Effects of Ga contents on properties of CIGS thin films and solar cells fabricated by co-evaporation technique

This study examined the effects of Ga content in the CIGS absorber layer on the properties of the corresponding thin films and solar cells fabricated using a co-evaporation technique. The grain size of CIGS films decreased with increasing Ga content presumably because Ga diffusion during the 2nd stage of the co-evaporation process is more difficult than In diffusion. The main XRD peaks showed a noticeable shift to higher diffraction angles with increasing Ga content, which was attributed to Ga atoms substituting for In atoms in the chalcopyrite structure. Band gap energy and the net carrier concentration of CIGS films increased with Ga/(In + Ga) ratios. Regarding the solar cell parameters, the short circuit current density (J_SC) decreased linearly with Ga/(In + Ga) ratios due to the lack of absorption in the long-wavelength portion of the spectrum, while the open circuit voltage (V_OC) increase with those. However, V_OC values at high Ga/(In + Ga) regions (>0.35) was far below than those extrapolated from the low Ga contents regions, finally resulting in an optimum Ga/(In + Ga) ratio of 0.28 where the solar cell showed the highest efficiency of 15.56% with V_OC, J_SC and FF of 0.625 V, 35.03 mA cm⁻² and 0.71, respectively.     

The effect of compositional disorder on electronic band structure in GaxIn1 − xAsySb1 − yalloys lattice matched to GaSb

A pseudopotential formalism coupled with the virtual crystal approximation are applied to study the effect of compositional disorder upon electronic band structure of cubic Ga_xIn_1 − xAs_ySb_1 − yquarternary alloys lattice matched to GaSb. The effects of compositional variations are properly included in the calculations. Our theoretical results show that the compositional disorder plays an important role in the determination of the energy band structure of Ga_xIn_1 − xAs_ySb_1 − y/GaSb and that the bowing parameter is dominated by the group V-anion-based sublattice. Moreover, the absorption at the fundamental optical gaps is found to be direct within a whole range of the x composition.     

Simulation of temperature-dependent material parameters and device performances for GaInAsSb thermophotovoltaic cell

Temperature-dependent material parameters and device performances of Ga_xIn_1−xAs_1−ySb_y TPV cells applied in low temperature (800–1200 °C) radiators are simulated using the PC-1D. As is well known, the optimum bandgap (E_g) decreases towards lower radiator temperatures. So far, the lowest achievable E_g of Ga_xIn_1−xAs_1−ySb_y at 300 K is 0.5 eV. We mainly considering the Ga_0.8In_0.2As_0.18Sb_0.82 (E_g = 0.5 eV) TPV cell. The effects of doping concentration and recombination mechanisms of the emitter layer on photovoltaic conversion efficiencies (η_cel) are analyzed in detail, and η_cel can be improved by optimizing doping concentration and suppressing carrier recombination. The effects of GaSb window layer on η_cel are also presented. It shows the type-II energy-band alignment GaSb(window)/GaInAsSb(emitter) heterostructure affect η_cel mainly through V_oc. For the first time, the effects of operating temperatures on device performances are analyzed based on temperature-dependent material parameters, and the temperature coefficients of the device performances are presented.     

Investigation of a graded channel InGaAs/GaAs heterostructure transistor

An InGaAS/GaAs heterostructure transistor utilizing a gradedIn_xGa_1 − xAs channel grown by low-pressure metal-olorganic chemical vapor deposition has been demonstrated. A negative differential resistance (NDR) phenomenon is observed. Electron mobilities are significantly improved by using the graded InGaAs channel. For the In composition varying fromx =  0.25 (at the buffer–channel interface) to x =  0.1 (at the spacer–channel interface) structure, a peak extrinsic transconductance of 24.6 S mm ^− 1(atV_DS =  6.5 V,V_GSstep =  − 0.5 mV) and a saturation current density as high as 555 mA mm ^− 1for a gate length of 1.5 μ m are obtained.     

A CMOS bandgap reference voltage generator with reduced voltage variation and BJT area

This paper proposes a new bandgap reference (BGR) circuit which adopts a cascode current mirror biasing for reducing the reference voltage variation and a novel sizing method for reducing the PNP BJT area. The proposed BGR was designed and fabricated using 0.18 μm triple-well CMOS process which provides only normal V_TH transistors.The reference voltage variation of BGR was reduced from 0.5 mV (conventional) to 0.09 mV (proposed) using cascode current mirror biasing method. And the ratio of BJT emitter areas was reduced by a factor of 20 through the novel sizing method.     

An oxygen permeable membrane La0.8Sr0.2(Ga0.8Mg0.2)1 − xCrxO3 − δ for a reduced atmosphere

Mixed electron hole and oxide ion conducting perovskite-type oxides, La_0.8Sr_0.2(Ga_0.8Mg_0.2)_1 ? xCr_xO_3 ? δ (0 ≤ x ≤ 1.0)_, were prepared by solid state reaction. The phase stability and the oxygen permeation properties of the oxides were examined as a function of the content of Cr. La_0.8Sr_0.2(Ga_0.8Mg_0.2)_1 ? xCr_xO_3 ? δ has a perovskite related tetragonal phase with x = 0.1 to 0.8. The total electrical conductivity of La_0.8Sr_0.2(Ga_0.8Mg_0.2)_1 ? xCr_xO_3 ? δ increases with increasing x. The oxygen permeation flux across the La_0.8Sr_0.2(Ga_0.8Mg_0.2)_1 ? xCr_xO_3 ? δ membranes at higher temperatures increases with x up to x = 04. The maximum oxygen permeation flux of 1.6 × 10^? 7 mol^? 1 cm^? 2 at 1100 °C in a oxygen activity gradient of air/10^? 2 Pa is observed in La_0.8Sr_0.2(Ga_0.8Mg_0.2)_0.6Cr_0.4O_3 ? δ. This perovskite-type oxide is stable under an oxygen partial pressure of 7 × 10^? 10 Pa at 1000 °C.     

La0.8Sr0.2Cr1 − xRuxO3 − δ–Gd0.1Ce0.9O1.95 solid oxide fuel cell anodes: Ru precipitation and electrochemical performance

Composites containing La_0.8Sr_0.2Cr_1 ? xRu_xO_3 ? δ (LSCrRu) with x = 0–0.25 and Gd_0.1Ce_0.9O_1.95 (GDC) were studied as anodes in solid oxide fuel cells (SOFCs) with La_0.9Sr_0.1Ga_0.8Mg_0.2O_3 ? δ (LSGM) electrolytes. Electrode polarization resistance R_P decreased during initial SOFC operation before reaching a minimum. The decrease was more rapid, and the ultimate R_P value reached was generally lower, with increasing temperature and Ru content x. R_P was stable at longer times except for x = 0.25 where it increased slightly. SOFCs with x = 0.18 anodes at 800 °C yielded power densities as high as 0.53 W/cm² with an R_P value, including the (La,Sr)(Co,Fe)O₃–GDC cathode, of < 0.15 Ω cm². Transmission electron microscopy revealed Ru nano-particles on LSCrRu surfaces; their size increased and their density decreased with increasing temperature. Increasing the Ru content increased the density of Ru surface particles at a given time and temperature. Measured early-stage Ru surface coverage values were consistent with a model where Ru supply to the LSCrRu surface was limited by Ru bulk out-diffusion, but the coverage saturated at longer times. There was surprisingly little Ru particle coarsening over times up to 1000 h at 800 °C, with Ru particles sizes remaining < 10 nm. The cell R_P values generally decreased with increasing Ru nano-particle surface area.     

The effect of In/N ratio on the optical quality and lasing threshold in GaxIn1 − xAs1 − yNy/GaAs laser structures

We present a review of published work concerning the effect of In and N compositions on the operation wavelength, optical quality and lasing threshold in Ga_xIn_1 − xAs_1 − yN_y/GaAs QW and double heterostructure lasers. We show that the emission wavelength in the range between 1.0 and 1.4 μ m can be obtained for a wide range of In and/or N concentrations. However, in most Fabry–Perot lasers and vertical cavity surface emitting lasers (VCSELs) reported in the literature, the threshold current density plotted as a function of the relative In/N composition (R =  (1  − x) / y) indicate a broad minima for 40  < R <  70, suggesting an optimum relative composition. We also present the results of our studies concerning the optical quality of Ga_xIn_1 − xAs_1 − yN_y/GaAs single quantum wells for R =  15. We show that the optical quality of GaInAsN can be improved while achieving a red shift in the PL spectra. This is unlike the results obtained by rapid thermal annealing or conventional annealing, which are widely employed as post-growth treatment techniques, where any increase in the PL intensity is almost always accompanied by an undesired blue shift.     

Electric property of mixed conductor BaIn1−xCoxO3−δ

We synthesized BaIn_1−xCo_xO_3−δ (x = 0–0.8) with a defective perovskite structure by partly replacing In with Co in Ba₂In₂O₅. Based on XRD measurements, the synthesized compound was found to have cubic perovskite and orthorhombic brownmillerite structures depending on the amount of Co. BaIn_1−xCo_xO_3−δ (x = 0.2 and 0.3) showed high total electrical conductivities without undergoing the structural transformation that the original Ba₂In₂O₅ undergoes. Some of the samples showed both electronic and oxide ionic conductivities. At the same time, the oxide ionic conductivity was comparable with that of Ba₂In₂O₅. For example, the sample with x = 0.1 had a total electrical conductivity of 4.7 × 10^− 1 S cm^− 1 and an oxide ion transport number of 0.52 at 850 °C.     

BaT2As2 single crystals (T = Fe,Co, Ni) and superconductivity upon Co-doping

The crystal structure and physical properties of BaFe₂As₂, BaCo₂As₂, and BaNi₂As₂ single crystals are surveyed. BaFe₂As₂ gives a magnetic and structural transition at T_N = 132(1) K, BaCo₂As₂ is a paramagnetic metal, while BaNi₂As₂ has a structural phase transition at T₀ = 131 K, followed by superconductivity below T_c = 0.69 K. The bulk superconductivity in Co-doped BaFe₂As₂ below T_c = 22 K is demonstrated by resistivity, magnetic susceptibility, and specific heat data. In contrast to the cuprates, the Fe-based system appears to tolerate considerable disorder in the transition metal layers. First principles calculations for BaFe_1.84Co_0.16As₂ indicate the inter-band scattering due to Co is weak.     

A-deficit LSCF for intermediate temperature solid oxide fuel cells

A-deficit La_0.54Sr_0.44Co_0.2Fe_0.8O_3 ? δ cathode material for intermediate temperature solid oxide fuel cells (IT-SOFCs) was synthesized by a citrate complexation (Pechini) route. Using La_0.54Sr_0.44Co_0.2Fe_0.8O_3 ? δ as cathode material, a superior cell performance with the maximum power density of 309, 470 and 855 mW cm^? 2 at 600, 650 and 700 °C was achieved, in contrast with the maximum power density of 266, 354 and 589 mW cm^? 2 using conventional La_0.6Sr_0.4Co_0.2Fe_0.8O_3 ? δ as cathode material at the same temperatures. The reason of this improvement was analyzed on the basis of defect chemistry. Thermal shrinkage experiment testified that the oxygen vacancies in La_0.54Sr_0.44Co_0.2Fe_0.8O_3 ? δ are more mobile than in La_0.6Sr_0.4Co_0.2Fe_0.8O_3 ? δ. Furthermore, theoretical calculation in terms of their composition and the shift of peak position in XRD pattern showed that the concentration of oxygen vacancies of La_0.54Sr_0.44Co_0.2Fe_0.8O_3 ? δ is higher than that of La_0.6Sr_0.4Co_0.2Fe_0.8O_3 ? δ. Therefore, the oxygen ion conductivity via vacancies transfer mechanism is enhanced, which induces the polarization resistance of La_0.54Sr_0.44Co_0.2Fe_0.8O_3 ? δ being decreased with a result of cell performance improved.     

Suppression of superconductivity in Zn-doped SmFeAsO0.8F0.2 system

A series of SmFe_1?xZn_xAsO_0.8F_0.2 samples with x = 0, 0.05, 0.1, 0.2 and 0.4 have been successfully synthesized using a solid state method. The lattice parameters are found to increase with increasing Zn doping content. The superconductivity has been definitely suppressed by Zn doping at Fe site with the transition temperature T_c being reduced from 52.5 K to 23.3 K for the sample of x = 0.05, and to 18.2 K for the sample of x = 0.1. For the samples with x > 0.1, the superconducting transition vanishes, and, at the meantime, the spin-density-wave anomaly recovers at 140 K. The metal to semiconductor transition is also observed in the SmFe_1?xZn_xAsO_0.8F_0.2 system. The behavior of SmFe_1?xZn_xAsO_0.8F_0.2 is very different from that of R_EFeAsO (R_E = rare earth metal), which reveals a very strong electron correlation in SmFe_1?xZn_xAsO_0.8F_0.2.     

Observation of confined states in anIn0.53Ga0.47As/In0.52Al0.48Asmulti-quantum wells structure by quantum confined Stark effects

Photocurrent spectra in an In_0.53Ga_0.47As /In_0.52Al_0.48As multi-quantum wells structure containing 9.4 nm wide wells were measured at room temperature in electric fields. The exciton peaks of ground-state transitions shifted fairly in 167 kV cm ^− 1as the quantum confined Stark effect. Stark shifts were calculated by using the Runge–Kutta method using the effective mass equation with our experimental band parameters. Our parameters are the hole effective masses and valence band offset derived from saturation of a highest eigen energy, electron effective mass depending on energies and the conduction band offset derived from observed quantum number. It was possible to sufficiently use our experimental band parameters for the calculation of the Stark shift in the electric field.     

Dependence of magnetic ordering temperature of doped and undoped EuFe2As2 on hydrostatic pressure to 0.8 GPa

The ac susceptibility of single crystalline tetragonal EuFe₂As₂, EuFe₂As_1.4P_0.6, and EuFe_1.715Co_0.285As₂ has been measured over the temperature and hydrostatic (He-gas) pressure ranges 10–60 K and 0–0.8 GPa, respectively. For all three samples the magnetic ordering temperature (17–19 K) from the Eu sublattice increases linearly with pressure, presumably due to the enhanced exchange coupling between Eu-layers. No evidence for a superconducting transition was observed in the susceptibility for any sample over the measured temperature/pressure range.     

Interface property of silicon nitride films grown by inductively coupled plasma chemical vapor deposition and plasma enhanced chemical vapor deposition on In0.82Al0.18As

Au/silicon nitride/In_0.82Al_0.18As metal insulating semiconductor (MIS) capacitors were fabricated and then investigated by capacitance voltage (C–V) test at variable frequencies and temperatures. Two different technologies silicon nitride (SiN_x) films deposited by inductively coupled plasma chemical vapor deposition (“ICPCVD”) and plasma enhanced chemical vapor deposition (“PECVD”) were applied to the MIS capacitors. Fixed charges (N_f), fast (D_it) and slow (N_si) interface states were calculated and analyzed for the different films deposition MIS capacitors. The D_it was calculated to be 4.16 × 10¹³ cm⁻² eV⁻¹ for “ICPCVD” SiN_x MIS capacitors, which was almost the same to that of “PECVD” SiN_x MIS capacitors. The D_it value is obviously higher for the extended wavelength In_xGa_1−xAs (x > 0.53) epitaxial material as a result of lattice mismatch with substrate. Compared to the results of “PECVD” SiN_x MIS capacitors, the N_si was significantly lower and the N_f was slightly lower for “ICPCVD” SiN_x MIS capacitors. X-ray photoelectron spectroscopy (XPS) analysis shows good quality of the “ICPCVD” grown SiN_x. The low temperature deposited SiN_x films grown by “ICPCVD” show better effect on decreasing the dark current of In_xGa_1−xAs photodiodes.     

Preparation of LSGM powders for low temperature sintering

La_0.8Sr_0.2Ga_0.8Mg_0.2O_2.8 powders were prepared by carbonate coprecipitation and the tuning of the cation composition by a solid state reaction. The relative compositions of La, Sr, Ga, and Mg were dependent upon the supersaturation ratio (R = [(NH₄)₂CO₃]/([La³⁺] + [Sr²⁺] + [Ga³⁺] + [Mg²⁺])) during the coprecipitation. The coprecipitation of a Sr-deficient source solution and the subsequent replenishment of SrO and MgO by ball milling were effective for accomplishing a phase-pure La_0.8Sr_0.2Ga_0.8Mg_0.2O_2.8 specimen by low-temperature sintering.     

Magnetic structures of non-stoichiometric hexagonal RNi1−xIn1+x (R=Dy,Ho, Er) compounds

Results of neutron diffraction studies of DyNi_0.9In_1.1, HoNi_0.8In_1.2 and ErNi_0.9In_1.1 compounds crystallizing in the hexagonal ZrNiAl-type structure are reported. Previously published data for stoichiometric 1–1–1 compounds indicate that HoNiIn and ErNiIn compounds are ferromagnets (ordering along the c-axis) with T_C of 22 and 9 K, respectively, while DyNiIn was found to be an antiferromagnet with T_N of 32 K (J. Magn. Magn. Mater. 262 (2003) L177; J. Magn. Magn. Mater., in press). DC bulk magnetic measurements show that with the rise of the x parameter the ordering temperature is lowered; moreover changes in the magnetic ordering occur. At 1.5 K the HoNi_0.8In_1.2 compound has a non-collinear magnetic structure, for the ErNi_0.9In_1.1 compound an additional sine-modulated component lying in the basal plane was found. For the DyNi_0.9In_1.1 compound the antiferromagnetic character of magnetic coupling is conserved, but some changes in comparison to 1–1–1 stoichiometry were noticed.     

Effect of Fe doping on the room temperature ferromagnetism in chemically synthesized (In1−xFex)2O3 (0 ⩽ x ⩽ 0.07) magnetic semiconductors

Observation of room temperature ferromagnetism in Fe doped In₂O₃ samples (In_1−xFe_x)₂O₃ (0 ⩽ x ⩽ 0.07) prepared by co-precipitation technique is reported. Lattice parameter obtained from powder X software shows distinct shrinkage of the lattice constant indicating an actual incorporation of Fe ions into the In₂O₃ lattice. X-ray diffraction data measurements show that the entire sample exhibits single phase polycrystalline behavior. SEM micrographs showed the prepared powder was in the range 25–36 nm. SEM EDS mapping showed the presence of Fe and In ions in the Fe doped In₂O₃ sample. The highest remanence magnetization moment (6.624 × 10⁻⁴ emu/g) is reached in the sample with x = 0.03.     

A ceria layer as diffusion barrier between LAMOX and lanthanum strontium cobalt ferrite along with the impedance analysis

A thin interlayer of samarium doped ceria (SDC) is applied as diffusion barrier between La_1 ? xSr_xCo_yFe_1 ? yO₃ x = 0.1–0.4, y = 0.2–0.8 (LSCF) cathode and La_1.8Dy_0.2Mo_1.6W_0.4O₉ (LDMW82) electrolyte to obstruct Mo–Sr diffusion and solid state reaction in the intermediate temperature range of SOFC. We demonstrate the effectiveness of the diffusion barrier through contrasting the clearly defined interfaces of LSCF/SDC/LDMW82 against a rugged growing product layer of LSCF/LDMW82 in 800 °C thermal annealing, and analyze the product composition and the probable new phase. In addition, the measured polarization resistance is considerably lower for the half-cell with a diffusion barrier. Therefore, the electrochemical performance of the LSCF cathode is investigated on the SDC-protected LDMW82. The cell with LSCF (x = 0.4) persistently outperforms the one with x = 0.2 in polarization resistance because of its small low-frequency contribution. The activation energy of polarization resistance is also lower for La_0.6Sr_0.4Co_yFe_1 ? yO₃ (112–135 kJ/mol), than that for La_0.8Sr_0.2Co_yFe_1 ? yO₃ (156–164 kJ/mol). La_0.6Sr_0.4Co_yFe_1 ? yO₃ y = 0.4–0.8 is the proper composition for the cathode interfaced to SDC/LDMW82.     

Conductivity and oxygen permeability of a novel oxide Pr2Ni0.8 − x Cu0.2FexO4 and its application to partial oxidation of CH4

Iron-doped Pr₂Ni_0.8Cu_0.2O₄ was studied as a new mixed electronic and oxide-ionic conductor for use as an oxygen-permeating membrane. An X-ray diffraction analysis suggested that a single phase K₂NiF₄-type structure was obtained in the composition range from x = 0 to 0.05 in Pr₂Ni_0.8 − xCu_0.2Fe_xO₄. It is considered that the doped Fe is partially substituted at the Ni position in Pr₂NiO₄. The prepared Pr₂NiO₄-based oxide exhibited a dominant hole conduction in the P_O2 range from 1 to 10^− 21 atm. The electrical conductivity of Pr₂Ni_0.8−xCu_0.2Fe_xO₄ is as high as 10² S cm^− 1 in the temperature range of 873–1223 K and it gradually decreased with the increasing amount of Fe substituted for Ni. The oxygen permeation rate was significantly enhanced by the Fe doping and it was found that the highest oxygen permeation rate (60 μmol min^− 1 cm^− 2) from air to He was achieved for x = 0.05 in Pr₂Ni_0.8 − xCu_0.2Fe_xO₄. Since the chemical stability of the Pr₂NiO₄-based oxide is high, Pr₂Ni_0.75Cu_0.2Fe_0.05O₄ can be used as the oxygen-separating membrane for the partial oxidation of CH₄. It was observed that the oxygen permeation rate was significantly improved by changing from He to CH₄ and the observed permeation rate reached a value of 225 μmol min^− 1 cm^− 2 at 1273 K for the CH₄ partial oxidation.