GaN中的低压蓝色电致发光

每个电子上外加能量低于发射光子能量时,GaN中已看到蓝色电致发光,这种反斯托克斯发射随电流的立方增加。外功率效率为8×10~(-4)。推荐了一种尝试性的激发机构模型:即由二个过热电子碰撞激发的模型。论讨了这种现象实际应用的希望。     

超短超强激光与固体靶相互作用中超热电子的角分布

 用3TW超短超强激光器进行了激光与固体靶相互作用实验。采用电子角分布仪和LiF热释光探测器探测了超热电子的角分布。测量结果显示：能量较高的电子发射的定向性好于能量较低的电子；能量较低的电子呈溅射状发射；能量较高的电子发射出现两个尖锐的发射峰，其中，激光反射方向的超热电子发射峰则由反射激光、有质动力径向分量、侧向拉曼散射等加速机制共同作用的结果，靠近靶法线方向的超热电子发射峰是由其振吸收机制产生，且理论预言与实验结果相吻合。     

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采用飞秒激光与薄膜靶相互作用测量了前向超热电子的分布和能谱。结果显示,前向超热电子主要集中在靶背法线方向附近区域发射,而超热电子的能谱呈双温类麦克斯韦分布。根据所测超热电子能谱和分布推算出前向超热电子总产额约1.23×108shot-1和前向超热电子的总能量约4.65×1011keV.shot-1,最后给出激光能量转化为前向超热电子能量的转化效率约5.72×10-4,这些结果与文献[17]的较好地一致。     

ZnS:Mn薄膜电致发光锰中心直接碰撞激发的证明

为了阐明在ZnS:Mn薄膜电致发光中锰发光中心的激发机制,测量了光致发光和电致发光的时间—分辨光谱。在光致发光中,ZnS基质和锰中心的发光都观察到了,锰中心的发光可以看到时间延迟,它说明能量由ZnS基质传递到锰中心。与此相反,在电致发光中,难于观察到ZnS基质的发光,而在激发以后立即观察到锰中心的发光。这些实验结果有力地表明在电致发光中,锰中心的激发机制是由于在ZnS基质中的高场加速的过热电子的直接碰撞激发所致。效率的测量电证实了这些结果。     

“神光Ⅱ”基频光黑腔靶实验超热电子诊断

介绍“神光Ⅱ”首次进行大能量基频光黑腔靶实验超热电子实验观测,采用十道滤波荧光谱仪(FFS)测量腔靶发射15—250keV硬x射线谱,由高能x射线谱通量推断超热电子占入射激光能量份额ηhe为13%—16%,由谱的斜率推断超热电子温度Th为35—45keV,由超热电子能量和受激拉曼散射光(SRS)能量的关联,推断超热电子产生的机理,并给出了不同腔靶在不同激光能量EL下超热电子产生的特征 关键词： 1.053μm激光 超热电子 黑腔靶 大能量激光     

快点火靶的新型概念和结构分析

提出了一个快点火靶新型概念和结构分析,在锥的尖端制作一个热斑大小的平台,以避免燃料从锥方向逃逸;在平台中间制作一个微纳米点,以约束热电子发射。或者在平台上制作微纳米点阵列,以抬高阿尔文效应限制的条件。考虑超热电子发射的静电势、材料的逸出功,给出了热电子发射能量公式,根据公式提出了关于快点火靶在材料和结构方面的优化条件和研究内容。比如,提高超热电子发射的静电势,和发射材料的选择等,以优化超热电子的出射能量和方向。     

热电子发射与光电效应

热电子发射与光电效应王家红（山东省招远市第一职业中专２６５４０１）热电子发射与光电效应在中专物理教学中是两个容易混淆的现象，因此，将它们进行分析、对比是很有必要的．１发生的条件完全不同所谓热电子发射，就是给金属丝加热，做热运动的自由电子的能量随金属丝...     

闪烁法测量热电子等离子体电子温度

在稳态磁镜装置中,用电子束和等离子体相互作用的方法产生了热电子氢等离子体。利用闪烁谱仪测量了高能电子轫致辐射能谱,从能谱的斜率得到热电子的温度为46keV。测量了热电子温度与电子束能量、氢气压强、磁场强度的关系,对测量结果进行了分析讨论。     

ZnS:Ho3+和ZnS:HoF3交流电致发光薄膜发光特性的研究

利用高真空条件,分舟蒸发制备ZnS:Ho3+和ZnS:HoF3绿色交流电致发光薄膜屏。讨论了ZnS:Ho3+及ZnS:HoF3薄膜的发光特性和光谱差异。确定其激发机理为热电子直接碰撞激发,以及660nm的发射在低浓度下来自于5F3→5I7的跃迁。并认为在两种材料中,由于热电子在外电场中的加速过程中受到不同散射中心的散射,改变了热电子的统计分布,从而直接引起两种材料发射光谱的明显差异。     

三维热场致发射模型的数值模拟与研究

研究了场致发射与热电子发射的基本理论, 得出热场致发射的适用公式, 探讨了其粒子的初始分布和初始动量, 并在FDTD-PIC原理的基础上编写了软件, 分别实现了场致发射模型, 热电子发射模型和热场致发射模型, 通过分别对一个长楔形阴极器件的数值模拟, 从发射电流特性, 电子初始能量分布等方面验证了其正确性.     

Study of the X-ray emission from Ta plasma obtained by ns laser ablation

In this work, the continuum spectrum of X-rays originated from the interaction of a moderate intensity ns Nd:YAG laser (1064 nm, 9 ns, 30 Hz, 900 mJ, 10¹¹ W/cm²) with Ta target producing plasma is investigated. Plasma expands unisotropically with a velocity, depending on the pressure of the residual gas in the vacuum chamber. The X-ray intensity is a function of the laser energy and of the gas pressure inside the chamber. The X-ray energy is measured with an X-ray filter positioned in front of the Si(Li) solid-state detector. A temperature of about ～1–2 keV of the hot electrons, responsible for the continuum spectrum emission from the plasma, is calculated from the fit of the X-ray spectrum, applying a Maxwellian distribution.     

新结构电致发光薄膜器件各层的优化

本文比较了以SiO为预热层和以SiO2/Y2O3、SiO2/Ta2O5为复合预热层的新结构器件的发光亮度和传导电流,并拟合出这三种器件热电子能量,得出以SiO为预热层的新结构器件的热电子能量和发光亮度最高,比较了以SiO2和ZnS分别作加速层对发光和传导电荷的影响,得出在提高注入电荷方面,以ZnS做加速层优于SiO2做加速层；在提高热电子能量和发光亮度方面,以SiO2做加速层要好于ZnS做加速层。     

Temperature measurements in plasmas generated by using lasers at different intensities

The temperature of laser-generated pulsed plasmas is an important property that depends on many parameters, such as the particle species and the time elapsed from the laser interaction with the matter and the surface characteristics.

Laser-generated plasmas with low intensity (<10¹⁰ W/cm²) at INFN-LNS of Catania and with high intensity (>10¹⁴ W/cm²) in PALS laboratory in Prague have been investigated in terms of temperatures relative to ions, electrons, and neutral species. Time-of-flight (ToF) measurements have been performed with an electrostatic ion energy analyzer (IEA) and with different Faraday cups, in order to measure the ion and electron average velocities. The IEA was also used to measure the ion energy, the ion charge state, and the ion energy distribution.

The Maxwell–Boltzmann function permitted to fit the experimental data and to extrapolate the ion temperature of the plasma core.

The velocity of the neutrals was measured with a special mass quadrupole spectrometer. The Nd:Yag laser operating at low intensity produced an ion temperature core of the order of 400 eV and a neutral temperature of the order of 100 eV for many ablated materials. The ToF of electrons indicates the presence of hot electron emission with an energy of ～1 keV.     

Hot electron photoluminescence in GaAs crystals

The spectrum and the linear polarization of photoluminescence of hot electrons in GaAs crystals were investigated. Oscillations in the hot photoluminescence (HPL) spectrum due to the subsequent emission of LO-phonons were observed. The study of HPL depolarization in an external magnetic field yielded the scattering time due to the emission of a LO-phonon by a hot electron in the Γ-valley (τ_?0 = 1 × 10^?13 sec) as well as the Γ?L intervalley scattering time. The radiative recombination of hot electrons created in the central Γ-valley via the subsidiary L-valley was observed. The distribution function of hot electrons in a wide energy range was evaluated from the spectra.     

X-ray emission from plasma generated by nanosecond laser irradiating tantalum

A continuum spectrum of X-rays, originating from the interaction of a moderate intensity nanosecond Nd:Yag laser (1064 nm, 9 ns, 30 Hz, 900 mJ, 10¹¹ W/cm²) with metal targets producing plasma, is investigated. The photon emission intensity is particularly high when the plasma expands in a low-pressure gas. The photon energy is measured through selective thin absorber films employed in front of the solid state detector. The temperature of the hot electrons generated from the plasma, responsible for the continuum spectrum emission, is calculated from the fit of the X-ray spectrum with a Maxwellian distribution, and it is about 1–2 keV.     

Relative performance of a 1.06 μm laser with various Nd doped crystals

Laser emission at 1.06 μm has been observed from Nd: doped YAG, KGW and SGGM crystals pumped by a linear Xe-gas filled flashlamp in the input energy range of 1–25 J. The intrinsic slope efficiency has been determined to be 8.84%, 2.25% and 1.25% from Nd: KGW (Nd: 3% atomic), Nd: YAG (Nd: 1.0% atomic) and Nd: SGGM (Nd: 4% atomic), respectively.     

ZnS:Cu,Nd,Cl薄膜电致发光出现受激发射的可能性

ZnS:Cu,Nd,Cl具有很好的直流电致发光,而且钕离子是一个稳定的发光中心,加之薄膜发光器件有两个平行电极,可以形成一个谐振腔.本文探讨了ZnS:Cu,Nd,Cl薄膜电致发光出现受激发射的可能性.在实验上发现,来自4F3/2到4I9/2和4I11/2能级之间的跃迁中某些谱线强度随外加电压的增加而非常迅速地增加,这很可能是能级之间出现粒子数反转,并在适当谐振条件下产生了受激发射.     

Scaling hot-electron generation to high-power, kilojoule-class laser-solid interactions

Thin-foil targets were irradiated with high-power (1 ≤ P(L) ≤ 210 TW), 10-ps pulses focused to intensities of I>10(18) W/cm(2) and studied with K-photon spectroscopy. Comparing the energy emitted in K photons to target-heating calculations shows a laser-energy-coupling efficiency to hot electrons of η(L-e) = 20 ± 10%. Time-resolved x-ray emission measurements suggest that laser energy is coupled to hot electrons over the entire duration of the incident laser drive. Comparison of the K-photon emission data to previous data at similar laser intensities shows that η(L-e) is independent of laser-pulse duration from 1 ≤ τ(p) ≤ 10 ps.     

Cyclotron resonance study of conduction electrons in n-type indium antimonide under a strong magnetic field—II: Hot electrons

A system of hot electrons in the n-InSb under the application of a strong magnetic field has been studied by far IR cyclotron resonance. A three band model and an energy independent scattering time were assumed in analyzing the line shape variation with electric field applied either parallel or perpendicular to the magnetic field. Two kinds of electron temperature, inter- and intra-subband, were introduced to describe the electron distribution in energy space. The electron distribution function was found to deviate from an essentially Maxwellian form in the manner predicted by Yamada and Kurosawa. A remarkable difference exists between the two geometries: E∥H and E⊥U. A brief survey of cyclotron emission, and the reverse process of hot electron cyclotron absorption, is summarized at the end as an addendum.     

Energy relaxation of excitonlike polaritons in semiconductor microcavities: Effect on the parametric scattering of polaritons

Polariton emission in GaAs-based microcavities has been studied under variable conditions, which made it possible to excite (a) polaritons from the upper polariton branch and hot free polaritons and electrons, (b) polaritons from the lower polariton branch (LPB) and localized excitons, and (c) the mixed system. Variation of the excitation conditions leads to substantial differences in the energy distributions of polaritons and in the temperature dependences of polariton emission. It is established that the energy relaxation of resonantly excited LPB polaritons via polariton and localized exciton states at liquid helium temperatures is ineffective. Instead, the relaxation bottleneck effect is suppressed with increasing temperature by means of exciton delocalization (due to thermal excitation by phonons). The most effective mechanism of relaxation to the LPB bottom is via scattering of delocalized excitons on hot free carriers. It is found that the slow energy relaxation of polaritons excited below the free exciton energy can be significantly accelerated at low temperatures by means of additional weak generation of hot excitons and, especially, hot electrons. This acceleration of the energy relaxation of polaritons by means of additional overbarrier photoexcitation sharply decreases the barrier for stimulated parametric scattering of polaritons excited at an LPB inflection point. Therefore, additional illumination can be used to control the polariton-polariton scattering.