Localized luminescence in ZnO: Mn ceramics

Experimental conditions leading to the appearance of a Mn-related green emission band in ZnO ceramics are investigated. The emission has been found to be associated with the presence of small luminescent particles in the matrix.     

Effect of point defects on luminescence characteristics of ZnO ceramics

Photo- and thermally stimulated luminescence of ZnO ceramics are produced by uniaxial hot pressing. The luminescence spectra of ceramics contain a wide band with a maximum at 500 nm, for which oxygen vacancies V_O are responsible, and a narrow band with a maximum at 385 nm, which is of exciton nature. It follows from luminescence excitation spectra that the exciton energy is transferred to luminescence centers in ZnO. An analysis of the thermally stimulated luminescence curves allowed detection of a set of discrete levels of point defects with activation energies of 25, 45, 510, 590 meV, and defects with continuous energy distributions in the range of 50–100 meV. The parameters of some of the detected defects are characteristic of a lithium impurity and hydrogen centers. The photoluminescence kinetics are studied in a wide temperature range.     

Surface luminescence in ZnO nanoparticles

Spectral and time-resolved photoluminescence (TRPL) measurements were performed on ZnO nanoparticles of different sizes (17-300 nm). Under a low photon energy excitation of 2.33 eV, the time-integrated PL spectra (TIPL) clearly exhibit broad emission in the range of 1.2-2.3 eV. Upon increase of the particle size, a red-shift in the PL peak position was observed. Gaussian analysis indicates that this red-shift corresponds to the increased relative magnitude of the Gaussian combination in the low energy region. In addition, TRPL demonstrates a clear relationship between the particle diameters and the PL decay times. The shortening of the PL lifetime could be explained by a surface states model.     

Unipolar characteristics of ZnO ceramics

The paper presents research on unipolar characteristics of ZnO ceramics. Dielectric response analysis is generally known method to characterize electrical properties of materials. It becomes important method for non-destructive testing. Recently, the possibilities and limitations of this method to reflect the deterioration processes due to thermal and electrical stress were investigated. The method is based on measuring the conduction and dielectric or polarization response. Present investigations are bringing extension to this research by high-energy pulse loading of samples that are used e.g. in production of gapless overvoltage protections. Moreover, the variations of characteristics due to pulse energy stress of samples are investigated.     

Characterization of enhanced emission from excimer laser treated ZnO ceramics using one- and two-photon luminescence spectroscopy and microscopy

The effects of excimer laser irradiation on the surface structure and luminescence of sintered ZnO ceramics were investigated. Photoluminescence spectra of three materials (as-prepared ZnO ceramic, the ceramic blackened by high-energy irradiation and the recovered ceramic treated using lower-energy irradiation) were compared in the visible region at room temperature and 10 K. Each material exhibited a green luminescence band but the blackened ZnO ceramics had the strongest emission in the visible region while the recovered ceramics had significantly shorter decay times.     

Localised transitions in luminescence of AlN ceramics

The photoluminescence (PL) and thermoluminescence (TL) properties of AlN ceramics revealed under UV irradiation are determined mainly by oxygen-related centres, giving rise to the UV (around 3.18 eV) and the Blue (2.58 eV) bands. It was found that the UV irradiation-generated donor–acceptor pairs (DAPs), responsible for the UV emission band, are randomly distributed with regard to separation distance. Luminescence properties of AlN are interpreted basing on the model of localised recombination involving electron tunnel transitions from the excited state of D to the ground state of A, proposed by Jain et al. (2012). The observed features of PL, afterglow and TL of AlN ceramics are explained by dependence of tunnelling recombination probability on separation distance between D and A implied by the used model.     

Cathodoluminescence from deformed ZnO ceramics

Cathodoluminescence of deformed ZnO ceramics is studied in a scanning electron microscope based cathodoluminescence measurement system. Mechanical damage of the surface produces the decrease of the CL emission and a shift of the emission peak to higher wavelengths. The possible influence of oxygen vacancies on the observed effects is discussed.     

纳米ZnO和ZnO∶Eu3+的表面效应及发光特性

纳米ZnO, ZnO:Eu3+及其添加覆盖层样品的光谱性质表明,表面有机物覆盖层具有改善发射光谱, 增强基质与Eu3+间能量传递的良好效果. 通过比较不同温度(60,800℃)处理的ZnO:Eu3+发光强度, 发现了小尺度(纳米)颗粒的特殊发光行为.     

ZnO压敏陶瓷的介电谱

在-160℃-200℃温度范围内、0.1 Hz-0.1 MHz频率范围内测量了 ZnO压敏陶瓷的介电频谱, 发现可以采用电导率谱低频端的类直流特性来表征晶界Schottky势垒的电子输运过程, 获得的Schottky势垒高度为0.77 eV. 基于背靠背双Schottky势垒模型, 提出当存在直流偏压时, 势垒高度将随直流偏压线性增大. 基于此势垒模型计算了ZnO压敏陶瓷单晶界的直流偏压大小, 进而计算出晶粒平均尺寸为6.8 μm, 该理论值与通过扫描电子显微镜断面照片获得的测量值的偏差在5%以内. 可见采用介电谱不但可以获得势垒高度实现电气性能的表征, 还能获得晶粒尺寸实现显微结构的表征.     

Thermally stimulated luminescence of Mg-doped ZnO Nanophosphors

Nanosized ZnO:Mg phosphors were synthesized through a controlled chemical reaction. X-ray diffraction patterns confirmed that Mg entered in a substitutive way in Zn sites. To investigate their thermoluminescence (TL) properties, some samples were exposed to beta-particle irradiation. The results reported here show that Mg doping improves ZnO TL features that are important for TL dosimetry applications, such as the shape of the glow curve, the temperature at which the maximum TL intensity is observed, and the TL fading and reproducibility. No saturation clues of the TL response as a function of the dose is observed for doses below 1600 Gy.     

The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD

ZnO film was firstly prepared by PA-MOCVD method on the substrate pre-coated with GaAs interlayer. Hall measurement found that the GaAs interlayer had important effects on the electrical behavior of the ZnO film. It could make the ZnO film convert to p-type conductivity. The XPS results confirmed that the acceptor was arsenic. And the acceptor level was 130 meV above the ZnO valence band maximum. Low-temperature PL measurement was introduced to investigate the optical properties of both as-grown n-type and arsenic doped p-type ZnO films. Then, based on this technology, ZnO homojunction light emitting device (LED) was fabricated with arsenic doped p-type ZnO and unintentionally doped n-type ZnO on GaAs/p⁺-Si substrate. Its current-voltage (I-V) character showed a typical rectification behavior, which was different from the n-ZnO/p⁺-Si structure. The UV-visible (385-580 nm) electroluminescence was detected under relatively low current injection condition from the n-ZnO/p-ZnO/p⁺-Si LED.     

Temperature-dependent luminescence dynamics for ZnO thin films

The paper presents the photoluminescence investigation of zinc oxide thin films. A high quality ZnO films fabricated by dip-coating (sol–gel) method were grown on quartz wafers. The films with different thickness (number of layers) were annealed at different temperatures after the preparation process. It was found that high quality, transparent ZnO thin films could be produced on quartz substrates at relatively low annealing temperature (450–550  $^{\circ }\mathrm{C}$ ). The dependence of the ZnO thin film quality was studied by X-ray diffraction and atomic force microscopy techniques. Optical properties were investigated by classic and time-resolved photoluminescence (TRPL) measurements. Photoluminescence spectra allowed us to estimate energy of the free excitons, bond excitons and their longitudinal optical (LO) phonon replicas as a function of the annealing temperature. An innovative TRPL technique let us precisely measure the decay time of the free- and bond excitons’ in the real time. TRPL measurements as a function of temperature reveal a biexponential decay behavior with typical free/bound exciton decay constants of 970/5310 ps for the as-grown sample and 1380/5980 ps after annealing process. Presented spectra confirm high structural and optical quality of investigated films. We proved that the thermal treatment improve both optical and structural quality and extend the photoluminescence’s lifetimes. The obtained experimental results are important for identification of exciton’s peaks and their LO phonon replicas for the investigated ZnO films.     

氧化锌纳米颗粒薄膜的近紫外电致发光特性研究

利用溶胶-凝胶法(sol-gel method)制备了ZnO纳米颗粒薄膜(ZnO nanoparticle film),并以此为发光层制备了结构为ITO/ZnO nanoparticle/MEH-PPV/LiF/Al的电致发光器件.通过调整器件发光层厚度,对器件的发光光谱和电学特性进行测试研究,发现该器件在一定的直流电压下可以得到以ZnO近紫外(中心波长390 nm)发光为主的电致发光光谱,显示出较好的ZnO近紫外电致发光特性.对该器件的发光机理进行了一定的研究,认为该器件的发光是基于载流子隧穿.     

Bound exciton luminescence of Ar- and Al-implanted ZnO

Argon- and aluminum-implanted ZnO single crystals (N_impl=10¹⁶?10¹⁹cm^?3) were investigated at liquid helium temperature by photoluminescence. We obtained highly resolved emission spectra of implanted and thermally annealed samples. Maximum luminescence yield was achieved after annealing with an oxygen ambient at 800°C and an anneal time of 30 min. In Al-implanted ZnO crystals, we observed a strong emission line $\text{I}{}_{\mathrm{<mtext>5</mtext><mtext>6</mtext>}}\text{at λ = 3688}\text{A}\text{?}$. The intensity of this line is correlated with the implanted Al concentration. The I_{$\text{5}\text{6}$} line is interpreted as the recombination of a bound exciton at a polycentric Al complex.     

Catalyst-free synthesis and luminescence of aligned ZnO nanorods

Quasi-aligned undoped ZnO nanorods with diameter in the range 100–300 nm and length of several micrometers have been grown catalyst-free on Si(1 0 0) wafer in a one-step process by direct heating of Zn powders. All nanowires are single crystals and are aligned vertically to the substrate surface with c-axis preferred orientation. XRD, HRTEM and Raman studies revealed that the ZnO nanorods have wurtzite phase, are highly crystalline and well aligned with the lattice parameters a=0.32 nm and c=0.52 nm. The PL spectra measured at different temperatures are dominated by excitonic emission at 380 nm and less intense below band gap emission band centered at 520 nm.     

Morphology-dependent upconversion luminescence of ZnO:Er nanocrystals

Morphology impact on the upconverted luminescence of ZnO:Er³⁺ nanocrystals was studied with controllable morphology of nanorod, prickly sphere-like, column-like, branch rod, prism-like, and grain-like, prepared via the cetyltrimethylammonium bromide (CTAB)-assisted hydrothermal process. The upconversion emission of Er³⁺ with 980 nm excitation demonstrated morphology sensitivity which was related with the local environments of Er³⁺ ions in ZnO and doping efficiency. Under ultraviolet (UV) direct excitation, where exciton and defect emissions of ZnO appeared, morphology sensitivity was discussed in terms of surface-to-volume ratios.     

High efficiency white luminescence of alumina doped ZnO

The application of alumina-doped ZnO (AZO) films as luminescent material for large area lighting sources has been evaluated. Thin films were grown on quartz using magnetron sputtering and subsequently annealed under argon atmosphere in a rapid thermal annealing experiment. Below 550 °C, red-shift of the optical band gap and increase of the visible emission are observed in agreement with Al diffusion and formation of interstitial oxygen atoms. At temperatures higher than 800 °C, diffusion is activated and Ostwald ripening leads to the formation of larger grains and an increase of the crystalline phase. The photoluminescence (PL) intensity is enhanced, specifically in the UV range. As a result the emission spectrum of AZO thin films can be adjusted by the annealing conditions, with equal contributions from the UV and orange parts of the PL spectrum resulting in an efficient white emission as quantified using the color space map of the Commission Internationale de l'Éclairage.     

Raman scattering and luminescence of yttria nanopowders and ceramics

We have studied Raman scattering in yttria nanopowders and ceramics that was excited by radiation at wavelengths of 514.5 and 632.8 nm. We show that, in undoped nanopowders and cubic phase of doped yttria ceramics, only the Raman scattering by phonons is observed, with no other Raman scattering centers having been revealed. In nanopowders of the monoclinic phase, we have observed an additional Raman line with a Raman shift of 1093 ± 4 cm^?1. If all the objects under investigation are excited by the radiation at a wavelength of 514.5 nm, their spectra exhibit four series of photoluminescence lines, two of which (at λ = 521–523 and 538–564 nm) are emitted by Er³⁺ ions, “impurity” dopants, while the other two lines (at λ = 607–635 and 644–684 nm) are emitted by intrinsic centers. Under excitation by the radiation at a wavelength of 632.8 nm, only a series of bands at λ = 644–684 nm is emitted. In addition to these photoluminescence bands, neodymium-doped ceramics show photoluminescence bands of Nd³⁺ ions. We have shown that intrinsic luminescence centers, which occur in all the examined specimens, are capable of acting as acceptors with respect to neodymium ions excited to the upper laser level.