Effect of the plasmon-exciton interaction on optical properties of core-shell nanoparticles

The plasmon-exciton interaction in composite nanoparticles consisting of a metal (Au) core coated with two layers of organic materials, i.e., a monomolecular dielectric interlayer and a layer of cyanine dye J-aggregate was studied. In contrast to previously studied systems, metal in nanoobjects under consideration is at a distance of 1.2 nm from the J-aggregate, which allows maintaining the interaction of metal plasmons and J-aggregate excitons and weakening luminescence quenching at the same time. The particle morphology was studied by transmission electron and atomic-force microscopy. Bands caused by the dye J-aggregate formation on the surface were detected in the absorption spectrum of such particles. Fast dynamics (several picoseconds) of optical density variation was detected by the pump-probe method. The photoluminescence spectrum contains a narrowband characteristic of J-aggregates, which is excited due to a locally strengthened field of metal core plasmons.     

Parameter dependence of optical conductivity in antiferromagnetic phase of iron pnictides

We investigate the optical conductivity of iron pnictides in antiferromagnetic state by mean-field calculation in a five-band Hubbard model, focusing on its anisotropic behavior by examining several states calculated with different Hund coupling J, such as the states with a low or high magnetization and with or without a strong orbital ordering. In addition, we investigate the J dependence of the Dirac cone structure, which is crucial for the low energy excitation. In our calculations, a weakly ordered state with no orbital ordering shows the anisotropy of optical conductivity in accord with experiments. We conclude that the low energy part of the optical conductivity is relevant to the Dirac electron structure rather than the orbital ordering.     

Ion beam induced atomic transport in bilayer systems

Atomic transport in ion beam mixed Co/Pt and Pd/Au bilayer systems have been studied from the shifts of maker layers in Rutherford backscattering spectroscopy. Thin layers (1 nm) of marker (Pd for Co/Pt and Ni for Pd/Au) were embedded as markers at each interfaces. 80 keV Ar⁺ was used to irradiate the marker samples at the temperature range between 90 and 600 K. The Co/Pt system shows isotropic atomic transport (J_Co/J_Pt∼1.1) at low temperatures and anisotropic atomic transport (J_Co/J_Pt∼5.0) at high temperatures. Meanwhile, the Pd/Au system shows near isotropic atomic transport (J_Pd/J_Au∼1.2) at all temperatures examined. These results were discussed in terms of the activation energies for the normal impurity diffusion, cohesive energy difference, and the vacancy migration energy. Atomic transport in thermal spike regime is closely related with the activation energy for normal impurity diffusion. In radiation enhanced diffusion regime, the cohesive energy and/or the vacancy migration energy plays a dominant role for the atomic transport.     

Automated Mueller matrix ellipsometry

The application of rotating-compensator ellipsometry (RCE) to measurements of the system Mueller matrix M of linear optical systems is reported. This technique extends a previously reported procedure for automated Jones matrix ellipsometry to include systems that depolarize light.     

On the anisotropic Heisenberg chain

High-temperature expansions are derived for the specific heat and the _χzz element of the susceptibility tensor for a linear chain of spins $\text{1}\text{2}$ with anisotropic nearest-neighbour interactions. (The coupling constants J₁, J₂ and J₃ are chosen to be different.) Use is made of exact results of the XY model, a first-order perturbation calculation in J₃, a high-temperature expansion for the transverse susceptibility _χxx of the anisotropic XY model and the high-temperature expansion for the isotropic Heisenberg chain. Some characteristic features of deviations from the case of axial symmetry in the coupling constants are discussed.     

The ultimate in real-time ellipsometry: Multichannel Mueller matrix spectroscopy

A review of the techniques and applications of multichannel ellipsometry in the dual-rotating-compensator configuration is given. This ellipsometric approach has been established as the ultimate in real-time, single-spot optical measurement, as it determines the entire 16-element Mueller matrix of a sample over a wide spectral range (up to 1.7-5.3 eV) from raw data collected over a single optical period of 0.25 s. The sequence of optical elements for this ellipsometer is denoted PC_1rSC_2rA, where P, S, and A represent the polarizer, sample, and analyzer. C_1r and C_2r represent two MgF₂ rotating compensators, either biplates or monoplates that rotate synchronously at frequencies of ω₁ = 5ω and ω₂ = 3ω, where π/ω is the fundamental optical period. Previous high-speed Mueller matrix measurements with this instrument have been performed on uniform, weakly anisotropic samples such as (110) Si, in which case one can extract the bulk isotropic and near-surface anisotropic optical responses simultaneously. In such an application, the instrument is operated at its precision/accuracy limits. Here, ex situ results on a strongly anisotropic, locally biaxial film are presented that demonstrate instrument capabilities for real-time analysis of such films during fabrication or modification. In addition, the use of the instrument as a real-time probe to extract surface roughness evolution on three different in-plane scales for an isotropic film surface is demonstrated for the first time.     

Bond operator theory for the frustrated anisotropic Heisenberg antiferromagnet on a square lattice

The quantum anisotropic antiferromagnetic Heisenberg model with single ion anisotropy, spin S=1 and up to the next-next-nearest neighbor coupling (the J₁–J₂–J₃ model) on a square lattice, is studied using the bond-operator formalism in a mean field approximation. The quantum phase transitions at zero temperature are obtained. The model features a complex T=0 phase diagram, whose ordering vector is subject to quantum corrections with respect to the classical limit. The phase diagram shows a quantum paramagnetic phase situated among Neél, spiral and collinear states.     

Rectification of the dipole force in a monochromatic field created by elliptically polarized waves

The rectification of the force of induced light pressure in laser fields formed by elliptically polarized running waves in zero magnetic field is considered. Explicit analytic expressions for the induced and spontaneous forces of light pressure exerted on a stationary atom are obtained for two classes of closed optical transitions: J _g=J→J _e=J+1 and J _g=J→J _e=J (J is half-integral), where J _g and J _e are the total angular momenta of the ground and excited energy levels. It is shown that the ellipticity of waves is the necessary condition for the emergence of the rectification of the induced force in a monochromatic field. The optimal parameters of the field and the maximum rectification coefficient are calculated for a number of optical transitions. The dependence of the rectified force on the velocity is investigated analytically and numerically for the simplest 1/2→1/2 transition.     

Optical nutation and photon echo by phase or amplitude shift of light waves

Optical nutation and photon echo caused by phase shift of a light wave incident on a resonant medium are considered. The case of simultaneous ultrashort perturbation of phase and amplitude is also treated. It is shown that a change of linear to circular polarization of incident light waves gives rise to an increase of the period and the decay time of optical nutation on the resonant atomic transitions J→J. On the contrary, the above mentioned period and decay time in the same situation are decreased on the resonant atomic transitions with the moment change J?J+1. This law in optical nutation can be taken as a base of the method for experimental identification of the atomic and molecular transitions. Moreover, the comparison of the theoretical and experimental optical nutation curves allows the probability of spontaneous emission to be determined.     

Determination of the anisotropy of the optical constants of electrochemically formed platinum oxide films by reflection spectroscopy and Kramers-Kronig analysis

Reflection spectroscopy in connection with Kramers-Kronig analysis was used to evaluate the complex optical constants of a thin anisotropic film of assumed uniaxial symmetry. The change in reflectivity of a platinum electrode, due to the formation of an oxide layer, was measured between 0.9 eV and 5.2 eV for parallel and perpendicular polarization. The corresponding phase-shifts were calculated from these data. The complex optical constants normal n?_n and tangential n?_t to the surface are now obtainable. The spectral dependence of the complex optical constants shows the expected anisotropic behaviour. The results are explained by means of a simple band model.     

Effects of assisting and sputtering ion current on ion beam assisted deposition textured yttria stabilized zirconia buffer layers of coated conductors

Biaxially textured yttria stabilized zirconia (0 0 1) thin films were fabricated on untextured hastelloy substrates by ion beam assisted deposition method. The effects of assisting beam current density J_a and sputtering beam current density J_s on the textures of the films were studied. The results indicate that as J_a or J_s increase, both the out-of-plane and the in-plane textures are improved initially, and then degrade. The results can be attributed to anisotropic damage and selective sputtering effect of assisting ions. At the same ion-to-atom arrival ratio r, which is reflected with J_a/J_s value, lower deposition rate can enhance the biaxial texture.     

Characteristic analysis of the optical delay in frequency response of resonant cavity enhanced (RCE) photodetectors

With consideration of the modulation frequency of the input lightwave itself, we present a new model to calculate the quantum efficiency of RCE p-i-n photodetectors (PD) by superimposition of multiple reflected lightwaves. For the first time, the optical delay, another important factor limiting the electrical bandwidth of RCE p-i-n PD excluding the transit time of the carriers and RC_d response of the photodetector, is analyzed and discussed in detail. The optical delay dominates the bandwidth of RCE p-i-n PD when its active layer is thinner than several 10~nm. These three limiting factors must be considered exactly for design of ultra-high-speed RCE p-i-n PD.     

Effect of change in pulsed DC frequency on indium-tin oxide anode on J-V-L performance of built-up organic light emitting diode during facing-target sputtering

Investigations were carried out on the changes in the electrical and optical properties and surface roughness of the indium-tin oxide (ITO) anode as a function of DC pulse frequency during facing-target sputtering. The current density-voltage-luminescence (J-V-L) characteristics of organic light emitting diodes (OLEDs) developed on the anodes were measured and analyzed in relation to the properties of ITO. When the pulsed DC frequency was less than 120 kHz, the resistivity of ITO was maintained well below 4.3 × 10⁻⁴ Ω cm and the optical energy band gap was greater than 4.1 eV, but these properties changed abruptly at 150 kHz with the morphological transition from columnar to equi-axed. Meanwhile, the surface roughness decreased continuously with increasing pulsed DC frequency up to 150 kHz. The J-V characteristics of the built-up OLED deteriorated slightly as the pulsed DC frequency increased to 120 kHz and then deteriorated rapidly at 150 kHz. The L-V curves, however, showed an improvement of luminescence as the frequency increased up to 120 kHz. These J-V-L characteristics imply that ITO which is more conductive and with a higher band gap can be obtained at the lower pulsed DC frequencies, which is desirable for higher current flow; however, better luminescence is closely related to smoother surfaces. Therefore, for the optimized J-V-L performance of OLEDs, a moderate pulse DC frequency, below the morphological transition of ITO, is desirable.     

On the energy dependence of the real part of the heavy-ion optical potential

The energy dependence of the real part of the heavy-ion optical potential is attributed to the J(J + 1) dependence of the-potential which is caused by the rotation induced during the collision. The magnitude and the form of the energy dependence are calculated for several light nucleus-nucleus systems with the use of the distortion potential which is defined by the diagonalization of the coupling interaction. It is shown that the heavy-ion scatterings with the inelastic channels of high and low excitation energies lead to weak and strong energy dependence of the potential, respectively.     

Manifestation of higher polarization moments in the dipole emission under conditions of stepwise excitation and anisotropic collisions

The induction of higher polarization moments-the octupole orientation and the hexadecapole alignment—in the case of two-step excitation of atoms through dipole transitions and their manifestation in the polarization of dipole emission under conditions of anisotropic collisions are studied. For all channels of the two-step excitation process J ₀→J ₁ J, the efficiencies of production of higher polarization moments with integer and half-integer angular momenta from J=2 to J=7 through the absorption of linearly or circularly polarized light are calculated. The rates of collisional relaxation and interconversion of higher polarization moments, for both orientation and alignment, as functions of frequency detuning of the laser line from the center of the Doppler profile are calculated. The theory is illustrated by an example of two channels of excitation of the atomic state J=2 by circularly polarized light: J ₀=0→J ₁=1J=2 and J ₀=3→J 1=2 (or 3)→J=2. In the first case, the octupole orientation enhances or attenuates the signal of circular polarization depending on the laser frequency detuning. In the second case, it represents the only source producing orientation and circular polarization of the emitted light.     

Lower and upper bounds on the critical temperature for anisotropic three-dimensional Ising model

The Ising model is considered on a simple cubic lattice, with a coupling constant J along one axis and coupling constants J’ along the remaining two axes. The transfer-matrix technique and an extended phenomenological renormalization group theory [18, 19] are applied to obtain two-sided bounds on the critical temperature for the model with J′/J≤1. The bounds monotonically converge with decreasing J′/J and provide improved estimates for the phase-transition temperature in anisotropic three-dimensional Ising model, as compared with those available from the literature.     

Change in the states of optically excited Rb atoms near sapphire surface

The changes in the states of excited Rb atoms approaching a single-crystal sapphire surface have been investigated by methods of laser-excitation spectroscopy and luminescence of Rb vapor in a cell with sapphire windows, the gap between which was varied from 250 to 500 nm. Upon resonant excitation of Rb atoms by two semiconductor lasers with powers of 20 and 40 mW, luminescence from optically excited 5D _3/2 and 5D _5/2 states and optically unexcited 6P _1/2 and 6P _3/2 states is observed. It is established that the luminescence intensity from unexcited states is only a few times lower than that from excited states, with allowance for the fact that excited atoms are rapidly and almost completely quenched on the sapphire surface. The found anomalously strong luminescence from optically unexcited 6P _J states is explained by their nonradiative occupation near the sapphire surface from optically excited 5P _J states, in which atoms fail to reach the sapphire surface because of the repulsion from it. This repulsion is due to the polarization interaction between sapphire and the atoms in the 5P _J states near the surface. Nonradiative transition from the 5P _J state to the 6P _J ^?1 state is accompanied by excitation of two optical phonons in sapphire.     

Unusual "AB" Spectra in High-Resolution Magic-Angle-Spinning NMR-Studies of Solids

Phosphorus-31CP-MAS spectra of Cd(NO₃)₂(PPh₃)₂ have been obtained as a function of spinning frequency. Although the two ³¹P nuclei are crystallographically equivalent and have the same isotropic chemical shifts in the solid state, they exhibit spinning-rate-dependent MAS spectra which have been analyzed to obtain the value of ²J(P, P). At high spinning rates, the spectra are analogous to "A₂" spectra in isotropic solutions, while at slower spinning rates, the spectra are more characteristic of strongly coupled "AB" solution spectra. The AB spectra are unusual in that δ_A = δ_B and J(A, B) is given by the splitting between the alternate peaks in the four-peak multiplet as opposed to the splitting between the outer and adjacent inner lines. This assignment was confirmed by a 2D CP-MAS J-resolved experiment. The unusual spinning-rate-dependent MAS lineshapes result from recoupling of the J interaction between the two crystallographically equivalent nuclei via anisotropic interactions, i.e., weak homonuclear dipolar coupling and differences in the orientation dependence of the chemical-shift tensors. Such spinning-rate-dependent MAS lineshapes are predicted to be a more frequent observation at higher applied magnetic fields.     

Theoretical simulation of photovoltaic response of graphene-on-semiconductors

Using the fundamental models for voltage and current, we report on the photovoltaic behavior of graphene-on-semiconductor-based devices. The graphene-n-Si and graphene-n-GaAs systems are studied for open-circuit voltage (V _OC) and short-circuit current density (J _SC) under low- and high-level injection conditions. The effects of semiconductor doping density and surface recombination velocity on the V _OC of both systems are investigated. The V _OC for graphene-n-Si under low- and high-level injection conditions are found to be 0.353 V and 0.451 V, respectively, whereas the V _OC for graphene-n-GaAs under low- and high-level injection conditions are 0.441 V and 0.471 V, respectively. The J _SC for graphene-n-Si under low- and high-level injection conditions are calculated as 3 mAcm^?2 and 4.78 mAcm^?2, respectively, whereas the J _SC for graphene-n-GaAs under low- and high-level injection conditions are 5.2 mAcm^?2 and 6.68 mAcm^?2, respectively. These results are in good agreement with the reported experimental work.     

Study of the broadening of the rotational Raman lines of CO2 perturbed by rare gases

This paper presents the results of an experimental and theoretical study of the broadening of the rotational Raman lines of the linear molecule CO₂ perturbed by rare gases: helium, neon and argon. In the first part, the experimental set-up and the method to deduce linewidths from the spectra are presented. This method is similar to that used by Welsh et al. although we take into account the contribution of the molecules in the (01¹0) vibrational state for which the rotational quantum number J can be odd. The results for the pressure broadening coefficient are then given for several values of J. We then briefly recall how one can derive collision cross sections from the measured linewidths. The second part is devoted to an attempt to interpret the experimental results in terms of the theory of the Raman linewidths developed by Van Kranendonk. After recalling briefly the assumptions used in that theory and discussing the intermolecular potentials that are used, we present the results of numerical calculations performed with several types of anisotropic interaction potentials between CO₂ and the atom of rare gas. We reach the conclusion that the approximate methods used by Van Kranendonk (matrix elements of the evolution operator S computed by second order perturbation theory) are probably inadequate to calculate the effect of elastic collisions that disorient the molecule. It is suggested that it might be advantageous to consider anisotropic forces of shorter range than the anisotropic London dispersion forces derived from an r^-6 potential.