Multiphonon resonant Raman scattering in N‐doped ZnO

Multiphonon resonant Raman scattering in N‐doped ZnO films was studied, and an enhancement of the resonant Raman scattering process as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed at room temperature. The resonant Raman scattering intensity of the 1LO phonon in N‐doped ZnO appears three times as strong as that of undoped ZnO, which mainly arises from the defect‐induced Raman scattering caused by N‐doping. The nature of the 1LO phonon at 578 cm⁻¹ is interpreted as a quasimode with mixed A₁ and E₁ symmetry because of the defects formed in the ZnO lattice. In addition, the previously neglected impurity‐induced two‐LO‐phonon scattering process was clearly observed in N‐doped ZnO. Copyright © 2009 John Wiley & Sons, Ltd.     

Resonant Raman scattering from screened longitudinal optical phonons in EuTe

Forbidden resonant Raman scattering from screened longitudinal optical, LO, phonons has been observed in the back-reflection geometry from n-type EuTe at 2°K. The Raman shift increased with increasing excitation frequency but was always between the LO and TO phonon frequencies. This effect is explained in terms of a varying ‘effective’ carrier concentration as a function of laser penetration depth through the surface depletion layer in the situation of large phonon wave vector. Conduction band and lattice parameters have been calculated from infrared Reststrahlen and plasma edge measurements.     

InGaN薄膜的紫外共振喇曼散射

利用325nm紫外光激发,对不同组分的In_xGa_1-xN薄膜的喇曼散射谱进行了研究.在光子能量大于带隙的情况下,观察到显著增强的二阶A₁(LO)声子散射峰.二阶LO声子峰都从一阶LO声子的二倍处向高能方向移动,移动量随样品In组分的增加而增大,认为是带内Frhlich相互作用决定的多共振效应引起的.分析了一阶LO声子散射频率和峰型与In组分的关系.在喇曼谱中观察到样品存在相分离现象,并与X射线衍射的实验结果进行 关键词： xGa_1-xN合金')" href="#">In_xGa_1-xN合金 紫外共振喇曼散射 二阶声子 相分离     

Photoluminescence and multiphonon resonant Raman scattering in Ni-and Co-doped Zn1−x MnxTe crystals

Low-temperature photoluminescence, exciton reflection, and multiphonon resonant Raman scattering spectra of Ni-and Co-doped Zn_1−x Mn_xTe crystals were investigated. Intense emission occurs in a broad spectral region (1100–17 000 cm⁻¹) in the crystals containing Ni atoms. It is caused by intracenter transitions involving Mn²⁺ ions and transitions between the conduction band and a level of the doubly charged acceptor. The features of the exciton photoluminescence and multiphonon resonant Raman scattering involving longitudinal-optical (LO) phonons at various temperatures are investigated. The insignificant efficiency of the localization of excitons on potential fluctuations in the Zn_1−x Mn_xTe:Co crystals is established. A temperature-induced increase in the intensity of the 5LO multiphonon resonant Raman scattering line due to the approach of the conditions for resonance between this line and the ground exciton state is observed in these crystals. Fiz. Tverd. Tela (St. Petersburg) 40, 616–621 (April 1998)     

Photoluminescence and resonant Raman scattering in N-doped ZnO thin films

A combination of studies on photoluminescence and resonant Raman scattering in N-doped ZnO thin films were carried out at room temperature. In the photoluminescence spectra, a transformation of radiative recombination mechanism from free-exciton to donor-acceptor-pair transition was observed. An enhancement of resonant Raman scattering processes as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed in the Raman spectra. Also, the nature of the 1LO phonon underwent a transformation from a pure A₁(LO) mode to a quasimode with mixed A₁ and E₁ symmetry. The underlying mechanisms accounting for the influences of N doping on the optical properties of ZnO were related to the incorporation of extrinsic defects in the crystal lattice.     

Resonant raman scattering at the E1 energy gap of semiconductor crystals

We present a discussion of resonant Raman scattering by optical phonons at the E₁ energy gap of group IV and groups III–V compound semiconductor crystals (e.g., Ge and InSb). For allowed scattering by TO and LO phonons, the q-dependent “double resonant” two-band calculation of the Raman tensor may display destructive interference effects when the intermediate electron-hole pairs are uncorrelated. We also discuss the Franz-Keldysh mechanism of resonant electric field induced Raman scattering by LO phonons. The double resonance terms due to this mechanism will, for large electric fields, broaden and have its largest resonance enhancement at the energy gap.     

Surface enhanced Raman scattering of light by ZnO nanostructures

Raman scattering (including nonresonant, resonant, and surface enhanced scattering) of light by optical and surface phonons of ZnO nanocrystals and nanorods has been investigated. It has been found that the nonresonant and resonant Raman scattering spectra of the nanostructures exhibit typical vibrational modes, E ₂(high) and A ₁(LO), respectively, which are allowed by the selection rules. The deposition of silver nanoclusters on the surface of nanostructures leads either to an abrupt increase in the intensity (by a factor of 10³) of Raman scattering of light by surface optical phonons or to the appearance of new surface modes, which indicates the observation of the phenomenon of surface enhanced Raman light scattering. It has been demonstrated that the frequencies of surface optical phonon modes of the studied nanostructures are in good agreement with the theoretical values obtained from calculations performed within the effective dielectric function model.     

Chemical composition of matrix-embedded ternary II–VI nanocrystals derived from first- and second-order Raman spectra

A one- and multiphonon Raman scattering study is performed for an extensive set of CdS_1–xSe_x, Cd_1–yZn_yS, Cd_1–yZn_ySe, and CdSe_1–xTe_x nanocrystals to investigate the applicability of first- and second-order Raman spectra for the determination of the matrix-embedded ternary nanocrystal composition. For one-mode ternary systems both the LO and 2LO phonon frequencies in the Raman spectra are shown to be a good measure of the nanocrystal composition. For two-mode systems, the approaches based on the difference of the LO phonon frequencies (first-order Raman spectra) or double LO overtone and combination tone frequencies (second-order Raman spectra) as well as on the LO phonon band intensity ratios are analysed. The weak electron–phonon coupling in the II–VI nanocrystals and the polaron constant values for the nanocrystal sublattices are discussed.     

Exciton-phonon interaction in mixed silver halides: Resonant Raman scattering vs photoluminescence

An investigation of resonant Raman scattering in mixed crystals of AgBr:Cl at 1.8 K shows that the zero-phonon and LO phonon-assisted exciton luminescence excited in the free indirect exciton absorption, exhibits an anomalous dependence on the exciton photon energy E_L. Close to the exciton gap, the bands show a Raman-like behaviour with their peaks at constant energetic distance from E_L. As E_L is tuned further into the absorption, the bands gradually develop into normal photoluminescence. The effect is explained by taking into account exciton relaxation via scattering by long-wavelength acoustic phonons, a process which is strongly energy dependent. In addition, resonant Raman scattering observed for excitation in the zero-phonon absorption suggests study for the first time of the mode behaviour of certain off-zone center phonons in this system.     

Interaction between electronic and vibronic Raman scattering in heavily doped silicon

The asymmetry in the one-phonon Raman lines of heavily doped p-type Si is interpreted as the interference of a continuum of electronic excitations with the phonon line. The dependence of the line shape on the exciting frequency is produced by the different resonant behavior of these two scattering mechanisms.     

Raman scattering of Zn1−xCdxS mixed crystals

The Raman spectra of Zn_1?xCd_xS crystals are studied. The narrow peak between TO (Γ) and LO (Γ) lines at x ? 0 is due to deffect-induced first order scattering. The anomalously intense peak in the same spectral region at x ? 1 is supposed to be result of resonance interaction between LO (Γ) phonon and quasilocalized vibrations.     

First-order Raman scattering in cylindrical wurtzite nanowire

We have presented a theoretical study on electron resonant Raman scattering (ERRS) process associated with the bulk longitudinal optical (LO), surface optical (SO) and quasi-confined (QC) phonon modes in a free-standing wurtzite nanowire (NW). We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum model. Numerical calculations on the GaN material reveal that differential cross-section (DCS) is sensitive to the wire size. The bulk LO and high-frequency quasi-confined (QC₊) phonons make main contributions to the DCS and the impact of the SO phonon can be negligible in the ERRS process. Moreover, scattering intensity of the bulk LO phonon is strongly enhanced as the incident photon energy approaches the energy band-gap of the GaN.     

Photoluminescence and exciton resonances over the scattered light in multiphonon spectra of resonant scattering in the CdTe/ZnTe superlattices with narrow quantum wells

Photoluminescence and Raman scattering spectra in CdTe/ZnTe heterostructures and superlattices with narrow quantum wells (4.8–9.2 Å) in a temperature range of 5–300 K have been measured. The temperature dependences of the intensity of exciton luminescence in isolated quantum wells have been studied, and the thermal activation energies associated with the effective barriers for electrons and holes have been determined. In CdTe/ZnTe heterostructures, the binding energies of an exciton with a heavy hole have been determined as functions of the quantum well width. The multiphonon Raman spectra that exhibit distinctive features, such as the weak intensity of nLO phonon lines of ZnTe (n < 8), the absence of their dependence on the number n (n > 2), and the multiple participation in scattering of acoustic LA phonons with large wave vector, have been investigated. The results have been explained based on the concept of the relaxation of hot excitons over the exciton band.     

Phonon confinement and substitutional disorder in Cd1−xZnxS nanocrystals

1‐longitudinal optical (LO) phonons in free‐standing mixed Cd_1−xZn_xS nanocrystals, synthesized using chemical precipitation, are investigated using Raman spectroscopy. As expected for the nanocrystals, the 1‐LO modes are found to appear at slightly lower wavenumbers than those in the bulk mixed crystals and exhibit one‐mode behavior. On the other hand, the line broadening is found to be much more than that can be accounted on the basis of phonon confinement. From the detailed line‐shape analysis it turns out that the substitutional disorder in the mixed crystals contributes much more to the line broadening than the phonon confinement. The linewidth arising from these mechanisms are also extracted from the analysis. Copyright © 2009 John Wiley & Sons, Ltd.     

Temperature-dependent polarization of resonance Raman scattering in CdS

Temperature-dependent polarization of the 4658 Å—3LO Raman line was studied together with that of the 4727 Å—2LO Raman line in resonance Raman scattering (RRS) in CdS. Temperature-dependent polarization is strongly related to the A-exciton in CdS as a resonant intermediate state. Experimental results are well understood when RRS around the A-exciton is considered as the inelastic scattering of exciton—polaritons by LO phonons.     

Raman scattering by LO-phonon-plasmon coupled modes in p-type GaAs: Wave vector non conservation

Raman scattering from nearly unscreened LO-phonons in heavily doped p-GaAs has been detected in forbidden configuration resonant near the E₁ energy gap. The observed scattering is explained in terms of coupled LO-phonon-plasmon modes with large wave vectors. The required breakdown of the wave vector conservation is attributed to scattering by the ionized acceptor-impurities (Zn).     

ZnSe/ZnCdSe超晶格的共振拉曼散射特性

ＺｎＳｅ／ＺｎＣｄＳｅ超晶格的共振拉曼散射特性李文深池元斌＊李岩梅＊范希武申德振杨宝均王敬伯（中国科学院长春物理研究所，激发态物理开放实验室长春１３００２１）＊（吉林大学超硬材料国家重点实验室，长春１３００２３）ＲｅｓｏｎａｎｔＲａｍａｎＳｐｅｃｔｒ...     

Raman detection of phonon-phonon coupling in GaxIn1−xP

The coupling between the zone center phonons and continua has been observed and interpreted from the changes in the line shape of the TO Raman spectra and the existence of a side band on the low energy side of the LO phonon in mixed Ga_xIn_1?xP.     

Raman scattering in LiB3O5 single crystals at 300 and 20 K

The Raman-scattering spectra of LiB₃O₅ single crystals at 300 and 20 K have been investigated in detail. The LO- and TO-phonon lines of different symmetries are separated and identified. The reasons for the change in the Raman spectra of LiB₃O₅ upon cooling to 20 K are studied. The intensity ratios for scattering with participation of LO and TO modes of the A ₁ symmetry are found in dependence on the observation geometry.     

High pressure photoluminescence and resonant Raman study of GaAs

Photoluminescence and resonant Raman scattering have been studied in GaAs under hydrostatic stress up to 72 kbar. From the pressure dependence of the photoluminescence intensity the pressure coefficient of the X₆ conduction band minimum in GaAs has been determined. The pressure dependence of zone edge phonon energies in GaAs is also reported.