10.6 μm Infrared light photoinduced insulator-to-metal transition in vanadium dioxide

Vanadium dioxide has excellent phase transition characteristic. Before or after phase transition, its optical, electrical, magnetic characteristic hangs hugely. It has a wide application prospect in many areas. Now, the light which can make vanadium dioxide come to pass photoinduced phase transition range from soft X-ray to medium infrared light (6.9 μm, 180 meV). However, whether 10.6 μm (117 meV) long wave infrared light can make vanadium dioxide generate photoinduced phase transition has been not studied. In this paper, we researched the response characteristic of vanadium dioxide excited by 10.6 μm infrared light. We prepared the vanadium dioxide and test the changes of vanadium dioxide thin film’s transmittance to 632.8 nm infrared light when the thin film is irradiate by CO₂ laser. We also test the resistivity of vanadium dioxide. Excluding the effect of thermal induced phase transition, we find that the transmittance of vanadium dioxide thin film to 632.8 nm light and resistivity both changes when irradiating by 10.6 μm laser. This indicates that 10.6 μm infrared light can make the vanadium dioxide come to pass photoinduced phase transition. The finding makes vanadium has a potential application in recording the long-wave infrared hologram and making infrared detector with high resolution.     

Ho:LaF3 single crystal as potential material for 2 μm and 2.9 μm lasers

Optical properties of a Ho-doped LaF₃ single crystal have been detailed investigated as a promising material for 2 μm and 2.9 μm lasers for the first time. Judd–Ofelt theory was applied to analyze the absorption spectrum to determine the J–O intensity parameters Ω_t(t=2,4,6), based on which the emission probabilities, branching ratio and radiative lifetime for the as-grown crystal were all calculated. The stimulated emission cross-sections of the ⁵I₇ → ⁵I₈ and ⁵I₆ → ⁵I₇ transitions were obtained by using the Fuchtbauer–Ladenburg method. The gain cross-section for 2 μm emission becomes positive once the population inversion level reaches 30%. The Ho:LaF₃ crystal shows long fluorescence lifetime of ⁵I₇ manifold (25.81 ms) as well as ⁵I₆ manifold (10.37 ms) compared with other Ho³⁺-doped crystals. It can be proposed that the Ho:LaF₃ crystal may be a promising material for 2 μm and 2.9 μm laser applications.     

Infrared absorption cross sections for acetone (propanone) in the 3 μm region

Infrared absorption cross sections for acetone (propanone), CH₃C(O)CH₃, have been determined in the 3 μm spectral region from spectra recorded using a high-resolution FTIR spectrometer (Bruker IFS 125 HR) and a multipass cell with a maximum optical path length of 19.3 m. The spectra of mixtures of acetone with dry synthetic air were recorded at 0.015 cm⁻¹ resolution (calculated as 0.9/MOPD using the Bruker definition of resolution) at a number of temperatures and pressures (50-760 Torr and 195-296 K) appropriate for atmospheric conditions. Intensities were calibrated using three acetone spectra (recorded at 278, 293 and 323 K) taken from the Pacific Northwest National Laboratory (PNNL) IR database.     

1.55 μm silicon-based reflection-type waveguide-integrated thermo-optic 2 × 2 switch

In this work a waveguide-integrated 2 × 2 switch operating at the infrared communication wavelength of 1550 nm is proposed and theoretically discussed. The device is based on the total internal reflection (TIR) phenomenon and the thermo-optic effect (TOE) in hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). It takes advantage of a bandgap-engineered a-Si:H layer to explore the properties of an optical interface between materials showing similar refractive indexes but different thermo-optic coefficients. In particular, thanks to modern plasma-enhanced chemical vapour deposition (PECVD) techniques, the refractive index of the amorphous film can be properly tailored to match that of c-Si at a given temperature. TIR may be therefore achieved at the interface by acting on the temperature. The device is integrated in a 4 μm-wide and 3 μm-thick single-mode rib waveguide. The substrate is a silicon-on-insulator (SOI) wafer with an oxide thickness of 500 nm. We calculated an output crosstalk always better than 24 dB and insertion losses as low as 3.5 dB.     

Hard antireflective films of SiAlON for zinc sulfide in 3–5 μm regions

SiAlON films with antireflective and protective functionality for zinc sulfide were prepared by an ion beam sputtering method. A great transmittance improvement (at 3.8 μm) of 25.1% has been realized for zinc sulfide substrate. At the same time, the in situ high temperature transmittance was also recorded and it was proven that the SiAlON films on zinc sulfide window materials can keep thermal stability well at temperature as high as 250 °C in the region of 3–5 μm. The micro hardness of the zinc sulfide was improved by 75% in average after being coated with SiAlON films, and the SiAlON films possess good behaviors in harsh environmental tests including adhesion, abrasion, moisture, and thermal shock circle.     

The quest for ozone intensities in the 9–11 μm region: A retrospective

We review efforts to experimentally determine absolute line intensities for ozone transitions in the 9–11 μm spectral region over the last several decades. Much of this work has been driven by the requirements for remote sensing of terrestrial atmospheric ozone. While significant progress has been achieved, discrepancies persist among various infrared measurements, and the relation between infrared and ultraviolet standards is not clearly resolved.     

Investigation on Tm3+-doped silicate glass for 1.8 μm emission

A Tm³⁺-doped silicate glass (SiO₂–CaO–Na₂O–K₂O) with good thermal stability is prepared by the melt-quenching method. Intense 1.8 μm emission is obtained when pumped by an 808 nm laser diode. Based on the measured absorption spectra, radiative properties are predicted using Judd–Ofelt theory and Judd–Ofelt parameters Ω_λ (λ=2, 4, 6), as well as absorption and emission cross-sections are calculated and analyzed. The difference between the measured Tm³⁺:³F₄ lifetime and the calculated lifetime is also discussed. The emission property together with good thermal property indicates that Tm³⁺-doped silicate glass is a potential kind of laser glass for efficient 2 μm laser.     

Mid-wave QWIPs for the [3–4.2 μm] atmospheric window

We report two approaches using Quantum Well Infrared Photodetectors for detection in the [3–4.2 μm] atmospheric window. Taking advantage of the large band gap discontinuity we demonstrated a strained AlInAs/InGaAs heterostructure on InP. The optical coupling in this structure has been experimentally and numerically investigated. The results show that the coupling is mainly due to guided modes. The second approach is based on double barrier strained AlGaAs/AlAs/GaAs/InGaAs active layers on GaAs. The segregation of the elements III in these structures has been investigated using a transmission electron microscope. The results show a strong modification of the conduction band profile. We demonstrate peak wavelengths at 3.9 μm for the InP based detector and 4.0 μm for the GaAs based detector. We report a background limited peak detectivity (2π field of view, 300 K background) at 4.0 μm of about 2 × 10¹¹ cm Hz^1/2 W^?1 at 77 K, and 1.5 × 10¹¹ cm Hz^1/2 W^?1 at 100 K.     

Infrared absorption cross-sections for acetaldehyde (CH3CHO) in the 3 μm region

A series of infrared absorption cross-sections for acetaldehyde has been measured in the 3 μm region from spectra obtained using a high-resolution Fourier transform spectrometer (Bruker IFS 125/HR). Results presented are for mixtures of acetaldehyde vapor combined with pure synthetic air taken at various temperatures and pressure to simulate atmospheric conditions found principally in the Earth's troposphere and lower stratosphere. Spectra were recorded at a resolution of 0.005 cm⁻¹ and intensities were calibrated using three acetaldehyde spectra (measured at 278, 298 and 323 K) provided by the Pacific Northwest National Laboratory (PNNL) IR database.     

GaSb-based mid-infrared 2–5 μm laser diodes

Laser diodes emitting at room temperature in continuous wave regime (CW) in the mid-infrared (2–5 μm spectral domain) are needed for applications such as high sensitivity gas analysis by tunable diode laser absorption spectroscopy (TDLAS) and environmental monitoring. Such semiconductor devices do not exist today, with the exception of type-I GaInAsSb/AlGaAsSb quantum well laser diodes which show excellent room temperature performance, but only in the 2.0–2.6 μm wavelength range. Beyond 2.6 μm, type-II GaInAsSb/GaSb QW lasers, type-III ‘W’ InAs/GaInSb lasers, and interband quantum cascade lasers employing the InAs/Ga(In)Sb/AlSb system, all based on GaSb substrate, are competitive technologies to reach the goal of room temperature CW operation. These different technologies are discussed in this paper. To cite this article: A. Joullié, P. Christol, C. R. Physique 4 (2003).     

Metamorphic InGaAs Quantum Well Laser Diodes at 1.5μm on GaAs Grown by Molecular Beam Epitaxy

We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm^2 ridge waveguide laser, the lazing wavelength is centred at 1.508 μm and the threshold current density is 667 A/cm^2 under pulsed operation. The pulsed lasers can operate up to 286 K.     

Distinction investigation of InGaAs photodetectors cutoff at 2.9 μm

Using double heterojunction structure with linearly graded In_xAl_1–xAs as buffer layer and In_0.9Al_0.1As as cap layer, wavelength extended In_0.9Ga_0.1As detectors with cutoff wavelength of 2.88 μm at room temperature have been grown by using gas source molecular beam epitaxy, their characteristics have been investigated in detail and compared with the detectors cutoff at 2.4 μm with similar structure as well as commercial InAs detectors. Typical resistance area product R₀A of the detectors reaches 3.2 Ω cm² at 290 K. Measured peak detectivity reaches 6.6E9 cm Hz^1/2/W at room temperature.     

Tunnelling-Induced Transient Gain in an Asymmetric Double Quantum Well

We investigate the transient behaviour of a weak probe in asymmetric double quantum well structures, where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. There is no external coherent coupling field applied, and we find that probe gain can be achieved during the transient process, which is induced by the coherent coupling of the upper states via the resonant tunnelling. We show that the transient behaviour of the probe depends on the coupling strength and the dephasing rate and can be tuned by changing the width of the tunnelling barrier.     

Microscopic Many-Body Effects on Intersubband Resonance in Quantum Well

Considering the Coulomb many-body interactions, we investigate the intersubband optical processes of the quantum well by using the semiconductor Bloch equations. We calculate the evolution of intersubband absorption spectral line shape as a function of lattice temperature and electron density. It is found that the coupling of intersubband plasmons can reduce and red-shift the lower energy resonance, simultaneously enhance and blue-shift the higher energy resonance. The dependence of cascading resonances on temperature and electron density is also discussed.     

Investigation on different ESD protection strategies devoted to 3.3 V RF applications (2 GHz) in a 0.18 μm CMOS process

ESD protection for radio frequency (RF) applications must deal with good ESD performance, minimum capacitance, zero series resistance and good capacitance linearity. In order to fulfill these requirements, different ESD protection strategies for RF applications have been investigated in a 0.18 μm CMOS process. This paper compares different ESD protection devices and shows that a suitable ESD performance target for RF applications (200 fF max, 2 kV HBM) can be reached with a diode network scheme. The optimization of the diodes is then a key point which is detailed. A trade-off has to be found between the ESD performance, the voltage drop during ESD and the parasitic capacitance. Poly as well as shallow trench isolation (STI) bounded diodes have been studied and it appears clearly that a solution based on poly bounded diodes is the best choice.     

Enhanced 2.0 μm emission in Ho3+/Yb3+ co-doped silica-germanate glass

A detailed investigation on thermal and spectroscopic properties of different Ho³⁺/Yb³⁺ concentration ratios in silica-germanate glasses is displayed. According to the measurement of thermal properties, the host glass possesses high transition temperature (585 °C) as well as the large ΔT(155 °C). The 2.0 μm fluorescence can be obtained from all the samples. Maximum stimulated emission cross-section of around 2.0 μm is 0.56 × 10⁻²⁰ cm² of Ho³⁺ as calculated by McCumber theory. Besides, the underlying mechanism is analyzed by means of fluorescence spectra. Thus, desirable thermal properties and spectroscopic characteristics of Ho³⁺/Yb³⁺ co-doped silica-germanate glass is a promising material in 2.0 μm emission.     

InGaAsP/InP photodetectors targeting on 1.06 μm wavelength detection

InP-based InGaAsP photodetectors targeting on 1.06 μm wavelength detection have been grown by gas source molecular beam epitaxy and demonstrated. For the detector with 200 μm mesa diameter, the dark current at 10 mV reverse bias and R₀A are 8.89 pA (2.2 × 10⁻⁸ A/cm²) and 3.9 × 10⁵ Ω cm² at room temperature. The responsivity and detectivity of the InGaAsP detector are 0.30 A/W and 1.45 × 10¹² cm Hz^1/2 W⁻¹ at 1.06 μm wavelength. Comparing to the reference In_0.53Ga_0.47As detector, the dark current of this InGaAsP detector is about 570 times lower and the detectivity is more than ten times higher, which agrees well with the theoretical estimation.