Dynamics of electrons and holes at surfaces

We present ab initio calculation results for electron-phonon (e-ph) contribution to hole lifetime broadening of the surface state on Al(0 0 1). We show that e-ph coupling in this state is significantly stronger than in bulk Al at the Fermi level. It makes the e-ph decay channel very important in the formation of the hole decay in the surface state at . We also present the results for e-e lifetime broadening in a quantum-well state in 1 ML K/Cu(1 1 1). We show that this contribution is not negligible and is much larger than that in a surface state on Ag(1 1 1).     

Cyclotron resonance of electrons and holes in electric surface subbands of tellurium

We present first measurements of the submillimeter-cyclotron resonance of electrons and holes in electric surface subbands of tellurium. From the resonance in the inversion layer we have obtained for the magnetic field paralled to the trigonal axis, the cyclotron mass of the surface electron m_ce = (0.117 ± 0.002)m₀. The resonance of the accumulation layer splits and suggests the contribution of different nonparabolic subbands.     

Current-induced spin polarization of holes in tellurium

The current-induced optical activity in a tellurium single crystal has been experimentally investigated in the mid-infrared spectral region. The phenomenological theory of the current-induced optical activity has been considered and the microscopic mechanism of this phenomenon has been described. The dependence of the degree of spin polarization of holes in tellurium on the electric current density has been determined. An approximate analytical expression relating the current-induced optical activity to the degree of spin polarization of holes has been obtained.     

Quantized black holes,their spectrum and radiation

Under quite natural general assumptions, the following results are obtained. The maximum entropy of a quantized surface is demonstrated to be proportional to the surface area in the classical limit. The general structure of the horizon spectrum is found. In the special case of loop quantum gravity, the value of the Barbero-Immirzi parameter is found. The discrete spectrum of thermal radiation of a black hole fits the Wien profile. The natural widths of the lines are much smaller than the distances between them. The total intensity of the thermal radiation is estimated. If the density of quantized primordial black holes is close to the present upper limit on the dark-matter density in our Solar system, the sensitivity of modern detectors is close to that necessary for detecting this radiation. The text was submitted by the authors in English.     

Cyclotron resonance of electrons and holes in TlBr

Cyclotron resonance measurements on TlBr with circularly polarized waves at 34 GHz show the presence of an electron resonance at (0.52 ± 0.03)m_o and a hole resonance at (0.70 ± 0.03)m_o. Mobilities of both electrons and holes are determined in the temperature range 6.5°K to 14°K.     

Condensation of injected electrons and holes in silicon

We report that the condensed electron—hole phase in silicon has been produced by electrical carrier injection. The condensed phase recombination radiation occured at 1.082 ± 0.001 eV with a linewidth of 0.012 eV. Hence the line position and linewidth appear to be independent of whether the semiconductor is excited by optical of electrical injection. Joule heating is shown to be important by analyses of time resolved recombination radiation spectra and double pulse experiments.     

Studies of clean and oxidized tellurium surfaces

Clean and oxidized surfaces of tellurium films have been studied using electron-excited Auger electron spectroscopy, X-ray photoelectron spectroscopy, energy loss spectroscopy, and electron-stimulated desorption. The results for clean tellurium are in general agreement with previous studies, but the oxidation studies have provided new information. Reaction between oxygen gas and tellurium was found to be an activated process requiring tellurium temperatures in excess of 60°C to produce detectable oxide for 30 min exposures to ~800 Torr of oxygen. Increasing the temperature to 200°C produced a 10.6 A layer of TeO₂. This layer was rapidly removed by electron irradiation with a cross-section of ~3 × 10^?18 cm² for electron-stimulated desorption of oxygen by 2 keV electrons; however, there was evidence for reduced cross sections for thinner TeO₂ layers.     

Photogeneration of electrons and holes in amorphous molecular semiconductors

This paper reports on the results of investigations into the photoconducting properties of amorphous molecular semiconductors based on films of two types: (i) poly(styrene) films doped with epoxypropylcarbazole (EPC) and a cationic polymethine dye (PD1) and (ii) poly(styrene) films doped with tetranitrofluorenone (TNF) and an anionic polymethine dye (PD2). Films of the first type possess p-type conductivity, whereas films of the second type exhibit n-type conductivity. It is found that, for films with n-type conductivity, unlike films with p-type conductivity, the activation energy of photogeneration of mobile charge carriers decreases with a decrease in the optical wavelength in the absorption range of the dyes. The possible mechanisms of the influence of the photoexcitation energy on the initial distance between charge carriers in electron-hole pairs are analyzed. The inference is made that, when the excess thermal energy of excited dye molecules dissipates at a low rate, the distance between the photogenerated electrons and photogeneration centers increases as compared to the distance between the photogenerated holes and photogeneration centers due to the electron-nucleus interaction.     

Multi-band pairing of ultrarelativistic electrons and holes in graphene bilayer

Multi-band pairing of effectively ultrarelativistic electrons and holes in asymmetrically biased graphene bilayer in strong coupling regime is considered. In this regime, the pairing affects both conduction and valence bands of the both graphene layers, and the order parameter is a matrix, which indices correspond to the bands. For band-diagonal s-wave pairing, we derive the system of multi-band gap equations for the gaps in the valence and conduction bands and solve it in the approximation of constant gaps and in the approximation of separable pairing potential. For a characteristic width of the pairing region of order of magnitude of the chemical potential, the gap values are not much different from single-band BCS estimations. However, if the pairing region is wider, then the gaps can be much larger and depend exponentially on its energy width. We also predict gapped and soliton-like oscillations of a relative phase of the gaps and unpairing of quarter-vortices at Kosterlitz-Thouless transition.     

Observation of dirac holes and electrons in a topological insulator

We show that in the new topological-insulator compound Bi(1.5)Sb(0.5)Te(1.7)Se(1.3) one can achieve a surfaced-dominated transport where the surface channel contributes up to 70% of the total conductance. Furthermore, it was found that in this material the transport properties sharply reflect the time dependence of the surface chemical potential, presenting a sign change in the Hall coefficient with time. We demonstrate that such an evolution makes us observe both Dirac holes and electrons on the surface, which allows us to reconstruct the surface band dispersion across the Dirac point.     

Phonons and electrons at metal surfaces

Some aspects of the coupling between phonons and electrons and the interaction between electrons at metal surfaces are reviewed. Surface science techniques as diverse as electron energy loss spectroscopy, angle-resolved photoelectron spectroscopy, and scanning tunnelling microscopy are employed to study these interactions. Electron–phonon and electron–electron coupling are discussed in terms of renormalized phonon dispersion relations, and increased decay rates of electronic excitations. PACS 63.20.Kr; 68.35.Ja; 68.37.Ef; 68.43.Pq; 72.10.Fk; 72.15.Qm; 73.20.At     

Phase transitions in a system of spatially separated electrons and holes

The formation of a superfluid exciton liquid in a system of spatially separated electrons and holes in a system of two coupled quantum wells is predicted and its properties are investigated. The ground-state energy and the equilibrium density of the exciton liquid are calculated as functions of distance D between the quantum wells. The properties of a rarefied exciton gas with dipole-dipole repulsions are considered, where this gas is the metastable phase for D<1.9a* and the stable phase for D<1.9a* (a* is the radius of the two-dimensional exciton). The gas-liquid quantum transition is examined for increasing D. The Berezinskii-Kosterlitz-Thouless transition temperatures, at which superfluidity arises in the system, are found for different values of D. Possible experimental manifestations of the predicted effects are discussed. Zh. éksp. Teor. Fiz. 111, 1879–1895 (May 1997)     

Vertical transport of electrons and holes in short period GaAs---AlGaAs superlattices

Owing to the use of a high sensitivity streak camera we are able to observe photoluminescence (PL) decays with excitation density as low as 10¹⁴ photocarriers cm⁻³ per pulse. At such low densities photoexcited electrons are the minoritar carriers in our residual p-type MBE materials and they move freely. By varying the excitation density we are able to evidence the transition from electron transport regime to ambipolar motion. We have studied a series of samples superlattices (SLs) of different periods and AlGaAs reference alloy with an enlarged well (EW) located at about 1 μm from the surface. The vertical transport in these structures is analysed by measuring the dynamics of the photoluminescence.     

Photoionization of electrons and holes at oxygen donors in gallium phosphide

The spectral dependence of the photoionization cross-section for the oxygen donor in GaP is studied in the temperature range between 90 and 410°K by steady state photocurrent measurements using two different radiation sources. From a fit of Lucovsky's model to the experimental results, accurate information is obtained about the energy position of the oxygen donor at all temperatures. It is found that the oxygen level is pinned to the valence band for temperatures above 295 K and that at these temperatures the Franck-Condon shift is very small. This may indicate that there is little interaction between the impurity level and the surrounding lattice.