Low temperature magnetoresistance in La1.32Sr1.68Mn2O7 layered manganite under hydrostatic pressure

The La_1.32Sr_1.68Mn₂O₇ layered manganite system has been studied by the low temperature electrical resistance and magnetoresistance under hydrostatic pressure up to 25 kbar. We have observe both, a Curie temperature (T_C) and a metal-insulator transition (T_MI) at 118 K in the ambient pressure. The applied pressure shifts the T_MI to higher temperature values and induces a second metal-insulator transition (T²_MI) at 90 K, in the temperature dependence of resistivity measurements. Also, the pressure suppresses the peak resistance abruptly at T_C. When an external field of 5 T is applied, we have observed a large negative magnetoresistance of 300% at the transition temperature and a 128% at 4.5 K. However, the increased pressure decreases the magnetoresistance ratio gradually. When the pressure reaches its maximum available value of 25 kbar, the magnetoresistance ratio decreases at a rate of 1.3%/kbar. From our experimental results, the decrease of magnetoresistance ratio with pressure is explained by the pressure induced canted spin state which is not favor for the spin polarized intergrain tunneling in layered manganites.     

Large negative magnetoresistance in thiospinel CuCrZrS4

We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS₄. The electrical resistivity increased with decreasing temperature according to the exp(T₀/T)^1/2, an expression derived from variable range hopping with strong electron-electron interaction. The resistivity under a magnetic field was expressed by the same form with the characteristic temperature T₀ decreasing with increasing magnetic field. Magnetoresistance ratio ρ(T,0)/ρ(T,H) is 1.5 for H=90 kOe at 100 K and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. A possible mechanism of the large magnetoresistance is discussed.     

High-field magnetoresistance of polycrystalline ZrZn2

We report magnetoresistance measurements of polycrystalline ZrZn₂ as a function of temperature (4.2–48K) and magnetic field up to 19 T. The results indicate the presence of both positive and negative contributions to the magnetoresistance. The latter is due to spin fluctuations. Below T_c the resistivity varies with temperature like T² over the entire field range (0–19 T). The coefficient of the T² -term decreases with increasing field and fits a $\text{H}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>3</mtext>}}$ dependence above ～ 10 T, in accordance with theoretical predictions. Complex behaviour of the magnetoresistance is found in the paramagnetic regime above ～ 5 T.     

Magnetoresistance of inversion and accumulation layers in MOS structures on pSi (100)

The magnetoresistance of two-dimensional electron and hole gases in MOS structures onpSi (100) was studied in inversion and accumulation regimes, respectively, measurements being made without contacts using a new experimental technique. In the magnetic field (h < 7 T) parallel to the sample surface the positive magnetoresistance was established to depend on a combination H/T^α (α ≈ 0.5, 1.7 ? T ? 4.2 K), that is unexplainable in terms of modern theories of electron localization and electron-electron interaction. In the perpendicular field, the magnetoresistance of p-accumulation layer is positive and comparable in magnitude with that in the parallel field.     

Luminescence Microscopy of Single Quantum Dot Pairs with Nanometer Spatial Resolution

The transverse magnetoresistance of Ho_0.8Lu_0.2B₁₂ dodecaboride with a cage glass structure is studied at low (2–10 K) temperatures. It is demonstrated that the isotropic negative magnetoresistance in this antiferromagnet is dominant within the broad temperature range near T_N ≈ K. This contribution to the total magnetoresistance is due to the scattering of charge carriers by nanoclusters formed by Но³⁺ ions, and it can be scaled in the ρ = f(μ²_effH²/T² ) representation. It is found that the magnetoresistance anisotropy above (about 15% at 80 kOe) is due to the positive contribution, which achieves maximum values at the magnetic field direction close to H ║ [001]. The anisotropy of the charge carrier scattering is interpreted in terms of the cooperative dynamic Jahn?Teller effect at В12 clusters.     

Transport properties of n-type ferromagnetic semiconductor HgCr2−xInxSe4(x = 0.100)

Measurements of the electrical conductivity, magnetoresistance, and Hall effect were performed on a n-type ferromagnetic semiconductor HgCr_2?xIn_xSe₄(x = 0.100) single crystal from 6.3 to 296 K in magnetic fields up to 1.19×l0⁶A/m. The conductivity decreases rapidly near the Curie temperatureT_c (≈120 K) as the temperature is raised. A large peak in the magnetoresistance is observed near T_c. The Hall effect measurements indicate that the temperature dependence of the conductivity and the magnetoresistance are due mostly to a change in electron mobility. The electron mobility is 1.2 × 10^?2 m²/V · s at 6.3 K, and decreases rapidly near T_c with the rise in temperature. Then it increases slowly from 5.5 × 10^?4 m²/V · s at 160 K to 7.5 × 10^?4 m²/V · s at 241 K. This temperature dependence of the electron mobility can be explained in terms of the spin-disorder scattering which takes into account the exchange interaction between charge carriers and localized magnetic moments.     

Doping effect on the carrier scattering in iron-pnictide superconductors studied by charge transport

In order to reveal the role of “carrier doping” in the iron-based superconductors, we investigated the transport properties of the oxygen-deficient iron-arsenides LnFeAsO_1−y (Ln=La, Ce, Pr and Nd) over a wide doping range. We found that the effect of “doping” in this system is mainly on the carrier scattering rather than carrier density, quite distinct from that in high-T_c cuprates. In the case of La system with lower T_c, the low temperature resistivity is dominated by T² term and fairly large magnetoresistance is observed. On the other hand, in the Nd system with higher T_c, carriers are subject to stronger scattering showing nearly T-linear resistivity and small magnetoresistance. Such strong scattering appears intimately correlated with high-T_c superconductivity in the iron-based system.     

High-field magnetoresistance and Hall effect in Bi2Sr2CuO x single crystals

We investigated the in-plane magnetoresistance and the Hall effect of high-quality Bi₂Sr₂CuO_x single crystals with T _c (midpoint) = 3.7–9.6 K in dc magnetic fields up to 23 T. For T < 10 K, the crystals show the classical positive magnetoresistance. Starting at T ≈ 14 K, an anomalous negative magnetoresistance appears at low magnetic fields; for T ≥ 40 K, the magnetoresistance is negative in the whole studied range of magnetic fields. Temperature and magnetic field dependences of the negative-magnetoresistance single crystals are qualitatively consistent with the electron interaction theory developed for simple semiconductors and disordered metals. As is observed in other cuprate superconductors, the Hall resistivity is negative in the mixed state and changes its sign with increasing field. The linear T-dependence of cotθ_H for the Hall angle in the normal state closely resembles that of the normal-state resistivity as expected for a Fermi liquid picture.     

Room temperature magnetoresistance in Ln2/3A1/3MnO3 manganites

The investigation of the manganites La_2/3−xPr_xSr_1/3MnO₃, La_2/3Sr_1/3−xCa_xMnO₃ and La_2/3+xCa_1/3−2xAg_xMnO₃, which all exhibit Mn³⁺:Mn⁴⁺=2, shows that it is possible to reach high magnetoresistance at room temperature, up to 21% under 1.2 T. These materials are compared to La_5/6Ag_1/6MnO₃ which corresponds to the same Mn³⁺:Mn⁴⁺ ratio and exhibits a magnetoresistance of 25% in this field. An interesting feature deals with the value of the insulator-metal transition temperature T_IM, often higher than T_C, especially for Ag-based compounds. It is suggested that the latter results either from a better oxygenation of the surface of the grains or from a migration of silver toward the surface.     

Study of magnetotransport in double-layered La1.4Ca1.6Mn2O7 manganite: Presence of nano-ferromagnetic domains in paramagnetic matrix

Double-layered manganite La_1.4Ca_1.6Mn₂O₇ has been synthesized using the solid-state reaction method. It had a metal-to-insulator transition at temperature T_M1≈127 K. The temperature dependence of ac susceptibility showed a broad ferromagnetic transition. The two-dimensional (2D)-ferromagnetic ordering temperature (T_C2) was observed as ≈245 K. The temperature dependence of its low-field magnetoresistance has been studied. The low-field magnetoresistance of double-layered manganite, in the temperature regions between T_M1 and T_C2, has been found to follow 1/T⁵. The observed behaviour of temperature dependence of resistivity and low-field magnetoresistance has been explained in terms of two-phase model where ferromagnetic domains exist in the matrix of paramagnetic regions in which spin-dependent tunneling of charge carriers occurs between the ferromagnetic correlated regions. Based on the two-phase model, the dimension of these ferromagnetic domains inside the paramagnetic matrix has been estimated as ∼12 Å.     

Anomalies of magnetoresistance of compounds with atomic clusters RB12 (R = Ho, Er, Tm, Lu)

The magnetoresistance and magnetization of single-crystal samples of rare-earth dodecaborides RB₁₂ (R = Ho, Er, Tm, Lu) have been measured at low temperatures (1.8–35 K) in a magnetic field of up to 70 kOe. The effect of positive magnetoresistance that obeys the Kohler’s rule Δρ/ρ = f(ρ(0, 300 K)H/ρ(0, T)) is observed for the nonmagnetic metal LuB₁₂. In the magnetic dodecaborides HoB₁₂, ErB₁₂, and TmB₁₂, three characteristic regimes of the magnetoresistance behavior have been revealed: the positive magnetoresistance effect similar to the case of LuB₁₂ is observed at T > 25 K; in the range T _N ≤ T ≤ 15 K, the magnetoresistance becomes negative and depends quadratically on the external magnetic field; and, finally, upon the transition to the antiferromagnetic phase (T < T _N ), the positive magnetoresistance is again observed and its amplitude reaches 150% for HoB₁₂. It has been shown that the observed anomalies of negative magnetoresistance in the paramagnetic phase can be explained within the Yosida model of conduction electron scattering by localized magnetic moments. The performed analysis confirms the formation of spin-polaron states in the 5d band in the vicinity of rare-earth ions in paramagnetic and magnetically ordered phases of RB₁₂ and makes it possible to reveal a number of specific features in the transformation of the magnetic structure of the compounds under investigation.     

Giant volume magnetostriction and colossal magnetoresistance in La0.7Ba0.3MnO3 at room temperature

In single-crystal La_0.7Ba_0.3MnO₃, giant volume magnetostriction was observed for the first time to reach 2.54 × 10^?4 at room temperature and a still larger level of 4 × 10^?4 at the Curie point T _C = 310 K in a magnetic field of 8.2 kOe. At the same temperatures and magnetic field, this effect is complemented by a colossal magnetoresistance of 15.2 and 22.7%, respectively. The volume magnetostriction ω and magnetoresistance Δρ/ρ follow similar patterns in the proximity of T _C; namely, ω and Δρ/ρ are negative, maxima are observed in the |ω|(T) and |Δρ/ρ|(T) curves, and the ω and Δρ/ρ isotherms do not saturate in the highest fields applied. These phenomena are assigned to the fact that, in the above composition, there exists a two-phase magnetic (ferromagnetic-antiferromagnetic) state induced by strong s–d exchange.     

La0.7Sr0.3MnO3 film prepared by dc sputtering on silicon substrate: Effect of working pressure

La_0.7Sr_0.3MnO₃ films were prepared by dc sputtering on Si (100) substrate at different working pressure. The possibility of controlling the magnetic and transport properties of colossal magnetoresistance film is investigated, which has attracted great research interest for practical application. The as-grown film shows different magnetic, transport and magnetoresistance change at different working pressure at room temperature, which is quite attractive from technological point of view. Maximum magnetoresistance (MR) of ?5.56%, Curie temperature (T_c) of 325 K and metal insulator transition temperature (T_MI) of 278 K was achieved at room temperature.     

Study of the magnetization and transport properties of the La(2+x)/3Sr(1−x)/3Mn1−xCrxO3 (0≤x≤0.2) system

The samples with the Mn³⁺/Mn⁴⁺ ratio fixed at 2:1 La_(2+x)/3Sr_(1−x)/3Mn_1−xCr_xO₃ (0≤x≤0.20) have been prepared. The magnetic, electrical transport, and magnetoresistance properties have been investigated. Remarkable transport and colossal magnetoresistance (CMR) effect, as well as cluster glass (CG) behaviors have been clearly observed in the samples studied. It was found that the Curie temperature T_c and insulator−metal transition temperature T_p1 are strongly affected by Cr substitution. The experiment observations are discussed by taking into account the variety of tolerance factors t; the effects of A-site radius 〈r_A〉 and the A-site mismatch effect (σ²).     

Hopping conductivity of carbynes modified under high pressures and temperatures: Galvanomagnetic and thermoelectric properties

The conductivity, thermopower, and magnetoresistance of carbynes structurally modified by heating under a high pressure are investigated in the temperature range 1.8–300 K in a magnetic field up to 70 kOe. It is shown that an increase in the synthesis temperature under pressure leads to a transition from 1D hopping conductivity to 2D and then to 3D hopping conductivity. An analysis of transport data at T ≤ 40 K makes it possible to determine the localization radius a ～ (56?140) Å of the wave function and to estimate the density of localized states _g(E _F) for various dimensions d of space: _g(E _F) ≈ 5.8 × 10⁷ eV^?1 cm^?1 (d=1), _g(E _F) ≈5×10¹⁴ eV^?1 cm ^?2 (d=2), and _g(E _F)≈1.1×10²¹ eV^?1 cm_?3 (d=3). A model for hopping conductivity and structure of carbynes is proposed on the basis of clusterization of sp ² bonds in the carbyne matrix on the nanometer scale.     

Effect of the disorder parameter on the magnetic,electrical, galvanomagnetic,elastic, and magnetoelastic properties of <Emphasis Type="Italic">R</Emphasis><Subscript>0.55</Subscript>Sr<Subscript>0.45</Subscript>MnO<Subscript>3</Subscript> manganites

This paper reports on a study of the magnetic, transport, magnetotransport, elastic, and magnetoelastic properties of the R_0.55Sr_0.45MnO₃ ceramics (R=Sm, Eu_0.40Nd_0.15, Tb_0.25Nd_0.30) with the same carrier concentration and identical tolerance factor but which differ in the cation disorder parameter σ². It was found that the Curie temperature T_C decreases linearly with increasing σ². An increase in σ² results in an increase in the maximum electrical resistivity and an increased jump in the temperature dependence of linear thermal expansion near T_C, as well as in a decrease in magnetoresistance and magnetostriction. For T>T_C, one observes an abrupt increase in magnetostriction, magnetization, and magnetoresistance in a critical FIeld H_C1 which grows with increasing temperature. The value of H_C1 determined at fixed T/T_C decreases with increasing σ².     

Specific features of magnetoresistance during the antiferromagnet—paramagnet transition in Tm1 − x Yb x B12

The transverse magnetoresistance Δρ/ρ(H, T) of Tm_{1 ? x} Yb _x B₁₂ single crystals is studied in the ytterbium concentration range corresponding to the antiferromagnet-paramagnet transition in a magnetic field up to 80 kOe at low temperatures. A magnetic H-T phase diagram is constructed for the antiferromagnetic state of substitutional Tm_{1 ? x} Yb _x B₁₂ solid solutions with x ≤ 0.1. The contributions to the magnetoresistance in the antiferromagnetic and paramagnetic phases of the dodecaborides under study are separated. Along with negative quadratic magnetoresistance -Δρ/ρ ∝ H ₂, the magnetically ordered phase of these compounds is found to have component Δρ/ρ ∝ H that linearly changes in a magnetic field. The negative contribution to the magnetoresistance of Tm_{1 ? x} Yb _x B₁₂ is analyzed in terms of the Yosida model for a local magnetic susceptibility.     

Pressure and temperature induced modification of luminescence from tetracene single crystals

Fluorescence spectra of crystalline tetracene have been recorded in the temperature range 120 to 300 K under hydrostatic pressure up to 600 MPa. From discontinuities in both emission spectra and spectral intensities it is concluded that two phase transitions occur. The room temperature phase is transformed to a low temperature phase/high pressure phase I at T^I_t (p = 0) = 182 K, the temperature coefficient being dT^I_t/dp = 0.395 K/MPa. The phase transition is induced by a decrease of the specific volume under pressure and/or upon cooling. Lack of a significant shift of the origin of the fluorescence band near T^I_t at constant pressure is an artifact resulting from the neglect of reabsorption effects. The Stokes shift is 260 cm^-1, independent of temperature and crystal modification. In accord with previous Raman data a second phase transition occurs at T^II_t (p) = 143 K, the pressure shift being dT^II_t/dp = 0.088 K/MPa.In addition, the shift of the triplet energy as a function of pressure as well as the pressure-dependence of the rate constants governing fission of a singlet exciton into a pair of triplets is discussed utilizing their magnetic field dependences.