Structure,chemical bonding,and 45Sc solid state NMR of Sc2RuSi2

The silicide Sc₂RuSi₂ was synthesized from the elements by arc-melting. The structure was refined on the basis of single crystal X-ray diffractometer data: Zr₂CoSi₂ type, C2/m, a = 1004.7 (2), b = 406.8 (1), c = 946.6 (2) pm, β = 117.95 (2), wR2 = 0.0230, 743 F² values, and 32 variables. The structure consists of a rigid three-dimensional [RuSi₂] network in which the two crystallographically independent scandium atoms fill larger cages of coordination numbers 16 and 15, respectively. The [RuSi₂] network shows short Ru–Si distances (234–247 pm) and two different Si₂ pairs: Si1–Si1 at 247 and Si2–Si2 at 243 pm. Each silicon atom has trigonal prismatic Sc₆ (for Si2) or Sc₄Ru₂ (for Si1) coordination. These building units are condensed via common edges and faces. The various Sc–Sc distances between the prisms range from 327 to 361 pm. From electronic structure investigation within DFT, chemical bonding shows a major role of Ru–Si bonding and the presence of strong electron localization around Si–Si pairs pointing to a polyanionic silicide network [RuSi₂]^δ?. The ⁴⁵Sc MAS-NMR spectra recorded at 11.7 and 9.4 T clearly resolve the two distinct scandium sites. The large electric field gradients present at both scandium sites result in typical line shapes arising from second-order quadrupole perturbation effects.     

Characterization of various crystalline structures at the SiO2/Si interface by positrons

The nature of the interface of the Si (0 0 1) surface with grown, native oxide is examined by a slow-positron beam equipped with coincidence Doppler broadening (DB). Measurements are combined with theoretical calculations of high-momentum DB profiles of Si, divacancy in Si, Brazilian quartz and the interface itself. From this comparison, the conclusion is drawn that an ordered structure exists at the interface. This structure resembles low quartz or a SiO₂ structure with a lower density than low quartz.     

Computational simulations of pore nucleation in silicon(1 1 1)

Float zone n-Si(1 1 1) was electrochemically etched in diluted NH₄F to form porous nuclei. The experimental results were compared with computational simulations of pore nucleation and growth. Electrochemical etching of silicon(1 1 1) results in pore nucleation preferentially localized on the edges of atomic terraces. The initial pore nuclei have diameter and depth of 17 nm and 0.3 nm, respectively. We find a correlation between H-terminated Si(1 1 1) atomic surface morphology and electric field distribution on pore nucleation and growth mechanism. The H-terminated surface is composed from wide (100–200 nm) atomic terraces with steps of 0.3 nm height. Electric field enhancement occurs at the terrace edges leading to focusing the holes trajectories. This leads to weakening of the Si–Si backbonds resulting in easy atom removing. The maximum electric field was observed at terrace edges and at the semispherical pore bottom.     

Synthesis and characterization of high surface area TiO2/SiO2 mesostructured nanocomposite

Recently titania synthesis was reported using various structuration procedures, leading to the production of solid presenting high surface area but exhibiting moderate thermal stability. The study presents the synthesis of TiO₂/SiO₂ nanocomposites, a solid that can advantageously replace bulk titania samples as catalyst support. The silica host support used for the synthesis of the nanocomposite is a SBA-15 type silica, having a well-defined 2D hexagonal pore structure and a large pore size. The control of the impregnation media is important to obtain dispersed titania crystals into the porosity, the best results have been obtained using an impregnation in an excess of solvent. After calcination at low temperature (400 °C), nanocomposites having titania nanodomains (～2–3 nm) located inside the pores and no external aggregates visible are obtained. This nanocomposite exhibits high specific surface area (close to that of the silica host support, even with a titania loading of 55 wt.%) and a narrow pore size distribution. Surprisingly, the increase in calcination temperature up to 800 °C does not allow to detect the anatase to rutile transition. Even at 800 °C, the hexagonal mesoporous structure of the silica support is maintained, and the anatase crystal domain size is evaluated at ～10 nm, a size close to that of the silica host support porosity (8.4 nm). Comparison of their physical properties with the results presented in literature for bulk samples evidenced that these TiO₂/SiO₂ solids are promising in term of thermal stability.     

Study on thermal decomposition processes of polysiloxane polymers—From polymer to nanosized silicon carbide

The objective of this study is to determine experimentally the usefulness of different polysiloxanes as precursors for bulk ceramic products. Such resins are an alternative for currently commercially used polycarbosilanes. Four types of polysiloxanes were used. The polymers differed in C/Si molar ratio. Thermogravimetric measurements of polymers were made to determine curing and heat treatment conditions. Ceramic yield (Y_c) after heat treatment over the temperature range from 20 to 1700 °C was determined. Structure, microstructure and phase composition of ceramic products obtained from the polymers were investigated. It was found that during thermal decomposition of polymers in the temperature range from 20 to 1000 °C amorphous inorganic Si–C–O ceramics were formed. When the temperature exceeded 1500 °C nanosized 3C and 2H types of silicon carbide crystallized from the resin precursors with C/Si molar ratio higher than 1. On the contrary, heat treatment of polymer with C/Si molar ratio close to 1 did not lead to the formation of nanocrystalline silicon carbide.     

Amorphous silicon thin films as a high capacity anodes for Li-ion batteries in ionic liquid electrolytes

High lithiation capacity at low red-ox potentials in combination with good safety characteristics makes amorphous Si as a very promising anode material for rechargeable Li batteries.Thin film silicon electrodes were prepared by DC magnetron sputtering of silicon on stainless steel substrates. Their behavior as Li insertion/extraction electrodes was studied by voltammetry and chronopotentiometry at room temperature in the ionic liquid (IL) 1-methyl-1-propylpiperidinium bis(trifluoromethylsuphonil)imide containing 1 M Li bis(trifluoromethylsuphonil)imide. Li/Si cells containing this electrolyte showed good performance with a stable Si electrodes capacity of about 3000 mA h g⁻¹ and a relatively low irreversible capacity. Preliminary results on cycling Si–LiCoO₂ cells using this IL electrolyte are also presented.     

3D patterning of silicon by contact etching with anodically biased nanoporous gold electrodes

A novel strategy to achieve 3D pattern transfer into silicon in a single step without using lithography is presented. Etching is performed electrochemically in HF media by contacting silicon with a positively biased, patterned, metal electrode. Dissolution is localized at the Si/metal contacts and patterning is obtained as the electrode digs into the substrate. Previous attempts at imprinting Si using bulk metal electrodes have been limited by electrolyte blockage. Here, the problem is solved by using, for the first time, a nanoporous metal electrode that allows the electrolyte to access the entire Si/metal interface, irrespective of the electrode dimensions. As a proof of concept, imprinting of well-defined arrays of inverted pyramids has been performed with sub-micrometer spatial resolution over 1 mm² using a nanoporous gold electrode of the complementary shape. Under a polarization of + 0.3 V/SME in 5 M HF, the etch rate is ~ 0.5 μm min^− 1. The pyramidal pattern is imprinted independently of the Si crystallographic orientation. This maskless imprinting technique opens new opportunities in the fabrication of Si microstructures.     

A novel controllable synthesis of silica nanotube arrays with ultraviolet photoluminescence

The synthesis of large-scale one-dimensional silica nanotube (SNT) arrays embedded in Si substrate is demonstrated by using the combination of AAO template mask and Ar ion milling technique. The geometry of the SNTs could be precisely controlled by the process parameters, which included that the SNT diameter and the interpore distance were controlled by AAO anodization voltage and H₃PO₄ pore widening time, while the length of SNT was controlled by ion milling time and AAO aspect ratio. Also, the SNT fabrication parameters could be related to their photoluminescence (PL) emitting properties, when anodized at 40 V, pore widening in H₃PO₄ acid for 70 min and ion milled for 5 min, a strong intensity and stable ultraviolet (UV) light of 3.25 eV (381 nm) emitted from the SNTs under the excitation of 266 nm laser, which could be assumed arising from twofold coordinated silicon lone pair centers in the oxygen deficiency SNTs. The present fabrication of SNT arrays presents a novel method for intensity and frequency adjustable ultraviolet optoelectronic devices.     

Carbon based Si- and Cr-containing thin films: Chemical and nanomechanical properties

Si- and Cr-containing C films were deposited by magnetron sputtering combined with CVD onto silicon wafers. The composition and chemical structure were characterized by X-ray Photoelectron Spectroscopy (XPS) and nanomechanical properties by depth-sensing hardness and scratch techniques.The incorporated Si and Cr are preferentially bonded to carbon, in accordance with simplified thermodynamic calculations and as manifested by the XPS chemical shifts. At relatively high Cr- and low Si-content silicides (Cr_xSi) may also form as indicated by X-ray induced Auger electron spectroscopy. The chromium content in the C–Si–Cr films varied between 1 and 55 at% while the silicon content in the same films between 25 and 0 at%. For comparison two-component films of Si–C and Cr–C were also deposited with Si-content up to 42 at% and Cr-content up to 55 at% by varying the input power of the magnetrons.The nanohardness (H) and reduced modulus (E) were higher for all the films than that of the silicon substrate being 10 GPa, 127 GPa, respectively. Interestingly, the H and E of the three-component CrSiC films were almost invariant of the changes of the components' concentration within the indicated range and varied between 13–16 GPa and 120–140 GPa. H and E values for the two-component Cr–C films were much higher, reaching about 22 GPa and 170 GPa, respectively.     

Electronic structure of the Au–Si(1 1 1) interface as a function of Au coverage

We have investigated the Au–Si(1 1 1) interface as a function of the Au coverage by the core-level photoemission spectroscopy. With increasing the Au coverage, the spectral features in the Si 2p core-level changed remarkably and some fine structures in both Si 2p and Au 4f spectra were observed. Based on the curve fitting analysis, the Si 2p and Au 4f spectra at more than 20 Å Au coverage were decomposed into three chemically different components, respectively. The assignments of their components were performed. In addition, we have compared these results for the Au–Si(1 1 1) interface with our previous study for the Au–Si(1 0 0) interface. It was found that the electronic structures for the Au–Si(1 1 1) interface is essentially identical to those of the Au–Si(1 0 0) interface except at the initial Au deposition.     

Cubic-BN nanocrystals synthesis by pulsed laser induced liquid–solid interfacial reaction

Cubic boron nitride (c-BN) nanocrystals have been synthesized by pulsed laser induced liquid–solid interfacial reaction. It is shown that the diameters of the prepared quasi-spherical c-BN nanocrystals vary from 30 to 80 nm via transmission electron microscopy (TEM). The 2θ values of the X-ray diffraction (XRD) peaks of the resultant c-BN nanocrystals are 43.16°, 74.16°, 90.08° and 136.1°, respectively, corresponding to the (1 1 1), (2 2 0), (3 1 1) and (3 3 1) crystalline planes of a c-BN phase. Fourier transform infrared (FTIR) spectroscopy has also been used to characterize the structure of boron nitride. The formation of c-BN nanocrystals upon pulsed laser ablation at the liquid–solid interface is discussed in detail.     

Interdispersed silicon–carbon nanocomposites and their application as anode materials for lithium-ion batteries

As an anode material for lithium-ion batteries (LIBs), silicon offers among the highest theoretical storage capacity, but is known to suffer from large structural changes and capacity fading during electrochemical cycling. Nanocomposites of silicon with carbon provide a potential material platform for resolving this problem. We report a spray-pyrolysis approach for synthesizing amorphous silicon–carbon nanocomposites from organic silane precursors. Elemental mapping shows that the amorphous silicon is uniformly dispersed in the carbon matrix. When evaluated as anode materials in LIBs, the materials exhibit highly, stable performance and excellent Coulombic efficiency for more than 150 charge discharge cycles at a charging rate of 1 A/g. Post-mortem analysis indicates that the structure of the Si–C composite is retained after extended electrochemical cycling, confirming the hypothesis that better mechanical buffering is obtained when amorphous Si is embedded in a carbon matrix.     

Si–AB5 composites as anode materials for lithium ion batteries

The Si–AB₅ (MmNi_3.6Co_0.7Al_0.3Mn_0.4 alloy) composites with a high tap density as anode materials for lithium-ion batteries were synthesized by ball-milling. Si nanoparticles are distributed homogeneously on the surface of the AB₅ matrix. The electrochemical performance of the Si–AB₅ composites as a function of Si content was investigated. It is demonstrated that the Si–AB₅ composite delivers a larger reversible capacity and better cycle ability because the inactive AB₅ alloy can accommodate the large volume changes of Si nanoparticles distributed on the surface of the Si–AB₅ composite during cycling. In particular, the Si–AB₅ composite containing 20 wt% Si with the high tap density of 2.8 g/cm³ obtained after ball-milling for 11 h exhibits an initial and maximum reversible (charge) capacity of 370 and 385 mAh/g. The high capacity retention can be achieved after 50 cycles in the potential range from 0.02 to 1.5 V.     

Annealing effects on the morphology and luminescence of cubic boron nitride based ceramics

Cubic boron nitride based ceramics with silicon were sintered at 1350 °C under a pressure of 5.0 GPa. The effects of post-annealing on grain morphology, surface morphology, and photoluminescence of Si–cBN ceramics were investigated by scanning electron microscope and room temperature photoluminescence measurements. The results showed that the annealing treatment had great influence on cBN grain morphology, rather than the surface morphology. The luminescence intensity increased with annealing temperature and annealing time. The void-net structure formed by continuous distribution of SiO_x particulate on the ceramic surface resulted in the emission band peaking at about 701.2 nm, and the tense passivation of Si by SiO_x led to the peak's low intensity. The near ultraviolet emission band peaking at about 317 nm was attributed to the oxygen vacancies formed in cBN grain surface, caused by the scavenging of oxygen from the cBN grain surface by the added Si.     

Synthesis of silicon–nitrogen derivatives in quasi-interstellar conditions

At 2–4·10^–5 T, a silicon wafer is the target of a 5–10 keV molecular beam of dinitrogen. The products are extracted by an electric field, and analysed by mass. The ions of this primary spectrum are dissociated in a Kr collision chamber. From the fragments thus obtained, one deduces compositions for the secondary ions, and therefore for the primary products. This is helped by the presence, in silicon, of the isotopes ²⁸Si, ²⁹Si and ³⁰Si. Beside the clusters Si_n (n = 1–7), complex molecular species are thus obtained, such as Si₅N₄⁺, Si₅N₄H⁺, Si₅N₄H₂⁺. © 2000 Académie des sciences / Éditions scientifiques et médicales Elsevier SASinterstellar dust / interstellar molecules / atomic impact / silicon / nitrogen derivatives     

Vanadium oxide-porous phosphate heterostructure catalysts for the selective oxidation of H2S to sulphur

Vanadium oxide–containing mesoporous materials, based on a surfactant expanded zirconium phosphate with silica galleries into the interlayer space, named porous phosphate heterostructure (PPH), were prepared by using TEOS and vanadium oxytripropoxide in n-propanol as sources of Si and V, respectively; with different Si/V molar ratios of 1, 2, 5 and 25; and calcining at 550 °C for 6 h. Using this method, vanadium can be partially incorporated to the structure of the gallery, but the surface area strongly decreases and the appearance of V₂O₅ crystallites increases when increasing the vanadium content. The catalysts were characterized by XRD, XPS, TEM, and Raman, and tested in the selective catalytic oxidation of H₂S using a fixed bed reactor, at atmospheric pressure, at 180–260 °C. The catalysts with high contents of vanadium are very active at 200 °C, showing H₂S conversions of 85–99%, with a high selectivity to elemental sulphur and with a low formation of SO₂. Accordingly V₂O₅ crystallites can be proposed as active and selective although the catalytic behavior is related to the number of accessible V-sites in the surface of the catalyst.     

Theoretical study on the stability and electronic property of Ag2SnO3

Bulk crystal properties of Ag₂SnO₃ were investigated with the advantage of density functional theory. The whole structure has layered feature: hexagonal metallic planes formed by Ag atoms and distorted octahedrons of SnO₆ clusters are configured alternatively along c axis of hexagonal cell. The cohesive energy is about ?2.792 eV/atom, which is less than SnO₂. The Debye temperature of Ag₂SnO₃ is about 231.6 K, and the bulk and shear moduli are 62.13 and 20.63 GPa, respectively. Band structure and DOS show the compound has a small pseudo-band gap value of 1.0 eV and so may be a semiconductor. When checking the PDOS intensity at the Fermi surface of Ag atoms, a weak metallic character can be seen. The distortion mechanism becomes less effective to reduce the total orbital energy both in SnO₂ and in Ag₂SnO₃ and as a result the bond lengths of Sn–O are intended to be isotropy.     

Intramolecularly donor-stabilized silenes: Part 6. The synthesis of 1-[2,6-bis(dimethylaminomethyl)phenyl]silenes and their reaction with aromatic aldehydes

The intramolecularly donor-stabilized silenes ArR¹SiC(SiMe₃)₂ (3a–d) (3a: R¹ = Me; 3b: R¹ = t-Bu; 3c: R¹ = Ph; 3d: R¹ = SiMe₃; Ar = 2,6-(Me₂NCH₂)₂C₆H₃) were prepared by treatment of the (dichloromethyl)oligosilanes (Me₃Si)₂R¹Si–CHCl₂ (1a–d), with 2,6-bis(dimethylaminomethyl)phenyllithium (molar ratio 1:2). For 3c and 3d, X-ray structural analyses were performed indicating that only one dimethylamino group of the tridentate ligand is coordinated to the electrophilic silene silicon atoms, i.e., the central silicon atoms are tetracoordinated. The N → Si donation leads to pyramidalization at the silene silicon atoms; the configuration at the silene carbon atoms is planar. For a chemical characterization 3a and 3c were treated with water to give the silanols ArR¹Si(OH)–CH(SiMe₃)₂ (5a,c). Studies of the reactions of 3a and 3c with benzaldehyde, 4-chlorobenzaldehyde or 4-methoxybenzaldehyde, respectively, revealed an unexpected reaction path leading to the substituted 2-oxa-1-sila-1,2,3,4-tetrahydronaphthalenes 12a, 12c, 13 and 14. Both 12a and 12c were structurally characterized by X-ray analyses. The formation of these six-membered cyclic compounds, which is discussed in detail, gives support to a dipolar mechanism for the general reaction of silenes with carbonyl derivatives.     

Detection of carrier information in heterojunctions of nanocrystalline/crystalline Si

Hall effect measurements on heterojunctions of nanocrystalline Si:H (nc-Si:H) film with crystalline Si wafer fabricated by plasma enhanced chemical vapor deposition technique were made as a function of temperature (20–300 K) and magnetic field (0–15 T). Magnetic field-dependent resistivity and Hall data were interpreted with the quantitative mobility spectrum analysis (QMSA) method, which successfully separated the two-dimensional electron gases (2DEGs) at the nc-Si:H/c-Si interface from 3D carriers appearing in the films and substrates. Mobilities and densities of 2DEGs for the specimens were measured. Detail analyses about influences of interface and epitaxial layer quality including doping, film thickness and mean size of nanocrystals on the mobilities and densities of 2DEGs at interfaces were carried out. The important role of the amorphous buffer layer within the junction was identified. Origin of high mobility observed in the prepared films was revealed. Forward and reverse current mechanisms as well as the dependence of breakdown voltages on temperature in the operated nc-Si:H/c-Si heterostructure were elucidated.     

Vibrational spectroscopic study of SiO2-based nanotubes

Novel organic–inorganic hybrid nanotubes containing silica and ethane (EtSNT), ethylene (ESNT) and acetylene (ASNT) units, as well as brominated ESNT (Br-ESNT) and glycine-modified Br-ESNT (Gly-ESNT) have been studied by IR and Raman spectroscopy. The results are compared with the spectral features for conventional silica nanotubes (SNT) and amorphous silica. Bands peculiar to organic moieties have been detected and assigned. Assignment of the silicate backbone vibrations was based on the results of normal coordinate calculations. Furthermore, characteristic silicate, so-called ‘nanotube’ vibrations have been identified and their band positions have been summarized to serve as a future reference for such compounds. SiOSi antisymmetric stretchings were observed in the range 1000–1110 cm⁻¹, while the symmetric stretchings appeared between 760 and 960 cm⁻¹ for EtSNT, ESNT and Br-ESNT.Force constants have been refined for models of the repeating structure units: O₃SiOSi(OSi)₃ for SNT and SiCH_nCH_nSi(OSi)₃ for organosilica nanotubes (n = 2, EtSNT; n = 1, ESNT and n = 0, ASNT). The calculated SiO stretching force constants were increased from 4.79 to 4.88 and 5.11 N cm⁻¹ for EtSNT, ESNT and ASNT, respectively. The force constants have been compared with those for several silicates and SiO bond length are predicted and discussed.