The Hd-center interaction with a Rb+ ion during irradiation and thermal annealing in kBr

The role of Rb⁺ ions on defect formation in KBr has been studied. The impurity suppresses colorability due to X-raying at 6 K, but does not result in the formation of any centers characteristic to Rb⁺ ions at this temperature. A new optical absorption band peaked at 3.19 eV is produced only by thermal annealing of irradiated KBr:Rb. This band is annealed in parallel to the annealing of the F band in a stage at 55 K, obeying second-order rate equation with an activation energy of 0.102 eV. This band is ascribed to the H_A(Rb⁺)-center. Calculation is made on the elastic interaction energy between the H-center and a Rb⁺ ion, to show that the interaction along 〈110〉 is repulsive, whereas that along 〈001〉 is attractive. Based on this result of calculation, the structure and the formation mechanism of the H_A(Rb⁺) center, and origin of suppression of colorability at 6 K are discussed. The difference in the interaction of the interstitial atom with Rb⁺ during its dynamical motion and thermal motion is emphasized.     

Spectroscopic characteristics of anionic centers in α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> crystals bombarded by Cu<Superscript>+</Superscript> and Ti<Superscript>+</Superscript> ions

We have studied the effect of bombardment by Cu⁺ and Ti⁺ ions with energy 30 keV on the optical absorption and luminescence of F centers in oxygen-deficient aluminum oxide. We have shown that in the induced optical absorption spectra there are six components of gaussian shape, which can be assigned to absorption bands of F⁺, F², and F₂⁺ centers. We have established that bombardment of the samples by ion beams has a weak effect on the thermoluminescence parameters in the 3.0 eV and 2.4 eV bands, while in the 3.8 eV luminescence band for F⁺ centers, the thermoluminescent response increases considerably. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 422–424, May–June, 2008.     

Luminescence and radiation-induced color centers in anion-defective alumina crystals after high-dose irradiation

A method of UV spectroscopy was used to measure photoluminescence (PL) spectra and photoluminescence excitation (PLE) spectra in anion-defective alumina crystals exposed to high doses of gamma-radiation. An additional emission band in the range of 1.6–2.75 eV appears in the exposed crystals. Aggregate F₂-type centers in different charge states are responsible for this band. It was found that growing intensity of PL aggregate centers occurs at doses corresponding to saturation of dose response and is accompanied by a sharp drop in the intensity of F⁺-band in the PL spectrum resulting from combination of F⁺-centers into aggregates. Uncharged F₂-centers are formed when electrons are trapped by F₂⁺ and F₂²⁺-centers. The main role of F⁺-centers in radiation-induced transformations of color centers under high-dose irradiation of anion-defective alumina crystals was indicated.     

Defect evolution and photoluminescence in anion-defective alumina single crystals exposed to high doses of gamma-rays

A method of luminescent UV and VUV spectroscopy was used to study the evolution of color centers in anion-defective alumina single crystals exposed to high doses of gamma-radiation. A sharp drop in the intensity of the emission bands and, therefore, the concentration of F⁺ and F-centers associated with the formation of aggregate F₂-type centers was found. The aggregate centers create an additional emission band in the range of (1.8–2.8) eV. When the crystals are exposed to middle and high doses, the photoluminescence (PL) intensity is the highest in the emission band of F₂²⁺-centers, which indicates a high concentration of the aggregates from singly charged oxygen vacancies (of F⁺-centers). When PL of the crystals exposed to high doses is excited with synchrotron radiation of the VUV range, a wide emission band in the red and near infrared (NIR) regions is registered. The centers related presumably to impurity defects, their aggregates and clusters consisting of several oxygen vacancies are responsible for this emission band.     

Electron-stimulated desorption of positive ions from hexagonal α-SiC

Electron-stimulated desorption (ESD) of positive ions (H⁺, O⁺, ⁺OH, F⁺ and Cl⁺) from the Si- and C-terminated surfaces of hexagonal α-SiC has been observed for electron energies in the 5–105 eV range. Comparison of these results with those for the ESD of the same ions from the surfaces of Si and condensed hydrocarbons leads to a model for the H⁺, ⁺OH, F⁺ and Cl⁺ threshold desorption process based on transitions from deep valence Si and C “s-like” levels to states in the conduction band, followed by Auger decay to form a localized multiple valence-hole configuration. O⁺ desorption, on the other hand, is initiated by O 2s ionization. Evidence is found for a strong dependence of the F⁺ threshold on the local chemical bonding. The results indicate that the thresholds for ESD of these ions from SiC are determined more by the electronic excitation of the substrate than by direct excitation of the adsorbate bond.     

Defect parameters for strontium fluoride

The ionic conductivity of dilute Sr₁?xYb_xF₂+x solid solutions has been studied as a function of temperature. For the migration enthalpy of fluoride interstitials the value 0.946 eV is obtained, and the value 0.56 eV for the dissociation enthalpy of neutral associates (Yb_SrF_i)^x. The latter value is concordant with the theoretical binding energy for this type of associate. A re-analysis of the conductivity data for SrF₂ leads to the value 2.70 eV for intrinsic defect formation, contrary to reported values which range from 2.2 to 2.3 eV.     

Radio and thermoluminescence studies in CsI doped with F centers

Radioluminescence, thermoluminescence and u.v. excitation measurements in CsI additively colored crystals show a new luminescent component located at 2.5 eV. This is attributed to the radiative recombination of V_k centers with F centers. Another new component at 2.72 eV is observed only under u.v. excitation of 5.14 eV. This is related to the radiative recombination of localised excitons at F⁺ center sites (α band).     

Ab initio calculations of electronic structures of SrMoO4 crystals containing F and F color centers

The electronic structures of SrMoO₄ crystals containing F and F⁺ color centers with the lattice structure optimized are studied within the framework of the fully relativistic self-consistent Dirac–Slater theory, using a numerically discrete variational (DV-Xα) method. From the calculation, it is concluded that F and F⁺ color centers have donor energy level in the forbidden band. The electronic transition energies from the donor level to the bottom of the conduction band are 1.855 eV and 2.161 eV, respectively, which correspond to the 670 nm and 575 nm absorption bands. It is predicted that the 670 nm and 575 nm absorption bands originate from the F and F⁺ centers in SrMoO₄ crystals.     

First-principles study on electronic structures of BaWO4 crystals containing F-type color centers

The electronic structures of BaWO₄ crystals containing F-type color centers are studied within the framework of the fully relativistic self-consistent Dirac-Slater theory, using a numerically discrete variational (DV-Xα) method. It is concluded that F and F⁺ color centers have donor energy level in the forbidden band. The optical transition energies are 2.449 and 3.101 eV, which correspond to the 507 and 400 nm absorption bands, respectively. It is predicted that 400-550 nm absorption bands originate from the F and F⁺ color centers in BaWO₄ crystals.     

Type I FA (Rb, Cs) and II FA (Li, Na) tunable laser activities and donor-acceptor properties of O and O at KCl (001) surface: first principle calculations

Type I F_A (Rb⁺, Cs⁺) and II F_A (Li⁺, Na⁺) tunable laser activities, adsorptivity and donor-acceptor properties of O and O⁻ adsorbates at the flat surface of KCl crystal were investigated using an embedded cluster model and ab initio methods of molecular electronic structure calculations. Ion clusters were embedded in a simulated Coulomb field that closely approximates the Madelung field of the host surface, and the nearest neighbor ions to the defect site were allowed to relax to equilibrium. Based on the calculated Stokes shifted optical transition bands, F_A tunable laser activities were found to be inversely proportional to the size of the dopant cation (Li⁺, Na⁺, Rb⁺, Cs⁺) relative to the host cation (K⁺). This relation was explained in terms of the axial perturbation of the impurity cation. The probability of orientational bleaching attributed to the RES saddle point ion configuration along the 〈110〉 axis was found to be inversely proportional to the size of the dopant cation, with activation energy barriers of ca. 0.44-3.34 eV. Surface relaxation energies of type II F_A centers were more important than those of type I F_A centers. In terms of defect formation energies, the products of type II F_A center imperfection were more stable than those of type I F_A. The difference between F or F_A band energies and exciton bands depended almost exclusively on the size of the positive ion species. As far as the adsorptivity of O and O⁻ is concerned, the results confirm that surface imperfection enhances the adsorption energies by ca. 4.38-16.37 eV. O and O⁻ penetrate through the defect-containing surface. The energy gap between the adsorbate and the defect containing surface and the donor-acceptor property of adsorbate play the dominant role in the course of adsorbate substrate interactions and the results were explained in terms of electrostatic potential curves and Mulliken population analysis.     

Proton-induced F-centers in LiF and MgF2

The growth of F-centers in LiF irradiated at room temperature with 40- and 85-MeV protons and with ⁹⁰Sr electrons was found to be proportional to the square root of the absorbed energy over the range 0.5 to 2.3 Mrad which corresponds to an F-center density range of 1 × 10¹⁶ to 1.5 × 10¹⁷ per cm³. The production efficiency was 5 × 10³eV per F-center at an absorbed energy of 2.3 Mrad. The density of F-centers produced in MgF₂ by 40- and 85-MeV protons was measured over an absorbed energy range of 0.2 to 29 Mrad which corresponds to a maximum F-center density of 2 × 10¹⁶ per cm³. The production efficiency for MgF₂ was 4 × 10⁵eV per F-center at an absorbed energy of 16 Mrad.     

F-Zentren und Kolloide in der amorphen,hexagonalen und kubischen Phase von LiJ

By simultaneous evaporation of LiI and Li onto a cooled substrate F centers can be produced in the hexagonal (78 K<T _K <200 K) and amorphous (T _K <78 K) phase of one and the same salt. In both modifications there exist two types of centers F and F^*. The F^* center differs from the cubic F center (T _d -symmetry) by a nearby Frenkel defect. In hexagonal films the normal F band peaks at 2.58 eV, whereas the transitions of the F^* center appear at 2.92 and 2.58 eV too. Polarized irradiation at 20 K causes a dichroic behaviour of the F^* centers. Both types of centers can be transformed into one another photochemically. In the amorphous phase all transitions are shifted to lower energies by about 0.1 eV. After the phase change amorphous→hexagonal the absorption bands shift back by the same amount of energy. AboveT _K =230 K the excess metal forms colloids. The absorption bands are due to colloidal centers embedded in the crystalline material (2.25 eV) and films adsorbed to the crystallites (3.1 eV), respectively. By annealing a particle growth can be observed. After electrolytic colouration cubic single crystals of LiI exhibit an absorption band peaking at 2.36 eV. However, it is not yet sure, if this band is allowed to be ascribed to F centers.     

Ultraviolet photoemission study of LiF

Photoemission from evaporated films of LiF were measured at photon energies of 10-27 eV. The photoelectron spectra exhibit features that can be identified as density-of-states structures in the valence and conduction bands of LiF. Regions of high density of states can be seen at ca. 3.3 and 7.8 eV above the vacuum level. The valence-band spectrum shows a doublet structure similar to the calculated density of states for the F^?2p band of LiF. The base width of this structure is found to be 4.6 ± 0.3 eV. The photoelectron spectra for photon energies > 15 eV indicate that the highest occupied states of the F^?2p band are located at 11.8 ± 0.3 eV below the vacuum level. The photoelectron spectra in the exciton region, however, show photo-emission from higher occupied states.     

CaWO4晶体中F型色心电子结构的研究

运用相对论的密度泛函离散变分法(DV-Xα)研究了CaWO₄晶体中F型色心的电子结构. 计算结果表明，F和F⁺心在禁带中引入了新的施主能级；分析了晶体内可能存在的光学跃迁模式，并通过过渡态的方法计算了F，F⁺心跃迁到导带底的能量分别为1.92eV和2.42eV. 因此，从理论上推断了F和F⁺心在CaWO₄晶体中可能引起650nm和515nm的吸收，由此说明CaWO₄晶体中650nm和515nm吸收带起源于晶体中的F和F⁺心. 关键词： 4晶体')" href="#">CaWO₄晶体 +心')" href="#">F和F⁺心 DV-Xα     

Luminescence of Tl<Superscript>+</Superscript> ions in a KZnF<Subscript>3</Subscript> crystal

The luminescence spectra of a KZnF₃: Tl⁺ crystal are investigated in the energy range from 4.75 to 5.9 eV at temperatures of 10–300 K upon excitation into the A absorption band (5.7–6.3 eV). At T=300 K, the luminescence spectra exhibit an intense band with a maximum at 5.45 eV, which is attributed to single Tl⁺ ions substituted for K⁺ ions. The 5.723-eV intense narrow band observed at T<20 K is assigned to the ³Γ_1u-¹Γ_1g zero-phonon transition, which is weakly allowed by the hyperfine interaction. The luminescence decay is studied as a function of temperature. The main characteristics of the luminescence spectra are adequately described in terms of the semiclassical theory based on the Franck-Condon principle and the Jahn-Teller effect for an excited sp configuration of the Tl⁺ ion with the use of the parameters obtained earlier from analyzing the absorption spectra of the system under investigation.     

First-principles study on electronic states of SrWO4 crystals containing F-type color centers

The electronic structures of the SrWO₄ crystals containing F-type color centers are studied within the framework of the fully relativistic self-consistent Dirac–Slater theory using a numerically discrete variational (DV-X^α) method. The calculations indicate that either F or F⁺ center has donor energy level within the forbidden band. The electronic transition energies from the two donor levels to the bottom of the conduction band are 1.82 eV and 2.28 eV corresponding to the 685 nm and 545 nm absorption bands, respectively. It is, therefore, concluded that the 545–685 nm absorption bands are originated from the F and F⁺ center in SrWO₄ crystal respectively.     

Electronic structure of F,-center in MgO

The embedded-cluster numerical variational method has been developed to calculate the electronic structure of perfect MgO, F and F⁺-centers in MgO. The energy band, bulk density of states has been calculated by cluster Mg₁₄O₁₃, Mg₁₄O₁₂F⁺ and Mg₁₄O₁₂F. The calculated absorption energy for F⁺ and F centers is in good agreement with experimental data. In our calculated defect energy levels, that the first excited state of F⁺-center is at CB-3.46 eV, indicates the necessity of a large photoelectron yielding energy. We also calculate the radius of color center electron, and plot the map of charge-density distribution of valence electrons in which the structure of the color center is shown directly. Received 22 May 1998     

Dislocation spectroscopy of crystals

A new method of studying the energy characteristics of dislocations is proposed, which is based on the investigation of the interaction of moving dislocations with purposefully introduced electronic and hole centers. A study has been made of KCl, NaCl, KBr, LiF, and KI alkali halide crystals containing electronic F and hole V _K and Me ⁺⁺ (Cu⁺⁺, Ag⁺⁺, Tl⁺⁺, In⁺⁺) centers. Investigation of the temperature dependence of the dislocation interaction with the F centers permitted determination of the position of the dislocation-induced electronic band (DEB) in the band diagram of the crystal. In KCl, the DEB is separated by ≈2.2 eV from the conduction-band minimum. It is shown that dislocations transport holes from the centers lying below the dislocation-induced hole band (DHB) (X ⁺, In⁺⁺, Tl⁺⁺, V _K) to those above the DHB (the Cu⁺ and Ag⁺ centers). Such a process is temperature independent. The DHB position in the crystal band diagram has been determined; in KCl it is separated by ≈1.6 eV from the valence-band top. The effective radii of the dislocation interaction with the electronic F and hole X ⁺, V _K, and Tl⁺⁺ centers have been found. Fiz. Tverd. Tela (St. Petersburg) 41, 2139–2146 (December 1999)     

Temperature behavior of the 6.05-eV band in optical absorption spectra of oxygen-deficient corundum

The effect of temperature on the 6.05-eV absorption band in α-Al₂O₃ has been studied in the 80–515 K region. The data obtained are analyzed in terms of a one-coordinate model with strong electron-phonon coupling. This band is shown to be formed by two peaks at 5.91 and 6.22 eV (T=293 K) originating from absorption at the F ⁺ and F centers, respectively. An analysis of the experimental temperature dependences has allowed us to calculate the energies of effective phonons responsible for the broadening and shift of the peaks. The energies calculated agree with the data obtained in other studies and lie in the region of corundum acoustic-vibration frequencies. The Huang-Rhys factors have been evaluated for both centers and found to be close to the estimates made by other authors. The results are discussed in detail and compared with independent data on optical absorption and luminescence of anion centers in colored and irradiated α-Al₂O₃ single crystals.     

Ionic conductivity and point defects in pure and doped MnF2 and MgF2 single crystals

Conductivity, σ, of MnF₂ and MgF₂ single crystals, pure and doped (with Li⁺, Na⁺, Y³⁺, Gd³⁺), has been measured, from room temperature to 500°C. Further, some crystals were contaminated with O^2? as an additional impurity. These tetragonal (rutile structure) crystals both behave like typical ionic conductors. Of particular interest is the existence of a large anisotropy, σ being largest when measured parallel to the c-axis. Study of the conductivity isotherms and anisotropy as functions of impurity concentration allows identification of the conduction mechanism in terms of the migration of two mobile defects: the fiuorine-ion vacancy, V_F, and interstitial, F_i. A value of 1.44 eV was obtained for the enthalpy of formation of the intrinsic anion Frenkel defect, 0.80 eV for the migration enthalpy of a V_F and 0.88 eV for an F₁ in MnF₂ parallel to the c-axis. Similar values were obtained for MgF₂. This work shows that more information about point defects can be obtained from conductivity measurements in non-cubic cyrstals than in cubic ionic crystals, because of the additional information from conductivity anisotropy.