Defects in LEC-grown Indium Phosphide Crystals Doped with Tin

Crystalline defects in Sn-doped LEC indium phosphide have been revealed by chemical etching and analyzed by TEM. Grown-in dislocations, various kinds of defect clusters and colonies of microdefects were found. The symmetrical defect clusters are shown to equate mostly with larger dislocation loops exhibiting shear components and/or other dislocation arrangements generated by a stress source which is positioned in the centre of the dislocation cluster. Those centres are often formed by a plate-like agglomeration composited of tiny inclusions and very small faulted dislocation loops. Such planarly arranged accumulations of microdefects lie on {111} planes. The direct vicinity of single threading grown-in dislocations is always enriched with tiny perfect dislocation loops and precipitates. Additionally, very large isolated interstitial-type perfect dislocation loops with b = a₀/2 〈110〉 have been found by TEM experiments. Mostly, the {110} habit plane of such loops is decorated with an high number of small dislocation loops and precipitates as a consequence of dislocation climb.     

Reflection Splitting in RHEED Investigations of Vacuum Evaporated GaAs Layers

RHEED-diagrams of vacuum deposited GaAs-films with high density of structural defects often show splitting of matrix reflections into satellites. It can be shown by simple models, for example of {111}-oriented films, that this phenomenon is originated by formation of stacking faults perpendicular to 〈ĪĪĪ〉-B growth directions of the films. The conditions for 〈110〉 and 〈211〉 azimuths are discussed.     

The Epitaxial Orientation of Al on Si

It is shown that the epitaxial growth of Al on Si {111} favours the epitaxial relation {111} Si ‖ {100} Al; 〈110〉 Si ‖ 〈110〉 Al instead of the more expected relation {111} Si ‖ {111} Al; 〈110〉 Si ‖ 〈110〉 Al. The elastic energy density of the epitaxial layer in the first case mounts to about 40% of that belonging to the second relation. The calculation of the elastic energy density in both cases is based on the assumption of pseudomorphical epitaxial film overgrowth between deposit and substrate supercells.     

TEM-Untersuchungen von Gitterfehlern in ZnSiP2-Einkristallen

Results are dealt with concerning TEM investigations of lattice defects in ZnSiP₂ single crystals. After the crystal growth dislocations or stacking faults were found in a few cases only. More frequently twins were present in the microstructure. The crystallographic elements of twinning are {112} 〈111〉. After plastic deformation by bending at 900 °C local dislocation arrangements with high defect density (N_v ≈ 10⁶…︁ 10⁷ cm⁻²) were observed. By means of the diffraction contrast one Burgers vector b = 1/2 〈111〉 could be identified. In some cases the crystals also contained wide deformation stacking faults, which were limited by partial dislocations. The density of twins was not increased under the conditions of deformation reported here. As it can be concluded from investigations of Oettel et al. and from the results of the twin analysis, slip and generation of stacking faults take place on {112}-planes in ZnSiP₂ crystals. Crystallographic considerations on both processes are dealt with.     

Microplasticity of CsI crystals

The study of the mechanisms of plastic deformation of CsI crystals has found the participation of not only the main {110} 〈100〉 slip system but also of the secondary one {110} 〈110〉. Besides that, production and motion of point defects (or small prismatic loops) take place. The gliding on secondary slip system and the deformation accounted for by the generation and motion of point defects is facilitated at low temperatures and high deformation rates. The character of the motion and multiplication of dislocations in the main slip system is investigated. From the temperature and stress dependence of the mobility of isolated dislocations quantitative data on the thermally activated motion of edge dislocations on the main slip system have been obtained. It is shown that, as in the case of other alkali halides, the thermally activated motion of edge dislocations in CsI crystals on {110} 〈100〉 system is limited by their interaction with local obstacles.     

On Texture Formation at Cold Rolling of Mn-Cu Alloys

The texture formation in quenched γ-phase Mn-Cu alloys at cold rolling have been studied. It was found that the final texture in martensitic Mn-10% Cu alloy consists of nearly equal volume of {001}〈100〉 and {112}〈111 〉 texture components. A sharper {101}〈1 21〉 component in small amounts can be present too. In austenitic Mn-22% Cu alloy the {112}〈111 〉 component is more scattered and weakened, and the strong {101}〈1 21〉 component has formed. In the Mn-30% Cu alloy the {001}〈100〉 component is almost absent, {112}〈111 〉 is very weak and the {101}〈1 21〉 texture is dominated.     

Orientation Relationships and Lattice Misfit between a Nb Matrix and γ-Silicide in a Nb–Si Composite

Crystallography Reports - Orientation relationships {110}Nb||{100}γ and 〈111〉Nb||〈001〉γ between the crystal lattices of the Nb solid solution and particles of...     

Precipitation-induced Dislocations in Crystals of NaCl:Ni

Using the decoration technique, the dislocation structure has been observed in regions localized near precipitates in nickel-doped NaCl crystals. The results are interpreted in terms of the stress-operated mechanism for the generation of prismatic dislocations by the precipitates. Normally only two of twelve possible slip directions operate for 〈110〉 rods. This is accounted for in terms of the climb and disappearance of dislocation loops corresponding to the other directions. {100} plates produce loops spreading along for 〈110〉 directions.     

TEM studies of medium-doses Kr+-implanted silicon

〈100〉 silicon wafers implanted with 300 ke V Kr⁺ ions to the following 5 × 10¹³, 1 × 10¹⁴ and 5 × 10¹⁴ cm⁻² doses were investigated by means of conventional and high voltage transmission electron microscopes. Planar-view technique was applied to characterize primary damage and to determine the geometry and the nature of secondary defects left after the furnace annealing. It is concluded that implantation to the lowest and highest doses, respectively, leads to incomplete and complete amorphicity of entire bombarded region, whereas the intermediate dose forms a burried amorphous layer. Small interstitial Frank dislocation loops on {111} planes are the predominant secondary defects for the range of doses. Occurrence of additional rod-like defects is related to the regions of discontinuous initial amorphicity.     

In situ Observed Twin Formation on ZnSe Crystals Growing by Sublimation

ZnSe crystals were grown by sublimation in closed ampoules between 1335 K and 1365 K. The growth was observed in situ with a video camera after an abrupt change of the supersaturation. The crystals developed preferably {110} faces. Repeatedly a nucleus was formed in ortho-twin position on a small {111} face which truncated the corner of three adjacent {110} faces. The repeated twin formation led to a preferred growth into the relevant 〈111〉 direction. The twinning already occurred at a low supercooling of less than 1 K and accelerated the growth distinctly.     

Microstructure and strain relaxation of orthorhombic TmMnO3 epitaxial thin films

Orthorhombic TmMnO₃ (o-TMO) thin films have been epitaxially stabilized on (110) SrTiO₃ substrates by pulsed laser deposition (PLD) technique. The microstructure and strain relaxation mechanism of o-TMO thin films are analyzed using transmission electron microscopy. It is shown that major defects in the films are misfit dislocations with Burgers vectors of type a_p〈010〉 and a_p〈110〉, whereas a_p〈110〉 dislocations tend to dissociate into partial dislocations with Burgers vectors of type 1/2a_p〈110〉. Strain in o-TMO films is relaxed by misfit dislocations as well as surface fluctuations, which is different from most of the previous studies of the perovskite thin films.     

Twins in CdMnTe single crystals grown by Bridgman method

Cd_1‐xMn_xTe (x =0.2, CdMnTe) crystal was grown by the vertical Bridgman method, which exhibits a pure zincblende structure in the whole ingot. The major defect, twins, which is fatal to CdMnTe crystal, was analyzed with scanning electron microscopy (SEM), X‐ray energy disperse spectroscopy (XEDS) and optic microscopy on the chemical etching surface. The twins observed in the as‐grown ingot are mainly lamellar ones, which lie on the {111} faces from the first‐to‐freeze region of the ingot and run parallel to the growth axis of the ingot. Coherent twins with {115}_t‐{111}_h orientations when indexed with respect to both the twin and host orientations, are often found to be terminated by {110}_t‐{114}_h lateral twins. Te inclusions with about 20 μm in width are observed to preferentially decorate the lamellar twin boundaries. The origin of the twins, relating to the growth twin and the phase transformation twin, is also discussed in this paper. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Microstructures on {111} faces of stannic iodide single crystals

Single crystals of stannic iodide (SnI₄) havebeen grown using the controlled reaction between SnCl₂ and KI by diffusion process in silica gel medium. Orange to reddish octahedral stannic iodide crystals up to 3–4 mm in size have been grown at room temperature. Optical studies have been made on the various surface structures of {111} faces of the asgrown crystals. On octahedral faces of these crystals, triangular-shaped hillocks with growth layers in the 〈110〉 directions have been observed. Occasionally, growth spirals on octahedral faces have also been reported. Close loops of growth fronts have been investigated and have been interpreted. It has been suggested that two-diemensional nucleation, spreading and pilling up of triangular growth layers is mainly responsible for the growth and occasionally the growth is due to screw dislocations. The implications are discussed.     

The Morphology of Hydrothermally Grown Plagioclase

Plagioclase crystals Ab₂₀An₀₀ and nearly pure anorthite were grown on the surface of artificial melts by hydrothermal treatment at 2 kb. The average crystal size was 0.002 to 0.008 mm. In the temperature range of 400° to 600°C a pseudohexagonal habit was observed for anorthite while a lath-like habit due to the prevalence of {010} was found for the Ab₂₀An₈₀ composition. Dominating faces are {010} {130} {110} {100} {110} {130} in the zone [001] and {021} {111} {111} {021} {111} {111} together with {001}.     

Melt Growth of CdTe Crystals and Transmission Electron Microscopic Investigations of their Grain Boundaries

Transmission electron microscopy investigations are carried out on CdTe crystals grown in quartz ampoules in a temperature region (1020–1091 °C) near to the melting point of 1092 °C, by travelling heater method in quasi-closed and in sealed (at 0.135 Pa) volume, and by the Bridgman method from nearly stoichiometric melts. An original method for preparation of CdTe thin foil is reported. Two types of grain boundaries are observed: high-angle misoriented grain boundaries (more than ten degrees misorientation between adjacent grains) and low-angle misoriented grain boundaries (less than one degree misorientation between adjacent sub-grain). Both dislocations with Burgers vector b = a/6 〈112〉 and b = a/2 〈110〉 are present.     

Stability of dislocations in MgO single crystals at high temperatures

The dislocation structures of MgO single crystals annealed at 1900 °C for 3 hrs and at 2000°C for 1 hr were observed electron microscopically, and it was found that the following reactions took place at high temperatures: a/2 〈11 0〉 + a/2 [110], = a [100], a/2 [110] + a/2 〈11 01〉 = a/2 [011]. The resultant dislocations were sessile. Their interaction with impurities would make the subgrain boundaries stable.     

Partial dislocations and stacking faults in cubic SiC

Numerous stacking faults and dislocations (formed by intersection of stacking faults and dislocations limiting nonintersecting stacking faults) in the 3C-SiC films grown by molecular beam epitaxy on a silicon substrate were studied by electron microscopy with the use of weak beams. A procedure for determining any of possible Burgers vectors of the (1/6)〈116〉-type glide dislocations and the (1/6) 〈110〉-and (1/3)〈001〉-type sessile partial dislocations (in face-centered cubic lattices) is developed based on the criterion of the contrast value. The sessile dislocations formed by intersections of stacking faults were shown to have the (1/6)〈110〉-and (1/3)〈001〈-type Burgers vectors. The width of nonintersecting stacking faults corresponds to the stacking-fault energy ranging within 0.1–2 mJ/m².     

On the delay of thermally activated motion of pyramidal dislocations in zinc

The effect of shear stress and temperature on the delay time, t_i, of thermally activated motion of dislocations in the {112 2} 〈112 3〉 slip system in Zn single crystals is studied. The delay is associated with a higher density of crystal defects at the initial path of dislocation motion.     

Zur Epitaxie von Galliumnitrid auf nichtstöchiometrischem Spinell im System GaCl/NH3/He

The crystalline perfection and the epitaxial relationships of GaN layers prepared by the reaction of GaCl and NH₃ in He carrier gas on {111} and {100} spinel substrates have been determined by RHEED measurements. The epitaxial relationships were found to be The best crystalline perfection could be achieved at growth temperatures of 1000…︁1050°C and growth rates more than 1 μm/min. – The growth direction 〈101 1〉 has been found to be more suitable for rapid growth than the direction 〈0001〉.     

Electron microscope study of intrinsic and extrinsic stacking faults,and twins in SOS at the early stage of epitaxial growth

Fine structures of the Si films on (1$\text{1}$02) sapphire have been studied by a lattice resolution TEM. The Si was deposited by the pyrolysis of silane in H₂ at 1000°C at a growth rate of 0.1μm/min. The samples for TEM were prepared by peeling off the Si films from the substrates after HF treatment. A film having a mean thickness of 500 Å was composed of (100) and {110} domains. The volume fraction of the {110} domains was more than 50% and about constant as a function of growth time. The {110} domains contained much higher density of microtwins than the (100) domains. These microtwins had various thicknesses including one atomic layer (intrinsic stacking faults) and two atomic layers (extrinsic stacking faults). The density of the intrinsic stacking faults was higher than those of extrinsic stacking faults and other twins. The {110} and (100) islands were nucleated independently and the microtwins were also present in the islands smaller than 500 Å in diameter.