Absorption and ionic conductivity of oxygen-containing SrF2 crystals

An absorption band at 3644 cm⁻¹ is caused by isolated OH⁻ ions. O⁻ ions cause an absorption band at 213 nm the oscillator strength of which is 0.020. Charge-compensation of O⁻ ions is effected by F⁻ ion vacancies (F). As for CaF₂ crystals there occur monomers and dimers of [O⁻ – F] complexes. The mass action constants of association of F with oxygen centres are K_AD = ⅓ exp (4.28 – 0.82 eV/kT) for [O⁻ – F], K_AT = 4 exp (17.4 – 1.25 eV/kT) for [2 O⁻ – F] and K_AQ = exp (4.2 – 0.89 eV/kT) for [2 O⁻ – 2 F].     

Density and mobility of anti-frenkel defects in SrF2 crystals

By fitting the theoretically calculated temperature-dependent conductivity σ to the measured dependencies log σT ÷ 1/T the following parameters have been determined: free formation enthalpy of anti-Frenkel defects g_AF = 2.05 eV – 6.35 kT; mobilities of F⁻ion vacancies F and interstitials F: v_νT = 600 exp (-0.70 eV/kT) cm² K/Vs, v_iT = 1.1 · 10⁴ exp (-0.93 eV/kT) cm² K/Vs. — The free association enthalpies of complexes consisting of single foreign ions (Sc³⁺, Y³⁺, La³⁺, Sm³⁺, Li⁺, K⁺, Na⁺, O⁻) and the charge-compensating defect were obtained. The vibration frequency of F⁻ ions in the neighbourhood of F and F is changed by a factor of 2.6 and 0.6, respectively.     

Thermoelectric power of indium sesquisulphide single crystals

The investigation covers a temperature range from 200 to 450 K. Thermoelectric power measurements of In₂S₃ crystals showed that all samples under investigation have a positive TEP in all temperature ranges, indicating n-type conductivity for In₂S₃ crystals. The ratio of the electron and hole mobilities is μ_n/μ_p = 4.71. The effective mass of electrons m is found to be 0.00008 × 10⁻³¹ kg. The obtained effective masses of holes m = 1.893 × 10⁻³¹ kg. The diffusion coefficient for both carriers (electrons and holes) is evaluated to be 84.71 cm²/s and 17.985 cm²/s respectively. The mean free time between collision is estimated to be τ_n = 1.7 × 10⁻²⁰s, and τ_p = 8.5 × 10⁻¹⁷s. The estimated diffusion length for electrons is found to be L_n = 1.2 × 10⁻⁹ cm and L_p = 3.9 × 10⁻⁸ cm.     

Paramagnetic centres in X-irradiated LiNaSO4 single crystals

The EPR and optical absorption spectra of paramagnetic centers produced by X-irradiation in LiNaSO₄ single crystals were investigated. 7 EPR lines are observed at room temperature and 6 more lines – at LNT. The angular dependences of line positions at LNT are studied and the principal g-factor values are defined. The comparison with published data permitted to assign six the most anisotropic lines to ion-radical SO with different orientations in the lattice; two lines to ion-radical SO; slightly anisotropic doublet line – to O ozonide ion; isotropic line with g = 2. 0045 – to ion radical SO.     

Defect studies in CuBIIIC chalcopyrite compounds using the ion channeling technique

Based on simple approximations the backscattering minimum yield is estimated for axial ion channeling in perfect crystals of six CuB^IIIC chalcopyrite compounds. The results obtained for CuInSe₂ are compared with experimental channeling spectra. Point defect concentrations up to about 10²¹ cm⁻³ are estimated for CuInSe₂ single crystals grown by the vertical Bridgman method. A simple power law is found for the fluence dependence of the damage density in oxygen implanted CuInSe₂ single crystals.     

Investigations on electronically conducting oxide systems (XI) electrical conductivity and optical absorption of a -and c-Domain crystals BaVTiO3

BaVTiO₃ single crystals can be grown from a basic BaCl₂ flux. The electric conductivity was measured at a- and c-domain crystals and optical absorption as well as photoconductivity were ascertained at a-domain crystals using plane polarized light in dependence on direction. Properties and their anisotropy are discussed on the basis of their local relations in the ferroelectric host lattice and compared with the properties of BaNbTiTiO₃ single crystals described in the preceding communication.     

Hyperfine structure of Cr5+ EPR spectra in X-irradiated potassium halide crystals doped with CrO and Ca2+

The hyperfine structure has been investigated in the EPR spectra of X-irradiated KCl: CrO, Ca²⁺ and KBr: CrO, Ca²⁺ crystals. Preliminarily spectra were simplified by means of heating the crystals up to 400 K for KCl and 440 K for KBr, that destroys the less stable CrO · V centers. It is ascertained, that principal directions of g- and A-tensors do not coincide, and principal A-values are determined. Calculations, making use of the experimental meanings of g- and A-tensor components, showed, that the degree of distortion of oxygen tetrahedra in CrO · Ca²⁺ · V centers is almost the same in both KCl and KBr crystals; besides, these calculations suggest the existence of a strong covalent bonding between the central Cr⁵⁺ ion and four oxygen ligands in CrO ions.     

On the mechanism of chemical polishing of GaAs crystals

In order to establish reproducible conditions for chemical lap polishing of GaAs with NaOCl solutions, containing also OH⁻- and CO -ions, the mechanism of dissolution was investigated using the rotating disk arrangement. In solutions with excess OCl⁻ concentrations likewise diffusion and a reaction of the first order with respect to OH⁻ and CO, complexing agents for Ga-ions, control the dissolution rate, and the surfaces of the wafers are polished. OH⁻ and CO₃^2– concentrations in excess with respect to OCl⁻ lead to rate determining OCl⁻ diffusion and to irregularly polished or film covered surfaces. Diffusion constants for OH⁻, CO and OCl⁻ are given.     

Thermoelectric properties of indium sesquiselenide single crystals

Single crystals of δ-In₂Se₃ were prepared in the solid state laboratory at Qena-Egypt, by means of Bridgman technique. The temperature dependence of the thermal e.m.f. α in the temperature range from 205 K up to 360 K of In₂Se₃ was studied. The δ-phase In₂Se₃ sample appeared to be n-type. The ratio of the electron and hole mobilities are found to be μ_n/μ_p = 1.378. The effective masses of charge carriers are m = 1.3 × 10⁻³⁰, m = 8.27 × 10⁻³¹ kg for holes and electrons, respectively. The diffusion coefficient was estimated to be D_n = 3.37 cm²/s and D_p = 2.45 cm²/s for both electrons and holes, respectively. The mean free time between collision can be deduced to be τ_n = 70 × 10⁻¹⁶ s and τ_p = 8 × 10⁻¹⁴ s for both electrons and holes. The diffusion length of the electrons and holes are found to be L_n = 1.5 × 10⁻⁷ cm and L_p = 4.4 × 10⁻⁷ cm.     

Growth and analysis of barium-sodium niobate crystals

The conditions of growth, monodomenization, and detwinning are considered in order to obtain optically perfect barium–sodium niobate crystals (BSN). Optical homogeneity and that of chemical composition are investigated. It is shown that possible variations of composition in a crystal's volume are below 1%. Thermal E and optical E_g° widths of the forbidden zone are determined in the absorption spectra.     

Thermal expansion anisotropy and individual bond expansion coefficients in ternary chalcopyrite compounds

The individual bond expansion coefficients of the A^IIB^IVC and A^IB^IIIC₂^VI chalcopyrite compounds are calculated from the principal linear thermal expansion coefficients of the lattice parameters using the regular B C tetrahedron model and a model with a temperature independent free parameter of the lattice. It is shown that the bond expansion coefficients derived from the latter model are in better agreement with the trends found for the interatomic forces in the chalcopyrite compounds and observed for the thermal expansion coefficients in the binary AC, A^IIC and BC compounds.     

Sputter depth profiling of GaAlAs double heterostructures using auger electron spectroscopy

Sputter depth profiles of GaAlAs double heterostructures had been taken by the help of Auger electron spectroscopy (AES). The sputtering ion beam consisted of either N⁺ — or Ar⁺ ions. In the case of using N⁺ ions an essentially better depth resolution was found comparing with Ar⁺ ions, especially in a sputter depth of some μm. Investigations of the sputter—crater using Scanning Electron Microscopy (SEM) and Electron Probe Micro Analysis (EPMA) showed, that the improved depth resolution during N ion sputtering is a result of the essential lowered sputter induced surface roughness. This should be caused by the stronger amorphisation of the target surface using N ions which is a consequence of the chemical reactions taking place at the surface with the sputtering ions.     

Surface preparation of AB semiconductors (Cd3As2, Zn3As2, Cd3P2, Zn3P2) under ultra-high vacuum conditions

The UHV surface preparation of AB materials (crystals and thin films) has been monitored with XPS and AES. Clean and stoichiometric surfaces of AB crystals were prepared by means of low energy ion bombardment and subsequent low temperature annealing. Stoichiometric Cd₃As₂ and Zn₃P₂ thin films with very low amounts of C and O were deposited by the evaporation of bulk material in the UHV. The quality of prepared AB crystal and thin film surfaces was sufficient to carry out density of states investigations (UPS, RELS) with success.     

Crystallization and Thermoelectric Power of Tl2Te3 Single Crystals

Thermoelectric power (TEP) of Tl₂Te₃ was measured in the temperature range from 150 to 480 K. The crystal was found to have a p-type conductivity throughout the whole range of temperature. The effective masses of holes and electrons were determined at room temperature and found to be m = 1.1 × 10⁻³⁴ kg and m = 1.72 × 10⁻³⁵ kg, respectively. Also at the same temperature the mobility μ_p was found to be 1737.8 cm²/V.s and μ_n was 3962.2 cm²/V.s. The hole and electron diffusion coefficients were obtained as 44.84 cm²/s, and 102.23 cm²/s. The relaxation times for holes and electrons were calculated and yielded the values τ_p = 1.19 × 10¹² s and τ_n = 4.25 × 10¹³ s, respectively.     

The Growth and Properties of K1-yLiyTa1-xNbxO3 Crystal

Potassium lithium tantalate niobate (K_1-yLi_yTa_1-xNb_xO₃, KLTN) crystals with tetragonal phase at room temperature were grown by the flux pulling method. Two-wave coupling energy transfer has been realized in this crystal. The two-wave coupling gain coefficient measured is 0.46 cm⁻¹, and the sign of the dominant carrier is positive. As compared with potassium tantalate niobate (KTN), the dielectric properties of KLTN changed significantly.     

Magnetic and electric properties of the ternary alloys AB

The results of experimental studies of the electrophysical and magnetic properties of solid solutions based on the AB compounds with anion (Zn₃(P_xAs_1−x)₂ and cation (Zn_xCd_1−x)₃ P₂ substitution are reported. The Zn₃(As_xP_1−x)₂ solid solutions are characterized by p-type conductivity (∼ 10¹⁵  10¹⁷ cm⁻³), low Hall mobility and conductivity of ∼ 10⁻² — 10⁻³ ohm⁻¹ cm⁻¹. In the (Zn_xCd_1−x)₃P₂ solid solutions the samples rich in zinc are p-type, those rich in cadmium — n-type, the carrier concentration is ∼ 10¹⁶ — 10¹⁸ cm⁻³. From the measurements of the magnetic properties of the above mentioned alloys it is shown that in the investigated solid solutions a transition from the structure with direct optical transition to those with indirect optical transition occurs.     

Velocities of Disappearance and Lifetime of Faces of Growing Crystals

The formulae for absolute R_disap and relative R velocities of disappearance and lifetime τ of faces of growing crystals have been derived for stationary growth. It was shown that the quantities are determined by the relative growth velocity R_A/R_critA of the vanishing face A with respect to the critical growth velocity R_critA and by the geometry of a crystal expressed by the trigonometric functions of interfacial angles β and γ formed between face A and the adjacent faces. R increases and τ decreases with the increase in R_A/R_critA to certain limiting values. The calculations have been verified and illustrated by the experimental results for triclinic potassium bichromate (KBC) crystals. Results enable ones to predict values of velocities of disappearance and lifetimes of undesirable, supplementary faces of any real crystal.     

Impurity band conduction effects in liquid phase epitaxial Te-doped GaP grown from tin solution

GaP layers were grown by liquid phase epitaxy from tin solution on semi-insulating GaAs substrates with various amounts of Te added to the melt (x_Te = 10⁻⁴ …︁ 3 · 10⁻²). The Sn and Te concentrations in the layers were determined by chemical analysis as function of x. An analysis of the electrical measurements shows that the carrier transport in the layers is essentially determined by impurity band conduction effects.     

Dependence of the Electric Properties and the Positron Lifetimes on the Dopant Content in La-doped SrTiO3

The resistivity, the dielectric constant, and the positron lifetimes in La-doped SrTiO₃ have been measured for La content x of 0—10 at.%. It was found that with increasing x, the variations of the resistivity and the dielectric constant and the positron lifetime parameters are nonmonotonic. The positron experiments have shown that the La-doping induces mainly formation of Sr vacancies and variation of Sr vacancy configuration; the most probable configuration is the isolated Sr vacancies (V) as x < 0.5 at.%, the associated defects (La V) for 0.5 < x < 1 at.%, and the associated defects (2 La V) above x = 1 at.%. The results suggest that the variation of the resistivity can be regarded as variation of electron density, and the variation of the dielectric constant results mainly from variations of the space-charge polarizaion and Sr-vacancy concentration and configuration.     

The Structure of Metastable Phases in Al?Zn Alloys (II). HREM Investigations on α-Precipitates

Precipitates of the metastable -phase grown in an Al-(6.8 at.%)Zn alloy are investigated by means of a technique of high resolution electron microscopy, namely by two-beam lattice fringe imaging with tilted illumination. It is demonstrated by this direct method that the -precipitates are in fact semicoherent. The transition of fully coherent Guinier-Preston zones into semicoherent precipitates of the -phase takes place by formation of additional (III)^rh and { III }^rh planes inside the zones.