Resonance Raman study of He+ ion implanted nanostructured ZnS

ZnS nanocrytsals of size ∼2.5 nm were prepared by chemical precipitation technique. Pressed pellets of nanostructured ZnS were implanted with He⁺ ions at doses of 5 × 10¹⁴, 1 × 10¹⁵ and 5 × 10¹⁵ ions/cm². Raman spectra of both unimplanted and He⁺ ion implanted samples were recorded with ultraviolet (UV) excitation. LO, 2LO, 2TO, (LO + TA) and (2TO − TA) modes of ZnS were observed in the resonance Raman spectra of the unimplanted nanostructured ZnS samples. In addition, a surface mode was observed at 294 cm⁻¹. With the implantation of He⁺ ions, the 2TO mode disappeared and 2LO mode became prominent and this observation was attributed to the decrease in band gap of ZnS nanocrytsals due to ion implantation. The exciton–LO phonon coupling strength was determined from the intensity ratio of 2LO to LO modes and it was observed that the exciton–LO phonon coupling strength increases with increase in implantation dose. In the present work, we report for the first time the observation of 2TO mode in the resonance Raman spectrum of nanostructured ZnS and also the modification of exciton–LO phonon coupling strength of semiconductor nanoparticles by ion implantation. Copyright © 2008 John Wiley & Sons, Ltd.     

Energy spectrum of (Sn0.65Pb0.35)0.95Ge0.05Te solid solutions

The paper reports the study on the resistivity ρ and thermoemf S of the (Sn_0.65Pb_0.35)_0.95Ge_0.05Te solid solution layers. The dependences of ρ and S on the hole concentrations in the range 3×10¹⁹–2×10²¹ cm^?3 exhibit jumps in the resistivity and thermoemf minima at close hole concentrations p ₁≈9×10¹⁹ cm^?3, p ₂≈2.5×10²⁰ cm^?3, and p ₃≈4.5×10²⁰ cm^?3. The observed jumps and minima suggest a complex structure of the valence band and the presence of critical points in the energy spectrum of holes. According to the data for SnTe, the critical points in the energy spectrum at the given hole concentrations are identified as the Σ-extremum, saddle point LΣ, and Δ-extremum, respectively.     

Coherent Stokes and anti-Stokes Raman spectra of the ν1 (A1) and ν2 (E) bands of SF6 and UF6

Coherent Stokes and anti-Stokes Raman scattering are used to study the ν₁ and ν₂ spectral band profiles of UF₆ and SF₆. Most of the observed SF₆ “hot” bands are assigned, leading to evaluations of the anharmonicity constants X_ij: X₁₂ = ?(2.80 ± 0.30) cm^?1, X₁₄ = ?(1.00 ± 0.15) cm^?1, X₁₅ = ?(1.00 ± 0.15) cm^?1. For UF₆, a tentative assignment of the “hot” bands is made: X₁₂ = ?(1.80 ± 0.30) cm^?1, X₁₃ = ?(1.60 ± 0.30) cm^?1, X₁₄ = ?(0.20 ± 0.10) cm^?1, X₁₅ = ?(0.25 ± 0.10) cm^?1, and X₁₆ = ?(0.10 ± 0.05) cm^?1. Parameters such as the vibration-rotation coupling constants are determined. For SF₆: α = (7 ± 2) × 10^?5 cm^?1 for the ν₂ band and α = ?(1.02 ± 0.01) 10^?4 cm^?1 for the ν₁ band. The calculated spectral profiles of the coherent Stokes or anti-Stokes spectra, which are in good agreement with experimental results, give values for the resonant and nonresonant parts of the susceptibility in both molecules. They also show, in some cases, the influence of neighboring combination bands.     

The analysis of symmetric rotor Raman spectra: The pure rotational spectrum of 11BF3

The pure rotational Raman spectrum of ¹¹BF₃ has been photographed. Great care was taken in the analysis to consider all the unresolved components under each observed Raman line profile. If this is ignored, systematic errors result. The final set of molecular constants obtained was B₀ = 0.34502(±3 × 10^?5)cm^?1, D_J = 4.38(±0.10) × 10^?7cm^?1, and D_JK = ?9.1(±1.0) × 10^?7cm^?1.     

Second order Raman spectrum and phase transition in InSe

The Raman spectrum of InSe was taken at room temperature and at liquid nitrogen temperature. We found that the TO (199 cm^?1) and LO (212 cm^?1) modes, together with their overtones and combinations at 400, 416 and 423 cm^?1 disappeared at lower temperatures. We attribute the vanishing of these modes at low temperatures to a change of phase from ? to β polytype.     

Optic-mode coupling in ferroelectric gadolinium molybdate

Separate measurements of the A₁(TO) and A₁(LO) Raman spectra of ferroelectric gadolinium molybdate at 80°K and above have elucidated the origin of the anomalous temperature dependence of the two lowest frequency lines in the A₁(TO) spectrum. The observed behavior is postulated to be the result of coupling among modes at 44.5, 51.5, and 83 cm^?1 (at 80°K). The 44.5 and 83 cm^?1 modes become the degenerate, soft zone-boundary modes of the paraelectric phase while the 51.5 cm^?1 mode changes to B₂ symmetry. The two lowest frequency lines are the same as those observed previously in i.r. absorption.     

Synthesis of Ge-Sn at high pressure and high temperature in a laser-heated diamond anvil cell

Ge–Sn compound is predicted to be a direct band gap semiconductor with a tunable band gap. However, the bulk synthesis of this material by conventional methods at ambient pressure is unsuccessful due to the poor solubility of Sn in Ge. We report the successful synthesis of Ge–Sn in a laser-heated diamond anvil cell (LHDAC) at ~7.6 GPa &; ~2000 K. In situ Raman spectroscopy of the sample showed, apart from the characteristic Raman modes of Ge TO (Г) and β-Sn TO (Г), two additional Raman modes at ~225 cm^?1 (named Ge–Sn₁) and ~133 cm^?1 (named Ge–Sn₂). When the sample was quenched, the Ge–Sn₁ mode remained stable at ~215 cm^?1, whereas the Ge–Sn₂ mode had diminished in intensity. Comparing the Ge–Sn Raman mode at ~225 cm^?1 with the one observed in thin film studies, we interpret that the observed phonon mode may be formed due to Sn-rich Ge–Sn system. The additional Raman mode seen at ~133 cm^?1 suggested the formation of low symmetry phase under high P–T conditions. The results are compared with Ge–Si binary system.     

Magnetic moment relaxation of a shallow acceptor center in heavily doped silicon

Results of studying the temperature dependence of the residual polarization of negative muons in crystalline silicon with germanium (9×10 ¹⁹ cm ^?3 ) and boron (4.1×10 ¹⁸ , 1.34×10 ¹⁹ , and 4.9×10 ¹⁹ cm ^?3 ) impurities are presented. It is found that, similarly to n-and p-type silicon samples with impurity concentrations up to ～10 ¹⁷ cm ^?3 , the relaxation rate ν of the magnetic moment of a _μ Al acceptor in silicon with a high impurity concentration of germanium (9×10 ¹⁹ cm ^?3 ) depends on temperature as ν～T ^q , q≈3 at T=(5–30) K. An increase in the absolute value of the relaxation rate and a weakening of its temperature dependence are observed in samples of degenerate silicon in the given temperature range. Based on the experimental data obtained, the conclusion is made that the spin-exchange scattering of free charge carriers makes a significant contribution to the magnetic moment relaxation of a shallow acceptor center in degenerate silicon at T?30 K. Estimates are obtained for the effective cross section of the spin-exchange scattering of holes (σ _h ) and electrons (σ _e ) from an Al acceptor center in Si: σ _h ～10^?13 cm² and σ _e ～8×10^?15 cm² at the acceptor (donor) impurity concentration n _a (n _d )～4×10¹⁸ cm^?3.     

Rotational study and hyperfine effects of the (0,0) band of the B2Σ-X2Σ system of ScS

Rotational analysis of the (0,0) band of the B²Σ-X²Σ transition of ScS is reported. Spectrographic illustration of a hyperfine coupling transition in the ground state is demonstrated for the first time. This enables an order of magnitude to be obtained for γ″ (～0.003 cm^?1). The results for the other constants were: X state: B″ = 0.1971 cm^?1, D″ = 5 × 10^?8cm^?1, 4b = 0.23 cm^?1 (equal to that for ScO within the limits of measurement uncertainty); B state: B′ = 0.1853 cm^?1, D′ = 6 × 10^?8cm^?1, γ′ = ?0.0594 cm^?1, which can be compared with p_A²Π = 0.060 cm^?1. It was found that the two excited states A²Π and B²Σ constitute an excellent example of pure precession (p_pp = 0.058 cm^?1, and this enables the vibrational levels of A²Π to be numbered.     

Analysis of the ν6(A″2) band of cyclopropane-d6 recorded under high resolution

The parallel band ν₆(A″₂) of C₃D₆ near 2336 cm^?1 has been studied with high resolution (Δν = 0.020 – 0.024 cm^?1) in the infrared. The band has been analyzed using standard techniques and the following parameters have been determined: B″ = 0.461388(20) cm^?1, D″_J = 3.83(17) × 10^?7 cm^?1, ν₀ = 2336.764(2) cm^?1, α^B = (B″ ? B′) = 8.823(12) × 10^?4 cm^?1, β^J = (D″_J ? D′_J) = 0, and α^C = (C″ ? C′) = 4.5(5) × 10^?4 cm^?1.     

Raman and infrared spectra of CdIn2S4 and ZnIn2S4

Four one-phonon Raman lines have been found in CdIn₂S₄ (ZnIn₂S₄) spinels at 92 (72) cm^-1, 186 (184) cm^-1, 246 (253) cm^-1, and 367 (372) cm^-1 for incident photon energies well below the energy gap E_G ～ 2.4 (2.2) eV at 300 K. For photon energies close to E_G, the 367 cm^-1 mode underwent a resonant enhancement in CdIn₂S₄ and four infrared active but Raman forbidden F_1u modes appeared in the CdIn₂S₄ and ZnIn₂S₄ Raman spectra: TO modes at 226 (221) cm^-1 and 309 (312) cm^-1, and LO modes at 274 (272) cm^-1 and 340 (342) cm^-1.     

Analysis of the 2ν3 band of 12CD3F at 5.06 μm recorded under high resolution

The 2ν₃(A₁) band of ¹²CD₃F near 5.06 μm has been recorded with a resolution of 20–24 × 10^?3 cm^?1. The value of the parameter (α^B ? α^A) for this band was found to be very small and, therefore, the K structure of the R(J) and P(J) manifolds was unresolved for J < 15 and only partially resolved for larger J values. The band was analyzed using standard techniques and values for the following constants determined: ν₀ = 1977.178(3) cm^?1, B″ = 0.68216(9) cm^?1, D″_J = 1.10(30) × 10^?6 cm^?1, α^B = (B″ ? B′) = 3.086(7) × 10^?3 cm^?1, and β^J = (D″_J ? D′_J) = ?3.24(11) × 10^?7 cm^?1. A value of α^A = (A″ ? A′) = 2.90(5) × 10^?3 cm^?1 has been obtained through band contour simulations of the R(J) and P(J) multiplets.     

Sol-hydrothermally derived gadolinium oxide (Gd2O3) nanorods and tamarind-like shape evolution under 80 MeV C6+ ion impact

The present work highlights swift heavy ion irradiation-induced shape evolution of gadolinium oxide (Gd₂O₃) nanorods synthesized via a sol-hydrothermal route. Upon dispersing Gd₂O₃ nanorods in the polyvinyl alcohol matrix, thin solid films were cast on borosilicate glass substrates. The films were then exposed to 80?MeV carbon-ion irradiation, while fluence was varied in the range of 1×10¹¹–3×10¹²?ions/cm². The post analyses were carried out by using X-ray diffraction, high resolution transmission electron microscopy (TEM) and Raman spectroscopy studies. An apparently observable shortening of length (L) and diameter (D) of the nanorods can be revealed through the TEM imaging analyses. Moreover, while exhibiting an aspect ratio (L/D) between 3.3 and 4.7, the nanorods were found to exist in the form of bunching at higher fluences. The irradiation-induced tamarind-like shape evolution at higher fluences was attributed to the overlapping of ion impacts on certain regions of the nanorods. The most intense Raman active peak of the pristine sample located at ～360?cm^?1 was seen to experience blue-shifting (～375?cm^?1) when irradiated at the highest fluence (～3×10¹²?ions/cm²). An altered shape evolution of a thermally and mechanically stable oxide system by the energetic ion impact would bring in new insights as regards construction of surface patterns and their potential use in miniaturized devices.     

Lithium diffusion in Li<Subscript>3</Subscript>V<Subscript>2</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>-based electrodes: a joint analysis of electrochemical impedance,cyclic voltammetry,pulse chronoamperometry,and chronopotentiometry data

In order to establish the mechanism and to determine the parameters of lithium transport in electrodes based on lithium-vanadium phosphate (Li₃V₂(PO₄)₃), the kinetic model was designed and experimentally tested for joint analysis of electrochemical impedance (EIS), cyclic voltammetry (CV), pulse chronoamperometry (PITT), and chronopotentiometry (GITT) data. It comprises the stages of sequential lithium-ion transfer in the surface layer and the bulk of electrode material’s particles, including accumulation of lithium in the bulk. Transfer processes at both sites are of diffusion nature and differ significantly, both by temporal (characteristic time, τ) and kinetic (diffusion coefficient, D) constants. PITT data analysis provided the following D values for the predominantly lithiated and delithiated forms of the intercalation material: 10^?9 and 3 × 10^?10 cm² s^?1, respectively, for transfer in the bulk and 10^?12 cm² s^?1 for transfer in the thin surface layer of material’s particles. D values extracted from GITT data are in consistency with those obtained from PITT: 3.5–5.8 × 10^?10 and 0.9–5 × 10^?10 cm² s^?1 (for the current and currentless mode, respectively). The D values obtained from EIS data were 5.5 × 10^?10 cm² s^?1 for lithiated (at a potential of 3.5 V) and 2.3 × 10^?9 cm² s^?1 for delithiated (at a potential 4.1 V) forms. CV evaluation gave close results: 3 × 10^?11 cm² s^?1 for anodic and 3.4 × 10^?11 cm² s^?1 for cathodic processes, respectively. The use of complex experimental measurement procedure for combined application of the EIS, PITT, and GITT methods allowed to obtain thermodynamic E,c dependence of Li₃V₂(PO₄)₃ electrode, which is not affected by polarization and heterogeneity of lithium concentration in the intercalate.     

Raman scattering and electrical studies of the phase stability in the Hg<Subscript>1−x</Subscript>Cd<Subscript>x</Subscript>Te

Raman scattering is performed to access phase stability in the boron-implanted Hg_0.7Cd_0.3Te with fluences ranging from 1 × 10¹² to 1 × 10¹⁵ cm^?2. Threshold fluence for the formation of an amorphous phase is invoked here using Thomas–Fermi statistical model. Asymmetric broadening and red shift of the Raman active HgTe-like LO phonon mode are observed with varying fluencies. Electrical properties such as sheet carrier concentration and mobility are also changed with the fluence and reach their saturated values beyond threshold fluence of 5 × 10¹³ cm^?2. Threshold fluence for the formation of amorphous phase is also validated by the Raman measurements and electrical transport properties in the implanted layers. The excess free energy of 6.8 kJ/mole is found corresponding to the threshold fluence for phase transition.     

High resolution infrared spectrum of the ν4 band of DCCF

The bending vibration-rotation band ν₄ of DCCF was studied. The measurements were carried out with a Fourier spectrometer at a resolution of about 0.03 cm^?1. The constants B₀=0.29141(1)cm^?1, α₄=?5.02(2)×10^?4cm^?1, q₄=4.52(3)×10^?4cm^?1, and D₀=9.2(4)×10^?8cm^?1 were derived. The rotational analysis of the “hot” bands 2ν₄(Δ) ← ν₄(II) and 2ν₄(Σ⁺) ← ν₄(II) was performed. In addition, the “hot” bands ν₄ + ν₅ ← ν₅ were assigned. A set of vibrational constants involved was derived.     

Raman-gain,linewidth, and effectiveg-value with spin-flip-Raman scattering in inSb

In this paper we report on measurements of spin-flip-Raman gain inn-InSb as a function of the magnetic field. The measurements were carried out at temperatures of 1.8 K and 4.2 K and at a carrier concentration of 1.35×10¹⁵ cm^?3. The Raman cross sections obtained from these results, e.g. 1.25×10^?20 cm²/sr at a magnetic field of 10 kG and a pump frequency of 1884.35 cm^?1, agree very well with those theoretically predicted by Wherrett and Wolland. Furthermore, these measurements yield line shapes and linewidths of the spontaneous scattering (100–1500 MHz) and allow the determination of the effectiveg-value with an accuracy known from ESR-investigations. These results are discussed in terms of already published theoretical investigations.     

Heterodiffusion of chromium and cobalt in liquid iron

The heterodiffusion has been studied by the method of stationary diffusion source. In that method the saturated radioactive vapour of the diffusing element comes into contact with the liquid in which diffusion is being studied. Two variants of that method were applied and the diffusion coefficients of chromium and cobalt in liquid iron were determined, i.e.D _{(Cr→Fe, 1860K)}= =4·9×10^?5cm²/s andD _{(Co→Fe, 1820K)}=5×10^?5cm²/s, respectively. The values of maximum concentration of chromium in Fe-samples after diffusion were of the order of 10^?1 to 10^?2 wt-%, those of cobalt of 10^?4 wt-%. This experimental method is rather simple and the results obtained are in good conformity with other measurements.     

Shock-tube determination of absorption cross sections and A2Δ − X2Π band transition moments of SiH

The overall absorption cross sections and electronic transition moments of the A²Δ ? X²Π band system of SiH have been determined by using an absorption technique with a shock tube at temperatures of 2600–3800 K over the wavelengths of 150–650 nm. Absorption cross sections are shown to be dominated by continua. The possible contributions to the overall cross sections by a low-lying ⁴Σ^- and a high-lying ⁴Σ^- state are discussed. At 200, 228, 340, 405, and 550 nm, the continuum cross sections are (2.9±1.0)×10^-17, (2.0±0.5)×10^-17, (3.2±0.6)×10^-18, (3.8±0.6)×10^-18, and (1.8±0.8)×^-18cm², respectively. The overall emission intensity and the Si+H→SiH+hv radiative recombination rate are (6.7± 2.3)×10^-35(3500/T)^0.7(Si)(H) watt-cm^-3 and (1.3±0.4)×10^-17(3500/T)^1.1(Si)(H) cm^-3-s^-1, respectively. The A ? X transition moments are 0.12±0.04a.u. for the (0, 0) and (1, 1) bands. The intensity of each branch in the A ? X (0, 0) band follows approximately the prediction based on the Hönl-London factors of Kovacs. The data are applied to the study of the flow field around a spacecraft entering the Jovian atmosphere.     

Electric dipole moment and chromoelectric dipole moment of the top quark inSU(3)C×SU(3)L×U(1)X model

We show that inSU(3) _C ×SU(3) _L ×U(1) _X model, the leading contribution to the electric and chromolelectric dipole moment of the top quark is due to the one-loop diagrams which come from exchanging the charged and neutral Higgs bosons. The dipole moments are typically of the order of 10^?19 e-cm and 10^?19 g-cm respectively, for the values of relative phases of the vev's such that CP violation is maximal. From an experimental point of view, theq ² dependence of dipole moment form factors is given.