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研究了1 MeV和1.8 MeV电子辐照下GaInP/GaAs/Ge三结太阳电池的辐照损伤效应.电学性能研究结果表明,GaInP/GaAs/Ge三结太阳电池的开路电压、短路电流和最大功率随辐照剂量的增加发生明显衰降,在1 MeV电子辐照下剂量为1×1015cm-2时,与辐照前相比最大功率衰降了17.7%.暗I-V特性分析表明,高能电子辐照下三结电池串、并联电阻的变化是引起太阳电池电学性能衰降的重要原因.光谱响应分析结果表明,GaInP
关键词:
GaInP/GaAs/Ge太阳电池
电子辐照
电学性能
光谱响应 相似文献
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《物理学报》2017,(4)
传统GaInP/(In)GaAs/Ge三结太阳电池因受其带隙组合的限制,转换效率再提升空间不大.倒装结构三结太阳电池因其更优的带隙组合期望可以得到更高的效率.基于细致平衡原理,结合P-N结形成机理,应用MATLAB语言对双晶格失配GaInP(1.90 eV)/In_xGa_(1-x)As/In_yGa_(1-y)As倒装结构三结太阳电池底、中电池的不同带隙组合进行模拟优化.模拟结果表明在AM1.5D,500倍聚光(500 suns)下,禁带宽度组合为1.90/1.38/0.94 eV的带隙最优,综合材料成本与试验条件,当顶、中电池最优厚度组合为4μm和3.2μm时理论转化效率高达51.22%,此时两个异质结的晶格失配度分别为0.17%和2.36%.忽略渐变缓冲层生长后底电池位错的影响,通过计算0.17%的晶格失配引入1.70×105cm~(-2)的插入位错密度,对比单晶格失配GaInP/GaAs/In_(0.32)Ga_(0.68)As(0.99 eV)倒装结构三结太阳电池光电转化效率仍提高了0.3%. 相似文献
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采用阶变缓冲层技术 (step-graded) 外延生长了具有更优带隙组合的倒装GaInP/GaAs/In0.3Ga0.7As(1.0 eV) 三结太阳电池材料, TEM和HRXRD测试表明晶格失配度为2%的In0.3Ga0.7As 底电池具有较低的穿透位错密度和较高的晶体质量, 达到太阳电池的制备要求. 通过键合、剥离等工艺制备了太阳电池芯片. 面积为 10.922 cm2 的太阳电池芯片在空间光谱条件下转换效率达到32.64% (AM0, 25 ℃), 比传统晶格匹配的 GaInP/GaAs/Ge(0.67 eV) 三结太阳电池的转换效率提高3个百分点.
关键词:
太阳电池
三结
倒装结构 相似文献
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本文研制了直接键合的三结GaInP/GaAs/InGaAsP太阳电池.直接键合技术可以减少晶格不匹配的材料在外延生长过程中产生的线位错和面缺陷,将缺陷限制在界面几十纳米的薄层而不向内扩散,是未来实现高效多结电池的发展趋势之一.此类电池国内鲜有报道.本文键合三结电池的键合界面采用p+GaAs/n+InP结构,得到电池开路电压3.0 V,在电池结构没有优化的情况下获得效率24%,表面未做减反膜.开路电压表明三结电池实现了串联,为单片集成的高效多结电池提供了新的途径.对实验结果进行了分析并给出了改进措施. 相似文献
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Ⅲ-Ⅴ族半导体化合物及其合金的多结太阳电池(重点是GaInP/GaAs叠层电池)有多种直接带隙材料可供选择,因为是直接带隙,其吸收系数高,吸收范围为1~2eV,非常适宜于太阳电池。本文将要建立串联的、两端子的、两结器件模型,并在该模型下对光谱、温度方面的依赖特性进行了分析,讨论其性能,重点做了如何选择带隙和预测相应结构的效率,为多结串联器件的定量理解及定量设计提供基础。虽然重点是两结电池,某些地方也讨论了三结器件GaInP/GaAs/Ge,因为它的技术在空间应用商业化上特别成功。 相似文献
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以GaInP/GaAs/Ge三结太阳电池为研究对象,开展了能量为0.7, 1, 3, 5, 10 MeV的质子辐照损伤模拟研究,建立了三结太阳电池结构模型和不同能量质子辐照模型,获得了不同质子辐照条件下的I-V曲线,光谱响应曲线,结合已有实验结果验证了本文模拟结果,分析了三结太阳电池短路电流、开路电压、最大功率、光谱响应随质子能量的变化规律,利用不同辐照条件下三结太阳电池最大输出功率退化结果,拟合得到了三结太阳电池最大输出功率随位移损伤剂量的退化曲线.研究结果表明,质子辐照会在三结太阳电池中引入位移损伤缺陷,使得少数载流子扩散长度退化幅度随质子能量的减小而增大,从而导致三结太阳电池相关电学参数的退化随质子能量的减小而增大.相同辐照条件下,中电池光谱响应退化幅度远大于顶电池光谱响应退化幅度,中电池抗辐照性能较差,同时中电池长波范围内光谱响应的退化幅度比短波范围更大,表明中电池相关电学参数的退化主要来源于基区损伤. 相似文献
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A new tunnel recombination junction is fabricated for n–i–p type micromorph tandem solar cells. We insert a thin heavily doped hydrogenated amorphous silicon (a-Si:H) p + recombination layer between the n a-Si:H and the p hydrogenated nanocrystalline silicon (nc-Si:H) layers to improve the performance of the n–i–p tandem solar cells. The effects of the boron doping gas ratio and the deposition time of the p-a-Si:H recombination layer on the tunnel recombination junctions have been investigated. The current-voltage characteristic of the tunnel recombination junction shows a nearly ohmic characteristic, and the resistance of the tunnel recombination junction can be as low as 1.5 ·cm 2 by using the optimized p-a-Si:H recombination layer. We obtain tandem solar cells with open circuit voltage V oc = 1.4 V, which is nearly the sum of the V oc s of the two corresponding single cells, indicating no V oc losses at the tunnel recombination junction. 相似文献
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本文用密度泛函理论(DFT)的总能计算研究了一氧化碳和氢原子在Ni(111)表面上p(2×2)共吸附系统的原子结构和电子态,结果表明CO和H原子分别被吸附于两个对角p(1×1)元胞的hcp和fcc位置.以氢分子和CO分子作为能量参考点,总吸附能为2.81 eV,相应的共吸附表面功函数φ为6.28 eV.计算得到的C—O,C—Ni和H—Ni的键长分别是1.19?, 1.96?和 1.71?,并且CO分子以C原子处于hcp的谷位与金属衬底原子结合.衬底Ni(111)的最外两层的晶面间距在吸附后的相对变化分别是
关键词:
Fisher-Tropsch反应
催化作用
Ni(111) p(2×2)/(CO+H)
共吸附 相似文献
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Device simulation of quasi-two-dimensional perovskite/silicon tandem solar cells towards 30%-efficiency 下载免费PDF全文
Xiao-Ping Xie 《中国物理 B》2022,31(10):108801-108801
Perovskite/silicon (Si) tandem solar cells have been recognized as the next-generation photovoltaic technology with efficiency over 30% and low cost. However, the intrinsic instability of traditional three-dimensional (3D) hybrid perovskite seriously hinders the lifetimes of tandem devices. In this work, the quasi-two-dimensional (2D) (BA)2(MA)n-1PbnI3n+1 (n=1, 2, 3, 4, 5) (where MA denotes methylammonium and BA represents butylammonium), with senior stability and wider bandgap, are first used as an absorber of semitransparent top perovskite solar cells (PSCs) to construct a four-terminal (4T) tandem devices with a bottom Si-heterojunction cell. The device model is established by Silvaco Atlas based on experimental parameters. Simulation results show that in the optimized tandem device, the top cell (n=4) obtains a power conversion efficiency (PCE) of 17.39% and the Si bottom cell shows a PCE of 11.44%, thus an overall PCE of 28.83%. Furthermore, by introducing a 90-nm lithium fluoride (LiF) anti-reflection layer to reduce the surface reflection loss, the current density (Jsc) of the top cell is enhanced from 15.56 mA/cm2 to 17.09 mA/cm2, the corresponding PCE reaches 19.05%, and the tandem PCE increases to 30.58%. Simultaneously, in the cases of n=3, 4, and 5, all the tandem PCEs exceed the limiting theoretical efficiency of Si cells. Therefore, the 4T quasi-2D perovskite/Si devices provide a more cost-effective tandem strategy and long-term stability solutions. 相似文献
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In order to considerable enhancement of the efficiency of silicon solar cells, in this paper, for the first time, we present a new proposal for silicon based tandem solar cells. For investigation of this idea, we have evaluated the characteristics of 3C–SiC/Si crystalline tandem solar cells connected series by a tunneling junction, under air mass 1.5 global irradiance spectrums. A 2D simulation including the effects of surface passivation, back surface field (BSF), and carrier tunneling have been performed to obtain the optical and electrical characteristics of single junction silicon, 3C–SiC, and finally the tandem cells. The obtained data illustrate that the best design parameters considering the experimental limitations can be obtained. High energy conversion efficiency for the proposed structure of 26.09% has been achieved for 3C–SiC/Si tandem structure driven by 20.49% and 17.86% conversion efficiencies of single junction Si and 3C–SiC solar cells, respectively. Our results justifies that the higher conversion efficiency of the Si-based tandem structure compared with 3C–SiC and Si cells stems from enhancement of open circuit voltage and fill factor parameter at the hands of decrease in short circuit current limited by the top 3C–SiC cell. 相似文献
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MA Long ZHOU Xiao-Hong M.Oshima Y.Toh ZHANG Yu-Hu GUO Ying-Xiang LEI Xiang-Guo M.Koizumi A.Osa T.Hayakawa Y.Hatsukawa T.Shizuma M.Sugawara 《中国物理C(英文版)》2008,32(1)
The level structure of 190Pt has been studied experimentally using the 176Yb (18O, 4n) reaction at beam energies of 88 and 95 MeV. γ-γ-t coincidence measurements were carried out. Based onthe analysis of γ-γ coincidence relationships, the level scheme of 190Pt is extended to high-spin states. A new structure built on the 3413.6 keV 14+ state has been observed, and the vi1-213/2 vh-19/2 vj (j = p3/2 or f5/2) configuration is tentatively assigned to it. 相似文献
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Perovskite solar cells (PSCs) have witnessed great achievement in the past decade. Most of previous researches focus on the n—i—p structure of PSCs with ultra-high efficiency. While the n—i—p devices usually used the unstable charge transport layers, such as the hygroscopic doped spiro-OMeTAD, which affect the long-term stability. The inverted device with the p—i—n structure owns better stability when using stable undoped organic molecular or metal oxide materials. There are significant progresses in inverted PSCs, most of them related to charge transport or interface engineering. In this review, we will mainly summarize the inverted PSCs progresses related to the interface engineering. After that, we prospect the future direction on inverted PSCs. 相似文献
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Numerical modeling of photovoltaic efficiency of n‐type GaN nanowires on p‐type Si heterojunction 下载免费PDF全文
In this Letter, we investigate the photovoltaic properties of heterojunction solar cells based on n‐GaN nanowire (NW)/ p‐Si substrate heterostructures by means of numerical modeling. Antireflection properties of the NW array on the top of Si substrate were studied theoretically to show an order of magnitude enhancement in antireflection properties in comparison to the pure Si surface (2.5% vs. 33.8%). In order to determine the optimal morphology and doping levels of the structure with maximum possible efficiency we simulated its properties. The carried out simulation showed that the maximum efficiency should be more than 20% under AM1.5D illumination. The proposed design opens new perspectives and opportunities in the field of heterojunction tandem solar cell researches.
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用腺病毒重组体(AdCMV p53/GFP)转染经0.5, 1.0和2.0 Gy γ射线辐射处理的前列腺癌细胞[PC 3( nullp53)], 用克隆形成法检测细胞增殖能力, 用流式细胞分析法测定腺病毒重组体转染率和外源性p53蛋白表达。 结果提示, 辐射诱导使腺病毒重组体转染PC 3细胞提高7%—39%。 辐射联合 AdCMV p53 转染组p53表达水平提高18.5%—35.4%。 与单纯 AdCMV p53 转染组和单纯辐射组相比, 辐射联合 AdCMV-p53 转染组细胞存活率分别降低25%—64%和22%—65%。 To determine whether low dose pre irradiation could enhance adenovirus mediated p53 transfer and expression in human prostate adenocarcinoma, the PC 3 cells were pre exposed to γ rays, and then infected with replication deficient adenovirus recombinant vectors, containing human wild type p53 (AdCMV p53) or green fluorescent protein gene (AdCMV GFP) respectively (γ ray irradiation + AdCMV p53 /GFP infection). The exogenous gene transfer and expression were detected by flow cytometric analysis. The GFP transfer frequencies in γ irradiation + AdCMV GFP infection groups were 7%—39% more than those in AdCMV GFP infection groups. The p53 levels in the γ irradiation + AdCMV p53 infection groups were 18.5%—35.4% more than those in AdCMV p53 infection groups (p<0.05),suggesting that low dose (less than or equal to 1.0 Gy) irradiation could significantly promote exogenous p53 transfer and expression in the PC 3 cells. The survival fractions for the γ irradiation + AdCMV p53 infection groups were 25%—64%, 22%—65% less than those for AdCMV p53 infection, or γ irradiation groups, respectively (p<0.05). 相似文献
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Open-circuit voltage analysis of p-i-n type amorphous silicon solar cells deposited at low temperature 下载免费PDF全文
This paper identifies the contributions of p-a-SiC:H layers and i-a-Si:H layers to the open circuit voltage of p-i-n type a-Si:H solar cells deposited at a low temperature of 125 C.We find that poor quality p-a-SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely.A significant improvement in open circuit voltage has been obtained by using high quality p-a-SiC:H films optimized at the "low-power regime" under low silane flow rates and high hydrogen dilution conditions. 相似文献
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Didier Dominé Peter Buehlmann Julien Bailat Adrian Billet Andrea Feltrin Christophe Ballif 《固体物理学:研究快报》2008,2(4):163-165
In the effort to increase the stable efficiency of thin film silicon micromorph solar cells, a silicon oxide based intermediate reflector (SOIR) layer is deposited in situ between the component cells of the tandem device. The effectiveness of the SOIR layer in increasing the photo‐carrier generation in the a‐Si:H top absorber is compared for p–i–n devices deposited on different rough, highly transparent, front ZnO layers. High haze and low doping level for the front ZnO strongly enhance the current density (Jsc) in the μc‐Si:H bottom cell whereas Jsc in the top cell is influenced by the angular distribution of the transmitted light and by the reflectivity of the SOIR related to different surface roughness. A total Jsc of 26.8 mA/cm2 and an initial conversion efficiency of 12.6% are achieved for 1.2 cm2 cells with top and bottom cell thicknesses of 300 nm and 3 μm, and without any anti‐reflective coating on the glass. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献