Determination of the complex refractive index profiles in P+31 ion implanted silicon by ellipsometry

Ellipsometry was used to determine the complex refractive index profiles in silicon implanted with P⁺₃₁ ions with energies of 35, 52,5 and 70 keV. The profiles were determined both by anodization-stripping of the implanted layer and by numerical fitting of multiple-angle-of-incidence ellipsometer data taken on the as-implanted surface, assuming that the implantation would exhibit a Gaussian distribution. Good correlation was obtained between the two types of profiles, indicating that the non-destructive measurements on the as-implanted surface may be useful in process control. Good agreement with published results was also obtained on the increase in depth with energy of both the damage and the implanted species.     

Optical waveguide with homogeneous refractive index profile in LiNbO3 by double-low-energy Oxygen ion implantation

We report on the formation of the planar waveguide by 550 keV O ion followed by 250 keV O ion implantation in lithium niobate (LiNbO₃), at fluences of 6 × 10¹⁴ ions/cm² and 3 × 10¹⁴ ions/cm², respectively. The Rutherford backscattering/channeling spectra have shown the atomic displacements in the damage region before and after annealing. A broad and nearly homogeneous damage layer has been formed by double-energy ion implantation after annealing. Both the dark mode spectra and the data of refractive index profile verified that the extraordinary refractive index was enhanced in the ion implanted region of LiNbO₃. A homogeneous near-field intensity profile was obtained by double-low-energy ion implantation. There is a reasonable agreement between the simulated modal intensity profile and the experimental data. The estimated propagation loss is about 0.5 dB/cm.     

离子注入Si损伤分布的光谱法多层分析

应用多层模型和最优化方法,由实验测得的离子注入Si的椭偏光谱以及单晶Si和离子注入非晶Si的光学常数,能分析离子注入Si的损伤分布。我们测量了2.1—4.6eV能量范围的椭偏光谱和光学常数,建立了多层计算模型和最优化方法。在模拟分析的基础上,计算了能量为40keV,剂量分别为4×10¹³和1.4×10¹⁴cm^-2的As⁺注入Si的损伤分布,并与背散射测量的结果比较。用多层模型和最优化方法也能从光谱分析其它物理量的分布,只要这些物理量对光学性质有显著的影响,并且在测量过程中不随光子能量而改变。 关键词：     

K+-Na+二次离子交换制作玻璃波导

通过数值计算模拟了K⁺Na⁺二次扩散玻璃波导的折射率轮廓,阐述了利用K⁺Na⁺二次离子交换的方法,在BK7玻璃上制作波导的过程,分析了极化率不同的扩散离子对的选择对波导有效折射率变化的影响,以及扩散平衡时体积变化对表面折射率的影响,描述了扩散引起的波导内部诱导应力变化设计了测试波导损耗以及波导表面折射率改变的实验装置,对尺寸10mm×10mm×1.5mm和10mm×5mm×1.5mm两组BK7玻璃基片上的玻璃波导进行了测试,测试结果与理论吻合较好.     

Refractive index behavior of SiO2-P2O5 glass in optical fiber application

The refractive index of SiO₂-P₂O₅ glass prepared by a modified chemical vapor deposition method is measured using an interference microscope. It is found that the refractive index in bulk form increases linearly at 9.5×10^-4 (mol.%)^-1 as the P₂O₅ concentration increases. It is also found that quenching at extremely high speed reduces the refractive index over 2 mol.% P₂O₅. The wavelength dispersion of the refractive index dn/dλ is constant up to 5 mol.% P₂O₅ producing a refractive index difference of 5×10^-3 compared with fused silica. Consequently, this glass materials is thought to be suitable for wide band-width optical fiber applications.     

Secondary-ion-mass spectrometry study on near-stoichiometric LiNbO3 strip waveguide fabricated by vapour transport equilibration and Ti co-diffusion

Secondary-ion-mass spectrometry was applied to study Ti-concentration profiles in the depth direction and on the surface of near-stoichiometric (NS) Ti:LiNbO₃ strip waveguides fabricated using vapour transport equilibration (VTE) and co-diffusion of Ti-metal strips. Results show that the profile of Ti concentration along the width direction on the waveguide surface can be well fitted by a sum of two error functions, while, in the depth direction, the Ti concentration follows either a complementary error function or a generalized Gaussian function. Surface Ti concentration, 1/e width and depth, mean diffusivities along the width and depth directions of the guide are, respectively, 1.04?×?10²¹?cm^–3, 8.5?µm, 6.3?µm, 0.18 and 0.1?µm²/h. Two-dimensional refractive index profile in the NS waveguides is indirectly constructed by assuming linearity between Ti-induced index change and Ti concentration. The surface refractive index increments at 1545?nm, Δn_o and Δn_e , are evaluated to be 3.132?×?10^–3 and 1.186?×?10^–2, respectively. All of the above-mentioned diffusion and optical parameters are compared with the corresponding data of the common congruent Ti:LiNbO₃ waveguide or NS waveguide fabricated starting from a NS substrate. The rationality of the assumed linear relationship between the index change and the Ti concentration is discussed. The results show that the assumed linearity remains controversial, and all expressions and data with regard to the refractive index are the approximate results and need to be verified by direct measurement on refractive index.     

Analysis of codeposited Gd2O3/SiO2 composite thin films by phase modulated spectroscopic ellipsometric technique

Tailoring of the refractive index of optical thin films has been a very fascinating as well as challenging topic for developing new generation optical coatings. In the present work a novel Gd₂O₃/SiO₂ composite system has been experimented and probed for its superior optical properties through phase modulated spectroscopic ellipsometry, spectrophotometry and atomic force microscopy. The optical parameters of the composite films have been evaluated using Tauc-Lorentz (TL) formulations. In order to derive the growth dependent refractive index profiles, each sample film has been modeled as an appropriate multilayer structure where each sub-layer was treated with the above TL parameterizations. All codeposited films demonstrated superiority with respect to the band gap and morphological measurements. At lower silica mixing compositions such as in 10-20% level, the composite films depicted superior spectral refractive index profile, band gap as well as the morphology. This aspect highlighted the fact that microstructural densifications in composite films can override the chemical compositions while deciding the refractive index and optical properties in such thin films.     

Design of an end station for a high current ion implantation system

Single crystal silicon has been implanted with nitrogen and phosphorus ions at MeV energies to fluences between 10¹⁶ and 1.6 × 10¹⁸ ions/cm₂. Infrared transmission and reflection spectra in the range of 1.25 to 40 μm were measured for as-implanted samples and after various annealing treatments. Interference fringes were observed in the IR spectra which are produced by the interference of light which has been multiply reflected between the front surface and the buried layers. By detailed theoretical analyses of the interference fringe structure, we obtained refractive index profiles, which, under suitable interpretation, provide accurate measurements and several quantities of interest. These quantities are the range and straggling of the implanted ions, the depth of disordered layers, and the width of the order-disorder transition. Mechanisms for the refractive index changes which have been identified include amorphization of the implanted silicon, bulk compositional change in the buried layer, localized vibrational mode dispersion, and free electron dispersion. Experimental results and theoretical predictions are presented, demonstrating each of these mechanisms.     

Fabrication of waveguides in Yb:YCOB crystal by MeV oxygen ion implantation

Oxygen ions with energies of 6.0 or 3.0 MeV were implanted into y-cut Yb:YCOB crystals at fluences ranging from 5.0 × 10¹³ to 2.0 × 10¹⁵ ions/cm² at room temperature, forming optical planar waveguide structures. Dark-mode line spectroscopy was applied at two wavelengths, 633 and 1539 nm, in various excitation configurations, showing strong enhancement of one of the indices (n_x) in the implanted near surface. The n_x refractive index profile is reconstructed by a reflectivity calculation method and compared to the ion energy losses profiles deduced from SRIM-code simulation. Moreover, the near-field patterns were imaged by an end-fire coupling arrangement.     

Investigation of refractive index modifications in CW CO2 laser written planar optical waveguides

This paper presents the measurement of the refractive index profile of buried channel waveguides fabricated by a CW CO₂ direct writing technique. A reflectance method is used to assess the refractive index distribution n(x,y) in these structures as it is a key parameter determining the propagation properties of guided wave devices. Beam propagation method (BMP) is used with experimentally determined cross-sectional data and refractive index profile to model the waveguides. The spatial resolution is 1.3 μm and, 5.10⁻⁴ for the refractive index.     

The optical properties of planar waveguides in LiB3O5 crystals formed by Cu implantation

A planar optical waveguide has been formed in a LiB₃O₅ crystal using 6.0 MeV Cu⁺-ions with a dose of 1 × 10¹⁵ ions/cm² at room temperature. Possible propagating modes were measured at a wavelength of 633 nm using the prism-coupling method. The refractive index profiles of the waveguide were reconstructed by an effective refractive index method and the beam propagation method was used to investigate the properties of the propagation modes in the formed waveguide. The results suggest that the fundamental TE₀ and TM₀ modes may be well-confined and propagate a longer distance inside the waveguide. The implantation process was also simulated using the transport of ions in matter code (TRIM), which indicates that the nuclear energy deposition may be the main factor for the refractive index change.     

Characterization of optical waveguide in Nd: GdVO4 by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd: GdVO₄ crystals by triple oxygen ion implantation at energies of (2.4, 3.0, and 3.6 MeV) and fluences of (1.4, 1.4, and 3.1)  × 10¹⁴ions/cm². The prism-coupling method is used to investigate the dark-mode property at wavelength of 632.8 nm. The refractive index profiles of the waveguide are reconstructed by an effective refractive index, n_eff method. The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which means the formation of nonleaky waveguide in the crystal.     

半导体的CO2激光退火和合金化

本文主要研究连续CO₂激光对半导体的照射效应。实验结果与理论分析说明,用连续CO₂激光照射可将半导体样片加热到所需的温度。与其它短波长的激光不同,波长为10.6μm的连续CO₂激光照射半导体有如下特点:CO₂激光是借助于自由载流子吸收与半导体耦合;样片在深度方向被均匀加热;激光背面照射可以增强退火效果。连续CO₂激光照射可以固相外延再生长的方式使As离子注入Si的损伤层退火恢复。在再生长的过程中注入的As离子进入替位,电激活率很高,而且不发生杂质再分布。将连续CO₂激光背面照射成功地应用于GaAsFET制备欧姆接触,既可避免激光正面照射对器件结构的破坏,又能得到比热退火为好的电学性能。 关键词：     

Assessment of damage ranges by measurements of the refractive index in ion implanted LiNbO3 and LiTaO3

Ion implantation in LiNbO₃ and LiTaO₃ produces radiation damage by nuclear collisions. The amorphisation of the lattice reduces the refractive index of the material. In the case of fast ion bombardment with helium this damage layer is buried below the surface. The refractive index profile which then exists is suitable for an optical waveguide on the surface which supports several modes. Analysis of the refractive index profile yields the damage distribution in the crystal and this in turn can be compared with theoretical estimates of the damage production and ion ranges.

Our analyses show that in the high energy range from 0.5 to 2.0 MeV the depth of the damage is predominantly controlled by the electronic stopping.     

Ellipsometric determination of the optical constants of glassy As2S3 thin films in the weak absorption region

The optical constants (the complex refractive index tensor and the geometrical thickness) of thin freshly prepared unannealed films from glassy chalcogenide As-S semiconductors with the stoichiometric formula As₂S₃ are calculated in the weak absorption region (λ = 0.6328 μm) based on multiangle ellipsometric measurements and taking into account the birefringence of optical waves in such films. The advantage of the approximation of an anisotropic uniaxial film is shown, the values of the ordinary and extraordinary refractive indices are determined, and the difference between them is found to be ∼5 × 10⁻³. Original Russian Text ? M.I. Kozak, V.N. Zhikharev, I.P. Studenyak, I.D. Seĭkovskĭ, 2006, published in Optika i Spektroskopiya, 2006, Vol. 101, No. 4, pp. 602–604.     

Effect of H ion implantation on structural, morphological, optical and dielectric properties of l-arginine monohydrochloride monohydrate single crystals

l-arginine monohydrochloride monohydrate (LAHCl) single crystals have been implanted with 100 keV H⁺ ions at different ion fluence ranging from 10¹² to 10¹⁵ ions/cm². Implanted LAHCl single crystals have been investigated for property changes. Crystal surface and crystalline perfection of the pristine and implanted crystals were analyzed by atomic force microscope and high-resolution X-ray diffraction studies, respectively. Optical absorption bands induced by colour centers, refractive index and birefringence, mechanical stability and dielectric constant of implanted crystals were studied at different ion fluence and compared with that of pristine LAHCl single crystal.     

Surface characterization study of a Pd/Co3O4 methane oxidation catalyst

A surface characterization study using X-ray photoelectron spectroscopy (XPS) and ion scattering spectroscopy (ISS) has been performed on a 5 wt.% Pd/Co₃O₄ methane oxidation catalyst before and after exposure to a mixture of CH₄ and O₂ in N₂ at 250 °C for a period of 6 days. The primary peaks observed in the XPS survey spectra are the Co 2p, Pd 3d, O 1s and C 1s, along with Co, Pd and O Auger peaks. High-resolution Pd 3d spectra reveal that Pd exists on the surface predominantly as PdO, with no apparent change in chemical state during reaction. High-resolution XPS Co 2p and O 1s spectra reveal an accumulation of CoOOH and a depletion of CoO in the near-surface region during reaction. ISS analysis with intermittent 1-keV Ar⁺ sputtering was used to obtain depth profiles from the catalyst before and after reaction. The results indicate that the Pd/Co concentration ratio decreases with sputtering and that this ratio is larger for the as-prepared catalyst indicating that morphological changes occur during reaction. The ISS depth profile spectra obtained from the catalyst after reaction indicates the presence of an oxyhydroxide layer throughout the near-surface region. This observation is consistent with the XPS data indicating accumulation of hydroxide and oxyhydroxide species at the surface during reaction.Based on these data and the results of related studies, a reaction mechanism is proposed. In this mechanism, methane dissociatively chemisorbs to form a surface methoxy species and CoOOH. The remaining hydrogen atoms are stripped from the methoxy species leaving an active adsorbed C species which reacts with surface oxygen and a hydroxyl group to form an adsorbed bicarbonate ion which then decomposes to form CO₂ and a surface hydroxyl group. These hydroxyl groups also react to form H₂O and then more O₂ adsorbs dissociatively at the vacant sites.     

Cs^＋-K^＋ Exchange in Z-Cut KTiOPO4 Crystal Covered with Chromium Masking Layer

Cs^＋-K^＋ ion exchanges are performed on z-cut KTiOPO4 crystals with chromium coating covered. The temperature of ion exchange is 430℃, and the time range from 15min to 30min. The dark mode spectra of the samples are measured by the prism coupling method. The channel structures on the samples are observed by a microscope and the near field pattern of the channel waveguides are measured by the end-fire coupling method. The refractive index of the samples increases and the increments at surface are modulated due to the existence of Cr film. In the region covered by Cr film, the refractive index of the samples at the surface increases dramatically in a shallow layer. The results of energy dispersive x-ray spectra indicate that in the region covered with Cr film, Cr ions participate in the ion exchange process, and enhance the refractive index. The results may provide a possibility that achieves index enhancement and Cr doping synchronically.     

Influence of Li-rich vapor transport equilibration on surface refractive index and Mg concentration of MgO (5 mol%)-doped LiNbO3 crystal

The Li-rich vapor transport equilibration (VTE) effect on surface refractive index of MgO (5 mol%)-doped LiNbO₃ crystal is studied at the wavelengths of 473, 632.8 and 1536 nm. The results show that in the early stage of VTE the ordinary index n _o decreases substantially with the VTE duration t, then recovers slightly, and tends to a constant for t>80 h. The extraordinary index n _e shows a similar VTE effect but reveals a relatively weak dependence on the VTE duration. Secondary ion mass spectrometry analysis shows that the VTE induces Mg diffusion within the crystal and hence an inhomogeneous Mg depth profile, depending on the VTE duration. As the VTE is prolonged the Mg homogeneity is improved. The surface Mg concentration, determined from the measured surface n _o and energy dispersive X-ray analysis, shows a substantial VTE duration dependence, which is responsible for the substantial VTE effect on surface index. Neutron activation analysis shows that the VTE hardly induces the MgO loss from the crystal. It appears that the Mg ions counter diffuse to the crystal surface in the early stage of VTE and then diffuse slowly back into the bulk of the crystal toward equilibrium as Li concentration tends to equilibrium. Gravimetric measurement shows that the Li₂O content in the crystal increases with the VTE duration in the early stage of VTE and saturates for t>60 h, and the Li₂O content increase in the saturation regime is about 2.25 mol%.     

Dosimetry techniques

The formation and annealing of defects in ion implanted silicon dioxide layers and in connection with them the refractive index change are of high interest for the production of electronic and integrated optical devices.

Several studies have shown that the ion implantation in fused silica leads to a compaction of the material and in consequence to an increasing of the refractive index.^1–6 On the other hand the defect formation in crystalline quartz is connected with a decreasing of the refractive index up to nearly the same value for ion implanted quartz and fused silica layers in the high dose region.^1,5 On the base of this effects optical waveguides had been produced by ion implantation in both material.^2,7–12 However, the nature of the mechanisms responsible for the defect formation and for the changes of the optical properties are not well understood.

This paper reports on the ion dose and annealing temperature dependence of several defects in connection with the refractive index change.