CdTe太阳电池的不同背电极和背接触层的特性研究

用Ni替代Au来作为CdTe太阳电池的背电极，比较了Ni,Ni/Au,Au/Ni及Au背电极对电池性能的影响.发现Ni作为背电极和ZnTe/ZnTe:Cu复合层接触，电池的开路电压V_oc略有降低，填充因子FF有增有减，变化幅度不大，但因短路电流I_sc有较大的提高，转换效率η平均增长4％.测试了不同背电极的CdTe太阳电池的暗I-V和C-V特性，对背电极剥离后的样品进行了XPS测试分析.结果表明，Ni扩散到ZnTe/ZnTe:Cu复合层的深度比Au多，且大多呈离子态，与ZnTe/ZnTe:Cu复合层中的富Te离子形成Ni_xTe，提高了掺杂浓度，使电池性能获得改善. 关键词： 金属背电极 复合背接触层 转换效率 CdTe太阳电池     

高反射率p-GaN欧姆接触电极

根据光学薄膜原理计算了GaN/Ti/Ag、GaN/Al和GaN/Ni/Au/Ti/Ag、GaN/Ni/Au/Al多层电极结构的反射率,得出Ag基和Al基反射电极均能在全角范围内提供较高的反射率。实验测量结果表明,反射率能高于80%的Ag基反射电极,具有低欧姆接触的电学特性。并将GaN/Ni/Au/Ti/Ag多层反射电极应用在上下电极结构的GaN基LED中。实验上采用两步合金法获得了低接触电阻、高反射率的电极结构,并引入Ni/Au覆盖层克服了Ag高温时的团聚和氧化现象。解决了Ag电极的稳定性问题,显著地提高了LED的出光效率,成功制备了具有上下电极结构的GaN基LED管芯。     

Diffusion behaviour of Au/Ni bilayers deposited by electron beam evaporation and sputtering onto massive copper substrates

We have studied the diffusion behaviour of Au/Ni bilayers deposited onto massive copper substrates by electron beam evaporation and sputtering. The structure of the gold films is characterized by transmission electron microscopy. The diffusion of Ni through Au and of Cu through the Au/Ni bilayer is controlled by Auger spectroscopy using the method of the “first arrival”. Diffusion annealings were performed between 300 and 400 °C. The results are discussed in relation with the structure of the films. It appears that a small deposition rate favours single crystal areas in the deposited film and consequently makes a more effective diffusion barrier.     

Growth and sacrificial oxidation of transition metal nanolayers

Growth and oxidation of Au, Pt, Pd, Rh, Cu, Ru, Ni and Co layers of 0.3-4.3 nm thickness on Mo have been investigated with ARPES and AFM. Co and Ni layers oxidize while the Mo remains metallic. For nobler metals, the on top O and oxidation state of subsurface Mo increase, suggesting sacrificial e⁻ donation by Mo. Au and Cu, in spite of their significantly lower surface free energy, grow in islands on Mo and actually promote Mo oxidation. Applications of the sacrificial oxidation in nanometer thin layers exist in a range of nanoscopic devices, such as nano-electronics and protection of e.g. multilayer X-ray optics for astronomy, medicine and lithography.     

Solder with discontinuous melting point in semiconductor laser arrays and stacks

High power semiconductor laser arrays must be mounted in the epitaxy-side down configuration for good heat transfer and so require a well-controlled solder. Selection of solder is very important in semiconductor laser arrays and stacks. Usually, the solder consists of two layers. The outer layer prevents In from oxidation. A new type of solder with several layers of Au between the two layers of In was made, which constitutes of multi-layer of W/Ni/Au/In/Cu. In packaging, the Au layer in the solder does not melt. Quick temperature decrease can avoid expansion of the solder. The solder cannot oxidize during packaging.     

Hyperfine structure of highly charged ions

¹⁹⁷Au Mössbauer spectra from Au/TM (TM = Fe, Co, Ni) multilayers consist mainly of two components. One component shows a large hyperfine magnetic field due to the hybridization at the interface between Au and ferromagnetic layers. The other component is nonmagnetic arising from the middle part of the Au layers. From the fractional area of the magnetic components in each spectrum, the Au atoms in 0.4 nm Au layers are perturbed by the Fe and Ni layers, and Co layers perturb 0.3 nm Au layers at the interface.     

用光电子能谱研究CdTe太阳电池的背接触特性

CdTe太阳电池的背电极须采用高功函数金属。通过采用光电子能谱(XPS)分析了高功函数金属Au和Ni分别作为背电极的CdTe太阳电池背接触特性,发现在背电极剥离后,Au在ZnTe/ZnTe∶Cu背接触层表面以Au单质形式存在,扩散深度较浅;Ni扩散到ZnTe/ZnTe∶Cu复合层的深度比Au大,且大多呈离子态,与ZnTe/ZnTe∶Cu复合层中的富Te离子形成Ni_xTe,提高了掺杂浓度,使电池性能获得改善。在两样品中还发现,不论是Te的峰还是Zn的峰,其峰的位移变化都很小,说明两样品中Te和Zn的存在形式没有发生变化。     

Thermal desorption spectroscopy of Ni,Cu, Ag and Au from W(110)

Ni, Cu, Ag and Au on W(110) in the submonolayer range are studied by thermal desorption spectroscopy with the goal of obtaining information on lateral interactions and on the phase state of the adsorption layer in the temperature range in which desorption occurs. Ni, Cu and Ag are found to desorb over a wide coverage range from the two-phase (vapor-condensate) region while Au desorbs only from the single-phase vapor region. Segments of the coexistence curve are determined. The desorption energies have the following limiting values: 4.35–4.95. 3.2–3.85, 2.8–3.55 and 3.3–4.1 eV for Ni, Cu, Ag and Au, respectively.     

Qualitative electroless Ni/Au plating considerations for the solder mask on top of sequential build-up layers

Advanced printed circuit boards (PCBs) with sequential build-up (SBU) layers require alternating dielectric and copper layers on top of a core substrate. This can be achieved by lamination of resin coated copper (RCC) or by coating of dielectric polymers followed by copper deposition. The plating of electroless Ni/Au used as a solderability preservative on top of sequential build-up layers is investigated. For this application a solder mask polymer has to be applied in order to separate solder pads. Experiments showed that on parts of the underlying build-up layer exposed to the electroless Ni plating solution electroless Ni can grow. This overplating is caused by the remains of colloidal Pd/Sn catalyst on top of the build-up layer from preceding electroless Cu deposition. At very small features skipping of the plating can also take place. The overplating and skipping phenomena are influenced by a number of parameters, such as the temperature, the concentration of the stabilizer and pH. The dimensions of features on the board and the thickness of the solder-mask polymer also influence skipping. Based on qualitative analyses of the skipping and overplating phenomena rules of thumb for the solder mask design based on the plating conditions are proposed.     

197Au Mössbauer study of Au/Ni artificial multilayers

¹⁹⁷Au Mössbauer measurements have been performed at 16 K on the Au/Ni artificial multilayers having three different thickness of the layers those are 10Å Au/10Å Ni, 30Å Au/30Å Ni and 53Å Au/53Å Ni on a 250Å pure Au buffer layer. Mössbauer spectra obtained can be decomposed into mainly two components. One is an unperturbed component having an identical isomer shift value to the bulk Au metal. The other is the component perturbed strongly by the Ni layer indicating a broad contribution at positive velocity side and its intensity depends on the thickness of the Au layer. The spectrum from 10Å Au/10Å Ni multilayer is an entirely perturbed one and its area ratio to the component rising from pure Au buffer layer indicates the large Debye-Waller-factor suggesting the supermodulus effect in this multilayer.     

Study of nanoclusters growth at initial stages of ultrathin film deposition by kinetic modeling

Comparative analysis of Au, Cu, Pt, Ni and Fe nanoclusters growth on amorphous carbon substrate by proposed kinetic model based on rate equations is present. Partial sticking coefficients introduced into the model let to discriminate elementary processes such as adatom adsorption and diffusion on bare substrate and on top of islands, nucleation and mobility of islands and its coalescence, 2-d and 3-d island growth modes. The quantitative fittings of experimental time dependencies of surface coverage, clusters density, cluster size are performed by solving model equations. From the best fittings the values of phenomenological coefficients defining elementary processes are found for different materials. Comparative analysis of those coefficients let to discover mechanisms of nanoclusters formation and growth of different materials. It is shown that clusterization for Cu and Au is more favorable than for Pt and Ni. Diffusivity for Pt and Ni on amorphous carbon (a-C) substrate is significantly less than for Au and Cu. In opposite, diffusivity on the top of islands for Ni and Pt is significantly higher than for Au and Cu. The mobility of islands for Au and Cu is much higher than for Ni and Pt. The fitting of experimental curves of Fe deposition on a-C at different temperatures showed that temperature mainly influences sticking process but not diffusion.     

A rutherford scattering study of the diffusion of heavy metal impurities in silicon to ion-damaged surface layers

Rutherford backscattering of 1.75 and 2 MeV ⁴He⁺ ions has been utilized to study the high temperature gettering of Fe, Co, Ni, Cu and Au from silicon by ion-damaged surface layers. In a typical experiment a metal film was evaporated onto one side of a silicon wafer (125 microm thick) which had received ion implantation damage (10¹⁶/cm² Si⁺ ions at 100 keV) on the opposite side; the wafer was then annealed at 900°C, usually for 30 min. The results of such experiments show that the metals studied may be divided into two classes, those which are gettered slowly - Fe, Co, and Au, and those gettered rapidly - Cu and Ni. Fe, Co, and Au were found at levels of 1×10¹³?1×10¹⁴/cm² in the damaged layer, whereas Cu and Ni appeared at levels of 6×10¹⁴ to 5 ×10¹⁶cm². The gettered level of Au, one of the “slow” group, was increased ten-fold by an equal increase in the anneal time to 300 min. The gettered Cu and Au exhibited double peaks in the scattered ion spectra, corresponding to metal concentrated at the most heavily damaged region (end of range for Si implant) and also at the outer surface, with a separation of ~ 1300 Å. A simple model is proposed to explain the slow and fast gettering, based on published interstitial diffusivities and solubilities of the five elements studied.Rutherford scattering has proven to be well suited for the quantitative identification of low levels of impurities on Si surfaces and for impurities gettered at damaged layers close to the surface.     

The role of the covalent interaction in the formation of the electronic structure of Au- and Cu-intercalated graphene on Ni(111)

A study is reported of the role played by covalent interaction in the coupling of graphene formed on Ni(111) to the Ni substrate and after intercalation of Au and Cu monolayers underneath the graphene. Covalent interaction of the graphene π states with d states of the underlying metal (Ni, Au, Cu) has been shown to bring about noticeable distortion of the dispersion relations of the graphene electronic π states in the region of crossing with d states, which can be described in terms of avoided-crossing effects and formation of bonding and antibonding d-π states. The overall graphene coupling to a substrate is mediated by the energy and occupation of the hybridized states involved. Because graphene formed directly on the Ni(111) surface has only bonding-type occupied states, the coupling to the substrate is very strong. Interaction with intercalated Au and Cu layers makes occupation of states of the antibonding and bonding types comparable, which translates into a weak resultant overall coupling of graphene to the substrate. As a result, after intercalation of Au atoms, the electronic structure becomes similar to that of quasi-free-standing graphene, with linear dispersion of π states at the K point of the Brillouin zone and the Dirac point localized close to the Fermi level. Intercalation of Cu atoms under the graphene monolayer results, besides generation of covalent interaction, in a slight charge transport, with a partial occupation of the previously unoccupied π* states and the Dirac point shifted by 0.35 eV toward increasing binding energy.     

面心立方金属声子色散曲线的数值模拟

把分析型嵌入原子法（AEAM）和晶格动力学理论相结合,在三维布喇菲晶格振动模型的基础上模拟了面心立方金属Au、Ag、Pt、Cu和Ni沿[00ζ]、[0ζζ]、[ζζζ]和[0ζ1]4个对称方向的声子色散曲线.结果表明：模拟曲线与实验点线符合的较好,特别在低频附近二者几乎一致,而在纵波模（L）q=（001）2π/a,q=...     

Synthesis of bimetallic systems using replacement reactions

Series of bimetallic systems were prepared by replacement reactions and characterized by XRD and XPS. The results suggest that the ad-metals are monolayer dispersed on the surface of sub-metal in Pd(Pt, Cu)/Co(Ni) systems, while in Pd(Pt, Au)/Cu systems surface solid solution is formed. In Ag(Au)/Co(Ni) and Ag/Cu systems no interaction between the metals is observed just as in the simple mixture of the respective crystallites. The outermost electronic configurations, the atomic radius of the metals, and the low-preparation temperature seem to be important factors for the different states of these bimetallic catalysts.     

脉冲激光沉积的金属原子团簇的电子状态及生长的研究

 介绍了采用X射线光电子谱(XPS)等技术研究脉冲激光沉积在Ni、Mo、C、NaCl(100)表面的Cu、Au原子团簇的电子状态;结合Cu₂p_3/2 X射线光电子谱峰和Cu L₃M_4,5M_4,5俄歇跃迁分离了电子结合能的初态和终态贡献,得出了它们随Cu表面浓度变化的关系,并对之作出了解释。使用XPS、RBS、TEM三项技术研究了Au在NaCl(100)表面的生长过程,通过计算得出了在不同表面浓度下Au原子团簇的平均高度和表面覆盖率。     

Angular dependence of the in-plane magnetization of (100) Cu/Ni/Cu structures

(100) Cu/Ni/Cu sandwich structures have been deposited on (100) Si using the (100) Cu epitaxially grown as the seed layer. The in-plane epitaxial relation between the metal films and Si allows the study of angular dependence of the magnetization for the field parallel to the film plane. Keeping the Cu layers at 1000 Å each and varying the Ni layers between 50 and 1000 Å, the magnetization along the [110] edge is larger than that along the [100] one. This is observed for both structures with a Ni thickness of 1000 and 500 Å, respectively. For the thinner Ni layers, the angular dependence is interfered by the reversal in magnetic anisotropy reported earlier. For such structures, a squared hysteresis loop is observed for the field perpendicular to the film plane, whereas one with little loop is observed for the in-plane magnetization. The angular dependence observed for the 1000 and 500 Å Ni films is the same as that of single crystal Ni. The (100) Cu/Ni/Cu films thus grown can be used for other magnetic measurements in the exploration of two-dimensional magnetism with controlled orientations.     

Magnetostatic interaction in electrodeposited Ni/Au multilayer nanowire arrays

Ordered Ni/Au multilayer nanowire arrays are successfully fabricated inside the nanochannels of anodic aluminum oxide template by pulse electrodeposition method. The thickness of the alternating layers is controlled to examine the magnetostatic interaction in Ni/Au multilayer nanowires. The magnetic easy axis parallel to the nanowires indicates that here the magnetostatic coupling along the wire axis dominates over the interactions perpendicular to the nanowires. However,the magnetostatic interaction between adjacent nanowires with larger magnetic layers is enhanced, leading to the existence of an optimum coercivity value.     

Comparative investigation on decorating carbon nanotubes with different transition metals

The diffusion dynamics and structure evolvement of the transition metal (TM=Ni, Cu, Au, and Pt) atoms decorating carbon nanotubes (CNTs) with differences have been systematically studied by Monte Carlo (MC) simulation. The studies show that TM atoms can be encapsulated inside, aggregated and even wrapped on the surface of the CNT, which depend on the interactions among TM–TM and TM–C during the spontaneous diffusion process. The decorating effect is greatly influenced by the diameters of CNTs, TM atoms tend to be encapsulated inside the tube in the relatively large CNTs, while they are inclined to stack on the surface for the small ones. More interestingly, Au and Pt atoms would wrap around the smaller CNT, whereas Ni and Cu atoms are still clustering outside of the CNTs with the increase of the number of TM atoms. Simulation results indicate that Pt and Au possess a better wetting effect with CNT than Ni and Cu.     

Improvement of interfacial adhesion in vertical GaN-based LEDs by introducing O2 plasma cleaning and intermediate layers

Interfacial adhesion between an indium tin oxide (ITO)/Ni/Ag/Ni/Au p-electrode, and Au and Ni/Au seeds in vertical GaN-based light emitting diodes (LEDs) was enhanced by O₂ plasma cleaning treatment of the Au surface in the p-electrode. However, AES and REELS analyses of the Au surface in the p-electrode detected surface damage to the p-electrode and photoresist (PR) passivation structure from O₂ plasma cleaning. W/Ni and Al/Ni adhesion layers were introduced in the Au seed to increase interfacial adhesion between Au seed and untreated PR passivation. Forward leakage current as low as 0.91 nA at 2 V was observed for the vertical LED with the Al/Ni/Au seed, for which adhesion strength to O₂ plasma-cleaned Au and untreated PR was 141.2 MPa and 62.8 MPa, respectively.