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1.
The surface morphology of Pt(111) was investigated by scanning tunneling microscopy after 5 keV Ar+ ion bombardment at grazing incidence in dependence of the ion fluence and in the temperature range between 625 and 720 K. The average erosion rate was found to be strongly dependent on the ion fluence and the substrate temperature during bombardment. This dependence is traced back to the variation of step concentration with temperature and fluence. We develop a simple model allowing us to determine separately the constant sputtering yields for terraces and for impact area stripes in front of ascending steps. The experimentally determined yield of these stripes--the step-edge sputtering yield--is in excellent agreement with our molecular dynamics simulations performed for the experimental situation.  相似文献   

2.
The sputtering of clusters consisting of 13, 27, and 75 copper atoms from the (0001) graphite surface under bombardment by Cu2 dimers with energies of 100, 200, and 400 eV has been simulated using the molecular dynamics method. A comparative analysis of the distributions of backscattered particles and their energies over polar angles and the energy distributions of sputtered atoms has been performed. The factors responsible for the large sputtering yield from surface clusters under their bombardment with dimers as compared to copper and xenon monomers have been discussed. It has been demonstrated that, in the case of bombardment with dimers, the substantial role in the sputtering of surface clusters is played by the overlap of collision cascades initiated by each atom of the incident dimer. The differences in the sputtering under cluster and atom bombardments are especially pronounced in the case of large surface clusters.  相似文献   

3.
The angular dependence of the sputtering yield and the spatial distribution of particles ejecting from a boron nitride polycrystal with a wurtzite structure in the temperature range from 0 to 2800°C under bombardment with 300 eV xenon ions are calculated by the molecular dynamics method. A reduction of steepness of the curves of angular dependence of boron nitride sputtering with increasing temperature is revealed. Features of the obtained distributions are analyzed on the basis of mechanisms of interaction of slow heavy ions with surface target atoms.  相似文献   

4.
邹雪晴  薛建明  王宇钢 《中国物理 B》2010,19(3):36102-036102
Physical and chemical phenomena of low-energy ion irradiation on solid surfaces have been studied systematically for many years, due to the wide applications in surface modification, ion implantation and thin-film growth. Recently the bombardment of nano-scale materials with low-energy ions gained much attention. Comared to bulk materials, nano-scale materials show different physical and chemical properties. In this article, we employed molecular dynamics simulations to study the damage caused by low-energy ion irradiation on copper nanowires. By simulating the ion bombardment of 5 different incident energies, namely, 1~keV, 2~keV, 3~keV, 4~keV and 5~keV, we found that the sputtering yield of the incident ion is linearly proportional to the energies of incident ions. Low-energy impacts mainly induce surface damage to the nanowires, and only a few bulk defects were observed. Surface vacancies and adatoms accumulated to form defect clusters on the surface, and their distribution are related to the type of crystal plane, e.g. surface vacancies prefer to stay on (100) plane, while adatoms prefer (110) plane. These results reveal that the size effect will influence the interaction between low-energy ion and nanowire.  相似文献   

5.
Low energy ion beam assisted deposition (IBAD) was employed to prepare Ag films on Mo/Si (100) substrate. It was found that Ag films deposited by sputtering method without ion beam bombardment were preferred (111) orientation. When the depositing film was simultaneously bombardment by Ar+ beam perpendicular to the film surface at ion/atom arrival ratio of 0.18, the prepared films exhibited weak (111) and (200) mixed orientations. When the direction of Ar+ beam was off-normal direction of the film surface, Ag films showed highly preferred (111) orientation. Monte Carlo method was used to calculate the sputtering yields of Ar+ ions at various incident and azimuth angles. The effects of channeling and surface free energy on the crystallographic orientation of Ag films were discussed.  相似文献   

6.
颜超  段军红  何兴道 《物理学报》2011,60(8):88301-088301
采用嵌入原子方法的原子间相互作用势,通过分子动力学模拟详细研究了以不同角度入射的低能Ni原子与Pt (111)基体表面相互作用过程中的低能溅射行为.结果表明:随着入射角度从0°增加到80°,溅射产额Ys和入射原子钉扎系数S的变化均可以根据入射角θ近似地分为以下三个区域:当θ ≤ 20°时,Ys和S几乎保持不变,其值与垂直入射时接近,溅射原子的发射角分布和能量分布也与垂直入射时的情 关键词: 分子动力学模拟 入射角 低能溅射  相似文献   

7.
用卢瑟福背散射技术,测定了NiPd(48.2wt%Pd)合金在不同温度时的溅射原子角分布,从而确定了Ni和Pd原子的部分产额随样品温度的变化关系。结果发现:Ni和Pd的部分溅射产额在居里温度附近均有较大变化,而且Pd的产额变化幅度比Ni的变化幅度大;Ni是择尤溅射元素,但是在磁相转变过程中,其择尤溅射程度却随样品温度的升高而减小。经讨论后指出,上述现象可能是由于在磁相转变过程中原子表面结合能减小和离子轰击引起的表面偏析共同引起的。 关键词:  相似文献   

8.
低能Pt原子与Pt(111)表面相互作用的分子动力学模拟   总被引:4,自引:0,他引:4       下载免费PDF全文
张超  吕海峰  张庆瑜 《物理学报》2002,51(10):2329-2334
利用分子动力学模拟方法详细研究了低能Pt原子与Pt(111)表面的相互作用所导致的表面吸附原子、溅射原子、表面空位的产生及分布规律,给出了表面吸附原子产额、溅射原子产额和表面空位产额随入射Pt原子能量的变化关系.模拟结果显示:溅射产额、表面吸附原子产额和表面空位产额随入射原子的能量的增加而增加,溅射原子、表面吸附原子的分布花样呈3度旋转对称性质;当入射粒子能量高于溅射阈值时,表面吸附原子主要是基体最表面原子的贡献,入射粒子直接成为表面吸附原子的概率很小.其主要原因是:当入射粒子能量高于溅射能量阈值时,入射 关键词: 分子动力学 低能粒子 表面原子产额 空位缺陷 溅射  相似文献   

9.
建立了包括质量效应、键合效应和轰击诱发吉布斯偏析效应的蒙特卡罗模拟程序;并对轰击诱发吉布斯偏析效应的两大特征(表面成分梯度特征和表面成分梯度的中间性特征)进行了研究.模拟解析了为何在被轰击合金表面形成了一个偏析元素的成分梯度;为何被轰击合金表面的成分梯度、溅射角分布和溅射产额具有中间性特征. In 1982, phenomena of bombardment induced Gibssian segregation(BIGS) during alloy sputtering were found at low temperature. By using Monte Carlo(MC) simulation programs including mass effect, surface binding energy effect and bombardment induced Gibssian segregation effect, we especially study two important characters of BIGS (one is the character of the surface composition gradient of BIGS, and another is the intermediate character of the surface composition gradient of BIGS). The MC simulations give...  相似文献   

10.
Surface defects created on Ge(001) exposed to low energy Xe ions are characterized by in situ scanning tunneling microscopy (STM). The temperature of the sample during ion bombardment is 165 C and ion energies range from 20 to 240 eV. The ion collisions create defects (vacancies and adatoms) which nucleate and form vacancy and adatom islands. For fixed total vacancy creation, the vacancy island number density increases with increasing ion energy: the vacancy island number density is 1.6 × 10−20 cm−2 for 40 eV ion bombardment and increases to 4.4 × 10−20 cm−2 for 240 eV ion bombardment. The increased nucleation rate for vacancies is attributed to clustering of defects. The sputtering yield of Ge(001) is also measured by STM. The sputtering yield for 20 eV ions is approximately 10−3 per ion but the net yield for surface defects (sum of adatoms and vacancies) is an order of magnitude higher, 10−2, due to adatom-vacancy pair creation.  相似文献   

11.
NiPd disordered crystal sputtering properties are studied via molecular dynamics simulation taking into account the segregation of upper layers. Computation is performed for a polycrystal and the (001), (110), and (111) faces of a single crystal under conditions of bombardment by argon ions with energies of 0.1 to 5 keV for normal and oblique incidence of ions. The energy and angular dependences of the sputtering process, as well as the spatial distribution of emitted particles, are analyzed.  相似文献   

12.
郭佳敏  叶超  王响英  杨培芳  张苏 《中国物理 B》2017,26(6):65207-065207
The effect of driving frequency on the structure of silicon grown on Ag(111) film is investigated, which was prepared by using the very-high-frequency(VHF)(40.68 MHz and 60 MHz) magnetron sputtering. The energy and flux density of the ions impinging on the substrate are also analyzed. It is found that for the 60-MHz VHF magnetron sputtering, the surface of silicon on Ag(111) film exhibits a small cone structure, similar to that of Ag(111) film substrate, indicating a better microstructure continuity. However, for the 40.68-MHz VHF magnetron sputtering, the surface of silicon on Ag(111) film shows a hybrid structure of hollowed-cones and hollowed-particles, which is completely different from that of Ag(111)film. The change of silicon structure is closely related to the differences in the ion energy and flux density controlled by the driving frequency of sputtering.  相似文献   

13.
Pt(111)表面低能溅射现象的分子动力学模拟   总被引:1,自引:0,他引:1       下载免费PDF全文
颜超  吕海峰  张超  张庆瑜 《物理学报》2006,55(3):1351-1357
利用嵌入原子方法的原子间相互作用势,通过分子动力学模拟,详细研究了贵金属原子在Pt (111)表面的低能溅射现象.模拟结果显示:对于垂直入射情况,入射原子的质量对Pt (11 1)表面的溅射阈值影响不大.当入射原子的能量小于溅射阈值时,入射原子基本以沉积为主 ;当入射原子的能量大于溅射阈值时,溅射产额随入射原子能量的增加而线性增大;当入射 原子能量达到200 eV时,各种入射原子的溅射产额都达到或接近1,此时入射原子主要起溅 射作用.溅射原子发射的角分布概率和溅射花样与高能溅射相类似.研究表明:与基于二体碰 撞近似的线性级联溅射理论不同,当入射原子能量大于溅射阈值时,低能入射原子的溅射产 额正比于入射原子的约化能量和入射原子与基体原子的质量比.通过对低能入射原子的钉扎 能力分析,提出了支配低能溅射的入射原子反射物理机理. 关键词: 分子动力学模拟、低能溅射  相似文献   

14.
It was observed clearly that the sputter damage due to Ar+ ion bombardment on metal single crystalline surfaces is extremely low and the local surface atomic structure is preserved, which is totally different from semiconductor single crystalline surfaces. Medium energy ion scattering spectroscopy (MEIS) shows that there is little irradiation damage on the metal single crystalline surfaces such as Pt(111), Pt(100), and Cu(111), in contrast to the semiconductor Si(100) surfaces, for the ion energy of 3–7 keV even above 1016–1017 ions/cm2 ion doses at room temperature. However, low energy electron diffraction (LEED) spots became blurred after bombardment. Transmission Electron Microscopy (TEM) studies of a Pt polycrystalline thin film showed formation of dislocations after sputtering. Complementary MEIS, LEED and TEM data show that on sputtered single-crystal metal surfaces, metal atoms recrystallize at room temperature after each ion impact. After repeated ion impacts, local defects accumulate to degrade long range orders.  相似文献   

15.
It has been found that, in contrast to the commonly accepted opinion, simultaneous irradiation by 15-keV Ar+ ions and 2.5-keV electrons at temperatures above 0.5T m (T m is the melting temperature) induces much larger sputtering of metallic copper, nickel, and steel than irradiation only by Ar+ ions. The effect increases with the temperature. At T = 0.7T m, the sputtering coefficients in the case of ion-electron irradiation are more than twice as large as the sputtering coefficients in the case of irradiation by Ar+ ions. The experiments on the sublimation of copper show that the sublimation rate in the case of the heating of a sample by an electron beam is higher than that in the case of heating in an electric vacuum oven. The revealed effects are explained by the electron-induced excitation of adatoms (atoms stuck over the surface, which appear owing to ion bombardment). Excited adatoms have a smaller binding energy with the surface and are sputtered more easily.  相似文献   

16.
We investigate oxidation and oxide growth on single-crystal copper surfaces using reactive molecular dynamics simulation. The kinetics of surface oxide growth are strongly correlated with the microstructure of the metal substrates. Simulating oxide layer growth along the (100), (110), and (111) orientations of crystalline copper, oxidation characteristics are investigated at temperatures of 300?K and 600?K. The oxidation kinetics are found to strongly depend on the surface orientation, ambient temperature, and surface defects. The effect of surface morphology on oxidation characteristics is analyzed by comparing oxygen adsorption on various sites and the structure factor. The surface oxide formed on (100) retains the initial crystal structure in the 300–600?K range. The (100) surface shows the highest oxidation rate at both temperature conditions but saturates, facilitating oxygen adsorption on hollow sites. The oxidation kinetics of the (100) orientation are found to be not significantly affected by surface defects. (110) shows modest oxidation at 300?K but the highest oxidation is observed at 600?K. By surface disorder and reconstruction, the oxide layer is produced continuously. The (111) surface is sensitive to ambient temperature and surface defects, showing that surface reconstruction is a key element for further oxidation. The charge distribution of oxidized Cu atoms indicates multiple groups of stoichiometric oxides, while the fraction of CuO-like characteristics increases significantly on the (110) and (111) orientations at higher temperature (600?K). The energetics and mechanisms of oxidation on Cu metal substrates at the nanoscale are discussed in detail, and comparisons with available experimental and other theoretical studies are presented wherever possible.  相似文献   

17.
报道了用FeCl+56Fe+35Cl+轰击Ag靶的溅射原子角分布和产额测量结果.发现FeCl+轰击Ag的原子溅射产额与56Fe+35Cl+轰击的溅射产额之和相比有大的增强.这种溅射产额增强现象可以用热峰蒸发(thermal spike-evaporation)加上表面拓扑效应(surface topography effect)的理论模型进行解释.  相似文献   

18.
Cu掺杂氧化锌薄膜的发光特性研究   总被引:15,自引:0,他引:15       下载免费PDF全文
通过射频反应溅射法在Si(111)衬底上制备了不同Cu掺杂量的ZnO薄膜.室温下测量了样品的光致发光(PL)谱,所有样品的PL谱中均观察到435?nm左右的蓝光发光带,该发光带的强度与Cu掺杂量和溅射功率有关.当溅射功率为150?W,Cu掺杂量为2.5%时,ZnO薄膜的PL谱中出现了较强的蓝光双峰,而溅射功率为100?W,Cu掺杂量为1.5%时,出现了位于437nm(2.84eV)处较强的蓝光峰,后者的取向性较好.还研究了掺杂量和溅射功率对发光特性的影响,并对样品的蓝光发光机制进行了探讨. 关键词: ZnO薄膜 Cu掺杂 光致发光谱 射频反应共溅射  相似文献   

19.
Effects of ion-induced surface roughness on sputtering of amorphous carbon under ion bombardment are studied by means of binary-collision computer simulation in a wide range of incidence angles. Most simulations refer to 1–10?keV Ar ion bombardment, and sinusoidal ripple morphology is assumed. It is shown that surface roughness is a key factor to achieve quantitative agreement with experiment. The simulation results are compared with the analytical estimates of the yield from sine-shaped and ridged surfaces based on continuum models of ion sputtering. Some deviations between the results are discussed.  相似文献   

20.
The normal bombardment of bulk polyethylene and pentacene crystals with 100-eV Ar ions has been investigated by molecular dynamics simulation using the many-body potential for covalent bonds. Polyethylene targets with and without chain folds on the surface have been used. The sputtering yield and changes in the atomic structure of targets are discussed.  相似文献   

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