EPR and UV spectrometry investigation of sucrose irradiated with carbon particles

Solid state/EPR (SS/EPR) dosimeters of carbon ions irradiated sucrose are studied with EPR, and their water solutions – with UV spectroscopy. Doses between 20 and 200 Gy are used with linear energy transfer (LET) values for carbon ions of 63, 77, 96 and 230 keV μm^?1. After irradiation all samples show typical for irradiated sucrose EPR and UV spectra. The obtained data are compared with those previously reported for nitrogen particles and gamma rays irradiated sucrose. The identical shape of both the EPR and UV spectra of irradiated with various type radiation samples suggests that generated free radicals are not influenced by the nature of radiation. The lack of difference in the line width of the separate lines or the whole EPR spectrum, obtained for gamma and heavy particles irradiation, suggests negligible spin–spin interaction among the radiation-generated free radicals in the samples. The linear dependence of the EPR response on the absorbed dose radiation is found to be higher when generated by gamma rays, than by the same absorbed dose of heavy particles. In addition, the EPR response for carbon ions is higher than that for nitrogen ions. Water solutions of irradiated sucrose exhibit UV spectrum with absorption maximum at 267 nm, attributed to the recombination products of free radicals. The UV band intensity depends on the absorbed dose radiation. The UV spectra obtained for carbon, nitrogen and gamma rays irradiated sucrose are also compared.     

Microstructure change in poly(ethersulfone) films by swift heavy ions

PES membrane of thickness 25 μm was irradiated by Cl⁹⁺ ions of energy 100 MeV at IUAC, New Delhi. Microstructure changes due to exposure to high-energy ions were investigated by Fourier transform infrared (FTIR) and ultraviolet/visible (UV/vis) absorption spectroscopies, X-ray diffraction technique and by dynamic mechanical analysis (DMA). A significant loss of crystallinity is observed by the XRD data. Particle size or grain size calculated using Scherrer formula indicates measurable change in particle size of irradiated samples. The polymer chain scissions and structure degradations are expected to occur for irradiated samples. Optical properties of the films were changed due to irradiation that could be clearly seen in the absorption spectra. FTIR does not show the remarkable change in the irradiated samples, but there is some change in the surface roughness observed by AFM.     

Conversion between different forms of LET

Measurement of linear energy transfer (LET) spectra by detectors such as CR-39 PNTD or Si diodes for purposes of determining dose and dose equivalent in tissue often requires the conversion of LET as measured in the detector medium (e.g. LET₂₀₀CR-39 or LET_∞Si) to LET in water (LET_∞H₂O). Traditionally this conversion is carried out by multiplying values of LET in the form measured by a single numerical constant. Here we present an alternative conversion method wherein the single constant is replaced by a mathematical function obtained from a least squares fit of LET values for heavy ions of Z ranging from 1 to 54 over an energy interval ranging from 0.8 to 2000 MeV/amu. For conversion of LET₂₀₀CR-39 to LET_∞H₂O in units of keV/μm, a fitted function of Log(LET_∞H₂O) = 0.1689 + 0.984Log(LET₂₀₀CR-39) was obtained. For conversion of LET_∞Si to LET_∞H₂O, a fitted function of Log(LET_∞H₂O) = ?0.2902 + 1.025Log(LET_∞Si) was obtained.     

EPR Investigation of Radical-Production Cross Sections for Sucrose and L-alanine Irradiated with X-rays and Heavy-ions

Using electron paramagnetic resonance (EPR), we investigated stable radical-production cross sections (σ) of sucrose and L-alanine radicals produced by heavy-ion irradiations with various linear energy transfers (LET). The heavy-ion irradiation results were compared with those of X-ray irradiation at the same dose. The EPR signal areas for the two compounds showed a linear relation with the absorbed dose, as well as a logarithmic correlation with the LET. Further analysis was carried out for the radical-production cross section, which showed that stable radicals of the two compounds were produced through collisions of several particles with a single molecule. The relative σ value of sucrose for C ion irradiation was (1.29 ± 0.64) × 10⁻¹² μm². The σ value of alanine for C ion irradiation was (6.83 ± 0.42) × 10⁻¹³ μm². Considering the structural molecular sizes of sucrose and alanine, the σ values are similar. In addition, a comparison of the EPR results for the C ions and X-rays at 50 Gy dose was made. Sucrose spin concentrations produced by C ions at the LET value of 13.1 keV/μm and X-rays were similar unlike alanine. Thus, the noble EPR results with X-ray and heavy-ion irradiations imply that sucrose can be useful as a radiation indicator.     

Ion beam induced reaction of carbon films on Si(1 0 0)

The irradiation effects of 2 MeV He⁺ and Ar⁺ ions on the film structure of the C–Si system were investigated with RHEED and XPS. The formation of SiC phase and/or the growth of epitaxial SiC were possible by He⁺ irradiation for the carbon films up to 0.7 nm in thickness, which was thinner than that by Ar⁺ irradiation. The He⁺ irradiation could not grow the turbostratic graphite which could be grown by Ar⁺ irradiation. The mechanism of the formation and the epitaxial growth of SiC by ion irradiation was discussed from the view point of the energy transfer from the irradiated ions.     

Controlled fabrication of Si nanostructures by high vacuum electron beam annealing

Silicon nanostructures, called Si nanowhiskers, have been successfully synthesized on Si(1 0 0) substrate by high vacuum electron beam annealing (EBA). Detailed analysis of the Si nanowhisker morphology depending on annealing temperature, duration and the temperature gradients applied in the annealing cycle is presented. A correlation was found between the variation in annealing temperature and the nanowhisker height and density. Annealing at 935 °C for 0 s, the density of nanowhiskers is about 0.2 μm⁻² with average height of 2.4 nm grow on a surface area of 5×5 μm, whereas more than 500 nanowhiskers (density up to 28 μm⁻²) with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 °C for 0 s. At a cooling rate of −50 °C s⁻¹ during the annealing cycle, 10–12 nanowhiskers grew on a surface area of 5×5 μm, whereas close to 500 nanowhiskers grew on the same surface area for samples annealed at the cooling rate of −5 °C s⁻¹. An exponential dependence between the density of Si nanowhiskers and the cooling rate has been found. At 950 °C, the average height of Si nanowhiskers increased from 4.0 to 6.3 nm with an increase of annealing duration from 10 to 180 s. A linear dependence exists between the average height of Si nanowhiskers and annealing duration. Selected results are presented showing the possibility of controlling the density and the height of Si nanowhiskers for improved field emission properties by applying different annealing temperatures, durations and cooling rates.     

Pulsed laser induced damage in SOI material

Laser-induced damage in silicon-on-insulator (SOI) material is investigated with 1064 nm laser pulses. As the laser pulse duration is increased from 190 ps to 1.14 s, the damage threshold of SOI material decreases from 1.3×10¹⁰ to 7.7×10³ W/cm² in laser flux. It is found that the damage threshold varies inversely as the pulse duration for a short irradiation time, and is independent of pulse duration for a long irradiation time. The time dependence is in good agreement with a thermal model which well describes the thermal-induced damage in a semi-finite material irradiated by a Gaussian laser beam. The values of absorption coefficient and thermal conductivity under laser irradiation are calculated as 1.1×10³ cm^?1 and 0.18 Wcm^?1 K^?1, respectively, by fitting the model to the experimental results. These results on material damage can be used to predict the damage thresholds of SOI-based devices.     

High-energy ion induced physical and surface modifications in antimony sulphide thin films

Sb₂S₃ thin films prepared by electrodeposition on indium tin oxide coated glass substrate were irradiated with 150 MeV Ni¹¹⁺ ions for various fluence in the range of 10¹¹–10¹³ ions/cm². The modifications in the structure, surface morphology and optical properties have been studied as a function of ion fluence. X-ray diffraction (XRD) analysis indicates a shift in the (2 4 0) peak position towards lower diffraction angle and a decrease in grain size with increase in ion fluence. Presence of microcracks due to irradiation induced grain splitting effect has been observed from the SEM micrograph at higher ion fluence. The optical absorbance spectrum revealed a shift in the fundamental absorption edge and the band gap energy increased from a value of 1.63 eV for as-deposited films to 1.80 eV for the films irradiated with 10¹³ ions/cm².     

Thermoluminescence,infrared reflectivity and electron paramagnetic resonance properties of hemimorphite

Silicate mineral hemimorphite has been investigated concerning its TL, IR and EPR properties. A broad TL peak around 180 °C and a weaker and narrower peak around 360 °C were found in a sample annealed at 600 °C for 1 h and then irradiated. The deconvolution using the CGCD method revealed peaks around 132, 169, 222 and 367 °C. The reflectivity measurements showed several bands in the NIR region due to H₂O, OH and Al–OH complexes. No band was observed in the visible region. The thermal treatments were carried out from ∼110 to 940 °C and dehydration was observed, first causing a diminishing optical absorption in general and the disappearance of water and hydroxyl absorption bands. The EPR spectrum of natural hemimorphite, presented Cu²⁺ signals at g = 2.4 and g = 2.1 plus E₁′ signal superposed to Fe³⁺ signal around g = 2.0.     

Development of dry polymer electrolyte based on polyethylene oxide with co-bridging agent crosslinked by electron beam

Polyethylene oxide (PEO)-based electrolytes were crosslinked using electron beam (EB) irradiation. The gel contents of a polymer film were increased after irradiation doses of 0, 140, 280, and 420 kGy, with ionic conductivities of 0.831, 1.55, 6.08, and 7.95 (× 10^? 5) S cm^? 1 at 40 °C, respectively. The slight decrease in conductivity at higher temperatures after irradiation is due to the retardation of polymer motion by crosslinking. The electrolyte with higher EB dose amount exhibits higher conductivity due to stabilization of the amorphous state. The EB crosslinking with a co-bridging agent shows enhanced conductivities of 4.71, 6.59, and 7.18 (× 10^? 5) S cm^? 1 at 40 °C, after irradiation with 140, 280, and 420 kGy. Addition of the co-bridging agent is effective for developing a crosslinked structure with a smaller EB dose. Tensile strength becomes two to three times higher with irradiation compared to the non-treated polymer. Combination of the EB technique with a co-bridging agent is a simple and effective method to prepare strong dry polymer electrolyte films with improved room temperature conductivity.     

Absorption,luminescence, and electron paramagnetic resonance of molybdenum ions in CdWO4

A single crystal of cadmium tungstate (CdWO₄) containing approximately 200 ppm of molybdenum was grown by the Czochralski method and then characterized in a series of optical absorption, photoluminescence (PL), photoluminescence excitation (PLE), and electron paramagnetic resonance (EPR) experiments. The Mo⁶⁺ ions substitute for W⁶⁺ ions and serve as recombination sites for electrons and holes when the crystal is exposed to ionizing radiation. A charge-transfer absorption band for the Mo⁶⁺ ions was observed near 320 nm at 10 K. The PL experiments, performed at low temperature with 325 nm excitation, showed a Mo-associated emission peaking near 680 nm. A direct correlation of the 680 nm emission and the 320 nm absorption band was established by the PLE data. When these doped CdWO₄ crystals are exposed at low temperature either to light that is near or above the band gap or to X-rays, the Mo⁶⁺ ions can trap an electron and form stable Mo⁵⁺ ions. The EPR spectrum of the Mo⁵⁺ ions was observed at temperatures near 15 K, and a complete set of parameters describing the g matrix was obtained from an angular dependence study.     

Radioluminescence of synthetic quartz related to alkali ions

The radioluminescence (RL) of synthetic quartzes (GEMMA Quartz & Crystal Company) has been measured at room temperature. Some samples were treated by electrodiffusion (“sweeping”) in order to change the concentrations of alkali ions, mainly Li⁺ and Na⁺, which in quartz are known to be linked to Al ions, substitutional for Si ions.The RL emission spectra show evidence of a role of alkali ions in affecting some specific emissions. All the spectra could be analysed as composed of four bands in the blue and UV region. Specifically, the well known blue emission at around 470 nm was seen to be composed by two bands at 430 nm (2.86 eV) and at 485 nm (2.53 eV). Effects of irradiation, during the RL measurements, were clearly seen only in the “Li swept in” sample, namely an increase in the 485 nm band intensity and a decrease in the 430 nm band one. The previously reported UV emission was detected at 355 nm (3.44 eV) in all the samples, being the most intense band in the “swept out” sample. A further UV emission was detected at 315 nm (3.94 eV), more intense in untreated samples.Possible assignments of the detected emission bands are discussed in relation to the defects of quartz, specifically focusing on the Al centres that are most affected by sweeping procedures.     

Formation of binary clusters by molecular ion irradiation

In the present study, we have observed silicon–carbon cluster ions (Si_nC_m⁺) emitted from a Si(1 0 0) surface under irradiation of reactive molecular ions, such as C₆F₅⁺, at 4 keV, 1 μA/cm². The cluster Si_n up to n=8 and “binary” cluster Si_nC up to n=6 are clearly detected for the C₆F₅⁺ irradiation. Stoichiometric clusters (Si_nC_m n=m) except SiC⁺ and other binary clusters which contain more than two carbon atoms (m≥2) were scarcely observed. The observed clusters show a yield alternation between odd and even n. The intensities of Si₄, Si₆ and Si₅C clusters are relatively higher than those of the neighboring clusters. In the case of Si₅C, it is considered that doped carbon atom acts as silicon atom. These results imply that the recombination through the nascent cluster emission and subsequent decomposition takes place during the cluster formation.     

Irradiation induced modifications in morphology and magnetic property of Mn/Si structure

Mn films of ∼50 nm has been deposited by electron beam evaporation technique on cleaned and etched Si [(1 0 0), 8–10 Ω cm] substrates to realize a Mn/Si interfacial structures. The structures have been irradiated from energetic (∼100 MeV) ion beam from Mn side. The irradiated and unirradiated structures have been characterized from atomic force microscopy, X-ray diffractometry, magnetic force microscopy, and vibrating sample magnetometer facilities. It has been found that surface/interfacial granular silicide phases (of Mn_xSi_y) are formed before and after the irradiation with a irradiation induced modifications of surface morphology and magnetic property. The surface/interface roughness has been found to increase on the irradiation from the atomic force microscopy data. The magnetic property on the irradiation shows an interesting and significant feature of an increased coercivity and a ferromagnetic like behavior in the Mn–Si structure. The observed increased coercivity has been related to the increased roughness on the irradiation. The ferromagnetism after the irradiation is a curious phenomenon which seems due to the formation of Mn–C–Si compound from the carbon dissolved in silicon.     

Effect of phosphorus irradiation on the structural,electrical, and optical characteristics of ZnO thin films

Phosphorus irradiation at a low energy (50 keV) and at a dosage of 8×10¹⁴ ions/cm² was carried out on 〈002〉 ZnO films grown by using a pulsed laser deposition technique (Sample A). Subsequent rapid thermal annealing at 650 °C and 750 °C was performed to remove defects resulting from the irradiation (samples B and C, respectively). Atomic force microscopy was used to determine the root mean square roughness, which was 10.07, 8.66, and 9.31 nm for samples A, B, and C, respectively. Low-temperature photoluminescence measurements revealed increased deep-level defect peaks following irradiation; however, the subsequent annealing minimized the defects. Although the dominant donor-bound exciton peak verifies the n-type conductivity of the films, the free–electron–to–acceptor and donor-to-acceptor pair peaks in the irradiated samples confirm an increase in acceptor concentration.     

Photocatalytic water splitting of La2AlTaO7 and the effect of aluminum on the electronic structure

A new photocatalyst La₂AlTaO₇ with orthorhombic structure was synthesized by the solid-state reaction method. The formation rate of H₂ evolution from CH₃OH/H₂O solution under the irradiation of a 350 W high-pressure Hg lamp is about 108.9 μmol h^?1 for La₂AlTaO₇ (0.1 g). It also showed activity leading to the decomposition of pure water into H₂ and O₂ even in the absence of co-catalysts under UV light irradiation. The photocatalyst loaded with 0.2 wt% NiO co-catalyst was found to have the highest activity. It was found from the electronic band structure study, using the density functional theory (DFT) with plane-wave basis, that the valence band top mainly consists of O 2p orbitals and the conduction band bottom is mainly constructed of Al 3s3p. The effect of aluminum on electronic structure was discussed in close connection with the UV–vis absorption spectrum.     

YAG laser-induced β-BaB2O4 crystalline dot formation in Sm2O3–BaO–B2O3 glasses

A continuous-wave (CW) YAG laser (power: 0.75–0.9 J/s, irradiation time: 15 s–15 min) with a wavelength of 1064 nm is irradiated to 11.1Sm₂O₃·44.4BaO·44.4B₂O₃ glass, and the formation of β-BaB₂O₄ (β-BBO) crystalline dots with a diameter of 30–150 μm is confirmed from micro-Raman spectra. β-BBO crystals with around 200 μm length grow towards the interior of the glass. The incorporation of Sm³⁺ into β-BBO crystalline dots is suggested from micro-Raman and fluorescence spectra. The second harmonic generation is detected from the array (10×10=100 dots) of β-BBO crystalline dots, indicating that each crystalline dot formed by YAG laser irradiation is a nonlinear optical crystal. CW YAG laser irradiation to glass with Sm³⁺ ions is a nice technique for a spatially controlled crystal growth.     

Color center of YAlO3 with cation vacancies

High quality pure YAlO₃ crystal with dimension of Φ 30 × 50 mm² was grown by Czochralski technique. UV irradiation and air annealing bring additional absorption in the region 200–800 nm. The absorption spectra of perfect YAlO₃ and YAlO₃ containing cation vacancy (aluminium vacancy and yttrium vacancy) were calculated using density functional theory code CASTEP. Comparison of the simulated absorption spectra with the experimental absorption spectra of YAlO₃ after UV irradiation and air annealing treatments shows that cation vacancies are responsible for part of the coloration on YAlO₃ crystal.     

Kinetics and thermodynamics of sucrose crystallization from pure solution at different initial supersaturations

Growth rates of sucrose crystallization from pure solutions of initial relative supersaturation levels between 0.094 and 0.181 were studied in agitated crystallizer at 313.13 K. Birth and spread model was applicable for the obtained growth rate data in this range of supersaturation and used to estimate the principal growth parameters. The estimated interfacial free energy varied inversely with supersaturation from 0.00842 to 0.00461 J/m², respectively. The obtained kinetic coefficient changed with the initial supersaturation from 9.45 × 10^? 5 to 2.79 × 10^? 7 m/s. The corresponding radius of the 2D (two dimensional) critical nucleus varied from 7.47 × 10^? 9to 1.46 × 10^? 9 m. Predominance of surface integration or volume diffusion mechanism during the growth process was assessed using the calculated activation free energies of the 2D nucleation process. An acceptable confirmation of the calculated radius of the critical 2D nucleus was found using atomic force microscopy (AFM) technique. The calculated interfacial free energy between the saturated sucrose solution and the crystal surface was found to be 0.02325 J/m².