Effects of target-substrate geometry and ambient gas pressure on FePt nanoparticles synthesized by pulsed laser deposition

FePt nanoparticles, in the forms of nanoparticle agglomerates and floccules-like nanoparticle networks, can be synthesized by pulsed laser deposition (PLD) at different ambient gas pressures. Backward plume deposition (BPD), as special target-substrate geometry, can achieve higher uniformity in terms of agglomerate size and size distribution, compared to conventional PLD. Both as-deposited FePt nanoparticles exhibit low K_u fcc phase and post-annealing at 600 °C is required for the phase transition to high K_u fct phase. FePt nanoparticle agglomerates deposited by BPD were found to have better fct phase crystallinity after annealing, which may be caused by the higher kinetic energy of backward moving ablated species due to shorter travel distance.     

Pulsed-laser deposition of MgB2 and B thin films

Thin films of the novel superconductor MgB₂ were deposited from an Mg-enriched MgB₂ target or by alternating ablation from Mg and B targets, depositing multilayers. The superconducting films were achieved in situ by a two-step process: deposition at low temperatures ranging from room temperature to 200 °C and subsequently heating to 600 °C. The color of the plasma originating from Mg or Mg-enriched MgB₂ targets during the deposition is an indicator of the constituents of the plasma and can be used to adjust the plasma parameters like pressure and energy density. The films showed a reduced critical temperature (T_c) compared to the bulk value (39 K), which is attributed to the small grain sizes and the relatively high base pressure of the system (10^-7 mbar) causing impurities (oxygen, carbon...). To investigate B oxidation and to determine the suitable deposition conditions for B, films made by pulsed-laser deposition (PLD) from B target were analyzed by XPS. The films are very sensitive to the ambient gas purity and the base pressure. We anticipate an improvement of T_c and the crystallinity of MgB₂ thin films by using PLD in high vacuum and with a high purity Ar and H₂ gas mixture. PACS 74.70.Ad     

Free precession and transverse relaxation of hyperpolarized <Superscript>129</Superscript>Xe gas detected by SQUIDs in ultra-low magnetic fields

We studied the free precession of the nuclear magnetization of hyperpolarized ¹²⁹Xe gas in external magnetic fields as low as B₀ = 4.5 nT, using SQUIDs as magnetic flux detectors. The transverse relaxation was mainly caused by the restricted diffusion of ¹²⁹Xe in the presence of ambient magnetic field gradients. Its pressure dependence was measured in the range from 30 mbar to 850 mbar and compared quantitatively to theory. Motional narrowing was observed at low pressure, yielding transverse relaxation times of up to 8000 s.     

Room temperature ferromagnetism of amorphous MgO films prepared by pulsed laser deposition

Amorphous MgO thin films were prepared by pulsed laser deposition (PLD) under various oxygen pressures. The structural, magnetic, and optical properties of the films were investigated. All as-deposited samples exhibit room temperature ferromagnetism, which depend strongly on oxygen pressure. It is found that the saturation magnetization (M _s) initially increases with the oxygen pressure, the maximum M _s of 8.57 emu/cm³ is obtained for the MgO film deposited under an oxygen pressure of 2 mTorr. However, the M _s significantly reduces at higher oxygen pressures. Further X-ray photoelectron spectroscopy and photoluminescence demonstrate that the long-range magnetic order in amorphous MgO films can be attributed to the nonstoichiometry effect and the presence of Mg vacancies.     

Influence of ambient pressure on the hole formation in laser deep drilling

We investigate the temporal evolution of the hole depth and shape for percussion drilling at different ambient pressure conditions. Deep drilling is performed in silicon as target material by ultrashort laser pulses at 1030 nm and a duration of 8 ps. Simultaneously, the backlit silhouette of the hole is imaged perpendicular to the drilling direction. While typical process phases like depth development and shape evolution are very similar for atmospheric pressure down to vacuum conditions (10^?2 mbar), the ablation rate in the initial process phase is significantly increased for reduced pressure. The number of pulses till the stop of the drilling process also increases by a pressure reduction and exceeds drilling at atmospheric conditions by two orders of magnitude for a pressure of ca. 10^?2 mbar. Accordingly, the maximum achievable hole depth is more than doubled. We attribute this behavior to an enlarged mean free path for ablation products at reduced pressure and therefore lower or no deposition of particles inside the hole capillary under vacuum conditions while debris fills the hole already after a few thousand pulses at atmospheric pressure. This is supported by scanning electron cross section images of the holes.     

A shadowed off-axis production of Ge nanoparticles in Ar gas atmosphere by pulsed laser deposition

In this work, we report on the production of Ge nanoparticles (NPs) in an inert Ar gas atmosphere by pulsed laser deposition (PLD) at room temperature (RT). The direct deposition of energetic particles/droplets resulting from the ablation process of the target material has been avoided by using an original and customized off-axis shadow mask (shadowed off-axis) deposition set-up where the NPs deposition on the substrate takes place by means of scattering between the NPs formed in the vapor phase and the background Ar atoms. It is found that the Ar gas pressure parameter has a relevant role in the crystallization process, with better crystallinity obtained as the background Ar pressure is raised for the given experimental conditions.     

Effect of growth defects on microwave properties in epitaxial Ba0.5Sr0.5TiO3 thin films grown on (001) MgO by pulsed laser deposition

Ba_0.5Sr_0.5TiO₃ (BSTO) films have been grown heteroepitaxially on (001) MgO substrates by pulsed laser deposition (PLD) to fabricate microwave phase shifters for the wide frequency range 45 MHz–50 GHz. Both as-grown and ex situ annealed films have a cube on cube epitaxial relationship with ?100?BSTO//?100?MgO. Threading dislocations are the dominant defects, mostly with Burgers vectors b = ?101?. Growth at 10^?1 mbar oxygen pressure, compared to 10^?4 mbar, resulted in significantly better properties. Ex situ annealing of the film grown at 0.1 mbar resulted in a reduction of 40% in threading dislocation density and a 40% increase in dielectric tunability.     

Structural characterization of AlN films synthesized by pulsed laser deposition

We obtained AlN thin films by pulsed laser deposition (PLD) from a polycrystalline AlN target using a pulsed KrF* excimer laser source (248 nm, 25 ns, intensity of ∼4 × 10⁸ W/cm², repetition rate 3 Hz, 10 J/cm² laser fluence). The target-Si substrate distance was 5 cm. Films were grown either in vacuum (10⁻⁴ Pa residual pressure) or in nitrogen at a dynamic pressure of 0.1 and 10 Pa, using a total of 20,000 subsequent pulses. The films structure was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectral ellipsometry (SE). Our TEM and XRD studies showed a strong dependence of the film structure on the nitrogen content in the ambient gas. The films deposited in vacuum exhibited a high quality polycrystalline structure with a hexagonal phase. The crystallite growth proceeds along the c-axis, perpendicular to the substrate surface, resulting in a columnar and strongly textured structure. The films grown at low nitrogen pressure (0.1 Pa) were amorphous as seen by TEM and XRD, but SE data analysis revealed ∼1.7 vol.% crystallites embedded in the amorphous AlN matrix. Increasing the nitrogen pressure to 10 Pa promotes the formation of cubic (≤10 nm) crystallites as seen by TEM but their density was still low to be detected by XRD. SE data analysis confirmed the results obtained from the TEM and XRD observations.     

Dispersion of laser droplets using H+ ions and annealing effect on pulsed laser deposited nickel ferrite thin films

Nickel ferrite thin films were deposited by a pulsed laser deposition (PLD) technique on silicon substrate at room temperature in a vacuum of 5×10⁻⁵ mbar. The films were subjected to different annealing temperatures from 300–900°C and were also exposed to single shot energetic hydrogen ions using a Dense Plasma Focus (DPF) device. The changes induced in the films exposed at different distances from the top of the anode were investigated. The structural, morphological and magnetic properties of the annealed and exposed samples were investigated. X-ray diffraction (XRD) studies reveal the presence of a single phase of nickel ferrite after annealing. SEM micrographs indicate an increase in the grain size, both on annealing as well as on exposure to hydrogen ions. Annealing and hydrogen ion irradiation induced an enhancement in the magnetic moments. Laser droplets which are inherent in films deposited by laser ablation were found to be dispersed as a result of single shot hydrogen ion irradiation from the DPF.     

Pulsed laser deposition of tantalum pentoxide film

We report thin tantalum pentoxide (Ta₂O₅) films grown on quartz and silicon substrates by the pulsed laser deposition (PLD) technique employing a Nd:YAG laser (wavelength 5=532 nm) in various O₂ gas environments. The effect of oxygen pressure, substrate temperature, and annealing under UV irradiation using a 172-nm excimer lamp on the properties of the grown films has been studied. The optical properties determined by UV spectrophotometry were also found to be a sensitive function of oxygen pressure in the chamber. At an O₂ pressure of 0.2 mbar and deposition temperatures between 400 and 500 °C, the refractive index of the films was around 2.18 which is very close to the bulk Ta₂O₅ value of 2.2, and an optical transmittance around 90% in the visible region of the spectrum was obtained. X-ray diffraction measurements showed that the as-deposited films were amorphous at temperatures below 500 °C and possessed an orthorhombic (#-Ta₂O₅) crystal structure at temperatures above 600 °C. The most significant result of the present study was that oxygen pressure could be used to control the composition and modulate optical band gap of the films. It was also found that UV annealing can significantly improve the optical and electrical properties of the films deposited at low oxygen pressures (<0.1 mbar).     

Evolution of structural and magnetic properties of FePt/C granular films with thermal annealing

We report the structural and magnetic properties of as-deposited and thermally annealed FePt/C granular multilayer films. The as-deposited system exhibits a disordered fcc FePt phase with an average grain size of 3 nm. Thermal annealing at 650 °C results in partial L1₀ ordering and an associated grain growth to 7 nm. Mössbauer measurements show that there is no non-magnetic component present, suggesting that carbon resides only in the grain boundary region. The ferromagnetic grains are magnetically decoupled.     

Pure and Nb-doped TiO1.5 films grown by pulsed-laser deposition for transparent p-n homojunctions

Pure and Nb-doped titanium oxide thin films were grown on sapphire substrates by pulsed-laser deposition in vacuum (10⁻⁷ mbar). The PLD growth leads to titanium oxide thin films displaying a high oxygen deficiency (TiO_1.5) compared with the stoichiometric TiO₂ compound. The structural and electrical properties (phase, crystalline orientation, nature and concentration of charge carriers, etc.) of these titanium oxide films were studied by XRD measurements and Hall effect experiments, respectively. The undoped TiO_1.5 phase displayed a p-type semiconductivity. Doping this titanium oxide phase with Nb⁵⁺ leads to an n-type behaviour as is generally observed for titanium oxide films with oxygen deficiency (TiO_x with 1.7 < x < 2). Multilayer homojunctions were obtained by the stacking of TiO_1.5 (p-type) and Nb-TiO_1.5 (n-type) thin films deposited onto sapphire substrates. Each layer is 75 nm thick and the resulting heterostructure shows a good transparency in the visible range. Finally, the I-V curves obtained for such systems exhibit a rectifying response and demonstrate that it is possible to fabricate p-n homojunctions based only on transparent conductive oxide thin films and on a single chemical compound (TiO_x).     

Synthesis of FeCo nanoparticles by pulsed laser deposition in a diffusion cloud chamber

Magnetic FeCo nanoparticles were successfully synthesized in a diffusion cloud chamber setup within pulsed laser deposition (PLD) equipment. The variation of morphology and size of FeCo nanoparticles with the number of laser pulses, ambient gas pressure and temperature gradient was studied. It was observed that the morphology of the nanoparticles changes from “cloud-like” fractal clusters to particle chains; average particle size increased at higher argon gas pressure. Increasing the temperature gradient considerably reduced the agglomeration of the nanoparticles. Nanoparticles deposited using the diffusion cloud chamber are found to be crystalline.     

Fabrication of ZnO thin films by femtosecond pulsed laser deposition

The growth of ZnO thin films on sapphire substrate using the femtosecond PLD technique is reported. The effect of substrate temperature and oxygen pressure on the structural properties of the films was studied. Highly c-axis oriented ZnO films can be grown on sapphire substrates under vacuum conditions using the femtosecond PLD process. There is an optimum substrate temperature for the pulsed laser deposition of ZnO film that enhances the thermodynamic stability and allows the formation of well-crystallized thin films. The crystal quality of the films can be further improved by increasing the deposition time and introducing oxygen during the pulsed laser deposition process.     

Magnetic properties and domain structures of FeSiB thin films

Smooth Fe₇₈Si₁₀B₁₂ thin films were prepared by r.f. sputtering with the very slow deposition rate of 0.59 nm/min. The as-deposited films were not fully amorphous, instead α-Fe(Si) nanocrystallites were found to be embedded in the amorphous matrix. The saturation magnetostriction λ_s of the as-deposited film is about 6.5 × 10⁻⁶. After annealing at 540 °C for 1 h in an ultrahigh vacuum (4.5 × 10⁻⁵ Pa), the fraction of α-Fe(Si) crystalline phase largely increased, and correspondingly the λ_s decreased to 4.5 × 10⁻⁷. Ripple domain structures were observed in the as-deposited film, while dense stripe domains were observed in the annealed sample, characterized by a very narrow domain width of 80 nm. (1 1 0) texture and island-like configuration of α-Fe(Si) nanocrystallites formed by the annealing treatment are responsible for the perpendicular anisotropy. For the as-deposited film, the magnetization curves increased linearly with the increase of the magnetic field, and showed the very small hysteresis. On the other hand, the annealed sample clearly showed a very steep jump near the origin, which is due to the switch process of the dense stripe domain.     

Diamond-like-carbon films produced by magnetically guided pulsed laser deposition

We have compared the quality of carbon films deposited with magnetically guided pulsed laser deposition (MGPLD) and conventional pulsed laser deposition (PLD). In MGPLD, a curved magnetic field is used to guide the plasma but not the neutral species to the substrate to deposit the films while, in conventional PLD, the film is deposited with a mixture of ions, neutral species and clusters. A KrF laser pulse (248 nm) was focused to intensities of 10 GW/cm² on a carbon source target and a magnetic field strength of 0.3 T was used to steer the plasma around a curved arc to the deposition substrate. Electron energy loss spectroscopy was used in order to measure the fraction of sp³ bonding in the films produced. It is shown that the sp³ fraction, and hence the diamond-like character of the films, increased when deposited only with the pure ion component by MGPLD compared with films produced by the conventional PLD technique. The dependence of film quality on the laser intensity is also discussed. Received: 7 December 2000 / Accepted: 20 August 2001 / Published online: 2 October 2001     

Optical and electrical properties of hydrogenated yttrium nanoparticles

We studied the effect of hydrogen in yttrium nanoparticles on a quartz substrate, using optical spectroscopy and electrical resistance measurements. Pulsed laser deposition is used to obtain the Y clusters in an UHV environment. We show, that these clusters are highly sensitive to monoatomic H₁ produced from ambient hydrogen gas pressures, ranging from 10^-5 to 50 mbar with our experimental arrangement. The changes of optical and electrical properties due to the chemical reaction within the particles are sufficient to consider this material as a possible sensor for low concentrations of hydrogen. Received 29 November 2000     

Effect of ambient nitrogen pressure on the formation and spatio-temporal behaviour of C<Subscript>2</Subscript> and CN

We report the effect of ambient gas on the formation as well as propagation behaviour of ablated species C₂ and CN within the carbon plasma created by focussing a high-power Nd:YAG (λ = 1064 nm) laser onto the rotating graphite target in the nitrogen ambient. The formation of C₂ takes place earlier as well as nearer the target compared to that of CN which forms later and far from the target, in 1.2 mbar pressure of N₂ gas. Peak arrival time vs. nitrogen gas pressure plot shows a shock wave-like dependence t ∝ p ⁿ in the pressure range 1.2–120 mbar (collisional regime) which indicates plume confinement with increases in ambient pressure. At higher pressure, thermalization takes place.     

Wide transparency range and high refractive index lead–niobium-germanate glass thin films

Lead–niobium-germanate glass thin films have been produced by pulsed laser deposition in a broad O₂ pressure range (10^-6–10^-1 mbar). The cation composition in the films approaches that of the glass target for a pressure of 10^-2 mbar. The oxygen content is only close to or above that of the glass for a pressure close to 10^-1 mbar, for which a Pb enrichment is also observed. Films grown in vacuum are highly absorbing, whereas transparent films with an absorption edge shifted to the UV with respect to the bulk glass are produced for pressures higher than 10^-2 mbar. The evolution of the optical energy gap and the refractive index of the films with the oxygen pressure is correlated to the changes observed in the film composition and discussed in terms of the features of the deposition process, the role of oxygen in the formation of the glass network and the progressive increase of the oxidation state of the cations as the oxygen pressure is increased. PACS 81.05.Kf; 78.20.Ci; 81.15.Fg     

Growth of single-phase c-axis aligned La1.2Ca1.8Mn2O7 films on SrTiO3 (001)

We report the growth of single phase, c-axis aligned thin films of La_1.2Ca_1.8Mn₂O₇ on SrTiO₃ (001) substrates using a controlled pulsed laser deposition method. In this method, constraint of epitaxy is utilized to stabilize the Ruddlesdon-Popper (RP) phase of La_1.2Ca_1.8Mn₂O₇. Oxygen ambient pressure and the rate of deposition play a very important role in influencing the epitaxial growth as well as maintaining phase purity of the material. The oxygen pressure inside the deposition chamber was very precisely controlled and varied during the layer-by-layer growth of the film. Films, prepared by our method, show excellent electrical and magnetic characteristics with a sharp metal-insulator transition at T_M-I=90 K, closely followed by a magnetic transition at T_C=91 K.