Range-resolved gas concentration measurements using tunable semiconductor lasers

A method for range-resolved gas sensing using path-integrated optical systems is presented. The method involves dividing an absorption path into several measurement segments and extracting the gas concentration in each segment from two path-integrated measurements. We implemented the method with tunable lasers (a 1389-nm VCSEL and a 10.9-μm pulsed quantum cascade laser) and a group of retro reflectors (RRs) distributed along absorption paths. Using a rotating mirror with the VCSEL configuration, we could scan a group of seven tape RRs spaced by 10 cm in ∼ 9 ms to extract an H₂O concentration profile. Reduced H₂O concentrations were recorded in the segments purged with dry air. Hollow corner cube RRs were used in the quantum cascade laser configuration at distances up to 1.1 km from the laser. Two RRs placed at 66 m and 125 m from the laser allowed us to determine H₂O concentrations in both segments. The RRs returns were separated due to the different round trip travel time of the 200-ns laser pulse. Novel instruments for range-resolved remote sensing in the atmosphere can be developed for a variety of applications, including monitoring the fluxes of atmospheric pollutants and controlling air quality in populated areas. PACS 42.68.Wt; 42.62.Fi; 39.30.+w     

Optical-feedback induced chaos and its control in semiconductor lasers based on sliding tunable dual-wedges

We present a method of chaos and its control in semiconductor laser based on sliding tunable dual-wedges. We numerically reveal the dynamics of chaos and its control in semiconductor lasers by changing the length of sliding tuneable dual-wedges. The results indicated that, with the appropriate changes of the length of sliding tuneable dual-wedge, the laser can be controlled into steady state, single-periodic, multi-periodic and even chaos respectively. The results also provide a new method to generate various period states in the chaos system.     

High-sensitivity transient spectroscopy using tunable diode lasers

Experimental techniques have been developed to monitor transient infrared absorptions using lead-salt tunable diode lasers. The techniques are easily implemented, yield sensitivities which are limited by detector noise at 10^–5 level of absorbance, and have a response time on the order of one microsecond. The transient absorption detection techniques are high frequency versions of the sweep integration technique pioneered by Jennings [Appl. Opt.19, 2695 (1980)]. TDL modulation rates of 100 kHz and 500 kHz allow for absorption sampling rates of 200 kHz and 1 MHz, respectively. In order to reproducibly achieve near-detector-noise-limited sensitivities for 100 kHz TDL modulation rates, an automated analog subtraction circuit has been developed which removes the effects of minor TDL power variations. At the 500 kHz modulation rate, digital filtering techniques are used to remove the effects of this power variation.     

Emission properties of printed organic semiconductor lasers

We investigated the emission properties of a distributed-feedback resonator based on an organic semiconductor patterned by a novel printing technology. We observed the peak splitting of the photonic bandstructure of the periodic grating and extracted the effective refractive index of the outcoupled guided modes. The laser works at the second diffraction order, exhibiting narrow single-mode emission at 637 nm, with a threshold as low as 37 microJ/cm2. The results suggest that direct printing is a promising fabrication technique for optically confined integrated optoelectronics.     

All-optical functions based on semiconductor ring lasers

Semiconductor ring laser （SRL） has been shown to possess robust bistability between its two possible directions, i.e., clockwise （cw） and counter-clockwise （ccw） lasing, routinely demonstrating directional extinction ratio （DER） of 〉 25 dB. In this paper, experimental schemes and results using the SRL as a universal photonic digital element to form all-optical logic, memory, and signal processing circuits are summarized. It is demonstrated that the SRL can be used for both combinatorial and sequential logic functions, and as all-optical regeneration devices. Furthermore, it is shown that a SRL logic circuit can be all-optically reconfigured to perform different all-optical logic functions.     

Laser-related spectroscopy of ion-doped crystals for tunable solid-state lasers

In this work an overview of transition metal (TM) ion- and rare earth (RE) ion-doped crystals for application as tunable solid-state lasers will be given. Spectroscopic and laser results will be presented including recent research and advances in this field. Within this work tunability is defined as the possibility to achieve laser oscillation in the vibronic sideband of a transition. Tunable solid-state lasers are of interest for a wide field of applications, e.g. in scientific research, in medicine, for measurement and testing techniques, ultra short pulse generation, and communication. They can also be used as coherent light sources for second-harmonic generation, for optical parametric oscillators, and for sum- and difference-frequency generation. Tunable laser media based on 3d?3d transitions of transition-metal ions and 4f?5d transitions of rare-earth ions cover nowadays almost the whole spectral range between 270 nm and 4500 nm, see Fig. 1 [1-15]. In comparison to laser systems based on the 4f?4f transitions of trivalent rare-earth ions, tunable lasers based on 3d?3d and 4f?5d transitions are in general affected by a higher probability of excited-state absorption (ESA), a higher probability of non-radiative decay, and a higher saturation intensity leading to higher laser thresholds. Often laser oscillation cannot be obtained at all. These general topics will be considered in Sect. 1, where the basic aspects of tunable solid-state lasers are discussed: these are the preparational, the spectroscopic, and the laser aspect. In Sect. 2, the investigation of transition metal ion-doped crystals with respect to the realization of tunable laser oscillation is presented. The work is focused on transition-metal ions of the 3d row (Fe row) and divided into two subsections according to the octahedral and tetrahedral coordinations of the ion investigated. Each subsection is structured according to the electron configurations: 3d¹, 3d³, 3d⁴, and 3d⁸ for the octahedrally coordinated ions and 3d¹, 3d², and 3d⁴ for the tetrahedrally coordinated ions. Section 3 deals with interconfigurational transitions of divalent and trivalent rare-earth ions. Finally, in Sect. 4 the work is summarized. Received: 22 December 2000 / Published online: 30 March 2001     

Accurate extraction method for the FM response of tunable diode lasers based on wavelength modulation spectroscopy

An accurate wavelength modulation spectroscopy based method to measure the dynamics of the wavelength modulation behavior of tunable diode lasers is introduced in this paper. This method requires only standard equipment and a simple mechanical setup. Under the condition of a constant laser modulation current, the wavelength modulation amplitude can be determined by analysis of the distance between the two zero crossings of the measured second harmonic spectrum of gas absorption. When measuring at different modulation frequencies, the frequency response of the current-to-wavelength tuning coefficient can be obtained. The use of a frequency analyzer instead of a lock-in amplifier to obtain the second harmonic spectrum has two advantages: it provides a higher bandwidth and allows for very precise detection of the zero crossings because of the logarithmic output. The results exhibit very good agreement with a reference measurement performed with a fast FTIR Spectrometer. PACS 42.60.Fc; 42.62.Fi; 42.55.Fx     

Microdisplacement and microvibration sensors based on semiconductor lasers

Conclusion The above analysis of a microvibration sensor based on a semiconductor laser has shown that in the optimal operating regime one can expect a detection ability of 10^–2 nm.It is preferable to record an optical signal (change of radiation power) than an optoelectronic one (change diode voltage).Several sensor variants were constructed: with an ILPN-202 commercial laser diode, with a laser cartridge, and with the LMF-1300 single-mode laser module. Since real sensors contain additional noise sources (pumping- and recording-system noise, fluctuations due to parasitic reflection, etc.), the sensitivity limit could not be reached. The detection ability ranges, depending on the scheme employed, from fraction of a nanometer to several nanometers, but is perfectly acceptable for many practical applications.Translation of Preprint No. 42 of the Lebedev Physics Institute, Academy of Sciences of the USSR, Moscow, 1991.     

Widely tunable mid-IR difference-frequency generation based on fiber lasers

A wide tuning technique for mid-IR difference-frequency generation (DFG) with uniform grating periodically poled LiNbO(3) (PPLN) is presented. Based on the dispersion property of the PPLN, the quasi-phase matching (QPM) band for the pump can evolve to two separate bands, and the spacing between them can be increased with the decrease of the crystal temperature. Two such separate QPM bands can be used for increasing the idler tuning range when the crystal temperature is set to adapt the pump tuning. With the technique, an idler tuning range of 690nm is experimentally achieved with fiber laser fundamental lights.     

Very compact tunable solid-state laser utilizing a thin-film organic semiconductor

Optically pumped organic semiconductor lasers are fabricated by evaporation of a thin film of tris(8-hydroxyquinoline) aluminum (Alq(3)) molecularly doped with a laser dye on top of a polyester substrate with an embossed grating structure. We achieve low-threshold, longitudinally monomode distributed-feedback laser operation. By varying the film thickness of the organic semiconductor film, we can tune the wavelength of the surface-emitting laser over 44 nm. The low laser threshold allows the use of a very compact all-solid-state pump laser ( approximately 10 cm long). This concept opens up a way to obtain inexpensive lasers that are tunable over the whole visible range.     

High-power tunable IR Raman and optically pumped molecular lasers for spectroscopy

Recent developments of tunable IR compressed-H₂ and liquid-N₂ Raman Lasers as well as resonantly pumped NH₃ lasers are reviewed. Emphasis is placed on research carried out at the Quantum Radiophysics Laboratory of the Lebedev Physical Institute in Moscow. Paper was prepared for presentation at FICOLS     

High-sensitivity intracavity laser absorption spectroscopy with vertical-external-cavity surface-emitting semiconductor lasers

We report the demonstration of high-sensitivity intracavity laser absorption spectroscopy with multiple-quantum-well vertical-external-cavity surface-emitting semiconductor lasers (VECSEL's). A detection limit of 3x10(-10) cm (-1) has been achieved. The spectrotemporal dynamics of a VECSEL in the 1030-nm wavelength region has been studied. The laser was operating cw at room temperature, with a baseline signal-to-noise ratio as high as 400. The laser was optically pumped with a threshold as low as 80 mW and was broadly tunable over a spectral range of ~75 nm .     

Flexible control of semiconductor laser with frequency tunable modulation transfer spectroscopy

We introduce a new method of simultaneously implementing frequency stabilization and frequency shift for semiconductor lasers. We name this method the frequency tunable modulation transfer spectroscopy(FTMTS). To realize a stable output of 780 nm semiconductor laser, an FTMTS optical heterodyne frequency stabilization system is constructed. Before entering into the frequency stabilization system, the probe laser passes through an acousto-optical modulator(AOM) twice in advance to achieve tunable frequency while keeping the light path stable. According to the experimental results, the frequency changes from 120 MHz to 190 MHz after the double-pass AOM, and the intensity of laser entering into the system is greatly changed, but there is almost no change in the error signal of the FTMTS spectrum. Using this signal to lock the laser frequency, we can ensure that the frequency of the laser changes with the amount of AOM shift. Therefore,the magneto-optical trap(MOT)-molasses process can be implemented smoothly.     

Photodetectors based on small-molecule organic semiconductor crystals

Small-molecule organic semiconductor crystals(SMOSCs) combine broadband light absorption(ultraviolet–visible–near infrared) with long exciton diffusion length and high charge carrier mobility. Therefore, they are promising candidates for realizing high-performance photodetectors. Here, after a brief resume of photodetector performance parameters and operation mechanisms, we review the recent advancements in application of SMOSCs as photodetectors, including photoconductors, phototransistors, and photodiodes. More importantly, the SMOSC-based photodetectors are further categorized according to their detection regions that cover a wide range from ultraviolet to near infrared. Finally, challenges and outlooks of SMOSC-based photodetectors are provided.     

Wavelength modulation spectroscopy based on quasi-continuous-wave diode lasers

A modified wavelength modulation spectroscopy（WMS）based on the self-heating effect of the tunable diode laser when driven in quasi-continuous-wave（QCW）mode is investigated.A near-infrared distributed feedback（DFB）diode laser working at the QCW mode is employed as the QCW light source,and CO2 is selected as the target gas.The characteristic of the QCW second harmonic（2f）line profile is analyzed through a comparison with that of the traditional CW WMS with the same system.A noise-equivalent absorbance of 3.2×10-5 Hz-1/2 for CO2 at 1.58μm is obtained with 18-m optical path.The QCW WMS lowers the dependence on lasers and expands selectivity,thus verifying the feasibility of the method.     

Two-photon lasers based on intersubband transitions in semiconductor quantum wells

We propose to make a two-photon laser based on intersubband (sublevel) transitions in semiconductor nanostructures. The advantages and feasibility of such a two-photon laser are analyzed in detail using the density matrix approach. Both one-photon and two-photon gains in a three subband quantum well structure are studied on the same footing to show how the two-photon gain can be maximized, while the competing one-photon gain is minimized. The results show that a sufficient two-photon gain can be achieved to overcome one-photon competition and the loss of a conventional semiconductor cavity, making intersubband transitions one of the very few feasible approaches to two-photon lasing.