高离化金和铅离子双电子复合速率研究

基于多组态准相对论自洽场方法和扭曲波方法,理论研究了类铍金和 铅离子三类双电子复合过程,计算了这些离子在电子温度0.6～10.0keV范围内的双电子复合速率系数,并讨论了它们随电子温度、复合类型及原子序数的变化。     

类铍钛离子态-态双电子复合速率研究

研究了类铍Ti18+离子三类态-态双电子复合过程,基于多组态准相对率自洽场方法和扭曲波方法,计算了该离子在电子温度 0.01~1.0keV范围内的态-态双电子复合速率系数,并讨论了它们随电子温度、复合类型和上下能态的变化。     

高离化金和铅离子双电子复合速率研究

 基于多组态准相对论自洽场方法和扭曲波方法,理论研究了类铍金和 铅离子三类双电子复合过程,计算了这些离子在电子温度0.6～10.0keV范围内的双电子复合速率系数,并讨论了它们随电子温度、复合类型及原子序数的变化。     

类铍钛离子态-态双电子复合速率研究

 研究了类铍Ti¹⁸⁺离子三类态-态双电子复合过程,基于多组态准相对率自洽场方法和扭曲波方法,计算了该离子在电子温度 0.01~1.0keV范围内的态-态双电子复合速率系数,并讨论了它们随电子温度、复合类型和上下能态的变化。     

W^71＋离子态—态双电子复合速度系数的计算

基于Ｃｏｗａｎ相对论多组态ＨＦＲ程序，计算了高离化类锂钨离子在０．１－９ｋｅＶ能量范围内，对应于Δｎ＝０．１的态－态双电子复合速率系数。讨论了速率系数随电子温度，复合类型及中间双激发态中俘获电子的主量子数的变化。     

W~（71＋）离子态─态双电子复合速率系数的计算

基于Ｃｏｗａｎ相对论多组态ＨＦＲ程序，计算了高离化类锂钨（Ｗ７１＋）离子在０．１～９ｋｅＶ能量范围内，对应于△ｎ＝０，１的态─态双电子复合速率系数。讨论了速率系数随电子温度，复合类型及中间双激发态中俘获电子的主量子数的变化。     

Xe8+离子双电子复合速率系数的理论研究

利用基于全相对论组态相互作用理论的FAC程序包, 详细研究了温度在0.1~1650 eV范围内Xe8+离子的双电子复合(DR)过程。 通过比较4s, 4p和4d壳层电子激发的双电子复合速率系数, 发现温度在10 eV以上时, 内壳层4p电子激发的双电子复合速率数对总双电子复合速率系数有很重要的贡献, 而4s电子激发对总双电子复合速率数贡献小于7.5%。 给出了△n=0, 1和2 三类芯激发对总双电子复合速率系数的贡献以及自由电子俘获到不同主量子数的双电子复合速率系数, 发现△n=2的芯激发和n′＞15的DR速率系数对总DR速率系数的贡献也很重要。 进一步给出了△n=0, 1和2 三类芯激发和总DR速率系数的拟合参数, 拟合结果和计算值符合, 偏差小于1%。 通过对双电子复合、 辐射复合以及三体复合速率系数的比较得知, 在温度高于1 eV时, DR过程是Xe8+离子的主要复合过程。Based on the fully relativistic configuration interaction method, theoretical calculations are carried out for the dielectronic recombination (DR) rate coefficients of Xe8+ ions in the temperature region from 0.1 to 1 650 eV. The comparison of the DR rate coefficients from 4s, 4p and 4d subshell excitations shows that 4d subshell excitation dominates in the whole temperature region. The contribution from 4p subshell excitation is very important at temperature above 10 eV and the contributions from 4s subshell excitation is lower than 7.5% in the whole temperature region. Similarly, the comparison of the DR rate coefficients through △n=0, 1 and 2 core excitation shows that the contribution from △n=2 core excitation can not be neglected, the contributions from n′＞15 can also not be neglected. The DR rate coefficients of △n=0, 1 and 2 core excitation and the total DR rate coefficients are fitted with some parameters, which are in good agreement with theoretical calculations values (within 1% difference). The total DR rate coefficients are greater than radiative recombination (RR) and three body recombination (TBR) rate coefficients at temperature above 1 eV. Therefore, the DR process can strongly influence the ionization balance of laser produced xenon plasmas.     

W44+ 离子双电子复合速率系数的理论研究

利用全相对论组态相互作用方法,详细研究了W44+ 离子从基组态3s23p63d104s2俘获一个电子形成双激发态(3s23p63d104s2)nln′l′(n = 4 ~ 6,n′= 4 ~7) 的双电子复合(DR) 过程。通过比较不同壳层电子激发的DR 速率系数,得知4s 电子激发和3d 电子激发的DR 速率系数分别在低温和中高温度时给出了主要贡献,得到了主要的电子激发DR通道。在1 eV~50 keV 温度范围内,计算了n = 4~18 的DR速率系数,并外推到了n= 100,得到总DR 速率系数。比较总DR 速率系数、三体复合(TBR) 以及辐射复合(RR) 速率系数,结果表明DR 速率系数在研究的温度范围内远大于TBR 和RR 速率系数,其将明显地影响ITER 等离子体的电离平衡和离化态布居。Based on the fully relativistic configuration interaction method, theoretical calculations are carried out to research the dielectronic recombination (DR) processes, in which W44+ ions in the ground state 3s23p63d104s2 trap an electron to form doubly excited states (3s23p63d104s2)nln’l’(n =4~6,n′= 4~7). The comparison of the DR rate coefficients of different shells shows that DR approach is as follow: the 4s subshell excitation dominates to DR at low temperature, but 3d subshell excitation attributes to DR at high temperature. Total DR rate coefficients from n=4~18 are evaluated directly, and the results are extrapolated up to n = 100 in the temperature range from 1 to 5×104 eV, and thus get the total DR rate coefficients. Compared total DR rate coefficients to three-body recombination (TBR) rate coefficients and radiative recombination (RR) rate coefficients, it showed that the total DR rate coefficients obviously significantly greater than other two recombination rate coefficients, and thus it obviously influence ionization equilibrium and ionization state population of ITER plasma.     

高离化态Hg和U离子的双电子复合过程的理论研究

在相对论多组态Dirac-Fock理论基础上,利用近期发展的计算双电子复合截面的程序,系统研究了高离化态类氦到类硼Hg和U离子的KLL双电子复合过程. 讨论了Breit效应和量子电动力学(QED)效应对Hg离子共振双激发态能级的贡献,得到了双激发态的共振能、总线宽和相应的双电子复合共振强度,所得结果与其他理论和实验结果都符合得很好. 在此基础上进一步研究了高离化态U离子的KLL双电子复合过程,并与已有的实验和理论结果作了比较. 关键词： 双电子复合 MCDF     

高离化态Hg和U离子的双电子复合过程的理论研究

在相对论多组态Dirac-Fock理论基础上，利用近期发展的计算双电子复合截面的程序，系统研究了高离化态类氦到类硼Hg和U离子的KLL双电子复合过程. 讨论了Breit效应和量子电动力学(QED)效应对Hg离子共振双激发态能级的贡献，得到了双激发态的共振能、总线宽和相应的双电子复合共振强度，所得结果与其他理论和实验结果都符合得很好. 在此基础上进一步研究了高离化态U离子的KLL双电子复合过程，并与已有的实验和理论结果作了比较.     

Au~(34+)离子双电子复合过程的理论研究

复杂结构离子的双电子复合(DR)速率系数在核聚变、极紫外光刻光源等应用研究的等离子体谱模拟中具有重要的价值.利用基于全相对论组态相互作用理论的FAC程序包,详细计算了Au~(34+)离子的双电子复合速率系数.研究分析了激发、辐射通道,组态相互作用,级联退激对DR速率系数的影响.其中,级联退激对DR速率系数的贡献必须予以考虑.对双电子复合、辐射复合以及三体复合速率系数做了比较,在温度大于1 eV范围,双电子复合都大于辐射复合以及三体复合速率系数,相应的DR过程对于等离子体离化态分布和能级布居以及光谱模拟都极为重要.对基态和第一激发态的DR速率系数进行了参数拟合,拟合值与计算值的偏差小于1.73%.研究结果将为复杂结构离子双电子复合过程的进一步研究提供参考.     

Variation of dielectronic satellite intensity factors with n for dielectronic recombination processes in selected lithium—like ions

Satellite intensity factors F^*₂(s→f) have been calculated for the 1s²2s+εl→(1s²3l′nl″)^*→1s²2sml''+hν dielectronic recombination processes of lithium-like V, Cu, Se, Ag and Ba ions. The relevant atomic parameters have been calculated explicitly for all intermediate resonance states |s〉≡|1s²3l′nl″SLJ〉 with n=3－9 in the intermediate coupling scheme. The 1/n³ scaling, which has often been used in extrapolating F^*(s→f) for n≥4, is tested against these values of F^*₂(s→f).     

KLL dielectronic recombination process of He-like to O-like xenon ions

In this work, the KLL dielectronic recombination (DR) processes of highly charged He-like to O-like xenon ions are studied systematically by using a DR program, which is based on the multi-configuration Dirac-Fock (MCDF) method. The KLL DR resonant energies and the corresponding resonant strengths are calculated, asizing especially the effect of the Breit interaction on the DR strengths. The theoretical KLL DR spectra are obtained and compared with the latest experimental results obtained in the Shanghai Electron Beam Ion Trap.     

KLL dielectronic recombination process of He-like to O-like xenon ions

In this work,the KLL dielectronic recombination (DR) processes of highly charged He-like to O-like xenon ions are studied systematically by using a DR program,which is based on the multi-configuration Dirac-Fock (MCDF) method.The KLL DR resonant energies and the corresponding resonant strengths are calculated,emphasizing especially the effect of the Breit interaction on the DR strengths.The theoretical KLL DR spectra are obtained and compared with the latest experimental results obtained in the Shanghai Electron Beam Ion Trap.     

Rapid evaluation for dielectronic recombination rate coefficients of Ni－like ions Gd and Ta

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类铷W37+离子双电子复合速率系数的理论研究

利用全相对论组态相互作用理论方法,研究了类铷W37+离子从基组态3s23p63d104s24p64d经过双激发态(3s23p63d104s24p64d)-1nln′l′(n,n′=4,5)的双电子复合过程,得到了该离子在温度为1~5×104 eV范围内的总双电子复合速率系数。分析比较了不同电子激发的双电子复合速率系数,结果表明:4p电子激发的双电子复合速率系数在低温时给出了主要贡献,而3d的贡献在高温时突出。由于强组态相互作用,两电子一光子跃迁对双电子复合速率系数的贡献不可忽略,其中辐射跃迁4p54d5d5f-4p64f5d的贡献是双激发态4p54d5d5f总的双电子复合速率系数的5%。对双电子复合、辐射复合以及三体复合速率系数的比较表明,在所研究的温度范围内双电子复合速率系数最大。     

The KLL dielectronic recombination processes for highly charged krypton, iodine and barium ions

The KLL dielectronic recombination (DR) processes of ions from highly charged helium-like to oxygen-like krypton, iodine and barium ions are studied systematically in the relativistic distorted-wave approximation with configuration interaction. The KLL DR resonant energies, the corresponding resonant strengths and the theoretical spectra for each highly charged ion species are obtained. The results accord well with other available values. The behaviour of KLL resonant strengths for He-like ions with atomic number Z is analysed.