Infrared photoluminescence from TlGaS2 layered single crystals

Photolimuniscence (PL) spectra of TlGaS₂ layered crystals were studied in the wavelength region 500‐1400 nm and in the temperature range 15‐115 K. We observed three broad bands centered at 568 nm (A‐band), 718 nm (B‐band) and 1102 nm (C‐band) in the PL spectrum. The observed bands have half‐widths of 0.221, 0.258 and 0.067 eV for A‐, B‐, and C‐bands, respectively. The increase of the emission band half‐width, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature are explained using the configuration coordinate model. We have also studied the variations of emission band intensity versus excitation laser intensity in the range from 0.4 to 19.5 W cm^‐2. The proposed energy‐level diagram allows us to interpret the recombination processes in TlGaS₂ crystals. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Slip band growth and dislocation velocities in thin flat crystals of n-irradiated Cu and Cu-30% Zn

Extending earlier work (POTTHOFF ) the dependence of the arrangement and development of slip bands on the thickness of thin flat single crystals of neutron-irradiated copper and Cu-30% Zn orientated for singe glide is studied at room temperature. Distinct differences in the behaviour of thin (20 … 200 μm thickness) and thick (≧ 500 μm thickness) crystals are found. Partly they are connected with the bending stresses in the region of the Lüders band front. The velocities of dislocation groups in the first stages of slip band growth are estimated. The deformation kinetics is discussed in the concepts of viscous glide and nucleation rate of dislocations for both materials.     

Luminescence of crystals of divalent tungstates

Crystals of divalent tungstates are characterized by two main luminescence spectral ranges: a short-wavelength (blue) luminescence band in the range 390–420 nm and a group (often two groups) of longer wavelength (green) bands in the range 480–520 nm. For crystals of calcium, strontium, barium, cadmium, magnesium, zinc, and lead tungstates, it is shown that the wavelength corresponding to the maximum of the blue luminescence band (λ_max) correlates with the melting temperature (T_m) of these compounds. The position of the blue luminescence band is the same (in the range 510–530 nm) for crystals with different divalent cations. Annealing in vacuum and electron irradiation decrease the intensity of both blue and green luminescence bands but do not change the ratio of their maximum intensities. This circumstance suggests that vacancies serve as luminescence quenchers to a greater extent rather than facilitate the formation of emission centers responsible for a particular luminescence band.     

Neodymium ion environment in germanate crystals and glasses

Absorption and fluorescence spectra are presented for neodymium-doped alkali germanate and bismuth germanate glasses and crystals. Narrower spectral components and a shift in intensity distribution toward shorter wavelengths for the composite bands corresponding to the principal neodymium absorption and fluorescence transitions are observed as the radius of the glass modifier ion is increased (Li⁺Na⁺K⁺). These changes in component band width and intensity distribution become more pronounced as the concentration of large radius modifier ion is increased, and result in effectively narrower widths for the fluorescent bands involved in laser emission. Optical spectra for neodymium in a sodium germanate single crystal show broad bands characteristic of those of glasses. Electron microprobe scans reveal non-uniform distribution and clustering of neodymium in alkali germanate crystals. Narrow, temperature sensitive bands similar to those of neodymium in other crystals are found for single crystal and polycrystalline neodymium-doped bismuth germanate, while the glass exhibits broad bands. Substitutional replacement of Bi³⁺ with Nd³⁺ in the bismuth germanate crystal lattice is indicated from the optical spectra but the environment of neodymium in crystalline sodium germanate appears to have only short-range order. The difficulty encountered in introducing neodymium into substitutional positions in alkali germanate crystals may result from the charge difference between neodymium and the alkali cations as well as the oxygen: germanium ratio of these compounds, which favors glass network formation rather than crystallization.     

Fluorescence and amplified emission properties of single-crystal 2,5-bis(4-biphenylyl)thiophene

Ligth amplification properties are investigated for single crystals of commercially available 2,5-bis(4-biphenylyl)thiophene. Depending on growth methods, three kinds of crystals are obtained having different fluorescence spectra in blue-green color. Under optical pumping, their amplified spontaneous emission (ASE) bands appear at different wavelengths. The solution-grown crystal shows ASE bands at λ = 464 and 494 nm which are assigned to the 0–1 and 0–2 transitions, respectively. By contrast, the vapor- and slide-boat-grown crystals show a red-shifted 0–1 band at λ = 496 and a 0–2 band at 520 nm, respectively.     

坩埚下降法生长CaF2单晶的研究

采用坩埚下降法生长了CaF2单晶体,研究了不同条件生长的单晶缺陷和光谱性能.结果表明:当晶体生长过程中进入水等含氧杂质时,所生长的晶体不仅在1500nm附近产生非常宽的OH-两倍振动吸收带,而且在可见-紫外波段也形成强烈的色心吸收带.同时,杂质离子Ce3+的存在也导致晶体出现306nm的吸收带.     

Interference pattern of X-ray waves inside the crystal and its image in vacuum in double-field approximation (II)

The energy flows of the X-ray waves, diffracted in thick crystals in double-field approximation, have been examined. It has been demonstrated that in a symmetric Laue case the energy flows in the upper layers are oriented in the direction of incidence and reflection, whereas in the lower layers they are oriented in the direction of the normal to the entrance surface of the crystal. The formation of pendular bands during diffraction of X-rays in thick parallelepiped and wedge-shaped crystals has been investigated. A method for obtaining pendular bands from such crystals is described.     

Photoluminescence Spectra of GaS0.75Se0.25 Layered Single Crystals

Photoluminescence (PL) spectra of GaS_0.75Se_0.25 layered single crystals have been studied in the wavelength region of 500‐850 nm and in the temperature range of 10‐200 K. Two PL bands centered at 527 ( 2.353 eV, A‐band) and 658 nm (1.884 eV, B‐band) were observed at T = 10 K. Variations of both bands have been studied as a function of excitation laser intensity in the range from 8 × 10^‐3 to 10.7 W cm^‐2. These bands are attributed to recombination of charge carriers through donor‐acceptor pairs located in the band gap. Radiative transitions from shallow donor levels located 0.043 and 0.064 eV below the bottom of conduction band to acceptor levels located 0.088 and 0.536 eV above the top of the valence band are suggested to be responsible for the observed A‐ and B‐bands in the PL spectra, respectively.     

Study of inclusions and growth bands in potassium bichromate crystals grown from aqueous solutions

The nature of inclusions and growth bands in potassium bichromate crystals obtained from aqueous solutions and their formation in relation to growth temperature and supersaturation are investigated. It is observed that impurities present in solution, fluctuations in growth temperature and high growth rates are responsible for their formation.     

Extended and localized electronic states for the undulatorily-graded band-gap model of amorphous semiconductors

A novel approach is taken regarding the theoretical basis for the electronic structure of amorphous semiconductors. For these materials we propose a model displaying intermediate range order with undulations in composition or structure on a scale within the range of validity of the graded band-gap concept. Electronic states well within the allowed bands are determined by a perturbative analysis starting with Bloch states; states near the band edges, by a modification of an effective mass analysis previously developed for monotonically graded mixed crystals. Modulated extended states are deduced from the first analysis; localized states, by the second. We identify the band edges as the loci of the classical turning points of the effective mass functions for the localized states. Thermal activation from the band edge troughs and tunneling between troughs are considered. From the model and analysis it appears possible to explain field-dependent conductivity, to account for the persistence of the optical band-gap on conversion from crystalline to amorphous semiconductors, and to predict sensitivity of electronic properties to doping in some amorphous semiconductors.     

光子晶体多组元缺陷态问题研究

缺陷态光子晶体可以用于制作良好的谐振器、偏振器、滤光器等光学器件,具有重要的应用价值。本文发展了光子晶体缺陷态问题的PG有限元界面问题计算方法,有效地处理了各种不同组元体系、几何结构、界面形状、材料属性以及模态的光子晶体缺陷态问题。数值结果表明,二组元结构单点缺陷对带隙的影响较小,只是使局部范围内的波继续传播而产生一条缺陷带,多点缺陷使一些特定范围内的波可以传播而产生多条缺陷带,线缺陷产生的影响较大,可以使整个禁带消失。结合线缺陷与点缺陷,波导结构中的侧点缺陷可以有效地应用于光子晶体阻带内诱导窄通带或在波导的通带内诱导非常窄的阻带。三组元结构引入了不均匀介质、复杂介质形状以及不同几何结构的缺陷态。通过计算与分析发现Ω₃区域的介质形状对结果影响比较有限,表面层越不光滑禁带越窄,n型缺陷态在TM模中的高频区域更容易产生禁带。对于TE模来说,n型与v型的缺陷态更容易产生禁带。     

不同X射线管电压下CsI和CsI(Tl)晶体的X射线辐照致发光

在室温(290 K)和低温(25 K)下,测量了从11～40 kV的一系列管电压下X射线激发纯CsI和CsI (Tl)晶体的辐照致发光(RL)谱.结果表明:在固定温度下,管电压变化后, 305 nm和340 nm的本征发光带和580 nm的非本征发光带的形状结构均不发生变化,只是其强度发生变化.对所测得的各发光带强度随管电压的变化关系用抛物线模型进行了拟合分析,得到了较好的结果.同时还发现纯CsI和CsI (Tl)晶体中所有本征RL发光带强度与X射线强度基本上成正比关系,而当管电压增加时,CsI (Tl)晶体中非本征发光带强度的增加速度慢于本征发光带.分析认为,290 K时这可能与样品中另一个位于400 nm左右的发光带有关;而在25 K时则可能和H心与VK心的竞争有关.     

Anisotropic optical properties of crystals with the Ca-gallogermanate structure

The optical properties of inactivated and activated crystals with the structure of Ca-gallogermanate have been studied. The components of the gyration pseudotensor for Sr₃Ga₂Ge₄O₁₄ crystals are determined. In the ultraviolet range of the spectra of all the crystals studied, the bands of circular and linear dichroism and the anomalous behavior of the linear birefringence are observed irrespective of the activating dopant. The formation of these bands is not associated with the electron transitions of doping ions and can be caused by structural defects formed in the growth process.     

Photoluminescence from deformed CaO crystals

The plastic deformation of CaO crystals produces the increase of luminescence band centered at 385 nm and 454 nm. The bands are excited with light of 350 nm and 275 nm respectively, and their relative increase depends on the kind of deformation applied to the crystal. The results are compared with previous cathodoluminescence observations.     

非均匀局域共振型声子晶体隔声特性研究

建立局域共振声子晶体单元结构模型,通过有限元方法研究了阵列排布、填充率排列及散射体厚度排列对非均匀声子晶体隔声特性的影响,以期使各类非均匀声子晶体结构在不同频段发挥隔声效果及减少隔声频段内的局部衰减.结果表明,散射体靠近入射方向的阵列排布具有较大的隔声量;填充率由中间列向两端递增的形式下局部衰减情况较少;散射体厚度由中间列向两边减小的排布适合中高频隔声,由中间列向两边增大的排布适合低频隔声;分别由铝振子、钢振子、铅振子构成的声子晶体在低频段具有相似的隔声特性,中高频处的隔声频段随着振子密度的增加向低频段移动.此结果为非均匀声子晶体获得良好降噪效果提供了理论支持.     

The investigation of the kinking process with help of cholesteric liquid crystals

Process of kinking in CsI crystals has been studied with help of CLC (cholesteric liquid crystals) sensitive to deformation and temperature. It is shown that kinking formation is accompanied by local heat in the kink band. The velocity of deformation is the more the larger the quantity of heat in the kink band.     

Stability of Electronic Colour Centres in NaF:Li Single Crystals

The influence of the lithium impurity on the formation and the stability of electronic colour centres is studied in NaF crystals. It is found that F- and M-absorption bands are somewhat displaced to the long wavelengthes when doping with lithium owing to the overlapping with F_A- and M_A-absorption bands. It is shown that the lithium impurity is stabilising one for the charged M-centres though their accumulation in the doped crystals occurs slower. The activation energy is determined for the thermal destruction of M⁺- centres. Thermal destruction of M⁺-centres assumed to be resulting from the anion vacancy removal.     

Photoluminescence from Thermally Treated CaO Single Crystals

Photoluminescence emission and excitation spectra of CaO single crystals change strongly by annealing in air while rapid quenching does not produce new bands. The increase of an excitation band at 340 nm and the shift of the emission peaks are the main annealing effects observed. These changes, which are reduced by increasing the crystal thickness, have been found to be localized in the surface.     

EPR and Optical Absorption Studies of Radiation-Induced Radicals in Biphenyl Single Crystals

Biphenyl single crystals irradiated with γ rays at liquid nitrogen temperature have been investigated by electron paramagnetic resonance and optical absorption experiments. EPR spectra at room temperature exhibit a triplet characteristic separated by 39 gauss and each line of the triplet further splits to a triplet. The main triplet has been interpreted as being caused by hydrogen added biphenyl radicals. The splitting of each line of the main triplet is consistent with the calculated splittings of 2-hydro-biphenyl radicals and 4-hydro-biphenyl radicals. The presence of 3-hydro-biphenyl radicals could not be judged from the EPR spectra due to the broadness of the lines. In the optical absorption spectra at low temperature, obtained with the light polarized to the a-, b- and c'-axes of the crystals, nine bands were detected. Transition energies were calculated using SCF-C1 molecular orbital theory for the three kinds of the hydrogen added biphenyl radicals. By comparing the experimental spectra with the theoretical transitions of the three kinds of radicals, the bands at 666 nm and 424 nm have been assigned to the transitions of 2-hydro-biphenyl radicals, the 660 nm band to that of 3-hydro-biphenyl radicals, and the bands at 604 nm and 598 nm to the ones of 4-hydro-biphenyl radicals. The decays of these radicals at room temperature are very similar and upon annealing a new absorption band appears at 462 nm.     

Optical anisotropy in GaSe

Optical anisotropy of the layer semiconductor GaSe has been studied by photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR). The PL spectra are dominated by two closely positioned emission bands resulting from the free exciton and the bound exciton connected direct band edge of GaSe. Photoluminescence and transmission spectra of GaSe crystals have been measured for two cases in which the propagation vector k is perpendicular (k ⟂ c) and parallel to the c‐axis (k // c). Peak position of the PL emission band and the onset of the transmission have been found to be significantly different for these two cases. This observed anisotropy is related to anisotropic band structure and the selection rules for the optical absorption in layered GaSe. FTIR transmission spectrum is in good agreement with PL results. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)