Photoelectrochemical properties of Fe2O3-Nb2O5 films prepared by sol-gel method

Fe2O3-Nb2O5 coating films of various Nb/(Fe + Nb) mole ratios were prepared on nesa silica glass substrates from Fe(NO3)3.9H2O - NbCl5 - CH3(CH2)2CH2OH - CH3COOH solutions by the sol-gel method. The photoanodic properties were studied in a three-electrode cell with an aqueous buffer solution of pH = 7 as the supporting electrolyte. The crystalline phases identified were alpha-Fe2O3 (Nb/(Fe + Nb) = 0), alpha-Fe2O3 + FeNbO4 (Nb/(Fe + Nb) = 0.25), FeNbO4 (Nb/(Fe + Nb) = 0.5), FeNbO4 + Nb2O5 (Nb/(Fe + Nb) = 0.75), and Nb2O5 (Nb/(Fe + Nb) = 1). When the Nb/(Fe + Nb) mole ratio increased from 0 to 0.25, the crystalline phases changed from alpha-Fe2O3 to alpha-Fe2O3 + FeNbO4, the photoanodic current under white light illumination increased, and the photoanodic current under monochromatized light illumination increased in both visible and ultraviolet regions. When the Nb/(Fe + Nb) ratio increased over 0.25, the crystalline phases changed to FeNbO4, FeNbO4 + Nb2O5, or Nb2O5, and the photoanodic current decreased. The sample consisting of alpha-Fe2O3 and FeNbO4 (Nb/(Fe + Nb) = 0.25) exhibited photoresponse extending to 600 nm and an IPCE of 18% at a wavelength of 325 nm.     

Thick Fe2O3, Fe3O4 films prepared by the chemical solution deposition method

Fe₂O₃, Fe₃O₄ films have been prepared from Fe(OCH₂CH(CH₃)₂)₃–(CH₃)₂CHCH₂OH–2.2′-diethanola- mine (DEA)–poly(vinylpyrrolidone) (PVP) solutions by the spin-(SC) and dip-coating (DC) technique on SiO₂ and Si substrates. The maximum film thickness achieved without crack formation has been increased by incorporation of PVP (relative molecular weights 40000 and 360000) into the precursor solution. The stability of the precursor solutions was remarkably increased by addition of DEA. Compact, dense, and crack-free Fe₂O₃ films with thicknesses 900 nm (DC), 450 nm (SC), have been obtained via single-step deposition cycle. Higher-molecular-weight PVP has been more effective in increasing the thickness. The minimum concentration of DEA, which results in pronounced increase of solutions stability, is about R _P (n(DEA)/n(Fe) = 0.1). The high content of carboneous residue in the pyrolysed Fe₂O₃ films promotes the formation of Fe₃O₄ films via reduction in a gas flow of H₂/N₂ gas mixture. Microstructure, surface morphology, and magnetic properties of the films have been also investigated using SEM, AFM, and SQUID, respectively.     

溶胶凝胶法制备CexCo2-xAlO4复合氧化物及其催化分解N2O

用柠檬酸-溶胶凝胶法制备了CexCo2-xAlO4系列复合氧化物和K2CO3改性催化剂,考察了复合氧化物组成、母液pH值、钾负载量对N2O催化剂活性的影响,用N2物理吸附、X射线衍射（XRD）、扫描电镜（SEM）、H2程序升温还原（H2-TPR）、O2程序升温脱附（O2-TPD）、X射线光电子能谱（XPS）等方法表征了催化剂结构。结果表明：用Ce取代Co2AlO4中部分Co制得的CexCo2-xAlO4复合氧化物催化活性有所提高,其中母液pH=2、组成为Ce0.05Co1.95AlO4的催化剂活性较高,该催化剂具有较高的比表面积、较小的晶粒及Ce-Co间的协同效应;进一步研究表明,由于K粒子的电子效应,使得0.05K/Ce0.05Co1.95AlO4的催化活性又优于其他催化剂,有氧气氛中450C连续反应50h,N2O分解率达98.5%。     

Preparation and characterization of CoFe2O4/TiO2 magnetic composite films

CoFe₂O₄/TiO₂ magnetic composite films were prepared using the sol-gel method with tetrabutyltitanate and metallic chlorates as starting materials. The effects of heat treatment temperatures on microstructures and on magnetic properties were studied. The microstructure and properties of the samples at different heat treatment temperatures were characterized by X-ray diffraction, Raman spectrum, scanning electron microscopy, polarized microscopy and vibrating sample magnetometry. The results show that crystals of different substances grow up independently. Cobalt ferrite is evenly embedded into the titanium dioxide matrix in the prepared composite films. The magnetism of the composite films is enhanced with an increase of the heat temperature.     

Preparation and characterization of Li4/3Ti5/3O4/Ag composite prepared by sol-gel technique

The powders of Li_4/3Ti_5/3O₄/Ag composite were prepared by sol-gel technique. Structural identification, surface morphology and electrochemical properties of the powders were studied by X-ray diffraction, scanning electron microscopy and galvanostatic charge-discharge experiments. The results show that Li_4/3Ti_5/3O₄/Ag composite derived from sol-gel is a composite of Li_4/3Ti_5/3O₄ and silver. Li_4/3Ti_5/3O₄/Ag composite shows higher specific capacity, higher columbic efficiency and lower polarization than Li_4/3Ti_5/3O₄. The addition of silver greatly improves the cycleability of Li_4/3Ti_5/3O₄, especially at higher charge-discharge rate.     

一步水热合成Y-Co3O4复合氧化物催化剂及催化分解N2O

用一步水热、分步水热、浸渍等方法分别制备Y-Co₃O₄复合氧化物,用于催化分解N₂O的反应,其中,一步水热法制备的催化剂活性较高。再用一步水热法制备了不同Y/Co物质的量比的Y-Co₃O₄复合氧化物,在优化出的催化剂（0.03Y-Co₃O₄）表面浸渍K₂CO₃溶液,制备K改性催化剂（0.02K/0.03Y-Co₃O₄）。用X射线衍射（XRD）、N₂物理吸附、H₂程序升温还原（H₂-TPR）、O₂程序升温脱附（O₂-TPD）、扫描电镜（SEM）、X射线光电子谱（XPS）等技术表征催化剂结构。研究发现,Co₃O₄和Y-Co₃O₄同为尖晶石结构,但Y-Co₃O₄的催化活性显著高于Co₃O₄。K改性增加了催化剂表面的活性位（Co²⁺）,还有利于吸附氧的脱除,从而提高了催化剂活性。在无氧无水、有氧无水、有氧有水气氛中,K改性催化剂上的N₂O全分解温度分别为325、350、375 ℃,催化剂活性较高。有氧有水气氛350 ℃连续反应50 h,K改性催化剂上N₂O分解率保持90%以上,稳定性较高。研究发现,Y-Co₃O₄及K改性催化剂上N₂O分解反应的E_a和lnA之间存在动力学补偿效应。     

Biological activity of functionalized SiO2 thin films prepared by sol-gel method

In this work we investigated the biological properties of sol-gel films in aqueous medium. Functionalized silica films were prepared by the sol-gel process, from organically modified silicon alkoxides with amino or thiol groups. Covalent binding of proteins with different orientations according to the hydrophilic or hydrophobic character of the surface was studied. This binding occurred via a covalent coupling agent providing a very stable linkage. No denaturation was detected and a good detection of the antigen was observed. Immunoassays have demonstrated the biological activity of grafted antibodies.     

CoFe2O4-TiO2 and CoFe2O4-ZnO thin film nanostructures elaborated from colloidal chemistry and atomic layer deposition

CoFe(2)O(4)-TiO(2) and CoFe(2)O(4)-ZnO nanoparticles/film composites were prepared from directed assembly of colloidal CoFe(2)O(4) in a Langmuir-Blodgett monolayer and atomic layer deposition (ALD) of an oxide (TiO(2) or ZnO). The combination of these two methods permits the use of well-defined nanoparticles from colloidal chemistry, their assembly on a large scale, and the control over the interface between a ferrimagnetic material (CoFe(2)O(4)) and a semiconductor (TiO(2) or ZnO). Using this approach, architectures can be assembled with a precise control from the Angstrom scale (ALD) to the micrometer scale (Langmuir-Blodgett film). The resulting heterostructures present well-calibrated thicknesses. Electron microscopy and magnetic measurement studies give evidence that the size of the nanoparticles and their intrinsic magnetic properties are not altered by the various steps involved in the synthesis process. Therefore, the approach is suitable to obtain a layered composite with a quasi-monodisperse layer of ferrimagnetic nanoparticles embedded in an ultrathin film of semiconducting material.     

Superconducting coatings of MgB2 prepared by electrophoretic deposition

The electrophoretic deposition technique was applied for the production of MgB₂ superconducting coatings on various substrates, by using a suspension of MgB₂ superconducting powder in an organic solvent. The main parameters that affect the deposition rate of the process and the quality of the coatings produced, such as the initial concentration of the suspension, the applied voltage and the distance between the electrodes, were investigated and optimized. The coatings produced were characterized and investigated for possible interaction between the substrate and the deposited superconductor by X-ray diffraction. The superconducting properties were measured by magnetic susceptibility (superconducting quantum interference device).     

Efficient removal of organic pollutant by activation of persulfate with magnetic Co3O4/CoFe2O4 composite

In this study, magnetic spinel Co₃O₄/CoFe₂O₄ composite were synthesized by the mechanical mixing of both powdered pristine samples. Then the catalyst was characterized by TEM, SEM, XRD, BET, XPS and VSM measurement. Next, Co₃O₄/CoFe₂O₄ composite was applied to degrade rhodamine B (RhB) in water by activating persulfate. Results showed that Co₃O₄/CoFe₂O₄ composite exhibited high efficiency for removal of RhB, and 95.59% of it could be degraded in 45 min. Besides, the effects of parameters, such as initial pH, PS dosage, Co₃O₄/CoFe₂O₄ composite dosage, initial concentration of RhB and temperture were studied. Also, the effects of coexisting anions on RhB degradation were observed and explained. Furthermore, we conducted the quenching experiment and found that sulfate radical and hydroxyl radicals were the main active radicals in the degradation process. Finally, recycle experiments proved that Co₃O₄/CoFe₂O₄ had a good stability for RhB degradation. In short, Co₃O₄/CoFe₂O₄ composite is a promising catalyst for wastewater treatment.     

Anatase TiO2 porous thin films prepared by sol-gel method using CTAB surfactant

Anatase TiO₂ porous thin films were prepared on glass substrates by sol-gel method with Cetyltrimethylammonium Bromide (CTAB) as a pore-forming agent, Tetrabutylorthotitanate as Ti precursor, ethanol as solvent and diethanolamine as chelating agent respectively. IR, TG-DSC, XRD and SEM analyzed the chemical and physical changes during sol-gel process and characteristics of the films. Effects of the amount of CTAB, alkane and water on morphology of the films were discussed and the principle of forming porous structure was proposed. It was shown that the diameter of pores was changed in the range of 30–400 nm.     

Optical, electrical and dielectric properties of TiO2-SiO2 films prepared by a cost effective sol-gel process

Titanium dioxide (TiO(2)) and silicon dioxide (SiO(2)) thin films and their mixed films were synthesized by the sol-gel spin coating method using titanium tetra isopropoxide (TTIP) and tetra ethyl ortho silicate (TEOS) as the precursor materials for TiO(2) and SiO(2) respectively. The pure and composite films of TiO(2) and SiO(2) were deposited on glass and silicon substrates. The optical properties were studied for different compositions of TiO(2) and SiO(2) sols and the refractive index and optical band gap energies were estimated. MOS capacitors were fabricated using TiO(2) films on p-silicon (100) substrates. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics were studied and the electrical resistivity and dielectric constant were estimated for the films annealed at 200°C for their possible use in optoelectronic applications.     

Influence of temperature on the preparation of CoFe2O4 by the sol-gel method and its application in electrochemical energy storage

Journal of Solid State Electrochemistry - CoFe2O4 particles were successfully synthesized by a sol-gel proteic route in three different temperatures, and their structural and morphological...     

Photocatalytic degradation of azophloxine on porous La2Ti2O7 prepared by sol-gel method

Cetyltrimethyl ammonium bromide (CTAB) was used in a sol-gel route to synthesize porous lanthanum titanate. The materials are composed of perovskite La₂Ti₂O₇ in monoclinic system. The addition of CTAB does not cause phase transformation, but leads to a slight decreasing tendency of La₂Ti₂O₇ crystallite size. Both the pore volume and pore size distribution range are enlarged after using CTAB. The sample obtained with 4 g CTAB has the maximum BET specific surface area of 42.4 m²/g. When the amount of CTAB is less than 4 g, the increase in photocatalytic degradation efficiency is almost in linear relationship to the amount of CTAB. The reaction rate constants are 0.0032, 0.0116 and 0.0237 min⁻¹ on the La₂Ti₂O₇ samples obtained using 0, 2 and 4 g CTAB. The functional groups in azophloxine molecule are decomposed during photocatalytic oxidation with extending irradiation time.     

Preparation and characterization of CuAlO2 transparent thin films prepared by chemical solution deposition method

CuAlO₂ thin films were prepared on quartz glass and sapphire substrates by chemical solution deposition method using copper acetate monohydrate, aluminum nitrate nonahydrate and 2-methoxyethanol as starting precursor and solvent. The effects of annealing temperature on the structural, morphological, electrical and optical properties have been studied. Via the optimized annealing treatment condition, CuAlO₂ film annealed at 850 °C in nitrogen flow of 400sccm under atmosphere pressure exhibits the best performance with the lowest room temperature resistivity of 3.6 × 10² Ω cm and the highest optical transmission in the visible region (>70% at around 600 nm wavelength). CuAl₂O₄ and CuO phases, not CuAlO₂ phase are obtained when annealing temperature is lower than 850 °C. However, a further increase of annealing temperature weakens the crystallization quality and deteriorates the surface morphology of CuAlO₂ films as the annealing temperature exceeds 850 °C, leading to an increase in the resistivity and a decrease of the optical transmission in the visible region of CuAlO₂ films.     

Optical and transport phenomena in CdO:La films prepared by sol-gel method

A series of lightly La-doped CdO thin films (1%, 5%, and 7%) have been prepared by a spin coater sol-gel technique on amorphous glass and crystalline Si substrates. Those prepared films were studied by X-ray diffraction (XRD), UV-VIS-NIR absorption spectroscopy, and dc-electrical measurements. The investigation shows that La doping grows slightly the CdO lattice parameter and decreases the intrinsic energygap from 2.1 eV to 1.7 eV. The optical properties were easily explained in the framework of classical Drude theory and thus all the corresponding parameters were determined. The electrical behaviour of the samples shows that they are degenerate semiconductors until the atomic percentage of the La dopant was 7% then the sample was converted into a non-degenerate semiconductor. Generally, it was observed that the conductivity and mobility of the carriers were decreased by increasing the La content in the CdO film samples.     

Dielectric and piezoelectric properties of dense and porous PZT films prepared by sol-gel method

PZT films with different microstructure and Zr:Ti ratios were fabricated on ITO/glass and platinized silicon wafer substrates by dip-coating. A dense film of 2% porosity and a porous film of 19% porosity were obtained by repetition of thin and thick coatings, respectively. Development of pores during heating the film was examined and heating process factors were investigated. In the film fabricated on ITO/glass substrates, an existence of non-perovskite and low permittivity layer was confirmed by measurement of film thickness dependence of the dielectric constant. Among the films studied, the film with molar composition of Ti:Zr = 5:5 exhibited the largest dielectric constant and apparent piezoelectric coefficient, d ₃₃, though the values were small. Apparent piezoelectric coefficients of d ₃₃ and g ₃₃ of the porous films were larger than those of the dense films.     

Sn-substituted LiMn2O4 thin films prepared by RF magnetron sputtering

The spinel thin films of LiMn₂O₄ and LiSn_0.0125Mn_1.975O₄ prepared by RF magnetron sputtering were studied with focusing on structural and electrochemical properties. The LiSn_0.0125Mn_1.975O₄ thin films showed the superior properties, i.e., a high capacity retention of 94% at the current rate of 5 C after 90 cycles, due to the increase in Mn valence and the decrease in oxygen deficiency. The larger oxygen deficiency in undoped LiMn₂O₄ thin films was confirmed by the increased lattice volume and structural degeneration.     

RuO2/Co3O4 thin films prepared by spray pyrolysis technique for supercapacitors

RuO₂/Co₃O₄ thin films with different RuO₂ content were successfully prepared on fluorine-doped tin oxide coated glass plate substrates by spray pyrolysis method, and their capacitive behavior was investigated. Electrochemical property was performed by cyclic voltammetry, constant current charge/discharge, and electrochemical impedance spectra. The capacitive performance of RuO₂/Co₃O₄ thin films with different RuO₂ content corresponded to a contribution from a main pseudocapacitance and an additional electric double-layer capacitance. The specific capacitance of pure Co₃O₄, 15.5%, 35.6%, and 62.3% RuO₂ composites at the current density of 0.2 A g⁻¹ were 394 ± 8, 453 ± 9, 520 ± 10, and 690 ± 14 F g⁻¹, respectively; 62.3% RuO₂ composite presented the highest specific capacitance value at various current densities, whereas 35.6% RuO₂ composite exhibited not only the largest specific capacitance contribution from RuO₂ (C _sp ^RuO2) at the current density of 0.5, 1.0, 1.5, and 2.0 A g⁻¹ but also the highest specific capacitance retention ratio (46.3 ± 2.8%) at the current density ranging from 0.2 to 2.0 A g⁻¹. Electrochemical impedance spectra showed that the contact resistance dropped gradually with the decrease of RuO₂ content, and the charge-transfer resistance (R _ct) increased gradually with the decrease of RuO₂ content.