Messung der Fehlordnungsenergie an abschreckend kondensiertem Kupfer bei tiefer Temperatur

Copper films are produced by quenching condensation on a substrate at low temperature. A stored energy release of 216 cal/mole and a resistivity decrease of 1.8μΩcm are observed during annealing from 20 to 60 °K. In this temperature range the recovery of the films is described by a crystallisation of highly disordered material between small crystallites, which are produced during condensation. About 14 atomic-% of the whole film substance take part in this process. The stored energy-resistivity ratioE/Δ? found is 1.9 cal/g/gm/gWcm in the whole temperature range from 20 to 60 °K. This value is in good agreement with the stored energy measurements on neutron-bombarded copper.     

Magnetotransport and superconductivity of α-uranium

We have measured the electrical resistivity, magnetoresistance and Hall effect on several new single-crystal samples and one polycrystalline sample of α-U. The residual resistivity ratios of these samples vary from 13 to 315. Matthiessen's law appears to hold above the onset of the charge-density wave phase transitions that begin near 43?K, but not below this temperature. Sharp features at all three charge-density wave transitions are observed and the effects of high magnetic fields on them are presented and discussed. The magnetoresistance is anisotropic, reaches 1000% at 2?K and 18?T and does not exhibit Kohler scaling. The Hall coefficient is positive, independent of magnetic field and slightly temperature dependent above about 40?K in agreement with earlier studies. Below 40?K the Hall coefficient changes sign as the temperature falls, varies with field and becomes much more strongly negative at the lowest temperatures than has been reported. Some of our results suggest that a spin-density wave may coexist with the charge-density wave states. Superconductivity is observed in two of our samples; we argue that it is intrinsic to α-U and suggest that it is consistent with a two-band model. Several parameters characterizing the transport and superconductivity of α-U are estimated.     

Explanation of the temperature variation of Hall coefficient of doped bismuth

The Hall effect in single crystals of bismuth doped with tin and lead has been measured in the temperature range 80 to 300 K. An attempt has been made here to explain the observed variations of Hall coefficient with temperature by considering the relative variation of the free carrier concentrations with temperature in different bands in alloys of bismuth in addition to variation of other parameters. Calculations have been made to see the effect of the overlap on Hall coefficient for different values of band overlap. The experimental curves are in satisfactory agreement with the theoretical calculations.     

EuMo_6S_8的超导性、电荷密度波和磁性间的相互影响

我们已观察到在120K时Eu_(1.2)Mo_6S_8的热容量、电阻及霍尔系数的反常规象,并确定为一种马氏体结构的相变特征;这种马氏体结构相变产生于一种模糊的电荷密度波的转变,后者在部分费米面上造成能隙。 费米面出现部分能隙说明了在常压下直10mK不出现超导的原因。高压抑制了电荷密度波的转变。从费米面上状态的超导性和这种转变相互竞争出发,计算得到的超导转变温度对压力的依赖性,与实验结果非常一致。在低温时,临界场随温度的变化非常强烈,这种变化已用Jaccarino-Peter补偿效应进行了解释。在高压时与理论的预言比较,EuMo_6S_8的临界场非常高,至少与现有任何的超导体一样高。压力为14Kbar、温度低于2K时在10T到15T范围内已观察到低场下电阻态到超导态的转变,这就是称之为场诱导超导性的一种新效应。     

Struktur und Widerstand sehr stark gestörter Kupferschichten bei tiefen Temperaturen

Copper and silver films were condensed with admixtures of SiO, LiF, Cu₂O and Fe onto a substrate at 4? K. For a film with 16 atomic-% SiO, electron diffraction pictures at 4? K show a nominal crystallite size of 7 å. This means that, even over small regions, there is no well defined lattice order. Such films have resistivities about 1500 times higher than that of the bulk metal at room temperature. The resistivity decreases on heating. Its temperature coefficient is negative also when the film is cooled again. The films are not so strongly disordered if only 9 atomic-% SiO is admixed. In addition, a dependence on evaporation temperature has been observed. LiF and Cu₂O produce less disorder than SiO. Different interpretations of these observations are discussed. The results with Fe show that solid solutions of high concentration can be obtained by condensing films onto very cold substrates, even when the solution components are only slightly soluble in one another at thermal equilibrium.     

On the empirical correlation between the superconducting Tc and the Hall coefficient

It is shown that the occurence of superconductivity and the sign of the Hall coefficient are correlated in transition and non-transition elements and alloys.     

Zur Supraleitung von Doppelschichten aus Ag/Sn

Superimposed films of Ag and Sn are produced on suitable conditions of condensation, so that diffusion between the layers is prevented (the condensation temperatures of Ag and Sn are 320 ?K and 150 ?K, respectively). Immediately after condensation the films are cooled to liquid helium temperature, and the transition temperatures of superconductivity are measured. These values are in agreement with a phenomenological theory of P. and R.Hilsch for sufficient thick films. Resistance measurements indicate that an alloy of Ag and Sn is formed above 280 ?K. There is only a small shift of transition temperature caused by the alloying process.     

Electrical resistivity of amorphous Sn-Cu alloys

The residual resistivity of amorphous Sn-Cu alloys increases with the Cu-concentration. Both positive and negative temperature coefficients are observed. The positive temperature coefficient and the transition temperature of superconductivity depend linearly on the Cu-concentration and both vanish simultaneously.     

The Hall coefficient and other transport properties of dilute alloys of copper and silver

The low field Hall coefficient of a number of polycrystalline foils of dilute (2%) alloys of copper and silver has been measured in the temperature range 1.5–50°K, and at room temperature. The alloys chosen wereCu-Au andAg-Au (uncharged impurity),Cu Ge andAg-Sn (charged impurity), andCu-Ni andAg-Pd (transition metal impurity). At 20°K and below, the Hall coefficients of the different copper alloys differ widely from each other,Cu-Ge giving the highest (negative) values (up to twice the room temperature value for pure copper), andCu-Au the lowest (down to 0.7 of this value). There are also significant concentration dependences. The silver alloys show corresponding but smaller changes. A relationship, due to Tsuji, gives the Hall coefficient as a function of the Fermi velocityν and the mean curvature 1/ϱ of the Fermi surface, for the case of an isotropic relaxation time. The integrals over the Fermi surface have been numerically estimated using the known Fermi surface and electron velocities. For both Cu and Ag the results agree with the experimental room temperature values, which we take as evidence thatτ(k) for phonon scattering is here close to isotropic. On the other hand, to account for the Hall coefficients of the alloys, it is necessary to assume that the relaxation timeτ varies over the Fermi surface. It is seen that in Cu and Ag the neck regions contribute relatively little toR since both 1/ϱ andν are small there. The main change inR in different alloys arises from the variation in the relative weighting given to the belly regions by different kinds of impurity scattering. A closer analysis shows that the bulges in the Fermi surface of copper in the 〈100〉 directions contribute relatively heavily because of their high positive curvature. The anisotropy ofτ deduced from the Hall coefficient is compared with that deduced from other measurements.     

Thermoelectric properties of Bi-Sb semiconducting alloys prepared by quenching and annealing

Bi_100−xSb_x (x=8-17) alloys were prepared by direct melting of constituent elements, which was followed by quenching and annealing. The synthesis of high-homogeneity alloys was confirmed by X-ray diffraction, differential thermal analyses and electron microprobe analysis. The semiconducting and thermoelectric properties of the samples were investigated by measuring Hall coefficient, electrical resistivity and Seebeck coefficient in the temperature range from 20 to 300 K for both the as-quenched and annealing samples. The properties change gradually with the Sb concentration x, which is attributed to the variation of the energy gap. The Hall mobility was enhanced by annealing, which leads to a small electrical resistivity and a large Seebeck coefficient. Consequently, large values of about 8.5 mW/mK² for the power factor were obtained in the annealed alloys of x=8,12, and 14.     

Messung der Fehlordnungsenergie an abschreckend kondensierten Metallschichten bei tiefer Temperatur

Metal films are produced with a high degree of disorder by quenching condensation. The stored energy release and the resistivity decrease are measured during annealing of Au-, Pb-, and Sn-films from 20 to 60° K and during crystallization of amorphous Sn-films with a 10 atomic-% Cu-content. The results are compared with earlier measurements on Bi-, Ga-, and Cu-films produced by quenching condensation. The energy released during the crystallization of the amorphous films (Bi, Ga, Sn+10 at.-% Cu) amounts to half of the heat of melting. This is in good agreement with calculations ofOriani andLumsden for the disorder part of the entropy of melting. The recovery of the crystalline Cu-, Au-, Pb-, and Sn-films is described by a crystallization of highly disordered atoms to crystallites formed during condensation. About 30% of all atoms of these films are in this highly disordered state.     

Heat treatment effects on the structural and electrical properties of thermally deposited AgIn5S8 thin films

The heat treatment effects on structural and electrical properties of thermally deposited AgIn₅S₈ thin films have been investigated. By increasing the annealing temperature of the sample from 450 to 500 K, we observed a change in the crystallization direction from (420) to (311). Further annealing of the AgIn₅S₈ films at 550, 600 and 650 K resulted in larger grain size in the (311) preferred direction. The room temperature electrical resistivity, Hall coefficient and Hall mobility were significantly influenced by higher annealing temperatures. Three impurity levels at 230, 150, and 78 meV were detected for samples annealed at 350 K. The electrical resistivity decreased by four orders of magnitude when the sample annealing temperature was raised from 350 to 450 K. The temperature dependent electrical resistivity and carrier concentration of the thin film samples were studied in the temperature ranges of 25-300 K and 140-300 K, respectively. A degenerate-nondegenerate semiconductor transition at approximately 180 was observed for samples annealed at 450 and 500 K. Similar type of transition was observed at 240 K for samples annealed at 600 and 650 K.     

Electrical resistivity, Hall effect and superconductivity of some b.c.c. titanium-molybdenum alloys*

The electrical resistivities and the Hall coefficients of a series of body centered cubic Ti-Mo alloys have been measured between 1.1°K and room temperature, in magnetic fields up to 30 kG, and for concentrations of Mo between 7 and 24 atomic per cent. For the lower Mo concentration alloys the resistivities are high (≈ 140 microhm cm), and are slightly larger at 4.2°K than at 300°K. The resistivities decrease with increase of Mo over the entire range of alloy concentrations studied. The Hall coefficients are positive and are appreciably concentration and temperature dependent only below solute concentrations of about 12 atomic per cent Mo. The alloys are all superconducting at liquid helium temperatures, their resistive superconducting transition temperatures increasing with increase of Mo. Atomic ordering and structural transformation, concentration and temperature dependent electronic factors, and spin-disorder scattering are considered as possible explanations for the anomalous concentration and temperature dependence of the resistivity.     

Determination of the normal and anomalous hall effect coefficients in ferromagnetic Ni50Mn35In15 − x Si x Heusler alloys at the martensitic transformation

The magnetization, the electrical resistivity, the magnetoresistance, and the Hall resistivity of Ni₅₀Mn₃₅In_{15 ? x} Si _x (x = 1.0, 3.0, 4.0) Heusler alloys are studied at T = 80-320 K. The martensitic transformation in these alloys occurs at T = 220?C280 K from the high-temperature ferromagnetic austenite phase into the low-temperature martensite phase having a substantially lower magnetization. A method is proposed to determine the normal and anomalous Hall effect coefficients in the presence of magnetoresistance and a possible magnetization dependence of these coefficients. The resistivity of the alloys increases jumpwise during the martensitic transformation, reaches 150?C200 ??? cm, and is almost temperature-independent. The normal Hall effect coefficient is negative, is higher than that of nickel by an order of magnitude at T = 80 K, decreases monotonically with increasing temperature, approaches zero in austenite, and does not undergo sharp changes in the vicinity of the martensitic transformation. At x = 3, a normal Hall effect nonlinear in magnetization is detected in the immediate vicinity of the martensitic transformation. The temperature dependences of the anomalous Hall effect coefficient in both martensite and austenite and, especially, in the vicinity of the martensitic transformation cannot be described in terms of the skew scattering, the side jump, and the Karplus-Lutinger mechanisms from the anomalous Hall effect theory. The possible causes of this behavior of the magnetotransport properties in Heusler alloys are discussed.     

Growth and transport properties of CaFeAsF_(1-x) single crystals

Using self-flux method,we have successfully grown the parent phase of the single crystals of CaFeAsF1-x.The X-ray di?raction indicates good crystallinity.In-plane resistivity shows a bad metallic behavior with a sharp drop of resistivity at about T SDW=119K.This anomaly is associated with the possible spin density wave(SDW)order.Interestingly near T SDW,the resistivity exhibits a cusp-like feature,which may be understood as the strong coupling effect between the electrons and the antiferromagnetic(AF)spin fluctuations.A reduction of fluorine or application of a high pressure will suppress the SDW feature and induce superconductivity.Hall effect measurements reveal a positive Hall coefficient below T SDW indicating a dominant role of the hole-like charge carriers in the parent phase.Strong magnetoresistance has been observed below T SDW suggesting multiple conduction channels of the charge carriers.     

Study under high pressure on the Hall effect in the magnetically ordering Kondo lattice material CeAl2

Measurements of the Hall effect in CeAl₂ have been performed between 1.5 K and 4.2 K under pressures up to 2 GPa. The temperature dependence of the Hall coefficient has been found to show increasingly distinct structure with rising pressure, which is obviously correlated to the magnetic ordering transition in this material. Under pressures exceeding about 1.6 GPa the Hall coefficient changes its sign in the temperature range under consideration.     

Strongly correlated superconductivity in Rh17S15

In this Letter, we report resistivity, susceptibility, heat capacity, and upper critical field studies on a polycrystalline Rh17S15 sample which exhibits superconductivity below 5.4 K. Detailed studies suggest that the superconductivity in this compound arises from strongly correlated charge carriers presumably due to the high density of states of Rh d bands at the Fermi level. Moreover, the Hall coefficient shows a sign change and increases at low temperature before the sample becomes a superconductor below 5.4 K.     

Structural relaxation,metal-to-insulator transition and pseudo-gap in oxygen deficient НоBa2Cu3O7−δ single crystals

The effect of annealing at room temperatures on the conductivity in the basis plane of oxygen deficient HoВа₂Сu₃О_7?δ single crystals, tempered from a temperature of 650 °C is investigated. We determine that during the annealing process an extension of the area of the linear dependence of the resistivity ρ_ab(T) occurs. A shift downwards of the temperature interval corresponding to the metal-to-insulator transition and a considerable transformation of the form of the resistivity transfers to the superconducting state was observed. The absolute value of the temperature that the pseudo-gap regime commences is reduced by about 20 K. The results are attributed to labile oxygen ordering without changing the concentration of oxygen in the sample. The estimation of the cluster sizes is characterized by the differences in oxygen content. We perform a comparative analysis between the experimental data with the predictions of the high temperature superconductivity cluster theory.     

Magnetic susceptibility and superconductivity of (Pb<Subscript>0.2</Subscript>Sn<Subscript>0.8</Subscript>)<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>In<Subscript>x</Subscript>Te alloys as a function of in content

Experimental data on the superconductivity of In-doped Pb_zSn_1?zTe alloys (z=0.2) are discussed. The superconducting transition was detected from simultaneous measurements of the resistivity and magnetic susceptibility of a series of samples with different indium contents (2–12 mol % InTe). The superconducting transition detected by the magnetic susceptibility was observed at a temperature which was, on the average, 0.1 K below that determined from the resistivity. The increase in the superconducting transition temperature T _c with increasing indium content is of a threshold character, with T _c being proportional to the inverse electronic density of states at the Fermi level. The observed features in the experimental data are accounted for in terms of indium impurity resonance states in the material.     

Fe1.01Se0.4Te0.6单晶的超导电性研究

本文采用自助溶剂法生长得到Fe1.01Se0.4Te0.6单晶样品,超导零电阻温度Tczero=11.0 K,部分样品经400℃进行48小时退火之后,超导零电阻温度变为Tczero=7.0K.分析表明退火后样品的Fe含量变大,超导电性被部分抑制.通过磁场下电阻率-温度曲线的实验测量,用WHH(Werthamer-Helfand-Hohenberg)方法估算得到退火前后样品在0K附近的上临界场分别为83.2T和61.3T.上临界场μ0Hc2(T)随温度变化曲线在0T附近向高温方向上翘,说明样品具有"二流体"行为.直流磁化曲线在40K和120K分别出现向下弯曲,40K处的变化可能对应于过量Fe的自旋冻结.应变测量结果显示样品在117K时应变值发生一个突变,变化量约为晶格参数的0.06%,显示样品发生一个结构相变.因此,120K处的磁化下降对应于样品从四方相到正交相的结构转变.