Optical properties of CsI(Na) and heat-treated pure CsI

On the basis of the similarity of luminescence properties of CsI(Na) crystals and heat-treated crystals of pure CsI excited in the long wavelength tail of the fundamental absorption, the effect of sodium in CsI(Na) is tentatively explained.     

Size-induced effect on cathode luminescence spectra of CsI(Na) and CsI(Tl) crystals

We investigated the cathode luminescence characteristics of CsI(Na)and CsI(Tl)crystals by the spectrum and structure properties at room temperature.We fabricated three different sizes of CsI(Na)and CsI(Tl)crystals and measured their luminescence spectra under cathode rays.We found that CsI(Na)cathode luminescence peaks appear at 420 and 305 nm,and CsI(Tl)cathode luminescence peaks are 540 and 410 nm,the grain size affects CsI(Na)luminescence significantly,and the Na-related420 nm luminescence intensified relatively when the average grain size reaches~20μm,which becomes weak when the grain size is down to nano-scale.But the cathode luminescence spectra of CsI(Tl)crystals with different size have no obvious changes.Our explanations for these phenomena are that the different impurities in the same host material CsI lead to different luminescence mechanisms.These cathode luminescence characteristics indicate the suitability of CsI(Na)and CsI(Tl)crystals to match photomultiplier tube for large area crystal detector development.     

Photo- and radiation-chemical transformations of carbonate ions in CsI and CsI(Tl) crystals

It is shown that irradiation of CsI and CsI(Tl) crystals containing carbonate and hydroxyl ions induces radiation defects there in the form of color centers, HCO ₃ ^- ions, and H₂O molecules. HCO ₃ ^- ions are formed in the bulk of crystals, whereas water molecules are formed only in the surface layer. IR spectra offered no evidence of decomposition of CO ₃ ^2- ions into CO and CO ₂ ^- and of formation of CO ₃ ^- ions in the course of growth nor in the course of irradiation of CsI(CO₃) and CsI(Tl, CO₃) crystals. Electron activator color centers in CsI(Tl, CO₃) crystals are likely to be stabilized by hole near-activator centers and by HCO ₃ ^- ions produced in radiation-induced chemical reactions.     

Experimental Studies on Radiation Damages of CsI(Tl) Crystals

The results of experimental studies on eadiation damage of CsI(Tl) crystal were reported.There are radiation damage effects on CsI(Tl) crystal.Experimental studies on recovery of damaged CsI(Tl) crystals were made.It seems that after heating at 200℃ for 4 hours,the damaged crystals could be recovered completely.     

The influence of strain on the photoluminescence from pure CsI

Studies of the influence of strain on the photoluminescence from pure CsI at room temperatures showed that the luminescence from strained CsI at room temperature before cooling (RTBC) is similar to that of the underformed CsI at room temperature after cooling to lower temperatures (RTAC). We also observed the step-like dependence of the luminescence intensity of the strained sample on the exciting wavelength. Several interpretations of the results are suggested.     

Energy resolution of CsI(Na) scintillators

The presented paper on CsI(Na) scintillators is a continuation of systematical studies of alkali halide crystals exhibiting more than one exponential decay time. The CsI(Na) crystals are known to have short (～550 ns) and long (few microseconds) components in the scintillation pulse. Previous studies showed that integration of slow components of the light pulse improved the light output, non-proportionality and energy resolution of CsI(Tl), NaI(Tl) in lower temperatures and undoped NaI crystal at liquid nitrogen temperature. In this work, an influence of the shaping time in the spectroscopy amplifier on the light output, non-proportional response to γ-rays, and energy resolution of two different size CsI(Na) scintillators is examined. Each crystal was coupled to the Photonis XP5212 PMT with a photocathode blue sensitivity of 12.2 μA/l mF. The data analysis showed improved proportionality of the crystal response, higher number of photoelectrons/MeV-γ, and consequently, a better overall energy resolution obtained for 12 μs shaping time constant. Finally, the CsI(Na) characteristics are compared to that obtained previously for NaI(Tl).     

Comparisons of spectral properties of CsI:T1 crystals with various Tl(+)-doped concentrations

Absorption Spectra and Photoluminescence (PL) spectra of CsI: T1 crystals with various T1+-concentrations were measured for absorption and luminescent research in CsI: T1. Their UV absorption spectra contained three peaks at 297, 273 and 247 nm. The experiments were demonstrated that the peaks in the high T(1+)-concentration CsI: T1 crystals are broader than ones in the low T(1+)-concentration crystals and their absorption A-peak shift by 20 nm, but their PL with UV excitations are similar. It was suggested that lattice distortions in the high T1+-concentration CsI: T1 lead to the changes in absorption or fluorescence excitation peaks, but no changes in the fluorescence band widths and locations at room temperature.     

Thermoluminescence and photoluminescence studies on gamma irradiated CsI: Pb2+ crystals

Pure and Pb²⁺-doped CsI crystals have been grown by the Bridgemann technique. Optical absorption, thermoluminescence (TL) and photoluminescence (PL) measurements have been performed. In undoped and Pb²⁺-doped cesium iodide crystals, F-centers and V-centers have been produced at 770 nm and 350 nm, respectively. In Pb²⁺-doped crystals, additional centers at 373 nm, 290 nm and 258 nm bands have been produced. In undoped samples, only two glow peaks at 343 K and 373 K have been produced, and in Pb²⁺-doped samples additional glow peaks at 383 K and 423 K have been produced. For all the samples, TL emission, PL and excitation measurements have been performed.     

Property measurement of the CsI (Tl) crystal prepared at IMP

Large-sized CsI(T1) single crystals,～Φ100 mmx350 mm,have been grown successfully,and this CsI(Tl) coupled with PD has been successfully utilized at RIBLL (the Radioactive Ion Beam Line in Lanzhou)to measure the energy of heavy ions as a stopping detector.The performances of CsI(Tl) detector coupled with PD and APD have been tested and compared,including the temperature dependence of scintillating light yield.     

Near-infrared ultrabroadband luminescence spectra properties of subvalent bismuth in CsI halide crystals

We observed two ultrabroadband near-infrared (NIR) luminescence bands around 1.2 and 1.5 μm in as-grown bismuth-doped CsI halide crystals, without additional aftertreatment. Dependence of the NIR emission properties on the excitation wavelength and measurement temperature was studied. Two kinds of NIR active centers of subvalent bismuth and color centers were demonstrated to coexist in Bi:CsI crystal. The eye-safe 1.5 μm emission band with an FWHM of 140 nm and lifetime of 213 μs at room temperature makes Bi:CsI crystal promising in the applications of the ultrafast laser and ultrabroadband amplifier.     

Radiolysis of mixed KI + RbI and KI + CsI powders

Abstract

Pure and mixed powders of KI + RbI and KI + CsI are irradiated by X-rays at room temperature. V-type defects are identified by means of Raman scattering experiments. Raman spectra show that similar defects are obtained in pure powders or crystals. Iodine molecules are stabilized in KI in the form of large clusters (I₂)_n while I³ _- ions are obtained in RbI and CsI.     

Absorption and emission due to localized excitons in CsI:Na

The absorption spectra and the characteristic emission and excitation spectra of CsI:Na bulk crystals at temperatures between 300 K and 4.2 K are reported. Localized exciton energies were calculated by considering a Born-Haber cycle. The results were compared with the experimental results and the origins of the absorption bands were identified. The characteristic emission spectrum consists of two bands, one peaking around 4200 Å, the other around 3800 Å. The corresponding excitation spectra show that this emission is due to the recombination of a relaxed exciton which was created by transferring an electron from an iodine ion to a substitutional sodium ion in an otherwise perfect CsI lattice.     

The effect of Pb2+ dopant in the crystal of CsI and its application as scintillation detector: a study of alpha particles

Scintillation crystals have been used in various fields, such as high energy physics, nuclear instrumentation, radiation measurements, medical imaging, nuclear tomography, astrophysics and other fields of science and engineering. For these applications, the development of scintillation crystals with good performance is required. Scintillation crystals based on cesium iodide (CsI) matrix are matters with relatively low hygroscopicity, easy to handle and of low cost, characteristics that favor their use as radiation detectors. In this study, pure CsI crystal and lead doped CsI crystals were grown using the Bridgman vertical technique. The concentration of the lead doping element (Pb) was studied in the range of 10^?2 to 5×10^?4 M. The distribution of the doping element in the crystalline volume was determined by atomic absorption technique. The CsI:Pb crystal with nominal concentration of 10^?3 M was cut into 14 slices of 6 mm. The results show a higher concentration at the top of the crystal with a decrease in the initial phase of growth. The dopant concentration of Pb showed good uniformity from the slice 2 to the slice 12: the region is, therefore, suitable for use as a radiation detector. The luminescence emission of these crystals was measured. A predominant luminescence band near 450 nm and a single broad band around 320 nm were found with the addition of the Pb²⁺ ions in the CsI matrix. Alpha particles spectrometry measurements were carried out to evaluate the developed scintillators.The resolution of 5.6% was obtained for the CsI:Pb 5×10^?4 M crystal, when excited with alpha particles from a ²⁴¹Am source, with energy of 5.54 MeV.     

国产CsI(TI)晶体辐照损伤实验研究

研究了ＣｓＩ（ＴＩ）晶体在１．３ＧｅＶｅ－束形成的电磁辐射场和６０Ｃｏγ辐射场照射后的辐照损伤，测量了晶体光输出和透射率的变化，以及辐射损伤的自然恢复和加热恢复效应。     

A CsI(Tl) detector array used in the experiment of the proton-rich nucleus 17Ne

To investigate the configurations of the valence protons in Borromean nucleus 17Ne, a CsI(Tl) detector array, which consists of 9 CsI crystals (26×26×20mm3) coupled with photodiodes, has been successfully used in the 17Ne experiment to measure the energy of protons. In order to find the optimal working conditions and get the best energy resolutions, several technologies (including various wrapping materials, wrapping and coupling methods) have been used. The testing results showed that the best energy resolution of the CsI(Tl) is about 3.3% using the 241 Am α-source. The primary testing results with the proton beam were also provided.     

Color centers in heavily irradiated CsI(Tl) crystals

The absorption and luminescence properties of CsI(Tl) crystals colored by irradiation are studied by the method of the time-resolved spectroscopy. The scheme of the electron transitions in CsI(Tl) crystal is suggested to explain the appearance of the color centers under exposure to the near-UV light. It is established that either of the two types activator color centers holds the charge carrier with opposite sign. The model of the hole Tl²⁺v_c⁻ activator color center is suggested. According to the model the positive charge of Tl²⁺ ion is compensated by the negative charge of a close cation vacancy v_c⁻. The color center emission reveals in the cathode-luminescence spectrum of the colored CsI(Tl) crystal. The high-dose irradiation of CsI(Tl) crystal results in the reduction of the decay time of the near-thallium self-trapped excitons (STE) emission. The decay kinetics of Tl²⁺v_c⁻ emission contains the time components typical for the decay kinetics of near-thallium STE emission. The reason of the observed effects is the energy transfer from the near-thallium STE excitons to the color centers via the inductive-resonant mechanism.     

Transmittance of CsI,AgCl, KRS-5, and KRS-6 Crystals in the Terahertz Range

Optics and Spectroscopy - Spectral dependences of the transmittance of CsI, AgCl, KRS-5 (TlBr–TlI), and KRS-6 (TlCl–TlBr) single crystals in the infrared (IR) and terahertz (THz)...     

Ion-beam sputtering deposition of CsI thin films

Stoichiometric CsI thin films were deposited by Ar ion-beam sputtering of a CsI target at room temperature. The sputtered 100-nm thick CsI films obtained were characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), atomic force microscopy (AFM) and quantum efficiency (QE) measurements. As it was expected, the chemical, morphological, crystalline and photo-emissive properties of CsI films obtained depended on the deposition parameters. Comparison with results obtained for evaporated CsI films indicated that surface morphology, i.e., the effective photo-emissive surface area, is one of the important parameters in influencing the QE . PACS 81.15.-z; 79.60.Dp; 68.37.Ps     

Luminescence and relaxed excited state origin in CsI:Pb crystals

Emission and excitation spectra, luminescence polarization and decay kinetics have been studied for CsI:Pb crystals in the 0.36-300 K temperature range. The origin of the excited states responsible for the optical characteristics has been discussed. It has been concluded that the doublet ≈3.70 eV absorption (excitation) band is caused by the electronic transitions into the Pb²⁺ triplet state split due to the presence of a cation vacancy near a Pb²⁺ ion, while the higher-energy bands are of the charge-transfer origin. Like in CsI:Tl, four emission bands of CsI:Pb have been found to belong to the main luminescence centres. Two emission bands, peaking at 3.1 and 2.6 eV, are suggested to arise from the triplet relaxed excited state of a Pb²⁺ ion. Two visible emission bands, peaking at 2.58 and 2.23 eV, are interpreted as the luminescence of an exciton localized near the Pb²⁺ ion.     

CsI:Na(CsI:Tl)荧光透过率和对X射线的转换因子

在建立模型的基础上,较为全面地分析了CsI:Na(CsI:Tl)X射线转换屏的荧光透过率及对X射线的转换因子,明确了转换因子与X光子能量、转换屏厚度、衬底反射率、荧光吸收系数之间的函数关系.计算表明,荧光透过率(及转换因子)与衬底反射率和1/(σL)值有较强的关系,为有较高的荧光透过率,实际制作的CsI:Na转换屏的1/(σL)值应在10以上,最好能达到30~40.在相同情况下,反射方式的转换因子高于透射方式.用增加厚度来提高转换因子时应考虑荧光透过率降低的负面影响.可选择适当的CsI:Na(CsI:Tl)厚度使转换因子最佳.