Preparation and properties of ternary ZnMgO nanowires

Zn0.84Mg0.16O and Zn0.12Mg0.88O nanowires with different morphology have been synthesized by a catalyst-free thermal evaporation method using Zn and Mg metals as the raw materials. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), and room-temperature photoluminescence (PL) measurements were used to determine the structure and optical properties of the obtained products. The obtained nanowires have diameters in a range of 30 nm-80 nm, crystallized well as hexagonal and cubic phase, with preferred orientation along the c-axis and a-axis for the two samples of Zn0.84Mg0.16O and Zn0.12Mg0.88O, respectively. Room-temperature PL at wavelengths of 384.4 and 495.8 nm has been observed for the sample of Zn0.84Mg0.16O. Upon annealing in Ar ambient, the emission peaks in PL spectra show a clearly blue shift.     

Structural and optical properties of ZnMgO nanostructures formed by Mg in-diffused ZnO nanowires

ZnMgO nanostructures with wurtzite phase were prepared by thermal diffusion of Mg into the ZnO nanowires. As ZnO light-emitting devices have been operated by using ZnMgO layers as energy barrier layers to confine the carriers, it is essential to realize the characterization of ZnMgO particularly. In this work, the Mg content in Zn_1−xMg_xO alloy determined by X-ray diffraction (XRD) and photoluminescence (PL) shows a good coincidence. The variation of lattice constant and the blueshift of near-band-edge emission indicate that Zn²⁺ ions are successfully substituted by Mg²⁺ ions in the ZnO lattice. In Raman-scattering studies, the change of E₂(high) phonon line shape in ZnO:Mg nanostructures reveals the microscopic substitutional disorder. In addition to the host phonons of ZnO, two additional bands around 383 and 510 cm⁻¹ are presumably attributed to the Mg-related vibrational modes.     

Optical and field emission properties of thin single-crystalline GaN nanowires

Thin high-quality gallium nitride (GaN) nanowires were synthesized by a catalytic chemical vapor deposition method. The synthesized GaN nanowires with hexagonal single-crystalline structure had thin diameters of 10-50 nm and lengths of tens of micrometers. The thin GaN nanowires revealed UV bands at 3.481 and 3.285 eV in low-temperature PL measurements due to the recombination of donor-bound excitons and donor-acceptor pairs, respectively. The blue shifts of UV bands in the low-temperature PL measurement were observed, indicating quantum confinement effects in the thin GaN nanowires which have smaller diameters than the exciton Bohr radius, 11 nm. For field emission properties of GaN nanowires, the turn-on field of GaN nanowires was 8.5 V/microm and the current density was about 0.2 mA/cm(2) at 17.5 V/microm, which is sufficient for the applications of field emission displays and vacuum microelectronic devices. Moreover, the GaN nanowires indicated stronger emission stability compared with carbon nanotubes.     

Needlelike bicrystalline GaN nanowires with excellent field emission properties

Large-yield and crystalline GaN nanowires have been synthesized on a Si substrate via a simple thermal evaporation process. The majority of the GaN nanowires has bicrystalline structures with a needlelike shape, a triangular prism morphology, and a uniform diameter of approximately 100 nm. Field-emission measurements show that the bicrystalline GaN nanowires with sharp tips have a lower turn-on field of approximately 7.5 V/microm and are good candidates for low-cost and large-area electron emitters. It is believed that the excellent filed emission property is attributed to the bicrystalline structure defects and sharp tips.     

Enhanced ultraviolet emission from ZnS-coated ZnO nanowires fabricated by self-assembling method

A simple chemical route for ZnS-coated ZnO nanowires with preferential (002) orientation is reported. Sodium sulfide and zinc nitrate were employed to supply S and Zn atoms at 60 degrees C to form ZnS-coated ZnO nanowires structures. Electron diffraction measurement shows that the ZnO/ZnS core-shell nanostructure is single crystalline. Interesting features are found in the photoluminescence (PL) spectra of ZnS-coated ZnO nanostructures. After coating, the UV emission of nanorods is dramatically enhanced at the expense of the green emission. The core/shell structure with higher band gap shell material and reduced surface states should be responsible for this PL enhancement.     

Fabrication of polydiacetylene nanowires by associated self-polymerization and self-assembly processes for efficient field emission properties

The paper described here concerns a challenge of general interest for producing a novel structure of a polymer aggregate, the achievement of nanowires with controlled diameters. We provide a strategy for fabricating a supramolecular polymer, in which ordered polydiacetylene nanowires can be obtained by associated self-polymerization and self-assembly processes. The polymer nanowire film shows excellent field emission properties with the turn-on field of 8.2 V/mum at 10 muA/cm2 and the maximum current density of 5 mA/cm2 at an applied field of 15 V/mum.     

Comparative structure and optical properties of Ga-, In-, and Sn-doped ZnO nanowires synthesized via thermal evaporation

ZnO nanowires doped with a high concentration Ga, In, and Sn were synthesized via thermal evaporation. The doping content defined as X/(Zn + X) atomic ratio, where X is the doped element, is about 15% for all nanowires. The nanowires consist of single-crystalline wurtzite ZnO crystal, and the average diameter is 80 nm. The growth direction of vertically aligned Ga-doped nanowires is [001], while that of randomly tilted In- and Sn-doped nanowires is [010]. A correlation between the growth direction and the vertical alignment has been suggested. The broaden X-ray diffraction peaks indicate the lattice distortion caused by the doping, and the broadening is most significant in the case of Sn doping. The absorption and photoluminescence of Sn-doped ZnO nanowires shift to the lower energy region than those of In- and Ga-doped nanowires, probably due to the larger charge density of Sn.     

Electron field emission characteristics and field evaporation of a single carbon nanotube

Direct transmission electron microscope (TEM) observations of the field emission and evaporation process of emitting carbon nanotubes (CNTs) shown that the tip structure of the CNT is in general composed of irregular shaped graphitic sheets which extend typically more than 10 nm from the end of the CNT. It is found that the irregular shaped graphitic sheets at the tip of the CNT may greatly enhance the field emission characteristics of the CNT when compared with that having an ideal circular edge. The field evaporation of the CNT proceeds typically via the removal of the irregular shaped graphitic sheets from the tip of the CNT, and field emission characteristics of a CNT depend far more sensitively on the tip structure than on the geometric length of the CNT.     

Shape selective growth of CdS one-dimensional nanostructures by a thermal evaporation process

CdS one-dimensional nanoforms such as nanowires, nanoribbons, network-like nanowires, pearl necklace type nanowires, helical-like nanowires, and nanowire arrays were formed on Si substrates by a simple thermal evaporation route. The shapes of the one-dimensional CdS nanoforms were controlled by varying the experimental parameters such as temperature and position of the substrates. Formation of the CdS one-dimensional nanoforms was initiated by the Au catalyzed vapor-liquid-solid technique, whereas the vapor-solid process played a crucial role in defining the shapes of the nanoforms. Different optical characterizations such as optical absorbance, photoluminescence, and Raman spectroscopy were adopted to explore the physical and structural quality of these CdS nanoforms.     

Synthesis and evolution of novel hollow ZnO urchins by a simple thermal evaporation process

Delicate hollow ZnO urchins have been fabricated by thermal evaporation of metallic zinc powders in a tube furnace without the use of additive, high temperature, or low pressure. The phase transformation, morphologies, and photoluminescence evolution of the ZnO products were carefully studied and investigated with X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and photoluminescence (PL) spectra. These studies indicated that the growth of hollow ZnO urchins involves the vaporization of Zn powder, solidification of liquid droplets, surface oxidation, sublimation, and self-catalytic growth of one-dimensional nanowires.     

Field emission properties of large-area nanowires of organic charge-transfer complexes

In this contribution, large-area organic charge-transfer complex (AgTCNQ and CuTCNQ) nanowires were synthesized by organic vapor-solid-phase reaction at mild experimental conditions. These nanowires were facilitated on the surface of Cu and Ag foils or different kinds of substrates coated with a layer of silver and copper on a large scale. The excellent field emission properties were observed in the as-grown AgTCNQ and CuTCNQ nanowires. They should have great potential in vacuum device applications.     

Electron field emission of iron and cobalt‐doped DLC films fabricated by electrochemical deposition

Using a simple electrochemical depositing process, iron and cobalt‐doped diamond‐like carbon (DLC) films were deposited on Si (100) substrates. The results showed that metallic elements were inhomogeneously doped into highly cross‐linking amorphous carbon matrix, forming the typical nanocrystalline/amorphous nanocomposite structure, and simultaneously the microsturcture of amorphous carbon was changed by the doping of metals. Field emission performance showed that the incorporation of iron and cobalt effectively decreases the threshold field from 13.5 V/µm to 8.0 V/µm and 6.5 V/µm, respectively, and a highest current density of the Co‐DLC film was about 1.2 mA/cm² at the electric field of 23.5 V/µm. Copyright © 2012 John Wiley & Sons, Ltd.     

The effect of emitter geometry on lateral field emission diodes fabricated by AFM-based electrochemical nanolithography

Lateral field emission diodes were successfully fabricated using atomic force microscopy (AFM)-based electrochemical nanolithography and tetramethyl ammonium hydroxide (TMAH) wet etching method. Field emission (FE) current of the silicon emitter cathode was measured as a function of the applied anode voltage under vacuum environment. For narrowed nanogaps from 55 to 35 nm, the turn-on voltage was decreased from 21 to 16 V. The turn-on voltage of the 35 nm gap was reduced from 16 to 8 V by changing the curvature radius of the cathode tip. The sharper emitter had the lowest turn-on voltage, largest field-enhancement factor, and good stability, which were attributed to the small emitter radius at the cathode tip and very slight changes in the local field factor. These results indicate that the diodes fabricated using this technique had the lowest value of turn-on voltage ever reported for lateral silicon FE devices.     

Photonic properties of hybrid colloidal crystals fabricated by a rapid dip-coating process

The enhancement of the capillarity fabrication of well-ordered two-dimensional (2D) and three-dimensional (3D) opal photonic crystal is described herein. The quality enhancement and the reduction of the fabrication time are improved by using core@soft adhesive shell (Silica@PolyButylAcrylate) particles dispersed in an organic solvent with a high boiling point. The hybridization by an elastomeric corona polymer, grafted from the SiO(2) surface, has offered adhesive properties naturally tunable by changing the polymer state from a solvated to a dry one. Such properties involve drastic changes of the self-assembly behavior and qualities. Their use, as elementary building blocks, for colloidal crystal fabrication have required a high withdrawal rate (up to 4000 μm s(-1)), i.e. involving a three order of magnitude reduction in time compared to a classic vertical deposition method (1 to 10 μm s(-1)) and a good control/prediction of the coating thickness can be tuned by varying the withdrawal rate and the particle concentration. In addition, an analysis of the 2D synthetic iridescence of the hybrid photonic crystal was performed under white light, revealing the adhesive shell bridge influence on the dissipation energy of cracks linked to the crystal quality and the photonic properties.     

Photoluminescence properties of SnO2 nanowhiskers grown by thermal evaporation

SnO₂ nanowhiskers were synthesized by thermal oxidation with and without a gold film as a catalyst. The SEM images reveal wire-like and rod-shaped nanowhiskers about several hundred micrometers in length and 100 nm in diameter. The three observed Raman peaks at 474, 632, and 774 cm⁻¹ indicate the typical rutile phase which is in agreement with the X-ray diffraction results. The photoluminescence properties were measured at room temperature. The peaks at 342 nm corresponding to the excitation transitions from the conduction band to the valence band of the SnO₂ nanowhiskers were not observed. However, a strong emission band at 600 nm was detected indicating the existence of oxygen vacancies in both samples. A new emission band at 398 nm was also observed in the sample with the gold film and it could be attributed to the near band-edge emission.     

Growth mechanism and optical properties of aligned hexagonal ZnO nanoprisms synthesized by noncatalytic thermal evaporation

Vertically aligned perfectly hexagonal-shaped ZnO nanoprisms have been grown on a Si(100) substrate via a noncatalytic thermal evaporation process by using metallic zinc powder in the presence of oxygen gas. The as-grown nanoprisms consist of ultra smooth Zn-terminated (0001) facets bounded with the {0110} surfaces. The as-synthesized products are single-crystalline with the wurtzite hexagonal phase and grown along the [0001] direction, as confirmed from the detailed structural investigations. The presence of a sharp and strong nonpolar optical phonon high-E2 mode at 437 cm(-1) in the Raman scattering spectrum further confirms good crystallinity and wurtzite hexagonal phase for the as-grown products. The as-grown nanoprisms exhibit a strong near-band-edge emission with a very weak deep-level emission in the room-temperature and low-temperature photoluminescence measurements, confirming good optical properties for the deposited products. Moreover, systematic time-dependent experiments were also performed to determine the growth process of the grown vertically aligned nanoprisms.     

Non-catalytic and template-free growth of aligned CdS nanowires exhibiting high field emission current densities

Various CdS nanostructures, including nanoparticle film, bundles of quasi-aligned and well-aligned nanowires, were fabricated with a non-catalytic and template-free MOCVD process. The well-aligned CdS nanowires exhibit unusually high field emission current densities of 225 mA cm(-2) at the applied electric field of 20 V microm(-1).     

Characterization of microchip electrophoresis devices fabricated by direct‐printing process with colored toner

This paper reports for the first time the use of colored toner to produce polyester toner (PT) ME devices. Colored PT devices were designed in drawing software and printed on a polyester film using a color laser printer with 3600 dpi resolution. The colored toner is composed of a copolymer mixture (styrene and acrylate), wax, silicon dioxide, and pigments. The presence of silica in the toner composition has enhanced the EOF magnitude and improved the analytical performance. For a pH range between 2 and 12, the EOF measured on a magenta PT chip, for example, ranged from 3.8 to 5.8 (× 10^?4 cm² V^?1 s^?1). Typical separations of inorganic cations (K⁺, Na⁺, and Li⁺) were used as model system to investigate the analytical feasibility of the proposed devices. The repeatability for the migration times of all analytes exhibited RSD values lower than 1% (n = 10). The separation efficiencies found on colored PT devices ranged from 10 000 to 49 000 plates/m, which means between 7 and 23% of the maximum theoretical efficiency on this microfluidic platform (1.85 × 10⁵ plates/m). The improvements achieved on the proposed devices are associated with the small additional amount of silica on the toner composition as well as the printing of channels with smoother surfaces and better uniformity when compared to the conventional PT chips printed with monochromatic laser printers.     

The thermal light emission properties of various polymers

DSC and light emission (LE) curves were obtained in nitrogen, air, and oxygen atmospheres between 300 and 700 K for samples of poly(ethylene), 66 Nylon, polycarbonate, poly(vinyl pyrrolidone), and poly(acrylonitrile). In all atmospheres, initial LE was the “oxyluminescence” type associated with the hydroperoxide radical formation; in nitrogen, after the depletion of absorbed oxygen, a much weaker “chemiluminescence” was observed.