Luminescence due to exciton-exciton collision in GaAs

Emission spectra of high-purity GaAs have been studied at 4.2 K under N₂ laser excitation. The slope of the low-energy tail of the main band has been found to fit well with the theoretical prediction for radiative Auger recombination of free excitons. Measurements under electric field support the dominant contribution of this process in the luminescence of highly excited GaAs.     

Optical pulling force on nanoparticle clusters with gain due to Fano-like resonance

We demonstrate that, in a simple linearly-polarized plane wave, the optical pulling forces on nanoparticle clusters with gain can be induced by the Fano-like resonance. The numerical results based on the full-wave calculation show that the optical pulling forces can be attributed to the recoil forces for the nanoparticle clusters composed of dipolar nanoparticles with three different configurations. Interestingly, the recoil forces giving rise to optical pulling forces are exactly dominated by the coupling term between the electric and magnetic dipoles excited in the nanoparticle clusters, while other higher-order terms have a negligible contribution. In addition, the optical pulling force can be tailored by modulating the Fano-like resonance via either the particle size or the gain magnitude, offering an alternative freedom degree for optical manipulations of particle clusters.     

掺碲硒化镓晶体的光学性能

采用水平区熔法生长了碲（Te）掺杂浓度（质量百分比）分别为0.05%,0.1%,0.5%,1%,2%的硒化镓（GaSe）晶体,并分别对掺杂浓度为0.01%,0.07%,0.38%,0.67%,2.07%的GaSe∶Te晶体的光学性能进行了表征。首次研究了GaSe∶Te晶体中刚性层声子模式的转换。吸收光谱测试结果表明：当Te掺杂浓度小于0.38%时,振动中心位于0.59 THz附近的E＇（2）刚性模式吸收峰强度可达最大值,这一过程与GaSe∶Te晶体光学性能的提高密切相关。但Te掺杂浓度的进一步提高会导致E＇（2）刚性模式吸收峰强度逐渐减弱,当Te掺杂浓度为1%时,E＇（2）刚性模式吸收峰基本消失。这两个过程与GaSe∶Te晶体光学质量的下降密切相关。因此,E＇（2）刚性模式吸收强度达到最高时对应的掺杂浓度即是GaSe∶Te晶体中Te的最佳掺杂浓度,光整流产生太赫兹过程证实了此结论的正确性。     

掺碲硒化镓晶体的光学性能(英文)

采用水平区熔法生长了碲(Te)掺杂浓度(质量百分比)分别为0.05%,0.1%,0.5%,1%,2%的硒化镓(GaSe)晶体,并分别对掺杂浓度为0.01%,0.07%,0.38%,0.67%,2.07%的GaSe∶Te晶体的光学性能进行了表征。首次研究了GaSe∶Te晶体中刚性层声子模式的转换。吸收光谱测试结果表明:当Te掺杂浓度小于0.38%时,振动中心位于0.59 THz附近的E'(2)刚性模式吸收峰强度可达最大值,这一过程与GaSe∶Te晶体光学性能的提高密切相关。但Te掺杂浓度的进一步提高会导致E'(2)刚性模式吸收峰强度逐渐减弱,当Te掺杂浓度为1%时,E'(2)刚性模式吸收峰基本消失。这两个过程与GaSe∶Te晶体光学质量的下降密切相关。因此,E'(2)刚性模式吸收强度达到最高时对应的掺杂浓度即是GaSe∶Te晶体中Te的最佳掺杂浓度,光整流产生太赫兹过程证实了此结论的正确性。     

Nonlinear Optical Absorption in GaSe upon Laser Excitation

Optics and Spectroscopy - The nonlinear absorption in GaSe crystals at high optical excitation levels is experimentally studied. A Nd:YAG laser (first and second harmonics, 1064 and 532 nm) and a...     

Optical properties of Tm-doped GaSe single crystals

Optical properties of Tm-doped GaSe single crystals were investigated by measurements of optical absorption and photoluminescence. The single crystals were grown by the Bridgman technique. The X-ray diffraction analysis revealed that the single crystals were in the ε-type GaSe phase. The optical absorption spectra showed a sharp absorption peak at 582 nm near the band edge, which is due to direct free exciton. The temperature dependence of the energy of the exciton absorption peak was well fitted by the Varshni relation. In the photoluminescence spectrum at 10 K, we observed a very weak emission peak at 586 nm, a relatively strong emission peak centered at 613 nm, and several sharp and narrow emission peaks in the 790-840 nm region. The two emission peaks at 586 and 613 nm were associated with intrinsic emission lines due to direct free exciton and indirect bound exciton. The emission peaks in the 790-840 nm region, which were related to extrinsic emission, were assigned as due to the ³F₄→³H₆ transition of Tm³⁺ ions with a low symmetry of D₃ in the host lattice.     

Optical properties of GaSe: Mn single crystals

To identify the manganese related defect levels in GaSe, GaSe:Mn single crystals were grown with various Mn dopant levels using the Bridgman technique and the photoconductivity and photoluminescence properties were investigated. Peaks introduced by the manganese related defects were observed at 1.916 and 1.724 eV in the photoconductivity spectra and at 1.804 eV in the photoluminescence spectra at 80 K. These results allow the calculation of the energies of the A₁ and A₂ centers at 0.348 and 0.156 eV, respectively, above the valence band and a donor level at 0.112 eV below the conduction band. Also, we find that the A₁ and A₂ centers are pinned within the conduction band from measurements of the temperature dependence of the photoconductivity spectra.     

Optical absorption edge of a new GaSe polytype

The optical energy gap of the δ modification of GaSe is reported. The energy shift of the exciton in this polytype is explained in terms of interlayer separation by comparison with the ? structure under high pressure.     

Optical detectors on GaSe and InSe layered crystals

Fast uncooled GaSe and InSe detectors that can record ultrashort (10^?12–10^?9 s) laser pulses in the visual and near-IR ranges are developed. The quick response of the detectors is due to rapid recombination channels with a high capture cross section present in the crystals.     

Optical nonlinearities in GaSe and InSe crystals upon laser excitation

The nonlinear absorption of light and its temporal evolution in the vicinity of exciton resonance in layered GaSe and InSe crystals under high optical excitation have been experimentally investigated. The decisive factor for the observed temporal dependence of the absorption coefficient and its dependence on the excitation intensity is screening excitons by nonequilibrium-carrier plasma. It is shown that the increase in the transmittance in the absorption-band edge in GaSe with a simultaneous blue shift of the band edge is caused by filling the energy bands under high optical excitation.     

Effective nonlinear GaSe crystal. Optical properties and applications

We present an overview of the current state of the literature and research performed by the authors of the present paper on the experimental and theoretical results on the structural-, optical-, nonlinear optical (NLO)-properties (including two-photon absorption (TPA) and the terahertz (THz) range of spectra) and practical applications of a highly anisotropic Gallium Selenide (GaSe) semiconductor with emphasis on the ?-GaSe. Physical properties of ?-GaSe are important to researchers and designers developing different devices by using this material. This crystal possesses an outstanding NLO properties: high optical birefringence Δn ～ 0.3 at 700 nm; high transparency range (0.7?18.0 μm) with low absorption coefficient (α ≤ 0.3 cm^?1); very high nonlinear susceptibility χ⁽²⁾ (d ₂₂ ≈ 86 ± 17 pm/V, corresponding to (2.0 ± 0.4) × 10^?7 esu) that is used for phase matched second harmonic generation (SHG) in a wide transparency range; high power threshold for optical damage; possibility to perform optical frequency conversion under phase-matching conditions in the near- to mid-IR and THz range of spectra, etc. The domain structure of crystal in connection with the NLO properties is discussed as studied by confocal Raman microscopy experiments. Perspectives for future research of GaSe are considered in the present article, which does not pretend to be one reflecting all existing papers on GaSe crystal and discussed subjects.     

Optical spin orientation of excitons in GaSe under longitudinal magnetic field

The degree of circular polarization of the free-exciton luminescence line has been measured in GaSe excited by circularly polarized light at 4.2 K under longitudinal magnetic field. The result shows that the spin relaxation time of exciton is field-dependent but the spin memory before reaching the exciton ground state is almost unaffected by the applied longitudinal magnetic field.     

Optical self-energy in graphene due to correlations

In highly correlated systems one can define an optical self-energy in analogy to its quasiparticle (QP) self-energy counterpart. This quantity provides useful information on the nature of the excitations involved in inelastic scattering processes. Here we calculate the self-energy of the intraband optical transitions in graphene originating in the electron-electron interaction (EEI) as well as electron-phonon interaction (EPI). Although optics involves an average over all momenta (k) of the charge carriers, the structure in the optical self-energy is nevertheless found to mirror mainly that of the corresponding quasiparticles for k equal to or near the Fermi momentum k(F). Consequently, plasmaronic structures which are associated with momenta near the Dirac point at k = 0 are not important in the intraband optical response. While the structure of the electron-phonon interaction (EPI) reflects the sharp peaks of the phonon density of states, the excitation spectrum associated with the electron-electron interaction is in comparison structureless and flat and extends over an energy range which scales linearly with the value of the chemical potential. We introduce a method whereby detailed quantitative information on such excitation spectra can be extracted from optical data. Modulations seen on the edge of the interband optical conductivity as it rises towards its universal background value are traced to structure in the quasiparticle self-energies around k(F) of the lower Dirac cone associated with the occupied states.     

Optical bistability due to biexcitons in CuCl

Biexciton optical bistability is observed for the first time using CuCl as a nonlinear medium in a Fabry-Perot. The effect is obtained with a high intensity pulsed dye laser which excites the sample and modifies its refractive index near half the biexciton energy. The switching times of the device are shown to be inferior to 500 ps. The bistability is observed at pumped liquid helium and at liquid nitrogen temperatures.     

Optical excitations due to deuterium in niobium

The optical vibration of deuterium in the α′-phase of Nb D_0.6 has been measured by inelastic scattering of neutrons with a triple axis spectrometer at a hot source. The optical branches show no dependence on the phonon-wave vector and the polarization. The two observed branches fulfil the relation ω₂ = 1.41ω₁.     

Optical Spectra of GaSe and GaS Crystals of Different Thicknesses

Physics of the Solid State - The transmission spectra of GaSe and GaS crystals of different thicknesses prepared by mechanical stratification of bulk crystals have been investigated. The...     

Optical and defect properties of S-doped and Al-doped GaSe crystals

S-doped and Al-doped GaSe crystals are promising materials for their applications in nonlinear frequency conversion devices. The optical and defect properties of pure, S-doped, and Al-doped GaSe crystals were studied by using photoluminescence(PL) and Fourier transform infrared spectroscopy(FT-IR). The micro-topography of(0001) face of these samples was observed by using scanning electron microscope(SEM) to investigate the influence of the doped defects on the intralayer and interlayer chemical bondings. The doped S or Al atoms form the S_(Se)~0 or Al_(Ga)~(+1) substitutional defects in the layer GaSe structure, and the positive center of Al_(Ga)~(+1) could induce defect complexes. The incorporations of S and Al atoms can change the optical and mechanical properties of the GaSe crystal by influencing the chemical bonding of the layer structure. The study results may provide guidance for the crystal growth and further applications of S-doped and Al-doped GaSe crystals.     

Optical gain measurements in doped alkali-halides

In order to verify the possibility of obtaining laser action in doped alkali-halides crystals, optical amplification measurements have been performed by the amplified spontaneous emission (ASE) technique. Results obtained in CsI : In(Tl) crystal are reported and discussed.