absolute speed’ (Earth’s speed relative to the medium), the absolute motion does not affect the interference. The expression for the modification of the frequency involves both a first and a second-order term with respect to the speed of the atoms in the cathode tube. The latter turns out to be quantitatively the same as if the time would have changed its rate in the frame moving with the atoms. Thus, a new interpretation of the results of this famous experiment is provided without stipulating time dilation.     

Definition and extraction of characterization parameters for pyrocarbon by chemical vapor infiltration based on 0 0 2 lattice fringe images

Some quantification methods were developed for microstructure characterization of pyrocarbon (PyC) in carbon/carbon (C/C) composites fabricated by chemical vapor infiltration. Firstly, the feature parameters were strictly defined based on 002 lattice fringe images in high-resolution transmission electron microscopy. They were illustrated with the diagram. Image analysis was adopted to measure or calculate the feature parameters of describing individual fringe or expressing the relationship between fringes. An improved comprehensive parameter, crystallinity factor, was introduced to indicate the crystallization of PyC. Then, judgment rules of microcrystal units were considered from three aspects: interlayer spacing, stacked position, and parallelism between layers. The latter two were analyzed by drawing geometrical figures. Finally, the extracted parameters were displayed in statistical histograms, and also compared with the measurements from manual observation, X-ray diffraction, and selected area electron diffraction. The results were in general agreement. The developed algorithms were performed automatically by the computer. They are especially applicable to analyze the microstructure evolution of C/C composites in graphitization process. The extracted feature parameters supply the basis for studying mechanism of graphitization and interfacial structure of PyC.     

Effect of illumination on the space charge limited current in organic bulk heterojunction diodes

Current–voltage (J–V) characteristics of organic bulk heterojunction diodes based on an interpenetrating network of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C₆₁-butyric acid methyl esters (PCBM) have been studied in the dark and under halogen lamp illumination. The diodes contained 1:1 and 1:0.6 weight ratios of P3HT and PCBM. For both diodes the currents measured in dark (J _d , commonly known as the dark current) in forward bias are found to agree with the space charge limited current (SCLC). The illuminated current consists of a current due to applied voltage (J _da ) and the light generated current (J _L ). J _da  extracted from the illuminated current agrees well with Shockley’s diffusion and recombination current. This observation shows that illumination changes the SCLC into Shockley’s diffusion and recombination current. The forward current under illumination has been observed to be greater than the dark current, which is contrary to the photo–voltaic (PV) theory. This result is well explained by the change of SCLC into Shockley’s diffusion and recombination current. Former address of S.C. Jain: IMEC, Kapeldreef 75, 3001 Leuven, Belgium.     

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl₂O₄ spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×10²⁰ cm⁻³ (and carrier mobility of 28 cm²/Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.     

Measurements of cavitation bubble dynamics based on a beam-deflection probe

We present an optodynamic measurement of a laser-induced cavitation bubble and its oscillations based on a scanning technique using a laser beam-deflection probe. The deflection of the beam was detected with a fast quadrant photodiode which was built into the optical probe. The applied experimental setup enabled us to carry out one- or two-dimensional scanning of the cavitation bubble, automatic control of the experiment, data acquisition and data processing. Shadow photography was used as a comparative method during the experiments.     

Growth and characterization of oriented CdSe nanobelts and nanorods

Oriented CdSe nanobelts and nanorods were grown successfully on GaAs and Si substrates by metal organic chemical vapor deposition. The thickness of Au film coated on the substrate plays an important role in determining the orientation, size, and density of these one-dimensional CdSe nanostructures. Preferred orientation was observed for nanostructures grown on the GaAs substrate coated with thick Au film, but not for the nanostructures grown on the Si substrate. Photoluminescence, transmission electron microscope, and X-ray diffraction measurements show that the CdSe nanostructures could have either wurtzite or zinc-blende structures, and there are more nanostructures with wurtzite structure than with zinc-blende structure.     

Dynamic characterization of charge transport in organic and polymer transistors

In this paper we describe three methods that can be used to measure the transient response of organic and polymer field-effect transistors (FETs) and also how such measurements can be used to determine the drift mobility and velocity. The first method measures the response of a FET to a step voltage applied to the source with the gate grounded and the drain held at close to ground, while the second uses a ramp input to the source. The third technique evaluates the frequency response of the FET, connected as a diode, to a large-signal alternating voltage. We show that important information can be obtained from such measurements which can be quantitatively interpreted with the help of models that we are developing. In general, there is good agreement between the drift mobility measured with these approaches and the field-effect mobility calculated from transistor output and transfer characteristics. The specific results we present in this paper are for pentacene devices; however, other recent work by our group indicates that these results are more general.     

Influence of distances between the lens and the target on the characteristic of laser induced lead plasma

The influence of distances between the lens and a pure lead target on the breakdown spectroscopy of plasmas induced by a Nd:YAG laser ablation was studied at atmospheric pressure. The electron density, the electron temperature and the self-absorption were analysed when the distances were less than the focal length (6.5 cm). The maximal electron density presented at the point 5.8 cm. Moreover, the self-absorption can be observed in all of the wave ranges when the distances are more than the focal length. This phenomenon can be understood by the air breakdown.     

Field-emission diodes based on semiconductor—polycrystalline diamond heterojunctions

A complex of electrophysical and technological studies of solid-state field-emission diodes is carried out. Emission comes from an array of nanometer objects near the semiconductor—polycrystalline diamond interface. The process route of the diode heterostructures includes the fabrication of nanometer masks and nanometer cone (tip) arrays, as well as plasma-assisted growth of polycrystalline diamond films on the surface of structures with nanometer cone arrays. In field-emission diodes thus formed, a current density as high as 20 A/cm² is achieved at a threshold of field emission from the nanotip arrays into the diamond of about 0.5 V.     

Condensation of the Roots of Real Random Polynomials on the Real Axis

We introduce a family of real random polynomials of degree n whose coefficients a _k are symmetric independent Gaussian variables with variance , indexed by a real α≥0. We compute exactly the mean number of real roots 〈N _n 〉 for large n. As α is varied, one finds three different phases. First, for 0≤α<1, one finds that . For 1<α<2, there is an intermediate phase where 〈N _n 〉 grows algebraically with a continuously varying exponent, . And finally for α>2, one finds a third phase where 〈N _n 〉∼n. This family of real random polynomials thus exhibits a condensation of their roots on the real line in the sense that, for large n, a finite fraction of their roots 〈N _n 〉/n are real. This condensation occurs via a localization of the real roots around the values , 1≪k≤n.     

Design and fabrication of the star coupler based on SOI material

A 1×25 star coupler is designed through calculation and beam propagation method (BPM) simulation. Improvement methods are focused on the design of the tapered waveguides in the device, improving the uniformity of the output light power of the star coupler. Utilizing the conventional Si process technology, the device is fabricated based on silicon-on-insulator (SOI) material. The test result shows that the star coupler has a perfect function of power splitting.     

Microcontact printing of self-assembled monolayers to pattern the light-emission of polymeric light-emitting diodes

By patterning a self-assembled monolayer (SAM) of thiolated molecules with opposing dipole moments on a gold anode of a polymer light-emitting diode (PLED), the charge injection and, therefore, the light-emission of the device can be controlled with a micrometer-scale resolution. Gold surfaces were modified with SAMs based on alkanethiols and perfluorinated alkanethiols, applied by microcontact printing, and their work functions have been measured. The molecules form a chemisorbed monolayer of only ∼1.5 nm on the gold surface, thereby locally changing the work function of the metal. Kelvin probe measurements show that the local work function can be tuned from 4.3 to 5.5 eV, which implies that this anode can be used as a hole blocking electrode or as a hole injecting electrode, respectively, in PLEDs based on poly(p-phenylene vinylene) (PPV) derivatives. By microcontact printing of SAMs with opposing dipole moments, the work function was locally modified and the charge injection in the PLED could be controlled down to the micrometer length scale. Consequently, the local light-emission exhibits a high contrast. Microcontact printing of SAMs is a simple and inexpensive method to pattern, with micrometer resolution, the light-emission for low-end applications like static displays. Both authors (J.J. Brondijk and X. Li) contributed equally.     

A Re-interpretation of the Concept of Mass and of the Relativistic Mass-Energy Relation

For over a century the definitions of mass and derivations of its relation with energy continue to be elaborated, demonstrating that the concept of mass is still not satisfactorily understood. The aim of this study is to show that, starting from the properties of Minkowski spacetime and from the principle of least action, energy expresses the property of inertia of a body. This implies that inertial mass can only be the object of a definition—the so called mass-energy relation—aimed at measuring energy in different units, more suitable to describe the huge amount of it enclosed in what we call the “rest-energy” of a body. Likewise, the concept of gravitational mass becomes unnecessary, being replaceable by energy, thus making the weak equivalence principle intrinsically verified. In dealing with mass, a new unit of measurement is foretold for it, which relies on the de Broglie frequency of atoms, the value of which can today be measured with an accuracy of a few parts in 10⁹.     

Alternating current organic light emitting diodes based on polymer heterojunction

Most alternating current (ac) polymer EL (electroluminescent) devices to date are based on symmetrical structure. Here novel alternating current EL devices with asymmetric structure are successfully fabricated by using a hole type polymer PDDOPV [poly (2,5-bis (dodecyloxy)-phenylenevinylene)] and an electron type polymer PPQ [poly (phenyl quinoxaline)]. We report that performance of polymer devices with heterojunction in ac operation is not so sensitive to thickness of the two polymer layers as in direct current (dc) operation. This new advantage of ac operation mode over dc means easy production and cheap facilities in large-scale production in the near future. Different emission spectra are obtained when our ac devices operate in ac mode, forward and reverse bias. Emission spectrum at reverse bias includes two parts: one is from PDDOPV, the other is from PPQ.     

Estimation and prediction of the roughness function on realistic surfaces

Large-eddy simulations are carried out in turbulent open-channel flows to determine the roughness function and the equivalent sand-grain roughness height, k_s, over sand-grain roughness and different types of realistic roughness replicated from hydraulic turbine blades. A range of Reynolds numbers and mean roughness heights is chosen, leading to both transitionally and fully rough regimes. The start of the fully rough regime is shown to depend on the roughness type, and k_s depends strongly on the surface topography. We then examine several existing correlations that predict k_s based on the information of the surface geometry. In the cases where the surface slope is an important parameter, the moments of surface height statistics do not predict the roughness function, while the existing forms of slope-based correlations perform well. The range of applicability of various correlations is shown to vary with the roughness topography, as the critical value of the effective slope, separating the waviness and roughness regimes, is shown to be higher for a realistic surface, compared to the value for the more regular types of roughness that were previously studied.     

Effect of Ta buffer layer and TaO x barrier thickness on the evolution of the structural and magnetic properties of the Fe/TaO x /Co trilayers

Fe/TaO _x /Co trilayers were grown on Si(100)/SiO₂ substrates and on tantalum buffer layers by a high vacuum magnetron sputtering system. The effects of both Ta buffer layer and tantalum-oxide barrier layer thickness on the structural and magnetic properties and the coupling of the ferromagnetic layers have been studied. It was observed that Ta improves the structural properties of the Fe layer resulting in an increased coercive field. For a barrier thickness of 4 nm a weak decoupling starts to appear between the ferromagnetic layers and a clear step formation is observed with increasing thickness. The minor hysteresis loops predict an interlayer coupling for thin barriers. The annealing of trilayers up to 250°C shows an increased coercivity for only the Fe layer. Annealing further at 400°C has the opposite effect of decreasing the coercivity, indicating intermixing at the interfaces of the Fe. The refractive index of the insulator barrier shows that the barrier layer is not totally in the form of tantalum-pentoxide.     

Hierarchy in optical near-fields based on compositions of nanomaterials

Optical near-field interactions exhibit hierarchical responses in the nanometer scale allowing unique functions in nanophotonic systems. Such hierarchical properties in optical near-fields originate various physical entities in the nanometer scale. Engineering nanomaterial compositions, while maintaining geometrically equivalent conditions, leads to characteristic hierarchical responses. We experimentally demonstrate such material-dependent optical near-field hierarchy using core–shell-type nanostructures composed of gold and silver.     

The Effect of Disorder on the Free-Energy for the Random Walk Pinning Model: Smoothing of the Phase Transition and Low Temperature Asymptotics

We consider the continuous time version of the Random Walk Pinning Model (RWPM), studied in (Berger and Toninelli (Electron. J. Probab., to appear) and Birkner and Sun (Ann. Inst. Henri Poincaré Probab. Stat. 46:414–441, 2010; ). Given a fixed realization of a random walk Y on ℤ ^d with jump rate ρ (that plays the role of the random medium), we modify the law of a random walk X on ℤ ^d with jump rate 1 by reweighting the paths, giving an energy reward proportional to the intersection time L_t(X,Y)=ò₀^t 1_Xs=Ys dsL_{t}(X,Y)=\int_{0}^{t} \mathbf {1}_{X_{s}=Y_{s}}\,\mathrm {d}s: the weight of the path under the new measure is exp (βL _t (X,Y)), β∈ℝ. As β increases, the system exhibits a delocalization/localization transition: there is a critical value β _c , such that if β>β _c the two walks stick together for almost-all Y realizations. A natural question is that of disorder relevance, that is whether the quenched and annealed systems have the same behavior. In this paper we investigate how the disorder modifies the shape of the free energy curve: (1) We prove that, in dimension d≥3, the presence of disorder makes the phase transition at least of second order. This, in dimension d≥4, contrasts with the fact that the phase transition of the annealed system is of first order. (2) In any dimension, we prove that disorder modifies the low temperature asymptotic of the free energy.