Field evaporation end forms of tungsten

The anomalous field ion images consisting of bright bands of variable width parallel to the 〈111〉 zones, previously reported for tungsten pulse evaporated in helium at 78 K, have also been observed with neon as imaging gas. For both gases the upper limit to the pulse lengths for production of the bands is about 1 ms. The influence of the ratio, R, of pulse height to the total evaporation voltage on the intensity distribution in field ion images of tungsten has been studied for helium and neon together with the effect of residual gases peculiar to ion pumped stainless steel UHV systems (H₂, CH₄ and CO). It is found that when R is raised to a certain level traces of residual gases if present in sufficient quantities, can produce, with tungsten, images with intensity distributions similar to those found with molybdenum after slow evaporation. These are attributed to preferential adsorption of the residual gases on different parts of the specimen and, depending on the nature of the adsorbate, leading to a promotion or a reduction of the ionization probability of the imaging gas. It is pointed out that before an image can be described as typical of a particulaelement or alloy, the conditions of prior evaporation should be carefully controlled.     

碳纳米管端口的场蒸发

将单根多壁碳纳米管(multi-walled carbon nanotube,MWCNT)组装在W针尖上并送入超高真空场发射/场离子显微镜(Ultrahigh Vacuum Field-emission/Field-Ion microscope,UHV-FEM/FIM)进行场蒸发及场发射研究.结果表明,场蒸发可以降低MWCNT的逸出功,从而增强其场发射能力.估算MWCNT的蒸发场低于1.3×10⁸V·cm^-1,且在此场强下的平均蒸发速率为9.4nm·min^-1.定性讨论了MWCNT的蒸发场大大低于C的理论值的原因.首先,通过场解吸获得的清洁端口上有较多悬挂键,平均每个C原子的配位数较小,所以升华热较低.其次,可能存在于MWCNT中的H原子会在强场下碰撞端口的C原子,使其更易蒸发.以上结果显示了利用场蒸发剪短碳纳米管从而改善其场发射特性的可行性. 关键词： 碳纳米管 场蒸发 场发射     

Line phosphorescence spectrum of octachlorodibenzo-p-dioxine at 4.2 K

The line phosphorescence spectrum of octachlorodibenzo-p-dioxine (OCDX) is obtained and interpreted. The symmetry of the lowest triplet state of this molecule is established. The vibrational frequencies found from the vibronic phosphorescence spectrum at 4.2 k are assigned to the vibrational modes of certain symmetry related to individual functional atomic groups of the molecule. The relation between contributions from the spin-orbit (SO) and vibronic-spin-orbit (VSO) interactions to the phosphorescence rate constant k _ph of the OCDX molecule is found from the vibronic line intensities. It is found that the increase in the number of Cl atoms in OCDX compared to that in tetrachlorobenzo-p-dioxine results in the increase in the relative contribution of the VSO interaction to k _ph.     

Lattice dynamics of CuCl at 4.2°K

The deformable-ion model in the dipole approximation is used to calculate the phonon dispersion curves of CuCl at 4.2°K. A very good agreement with the neutron scattering data is obtained with only six adjustable parameters and the model parameters are quite reasonable.     

The forced magnetostriction of nickel at 4.2 K

The forced volume magnetostriction of polycrystalline nickel at 4.2 K has been determined with a relative accuracy of 2 × 10^?2. Combining our result with previous data on the forced magnetostriction, we derive for the forced magnetostriction constants: h'₀ = (40 ± 1) × 10^?8T^?1, h'₁ = (-95 ± 2) × 10^?8T^?1, h'₂ = (-19 ± 2) × 10 ^?8T^?1.     

Electrothermal automodulation in incipient ferroelectric whispering-gallery microwave resonators at 4.2 K

Threshold conditions for electrothermal automodulation instability in high-Q ferroelectric microwave cryogenic resonators operating in the two-mode regime are investigated. The dependence of the electrothermal automodulation frequency on the numbers of interacting modes for different combinations of thermal modes and surface electromagnetic whispering-gallery modes is presented. The threshold power exciting the electrothermal automodulation of the oscillation of the partial mode electromagnetic amplitudes is compared with the threshold power of strictional parametric excitation of acoustic oscillations in the resonator. It is shown that the electrothermal automodulation in the two-mode regime may take place at an excitation power from 10 to 120 μW depending on the combination of interacting thermal and electromagnetic surface modes. Calculated threshold powers are low, which makes it possible to apply the electrothermal automodulation for improving the sensitivity of resonance bolometers and distributed microwave antennas with basic elements built around nonlinear microwave resonators. In addition, the electrothermal automodulation could be applied in developing novel microwave metamaterials. Nonlinear microwave whispering-gallery cryogenic resonators can be used as elements increasing the sensitivity of EPR spectroscopy methods.     

Photo-induced magnetophonon resonance in n-InSb at 4.2°K

Spin-flip and two-phonon as well as normal magnetophonon resonance are observed in CO₂-laser-irradiated photoconductivity in n-InSb at 4.2°K. The effects are attributed to the resonant cooling of photo-excited electrons due to optical phonon emission.     

Isothermal bulk modulus of solid xenon for zero pressure at 4.2 K, 65 K and 77 K

An interferometric method has been used to measure the isothermal bulk modulus (the reciprocal of the compressibility) of solid xenon at zero pressure for several temperatures. It is the first time that an elastic constant of this substance has been measured at a temperature below 10 K. The smoothed results are (37.9 ± 0.5) kbars at 4.2 K, (29.6 ± 0.5) kbars at 65.6 K, and (28.2 ± 0.5) kbars at 77 K.     

Secondary anti-stokes emission from the bulk of gallium phosphide at 4.2 K

Secondary radiation (photoluminescence and Raman scattering) emitted by gallium phosphide single crystals at helium temperatures is investigated. It is established for the first time that, in the case when the secondary emission spectra are excited by a cw low-power He-Ne laser, whose linewidth lies in the transparency region of GaP, anti-Stokes photoluminescence from the bulk of the sample occurs due to interband and impurity recombination. The results obtained make it possible to carry out a qualitative and quantitative analysis of impurities which are present in the bulk of a semiconductor by recording the bulk anti-Stokes photoluminescence spectra at low temperatures.     

Local magnetic field distributions in superconducting niobium at 4.2 K by neutron diffraction

Neutron diffraction experiments on flux line lattices in superconducting Nb are reported. From the integral reflectivities of the (10), (11), (20), (21) and (31) reflections the absolute values of the formfactors were obtained as a function of the flux density. Considering certain properties of the flux line lattice it is also possible to determine the phases of the formfactors. From this the local field distribution in the mixed state could be calculated by Fourier-transformation. The dependence of the resulting maximum, minimum, and saddle point fields on the flux density and on the impurity parameter is discussed and compared with theory.     

Drift of excitons in an inhomogeneous electric field in silicon at 4.2K

The results are presented of the experimental detection and investigation of the phenomenon of the drift of excitons in an inhomogeneous electric field. The investigations were performed on silicon structures with Shottky barriers at 4.2 K. A study was made of the influence of the photoexcitation intensity and electric field strength on the breakdown dynamics of the structure. The experimental results were used to show that breakdown of a reverse-biased Shottky barrier involves a narrowing of the width of the space-charge region due to a drift of excitons in the inhomogeneous electric field and to recombination of electrons on ionized impurity centers of the barrier. Kh. I. Amirkhanov Physics Institute, Dagestan Scientific Center, Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 67–69, May, 1997.     

Current noise in (111) n-channel Si-MOSFET's at T = 4.2 K

We have investigated the drain current-drain voltage characteristics and the spectral noise intensity of the drain current of (111) n-channel MOSFET's at T = 4.2 K. At T = 4.2 K the drain current-drain voltage characteristics showed a hysteresis which was not observed at T =77 K and at room temperature. A qualitative explanation of this hysteresis is given in terms of electron transfer from high mobility valleys to low mobility valleys due to hot electrons. In the spectra of the current noise three contributions could be distinguished: 1/ƒ-noise, white noise and generation-recombination noise. The 1/ƒ-noise is interpreted as number fluctuations noise. The effective trap density was found to be 2.3 × 10²² m^-3. At low drain voltages the white noise can be interpreted as diffusion noise. At higher drain voltages extra noise is observed over and above diffusion noise. This extra noise may be inter-valley noise. The generation-recombination noise was very sensitive to the gate voltage. A tentative explanation can be given if it is assumed that the traps which cause this noise have a non-uniform energy distribution.     

Thermomagnetic Stability and Current-Carrying Capacity of REBCO Tapes without Copper Coating at 4.2 K

Technical Physics - The current-carrying capacity of second-generation commercial high-temperature superconducting REBCO tapes with a width of 12 mm without a stabilizing copper coating...