Electrical Conductivity in Polyazomethines: A Novel Mechanism Derived from All Valence MO Calculation and IR Study of Polymer–Dopant Interaction

A simple mechanism is proposed to explain the variation of electrical conductivity in polyazomethines. The results of semiempirical, all valence, molecular orbital calculations obtained from the PM3 method have been employed to arrive at the mechanism. The difference of energy (ΔE) between highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) alone could not explain the variation in electrical conductivity; however, ΔE together with the LUMO electron density at the atoms that lie on the continuous chain could account for the electrical conductivity in these polymers. The LUMO electron density on these centers may be visualized as the carrier movement. In certain polymers there are intrinsic holes in HOMO. The movement of these intrinsic holes also adds to the electrical conduction. The polyazomethines are prepared by the condensation of diamines with azo bis-aldehydes. A few of these polymers were doped with silver nanoparticles. Many of the doped polymers showed substantial enhancement in conductivity. Strong polymer–dopant interaction, identified by IR spectroscopy, is proposed to be responsible for the increase in conductivity.     

Einstein relation in chemically doped organic semiconductors

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

外场下SnS分子结构及其特性

对S原子采用6-311++G**基组,Sn原子采用SDB-cc-pVTZ基组,利用密度泛函(B3P86)方法对SnS分子进行了基态结构优化,并研究了外场作用下SnS基态分子键长、能量、能级分布、电荷布居分布、谐振频率和红外谱强度的影响规律.然后利用含时密度泛函(TD-B3P86)方法研究了SnS分子在外场下的激发特性.结果表明,在所加的电场范围内(-0.04 a.u.-0.04 a.u.),随着正向电场的增大,分子键长和红外谱强度均是先减小后增大;总能E,SnS基态分子的最高已占据轨道能量EH和谐振频率均是先增大后减小;分子的最低未占空轨道能量EL和能隙Eg均随正向电场的增大而减小.随着正向电场的增大,SnS分子由基态至前9个单重激发态跃迁的波长增大,激发能则减小.     

GeTe和GeSe 分子在外电场下的特性研究

对Ge原子采用6-311++G^**基函数,Te和Se原子采用SDB-cc-pVTZ基函数,利用密度泛函理论的局域自旋密度近似方法优化得到了GeTe和GeSe分子的稳定构型,并计算了外电场作用下GeTe和GeSe基态分子的平衡核间距、总能量、最高已占据分子轨道能量E_H、最低未占分子轨道能量E_L、能隙、谐振频率和红外谱强度. 在上述计算的基础上利用单激发组态相互作用-局域自旋密度近似方法研究了GeTe和GeSe分子在外电场下的激发特性. 结果表明:随着正向电场强度的增大,分子核间距逐渐增大,分子总能量逐渐降低,谐振频率逐渐减小,红外谱强度则逐渐增大. 在0-2.0569×10¹⁰ V·m^-1的电场范围内,GeTe分子的E_H 均高于GeSe分子的E_H;随着正向电场的增大,GeTe与GeSe的E_H差逐渐变大,GeTe的E_L低于GeSe的E_L,它们的E_L均随正向电场的增大而增大. 无外场时,GeTe分子的能隙比GeSe分子的能隙要小;在外电场反向增大的过程中, GeTe和GeSe的分子能隙始终减小. 外电场的大小和方向对GeTe和GeSe分子的激发能、振子强度及跃迁的波长均有较大影响. 关键词： GeTe GeSe 外电场 激发态     

Theoretical studies of the structures and optical properties of the bifluorene and its derivatives

The ground and excited structures of the molecules are compared basis on the calculated by HF and CIS, respectively. The ionization potentials (IPs), electron affinities (EAs) and HOMO–LUMO gaps (ΔE_HOMO–LUMO) of the oligomers are studied by the density functional theory (DFT) with B3LYP functional while the vertical excitation energies (E_gs) and the maximal absorption wavelength λ_abs of oligomers of bifluorene and its derivatives DFE, DFA, DFBT, FDBO, and FSCHD are studied employing the time dependent density functional theory (TD‐DFT) and ZINDO. Compared with BF, the derivatives DFE, DFA, and DFBT are better conjugated, easier to give an electron or a hole, as well as get an electron or a hole. Their HOMO–LUMO gaps are narrower and they have lower vertical excitation energies. The absorption and emission spectra of them are red shifting. However, FDBO and FSCHD are in the other way round. It is important that FDBO and FSCHD are good blue emitters. Copyright © 2007 John Wiley & Sons, Ltd.     

Charge-transfer at silver/phthalocyanines interfaces

Valence band photoemission spectroscopy (VB-PES) and inverse photoemission spectroscopy (IPES) were employed to determine the occupied and unoccupied density of states upon silver deposition onto layers of two phthalocyanines (H₂Pc and CuPc). The two different Pc molecules give rise to very distinct behaviour already during the initial stage of silver deposition. While in the CuPc case no shift occurs in the energy levels, the H₂Pc highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) are shifting simultaneously by 0.3 eV, i.e., the HOMO shifts away from the Fermi level while LUMO shifts towards the Fermi level. As the silver quantity increases the HOMO levels of both Pcs are shifting towards the Fermi level. When the Fermi level is resolved in the VB spectra, the characteristic features of H₂Pc and CuPc are smeared out to some extent. Shifts in HOMO and LUMO energy positions as well as changes in line shapes are discussed in terms of charge-transfer and chemical reactions at the interfaces.     

SnSe分子外场下的基态性质和激发态性质

对Sn原子使用SDB-cc-pVTZ基组, Se原子采用6-311++G^**基组, 利用密度泛函中的B3LYP方法研究了电场强度为-0.04–0.04 a.u.的外电场对SnSe基态分子的几何结构、 电荷布居分布、 HOMO能级、 LUMO能级、 能隙、 费米能级、 谐振频率和红外光谱强度的影响. 继而使用含时密度泛函(TD-B3LYP) 方法研究了SnSe分子在外场下的激发特性. 结果表明, 外电场的大小和方向对SnSe分子基态的这些性质有明显影响. 在所加的电场范围内(-0.04 a.u.–0.04 a.u.), 随着正向电场的增大, 核间距先减小后增大, 在F=0.03 a .u.时取得最小值0.2317 nm; 分子电偶极矩μ近似线性地增大; E_L, E_H、 费米能级E_F和能隙E_g均减小. 随着正向电场逐渐增大, 分子总能量和谐振频率均先增大后减小; 红外谱强度则先减小后增大, 在F=0.03 a.u.时, 取得最小值 0.1138 km·mol^-1. 由基态到第1–10个单重激发态的波长均随着正向电场的增大而增大. 激发能均随着正向电场的增大而减小. 电场的引入可改变SnSe分子激发态出现的顺序并使得一些禁止的跃迁变得可能. 关键词： SnSe 外电场 能隙 激发特性     

有机半导体的物理掺杂理论

基于最低未被占据分子轨道（LUMO）和最高被占据分子轨道（HOMO）的高斯态密度分布与载流子在允许量子态中的费米-狄拉克（Fermi-Dirac）分布,提出有机半导体中物理掺杂的理论模型;研究了掺杂浓度、温度和禁带宽度对载流子浓度的影响,并与一些报道的实验结果做了比较.研究发现无论是否掺杂,温度升高时,有机半导体中的载流子浓度都会增大,并且随温度倒数的线性减小而指数增大;对于本征有机半导体,载流子浓度随禁带宽度的增大而指数下降,随高斯分布宽度的平方指数增加;对杂质和主体不同能级关系的掺杂情形下掺杂浓度对载 关键词： 有机半导体 掺杂 高斯态密度 载流子浓度     

DFT and ab initio study on non-linear optical (NLO) properties of some organic complexes with different conjugate linker and substituent groups

A series of Schiff-bases chromophores containing imine or double C=C bond linkers between the donor and acceptor have been studied by first-principles calculations. The molecular structures, electronic properties and second order nonlinearities were investigated by DFT and ab initio methods. The optimized structural parameters of these Schiff-base derivates showed that these compounds are stable. The results of TD-DFT calculations indicate that the derivatives with the heterocyclic and imine linker have a red shift absorption compared to derivatives with the double C=C or N=N bonds. The analysis of the frontier molecular orbitals indicates that the CN group and the heterocycle linked by the CN or imine group has contribution to the LUMO orbital while the groups N(CH₃)₂ and the benzene ring linked by the double C=C or N=N bond have contribution to the HOMO orbital. The CN and the heterocyclic acceptors enable the derivatives to have a larger first static hyperpolarizability. However, the compounds 3-{4-[(4-Dimethylamino-phenylimino)-methyl]-pyridin-1-yl}-propanel-1-sulfonoperoxoic acid and 3-{4-[(4-Dimethylamino-phenylimino)-methyl]-quinolin-1-yl}propanel-1-sulfonoperoxoic acid with a substituent also have large first static hyperpolarizabilities due to the overwhelming contributions of electron density of the group to the HOMO orbital, that is, the HOMO orbital were constituted by the SO ₃ ^? group only. In order to understand the influence of the energy gap (??E) between the HOMO and the LUMO orbitals on the first static hyperpolarizability, we calculated the energy gap (??E) of all Schiff-base compounds. The results show that the smaller the HOMO-LUMO energy gap the larger the first static hyperpolarizability. The present study demonstrated that these compounds which have pure C=N double bond and heterocyclic substitution groups may have potential applications in the development of NLO materials.     

Theoretical study on the composition dependence of Ga8−nAsn (n=0-8) clusters

Using full-potential linear-muffin-tin-orbital molecular-dynamics (FP-LMTO-MD) method, we have investigated the dependence of GaAs clusters with eight atoms on composition. It is found that the ground state structures for Ga-rich and As-rich clusters are cube structures. As the ratio between gallium atoms and arsenic atoms is close to one, structural distortion become increasingly severe, or even the clusters adopt other geometrical configurations as their ground state structures. The energy gap E_g between the highest-occupied molecular orbital (HOMO) and the lowest-unoccupied molecular orbital (LUMO), and the vertical electron affinity show a certain degree of even/odd alternation with cluster composition. Among nine Ga_8−nAs_n (n=0-8) clusters, only a few of clusters have different energy orders between the ionic and neutral isomers with large binding energy. Some ionic structures would change into other configurations due to severe structural distortion.     

自辐射场下PuO分子光谱研究

在相对论有效原子实势近似下, 以Pu为SDD基组、O为6-311+G^*基组, 采用优选的密度泛函 B3LYP方法, 研究了用电场摸拟钚本身产生自辐射场(-0.005—0.005 a.u.) 作用下氧化钚(PuO)基态分子的最高占据轨道(HOMO)能级E_H、最低空轨道(LUMO)能级E_L、能隙E_g和费米能级E_F. 结果表明: 在所加的电场范围内, E_H随着电场的增加均逐渐减少, E_F随着电场的增加均逐渐增大, E_g始终处于增大的趋势, 费米能级E_F上升, 占据轨道的电子难以被激发至空轨道而形成激发态, PuO分子在自辐射场中更趋于稳定, 可以阻止O₂, H₂等扩散到表面内层而腐蚀钚表面, 有利于了钚在自辐射场中抗腐蚀.     

Density functional investigation on the structures and properties of Li atom doped Au20 cluster

Structures and properties of an Au₂₀ cluster doped with two Li atoms, Au₁₈Li₂, have been investigated using relativistic density functional theory within the framework of the zeroth-order regular approximation. Various initial structures have been generated and employed for geometry optimization followed by vibration analysis to check the stability of the final optimized structures. We have calculated various properties like binding energy, ionization potential, electron affinity and the HOMO–LUMO gap of these structures. It has been found that two dopant Li atoms favour occupying two different surface positions of the pyramidal Au₂₀ cluster. The binding energy of the surface-doped Au₁₈Li₂ cluster is 1.017?eV higher than that of the pure Au₂₀ cluster and the HOMO–LUMO gap (1.742?eV) is as high as a pure Au₂₀ cluster (1.786?eV). Interestingly, we observe that the HOMO–LUMO gap as well as the binding energy can be increased beyond those of the Au₁₈Li₂ cluster with the help of further Li atom doping. In fact, a doped tetrahedral Au₁₆Li₄ cluster, where all the dopants are at the surface sites, possesses a very high HOMO–LUMO gap of 2.117?eV. Geometric and energetic parameters indicate that the Au₁₆Li₄ cluster might be considered as a possible ‘superatom’ in the design of novel cluster-assembled materials.     

Self-consistent theory for the built-in voltage in metal–organic semiconductor–metal structures

A self-consistent theory for calculation of built-in voltage (U_bi) of metal–organic semiconductor–metal (MOSM) structures is developed based on Gaussian energy distribution of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO). It is shown that the built-in voltage depends not only on the work function difference of the two electrodes, but also on the mean energy level of HOMO and LUMO, as well as the Gaussian width of the energy distribution. The theory predicts that the spreading of HOMO and LUMO levels will results in an increase of U_bi, and that U_bi decreases with increasing temperature.     

Electronic properties of phenanthrimidazoles as hole transport materials in organic light emitting devices and in photoelectron transfer to ZnO nanoparticles

Phenanthrimidazoles as hole transport materials have been synthesized, characterized, and applied as nondoping emitters in organic light emitting devices. The synthesized molecules possess high fluorescent quantum yield and thermal properties and display film forming abilities. The highest occupied molecular orbital (HOMO) energies of these materials are shallower than the reported tris(8‐hydroxyquinoline)aluminum (Alq₃), which enables the hole transport ability of these phenanthrimidazoles. Taking advantage of the thermal stability and hole transporting ability, these compounds can be used as a functional layer between NPB [4,4‐bis(N‐(1‐naphthyl)‐N‐phenylamino)biphenyl] and Alq₃ layers and show that these phenanthrimidazoles can be alternatively used as novel hole transport materials and to improve the device performances. Geometrical, optical, electrical, and electroluminescent properties of these molecules have been probed. Further, natural bond orbital, nonlinear optical materials (NLO), molecular electrostatic potential, and HOMO–lowest unoccupied molecular orbital (LMO) energy analysis have been made by density functional theory (DFT) method to support the experimental results. Hyperpolarizability analysis reveals that the synthesized phenanthrimidazoles possess NLO behavior. The chemical potential, hardness, and electrophilicity index of phenanthrimidazoles have also been computed by DFT method. Photoinduced electron transfer explains the enhancement of fluorescence by nanoparticulate ZnO, and the apparent binding constant has been obtained. Adsorption of the fluorophore on ZnO nanoparticle lowers the HOMO and LUMO energy levels of the fluorophore. The strong adsorption of the phenanthrimidazoles on the surface of ZnO nanocrystals is likely due to the chemical affinity of the nitrogen atom of the organic molecule to Zn(II) on the surface of nanocrystal. Copyright © 2013 John Wiley & Sons, Ltd.     

氮掺杂及水分子吸附碳纳米管电子场发射第一性原理研究

对闭口碳纳米管(CNT)顶端分层掺氮及吸附不同数目水分子体系,运用第一性原理研究了有电场存在时的电子场发射性能.结果表明：掺氮并吸附水分子的CNT结构稳定;外电场愈强、水分子数愈多,体系态密度(DOS)向低能端移动幅度愈大且最高分子占据轨道(HOMO)/最低分子空轨道(LUMO)能隙愈小.吸附能,DOS/LDOS,HOMO/LUMO及其能隙分析一致表明,第三层氮掺杂CNT吸附不同数目水分子体系的场发射性能最佳. 关键词： 氮掺杂 水吸附 密度泛函理论 电子场发射     

Tuning HOMO–LUMO levels: trends leading to the design of 9‐fluorenone scaffolds with predictable electronic and optoelectronic properties

Highest occupied molecular orbital–lowest unoccupied molecular orbital (HOMO–LUMO) tuning is an important consideration in the development of organic‐based semiconducting materials. A study of the specific effects and overall trends for the HOMO–LUMO tuning of a diverse series of 9‐fluorenones by means of extended conjugation and substituent effects is described. Trends were explored in a range of compounds, beginning with structures having highly electron‐withdrawing substituents and progressing to structures having highly electron‐donating substituents. Compounds with an incremental increase in conjugation were also examined. Electrochemical and optical measurements were used to calculate the HOMO–LUMO levels and HOMO–LUMO bandgap (HLG) for each structure. Results from both methods were compared and correlated with the differences in molecular structure. Increasing the electron‐donating character of the substituents was observed to decrease the HLG and increase the energy levels of the HOMO and the LUMO, whereas an increase in the electron‐withdrawing character produced the opposite results. Increasing conjugation decreased the HLG, increased the HOMO energy level, but decreased the LUMO energy level. Spectroscopic evidence of substituent influence on the carbonyl suggests that substituents directly impact the HLG by influencing the availability of nonbonding electrons within the carbonyl, which impacts the probability of an nπ* transition. The data presented not only elaborate on the HOMO–LUMO tuning of 9‐fluorenone systems but also enable the consideration of 9‐fluorenones as analogous models for HOMO–LUMO tuning in other more complex polyaromatic systems such as bifluorenylidenes. These trends may provide insight into developing materials with specifically tuned HLGs and HOMO–LUMO levels for a variety of applications. Copyright © 2011 John Wiley & Sons, Ltd.     

A new approach to analyse H⊗(2h⊕g) Jahn-Teller system for C60

It is now well-known that electron (hole)-vibron coupling and hence Jahn-Teller (JT) effect is important understanding the properties of C₆₀ and related molecules. In this paper, we study H(2) coupling case to find the potential energy surfaces for the positively charged C₆₀ molecule due to distortion. The H(2) Jahn-Teller system is of particular importance as this will be the JT effect displayed by C₆₀ molecules removed with an electron. C₆₀ ⁺ is obtained by removing one electron from fivefold degenerate H_u highest occupied molecular orbital (HOMO) and a hole in HOMO interacts with the vibrational modes of C₆₀ and symmetry is broken. We apply the method of symmetry breaking mechanism to obtain expressions for the potential energy surface. Received 27 December 1999 and Received in final form 15 May 2000     

Structural and electronic properties of heterofullerene C59P

Single P-doped heterofullerene C₅₉P is investigated via semiempirical and density functional theory calculations. Static geometric optimization shows that structural deformation occurs in the vicinity of the dopant atom and gives rise to P-C bonds significantly larger than the ordinary C-C bonds of the fullerene cage. The HOMO and LUMO lie in the middle of the energy gap of the undoped system. Unlike the HOMOS and LUMOs of C₅₉Si and C₅₉N, which are strongly localized on the dopant site, the C₅₉P HOMO and LUMO are weakly localized on the environment of the dopant site. To a first good approximation the dopant P can be considered in the 1 + charge state.     

Significant improvement of OLED efficiency and stability by doping both HTL and ETL with different dopant in heterojunction of polymer/small-molecules

This paper reports that the polymer/organic heterojunction doped light-emitting diodes using a novel poly-TPD as hole transport material and doping both hole transport layer and emitter layer with the highly fluorescent rubrene and DCJTB has been successfully fabricated. The basic structure of the heterostructure is PTPD/Alq₃. When hole transport layer and electron transport layer are doped simultaneously with different dopant, the electroluminescence quantum efficiencies are about 3 times greater than that of the undoped device. Compared with undoped device and conventional TPD/Alq₃ diode, the stability of the doping device is significantly improved. The process of emission for doped device may include carrier trapping as well as F\"{o}rster energy transfer.     

注硅半绝缘GaAs的深能级

用深能级瞬态谱(DLTS)详细研究了硅离子注入Liquid-encapsulated Czochralski(缩写为LEC)半绝缘GaAs的深中心。结果表明,在注硅并经高温退火的有源区中观测到4个多子(电子)陷阱,E₀₁,E₀₂,E₀₃和E₀₄。它们的电子表观激活能分别为0.298,0.341,0.555和0.821eV。其中E₀₄与EL2有关,但不是EL2缺陷。E₀₄的电子 关键词：