Initial stage of Pd adsorption on Si(111)7 × 7 surface studied by AES and EELS

The initial stage of adsorption of Pd on a Si(111)7 × 7 surface has been studied by means of Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS) and surface work-function change. For Pd deposition at room temperature (RT) the Si(LVV) Auger signal intensity decays in a broken linear line. The structure factor, defined as the intensity ratio of the subpeak to the main one in Si(LVV) Auger spectra, increases up to a maximum around one monolayer coverages. In EELS spectra two peaks, characteristics of Pd, appear at the completion of the first Pd layer. Pd atoms deposited on Si(111) at RT form initially flat layers of a few monolayers height without mixing with substrate Si atoms. For Pd deposition at a moderately high temperature (MT) of about 300°C, however, the structure factor for Si(LVV) Auger spectra does not change. EELS peaks, characteristic of Si substrate, remain clearly even beyond one monolayer coverage. Pd atoms deposited at MT are unstable and easily diffuse into the bulk. We present evidences to support the “screening” model for the bond-breaking mechanism at the Pd/Si interface.     

Nucleation and growth of Si on Pb monolayer covered Si(111) surfaces

With a scanning tunneling microscope (STM), we study the initial stage of nucleation and growth of Si on Pb monolayer covered Si(111) surfaces. The Pb monolayer can work as a good surfactant for growth of smooth Si thin films on the Si(111) substrate. We have found that nucleation of two-dimensional (2D) Pb-covered Si islands occurs only when the substrate temperature is high enough and the Si deposition coverage is above a certain coverage. At low deposition coverages or low substrate temperatures, deposited Si atoms tend to self-assemble into a certain type of Si atomic wires, which are immobile and stable against annealing to ~ 200 °C. The Si atomic wires always appear as a double bright-line structure with a separation of ~ 9 Å between the two lines. After annealing to ~ 200 °C for a period of time, some sections of Si atomic wires may decompose, meanwhile the existing 2D Pb-covered Si islands grow laterally in size. The self-assembly of Si atomic wires indicate that single Si adatoms are mobile at the Pb-covered Si(111) surface even at room temperature. Further study of this system may reveal the detailed atomic mechanism in surfactant-mediated epitaxy.     

Initial growth process and surface structure of Ag on Si(111) studied by low-energy Ion-Scattering Spectroscopy (ISS) and LEED-AES

The growth process of silver on a Si(111) substrate has been studied in detail by low-energy ion-scattering spectroscopy (ISS) combined with LEED-AES. Neon ions of 500 eV were used as probe ions of ISS. The ISS experiments have revealed that the growth at room temperature and at high temperature are quite different from each other even in the submonolayer coverage range. The following growth models have been proposed for the respective temperatures. At room temperature, the deposited Ag forms a two-dimensional (2D) island at around 2/3 monolayer (ML) coverage, where the Ag atoms are packed commensurately with the Si(111)1 substrate. One third of the substrate Si surface remains uncovered there. Then it starts to develop into Ag crystal, and at a few ML coverage a 3D island of bulk Ag crystal grows directly on the substrate. An intermediate layer, which covers uniformly the whole surface before the growth of Ag crystal, does not exist. At high temperatures (>~200°C), the well-known Si(111)√3-Ag layer is formed as an intermediate layer, which consists of 2/3 ML of Ag atoms and covers the whole surface uniformly. These Ag atoms are embedded in the first double layer of the Si substrate. It is concluded that the formation of the √3 structure needs relatively high activation energy which may originate from the large displacement of Si atoms owing to the embedment of the Ag atoms, and does not proceed below about 200°C. The most stable state of the Ag atoms on the outermost Si layer is in the shape of an island, both for the Si(111) surface and for the Si(111)√3-Ag surface.     

Structure of the Ag on Si(111) 7 × 7 interface by means of surface exafs

Polarization dependent surface extended X-ray absorption fine structure (SEXAFS) measurements are used to determine the structure of the Ag on Si(111)7 × 7 system at the early stages (< 3 monolayers (ML)) of interface formation. At room temperature (RT) Ag is found to initially (< 0.5 ML) chemisorb in the threefold hollow site, approximately 0.7 Å above the outermost Si layer with an average Ag-Si distance of 2.48±0.05 Å. Above monolayer coverage the SEXAFS spectrum is dominated by the Ag-Ag distance indicating Ag island formation on the surface. Upon heating (200 ?T? 600°C) a (√3 ×√3)R30° LEED pattern is observed. At the lowest coverage ( < 0.7 ML) this pattern is determined to arise from Ag atoms which are embedded in the threefold hollows, ~ 0.7 Å below the first and above the second Si layer, with a Ag-Si distance of 2.48 ± 0.04 Å. At higher coverage ($\text{\$}\text{?}$1 ML) Ag clusters are found to grow on this interface with the same Ag-Ag distance as in Ag metal. Our results are discussed in the context of previous experimental and theoretical results.     

Angle resolved photoemission measurements on AgSi(111) 7 × 7 interfaces

The AgSi(111) interface is investigated by LEED, AES and angle resolved photoemission spectroscopy using 50 eV synchrotron radiation in p-polarization. Results on room temperature (RT) silver growth on Si(111) 7 × 7 are characterized by an evolution of the LEED pattern and of the d band shape which is consistent with 2D island formation in the submonolayer range. When the Ag coverage (Θ) is increased, a progressive build-up of Ag layers occurs with a possible interdiffusion of the atomic constituents. The ordered $\text{Si(111)}\text{3}\text{×}\text{3}\text{R(30°)Ag}$ structure (R₃) obtained by annealing a 1 ML RT deposit gives rise to new interface states near E_F. In contrast to the RT deposit at the same Θ, two well defined d band peaks are present while the bulk Si emission near 3.4 eV is clearly seen. The R₃ data would favour recent crystallographic models which conclude to an embedment of the Ag atoms in a threefold hollow adsorption site.     

Effect of adsorbed Sn on Ge diffusivity on Si(111) surface

The effect of adsorbed Sn as a surfactant on Ge diffusion on a Si(111) surface has been studied by Low Energy Electron Diffraction and Auger Electron Spectroscopy. The experimental dependence of Ge diffusion coefficients on the Si(111) surface versus temperature in the presence of adsorbed Sn atoms has been measured in the range from 300 to 650°C. It has been shown that at a Sn coverage of about 1 monolayer the mobility of Ge atoms increases by several orders of magnitude.      

The adsorption of activated nitrogen on platinum single crystal faces

The adsorption of activated nitrogen on a stepped Pt(S)-[9(111) × (111)] face was investigated by LEED, AES and flash desorption. Nitrogen was supplied to the crystal from a high frequency discharge tube. For comparison some orienting measurements were also carried out on smooth (111) and (100) platinum faces. Activated nitrogen is adsorbed at room temperature on all three faces up to about half a monolayer coverage. No additional LEED patterns indicating long range order of the adsorbed layer were found. By flash heating a small desorption peak at 120°C and a large peak between 175 and 230°C depending on the initial coverage were observed on the (111) type faces. The desorption can be described approximately by a second order rate law with an energy of activation of 25± 3 kcal/mole. No influence of surface steps on the properties of the adsorbed layer was detected. On the (100) face two coverage independent desorption maxima at 120 and 170°C of about equal intensities were found.     

Critical diameters and temperature domains for MBE growth of III–V nanowires on lattice mismatched substrates

We report on the growth properties of InAs, InP and GaAs nanowires (NWs) on different lattice mismatched substrates, in particular, on Si(111), during Au‐assisted molecular beam epitaxy (MBE). We show that the critical diameter for the epitaxial growth of dislocation‐free III–V NWs decreases as the lattice mismatch increases and equals 24 nm for InAs NWs on Si(111), 39 nm for InP NWs on Si(111), 44 nm for InAs NWs on GaAs(111)B, and 110 nm for GaAs NWs on Si(111). When the diameters exceed these critical values, the NWs are dislocated or do not grow at all. The corresponding temperature domains for NW growth extend from 320 °C to 340 °C for InAs NWs on Si(111), 330 °C to 360 °C for InP NWs on Si(111), 370 °C to 420 °C for InAs NWs on GaAs(111)B and 380 °C to 540 °C for GaAs NWs on Si(111). Experimental values for critical diameters are compared to the previous findings and are discussed within the frame of a theoretical model. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of surface reconstruction on the adsorption of Ge on clean Si(111)

The effect of ultrahigh vacuum deposition of Ge below and at monolayer (ML) coverage onto a 7 × 7 reconstructed clean Si(111) surface held at room temperature is studied by low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS). The results are compared to those obtained on 2 × 1 reconstructed clean Si(111) : (i) the Si dangling bond states are replaced by Ge dangling bond states at submonolayer coverages in both cases; (ii) the 7 × 7 reconstruction persists below 1 ML, it is not replaced by a ? 3 × ? 3 R30° at 1/3ML as it was on the 2 × 1; and (iii) the coverage below 1 ML is not homogeneous on the 7 × 7 reconstruction. This behaviour can be explained by the influence of the inhomogeneties associated with the 7 × 7 reconstruction.     

Catalytic action of gold atoms on the oxidation of Si(111) surfaces

Auger spectroscopy, electron energy loss spectroscopy and ion depth profiling techniques, under ultra high vacuum conditions, have been used in a comparative study of the oxidation of clean and gold precovered silicon (111) surfaces. Exposure of a Si surface covered by a few Au monolayers to an oxygen partial pressure induces the formation of SiO₄ tetrahedra even at room temperature. In contrast, oxidation under the same conditions of a clean Si(111) surface leads to the well known formation of a chemisorbed oxygen monolayer. In the case of the Au covered surfaces, the enhancement of the oxide growth is attributed to the presence of an AuSi alloy where the hybridization state of silicon atoms is modified as compared to bulk silicon. This Au catalytic action has been investigated with various parameters as the substrate temperature, oxygen partial pressure and Au coverage. The conclusions are two fold. At low temperature (T < 400°C), gold atoms enhance considerably the oxidation process. SiO₄ tetrahedra are readily formed even at room temperature. Nevertheless, the SiO₂ thickness saturates at about one monolayer, this effect being attributed to the lack of Si atoms alloyed with gold in the reaction area. By increasing the temperature (from 20°C to ～400°C), silicon diffusion towards the surface is promoted and a thicker SiO₂ layer can be grown on top of the substrate. In the case of the oxidation performed at temperature higher than 400°C, the results are similar to the one obtained on a clean surface. At these temperatures, the metallic film agglomerates into tridimensional crystallites on top of a very thin AuSi alloyed layer. The fact that the latter has no influence on the oxidation is attributed to the different local arrangement of atoms at the sample surface.     

Growth mode and interface structure of Ag on the HF-treated Si(111):H surface

A growth mode and interface structure analysis has been performed for Ag deposited at a high temperature of 300°C on the HF-treated Si(111):H surface by means of medium-energy ion scattering and elastic recoil detection analysis of hydrogen. The measurements show that Ag grows in the Volmer-Weber mode and that the Ag islands on the surface are epitaxial with respect to the substrate. The preferential azimuthal orientation is A-type only when Ag is deposited slowly. The interface does not reconstruct to the √3 × √3-Ag structure, which is normally observed for Ag deposition above 200°C on the Si(111)7 × 7 surface, but retain bulk-like structure. The presence of hydrogen at the interface is demonstrated after deposition of thick (1100 Å) Ag films. However, the amount of hydrogen at the interface is not a full monolayer. This partial desorption of hydrogen from the interface explains why the Schottky barrier heights of Ag/Si(111):H diodes are close to those of Ag/Si(111)7 × 7 and Ag/Si(111)2 × 1.     

Effect of dislocations on the shape of islands during silicon growth on the oxidized Si(111) surface

The formation of dislocation-rich and dislocation-free silicon islands during growth in the absence of mechanical stresses has been studied by scanning tunneling microscopy. The rounded shape of islands obtained at growth temperatures of 400–500°C on the oxidized Si(111) surface is associated with the presence of dislocations within them. The transfer of atoms from the oxidized surface to the islands occurs due to the barrier of the potential energy at the SiO₂/Si boundary. The {111} and {311} facets dominate in the shape of the islands grown at 500–550°C. Their appearance indicates the absence of the threading dislocations in the islands and that the growth is limited by the stage of the nucleation of a new atomic layer.     

Electronic structure of Yb/H－Si (111) interface

Photoemission spectra are measured for Yb covered surface of wet-chemically-etched H－Si (111). The results reveal that the lattice structure of the H－Si (111) surface is stable against the deposition of Yb atoms. X-ray photoemission spectra indicate the formation of a polarized (dipole) surface layer, with the silicon negatively charged. Ultraviolet photoemission spectra exhibit the semiconducting property of the interface below one monolayer coverage. Work function variation during the formation of the Yb/H－Si (111) interface is measured by the secondary-electron cutoff in the ultraviolet photoemission spectral line. The largest decrease of work function is ～1.65eV. The contributions of the dipole surface layer and the band bending to the work function change are determined to be ～1.15eV and ～0.5eV, respectively. The work function of metal Yb is determined to be ～2.80±0.05eV.     

Scanning tunneling microscopy observation of ultrathin epitaxial CoSi<Subscript>2</Subscript>(111) films grown at a high temperature

Scanning tunneling microscopy (STM) is used to study the basic laws of growth of ultrathin epitaxial CoSi₂(111) films with Co coverages up to 4 ML formed upon sequential deposition of Co and Si atoms taken in a stoichiometric ratio onto the Co–Si(111) surface at room temperature and subsequent annealing at 600–700°C. When the coverage of Co atoms is lower than ~2.7 ML, flat CoSi₂ islands up to ~3 nm high with surface structure 2 × 2 or 1 × 1 grow. It is shown that continuous epitaxial CoSi₂ films containing 3–4 triple Si–Co–Si layers grow provided precise control of deposition. CoSi₂ films can contain inclusions of the local regions with (2 × 1)Si reconstruction. At a temperature above 700°C, a multilevel CoSi₂ film with pinholes grows because of vertical growth caused by the difference between the free energies of the CoSi₂(111) and Si(111) surfaces. According to theoretical calculations, structures of A or B type with a coordination number of 8 of Co atoms are most favorable for the CoSi₂(111)2 × 2 interface.     

The growth mode of aluminium on silver (111)

The geometric and electronic structures occuring during the growth of Al on a single crystal Ag(111) surface have been studied using a combination of low energy electron diffraction (LEED), Auger electron spectroscopy (AES), energy loss spectroscopy (ELS) and work function measurements. The Auger signal versus deposition time plots, which were used to monitor the growth mode, are shown to behave in an identical fashion to that expected for layer-by-layer (Frank-van der Merwe) growth. LEED was used to determine the lateral periodicity of thin Al films and shows that Al forms, at very small coverages, 2D islands which have the same structure as the Ag(111) substrate and which grow together to form the first monolayer. At substrate temperatures of 150 K a well defined (1 × 1) structure with the same orientation as the underlying Ag(111) can be seen up to at least 12 ML. After completion of the third monolayer the ELS spectrum approached that observed for bulk aluminium. At a coverage of 3 ML the work function decreases by 0.4 eV from the clean silver value.     

Effect of H2O chemisorption on passivation of Ge(100) surface studied by scanning tunneling microscopy

The electronic passivation of a Ge(100) surface, via the chemisorption of H₂O at room temperature (RT), and the temperature dependence of H₂O coverage were investigated using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). With a saturation H₂O dose at RT, a highly-ordered structure, due to the dissociative chemisorption of H₂O, was observed on a Ge(100) surface with a coverage of 0.85 monolayers (ML). Annealing the room temperature H₂O-dosed Ge surface to 175 °C decreased the coverage of H₂O to 0.6 ML. Further annealing at 250 °C decreased the coverage of H₂O sites to 0.15 ML, and the surface reconstruction of Ge dimers was observed over much of the surface. Annealing above 300 °C induced Ge suboxide structures, similar to the oxygen-dosed Ge surface. STS measurements confirmed that the surface dangling bond states near Fermi energy are removed by the H₂O chemisorption because the dangling bonds of Ge atoms are terminated by ―OH and ―H. The H₂O pre-dose at room temperature provides a template for the ultrathin passivation of Ge(100) surface via atomic layer deposition (ALD) at RT, since near monolayer nucleation can be obtained with a 1/2 hydroxylated and 1/2 hydrogenated Ge surface.     

Improved structural ordering in sexithiophene thick films grown on single crystal oxide substrates

We report on sexithiophene films, about 150-nm thick, grown by thermal evaporation on single-crystal oxides and, as comparison, on Si/SiO₂. By heating the entire deposition chamber at 100°C we obtain standing-up oriented molecules all over the bulk thickness. Surface morphology shows step-like islands, each step being only one monolayer in height. The constant and uniform warming of the molecules obtained by heating the entire deposition chamber allows a stable diffusion-limited growth process. Therefore, the regular growth kinetics is preserved when increasing the thickness of the film. Electrical measurements on differently structured films evidence the impact of the inter-island separation region size on the main charge-transport parameters.     

Change in adsorption bond length with coverage for KAl(111)

The local bond geometry of K adsorbed on Al(111) at low temperature has been studied by photoelectron diffraction (PED) as a function of K coverage. It is found that K atoms occupy on-top sites in the coverage range 0.05-0.4 monolayer and that the KAl bond length increases by 0.17 Å over this coverage range. The reliability of this result is supported by PED studies of the (√3 × √3)R30° structures formed by adsorption of one-third monolayer Na and K at 300 K, and K at 150 K, which give results in quantitative agreement with previous structure determinations by SEXAFS and LEED.     

Growth and characterization of silicon nitride films on various underlying materials

Characteristics of silicon nitride (SiN_x:H) films, grown by plasma enhanced chemical vapor deposition (PECVD) on various metals such as Ta, IrMn, NiFe, Cu, and CoFe at various temperatures down to 100 °C, were studied using measurements of BHF etch rate, surface roughness and Auger electron spectroscopy (AES). The results were compared with those obtained for SiN_x:H films on Si. The deposition rate of SiN_x:H films increased slightly as deposition temperature decreased, and showed a weak dependence on the underlying materials. The surface of the nitride films deposited on all underlying materials at lower temperatures (below 150 °C) became rougher. In particular, a bubble-like surface was observed on the nitride film deposited on NiFe at 100 °C. At higher deposition temperatures (above 200 °C), SiN_x:H films on all the above metals had small RMS values, except for films on Cu which cracked at 250 °C. BHF (10:1) etch rate increased dramatically for nitride films deposited below 150 °C. For different underlying films, the BHF etch rate was quite different, but exhibited the same trend with decrease in deposition temperature. AES measurements showed that Si and N concentrations in the SiN_x:H films were only slightly different for the various deposition temperatures and underlying materials. AES depth profile of nitride films indicated that both surface O content and the depth of oxygen penetrating into SiN_x:H increased for low temperature-deposited films. However, there was no observed oxygen signal from within the films, even for films deposited at 100 °C, and both Si and N concentrations were uniform throughout the film. Received: 26 October 2001 / Accepted: 2 March 2001 / Published online: 20 June 2001     

Reactive epitaxy of cobalt disilicide on Si(100)

The growth of cobalt disilicide on the Si(100) surface by reactive epitaxy at T=350°C was studied within the 10–40 ML cobalt coverage range. A new method of mapping the atomic structure of the surface layer by inelastically scattered medium-energy electrons was employed. The films thus formed were shown to consist of CoSi₂(221) grains of four azimuthal orientations turned by 90° with respect to one another. This domain structure originates from substrate surface faceting by (111) planes, a process occurring during silicide formation. B-oriented CoSi₂(111) layers grow epitaxially on (111) facets.