强激光辐照下光电探测器响应性能的研究

 响应度R是反映探测器性能的一项重要指标,当探测器被强激光损伤后,光电探测器的响应度将发生改变。设计了一套实时测量探测器响应度的装置,用能量逐渐增加的Nd∶YAG激光辐照PIN光电探测器,获得了探测器响应度与入射强激光功率密度的变化关系。从实验数据可知,探测器被功率密度低于7.6×105W/cm2的激光辐照后不会发生损伤,探测器对532nm参考光的响应度不变;当激光的功率密度超过1.27×106W/cm2时,激光辐照后,探测器对532nm参考光的响应度开始下降,当探测器被功率密度为6.01×106W/cm2的激光辐照后,响应度迅速下降,PN结遭到破坏是探测器响应度下降的根本原因,扫描电镜的结果与我们的分析相一致。     

一种近红外探测器的光谱响应率测量

对近红外辐射功率光谱绝对响应率的定标技术进行了研究。设计了一种制冷扩展波长型的InGaAs探测器，为了使其能够作为功率传递的标准探测器工作在（1.2～2.5）μm波长范围，对探测器的光谱响应率进行了测量。首先在1260nm波长下进行绝对功率传递的标定试验，然后用基于红外单色仪的光谱比较系统（SCF）测量了探测器的相对光谱响应率。结合2个步骤的数据，最终可以得到探测器的绝对光谱响应率。     

Polarization and p-type doping effects on photoresponse of separate absorption and multiplication AlGaN solar-blind avalanche photodiodes

The photoresponse characteristics of separate absorption and multiplication (SAM) AlGaN solar-blind avalanche photodiodes (APDs) were investigated in detail. The p-i-n-i-n avalanche photodiodes were examined using the newly designed model of avalanche photodiodes in AlGaN. The research results showed that the dark current density was about 3.51 × 10^?8 A/cm², the light current density was 5.86 × 10^?5 A/cm² under near-zero bias, and the avalanche breakdown occurred at about 135.0 V under reverse bias, which were all consistent with the experimental data. To investigate the effects influencing the photoresponse characteristics of the APDs, their photo responsivity spectra under different biases were simulated. The APD featured a window region over the wavelength range from 260 to 280 nm with a high rejection ratio on the short-wavelength side. Meanwhile, the dependence of APD responsivity on the polarization charge revealed that the negative polarization charges strongly affected the responsivity. Increased negative polarization charges at the Al_0.4Ga_0.6N/Al_0.6Ga_0.4N interface markedly lowered the responsivity, whereas charges of the same polarity at the GaN/Al_0.4Ga_0.6N interface enhanced the responsivity. Furthermore, the dependence of responsivity on p-type doping was analyzed by comparison with the effects of negative polarization charges on the conduction band of the APDs. Finally, the inversion layer models are used to interpret the effects of these on the APD responsivity. This research is useful for exploring polarization and p-type doping effects in SAM AlGaN structures and realization of high responsivity solar-blind APDs.     

红外探测器光谱响应度测试技术研究

光谱响应度是探测器的重要技术参数之一，随着红外探测技术的发展，精确测量红外探测器的光谱响应度变得越来越重要。首先对红外探测器光谱响应度的测试技术进行分析，然后建立红外探测器相对光谱响应度测量装置，并用腔体热释电探测器在该装置上进行红外探测器光谱响应度校准实验。通过对红外探测器相对光谱响应度进行重复测量，给出测量结果的平均值，最后对影响测量结果的不确定度进行分析。由于该装置的测量范围是1～20μm，因此还可以实现InSb探测器和HgCdTe探测器相对光谱响应度的测量。不确定度分析结果表明，InGaAs探测器光谱响应度的测量精度较高。     

Establishment of Illuminance Scale at UME with an Accurately Calibrated Radiometer

Traceability in illuminance measurements at the National Metrology Institute of Turkey (TüBITAK-UME) was established in 2003 with a detector-based realization. The new measurement technique was developed for the determination of illuminance responsivity and upgrating of the illuminance scale. The unit of the illuminance responsivity, in A/lx, was measured with an expanded uncertainty of 0.2% (k = 2) by supplying using the developed scanning technique for the calculation of color correction factor. The surface of a radiometer was scanned using a double-monochromator facility upgraded with an x-y scanning system. The illuminance responsivity as a function of bandpass and temperature were also investigated in this study. To use a radiometer in the photometric applications of metrology, a light-sensitive device, a so-called trap detector, was characterized by measuring the absolute responsivity, the non-linearity, and spatial non-uniformity.     

Theoretical and experimental responsivity of fir antenna coupled metal-insulator-metal detectors

In this work we report a complete theory of the metal-insulator-metal, antenna coupled, mm and sub-mm detectors. The voltage-power responsivity is simply derived from the geometrical antenna proprieties and the electrical junction characteristics. The calculated responsivity simply foresees our experimental results in the sub-mm — mm range and well fits all the previously reported data     

Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect

The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic(IPV) effect is investigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the conduction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors.     

红外光谱响应度测试系统研究

红外光谱响应度是红外探测领域的重要技术指标。介绍了红外光谱响应度的测试技术及其测试系统。该系统选用以无光谱选择的腔体热释电探测器为标准,用双单色仪进行分光同时,采用国际上最新的测试方法完成了红外波段光谱响应度的测量,获得了高的测量不确定度,分析了测试结果及其影响因素。     

Theoretical and experimental responsivity of fir antenna coupled metal-insulator-metal detectors

In this work we report a complete theory of the metal-insulator-metal, antenna coupled, mm and sub-mm detectors. The voltage -power responsivity is simply derived from the geometrical antenna proprieties and the electrical junction characteristics. The calculated responsivity simply foresees our experimental results in the sub-mm — mm range and well fits all the previously reported data     

Realization of relative responsivity scale with the electrically calibrated pyroelectric radiometer

In UME, the relative spectral responsivity scale extending from 250 to 2500 nm was realized using electrically calibrated pyroelectric radiometer (ECPR). Its absolute spectral responsivity was determined against the electrical substitution cryogenic radiometer (ESCR) facility at 488.1, 514.6, 532.0, and 632.8 nm with an uncertainty of 1 part in 10⁴ (k=2). The relative spectral responsivity scale of ECPR was derived from the surface reflectance data and absolute spectral responsivity data for the mentioned spectral range. Optical characterization of its spatial non-uniformity (at 632.8 nm) and surface reflectance (over 250–2500 nm wavelength region) indicated that the gold-black absorber is spectrally flat within 0.1%. The total expanded uncertainty in the realization of the mentioned radiometric scale along with ECPR was estimated as 1.74%.     

半导体光电探测器响应度测试装置的研制

分析了半导体光电探测器光谱响应度的测试原理;研制了一套波长为０．４～１．１μｍ的光谱响度测试装置。该装置采用双光路替代法,可以测试绝对光谱响应度、相对光谱响应度和量子效率,并可减小光源不稳定性对测试结果的影响,最终给出了测试结果比对。     

Responsivity analysis of micro-bolometer under pulsed bias

The physical thermal model for micro-bolometer under pulsed voltage bias is built, and the current responsivity expression of the micro-bolometer based on this physical thermal model is approximatively obtained in theory, which is in accordance with the numerical calculation of micro-bolometer current responsivity. Theoretical analysis shows that the current responsivity parameter is changed with voltage bias time, and this indicates that the current responsivity of micro-bolometer under pulsed voltage bias can be controlled by adjusting useful voltage bias time which is equal to micro-bolometer current integration time. The expression of the current responsivity parameter reveals key factors relevant to the output signal signal-to-noise of micro-bolometric focal plane array, and theoretically gives one of the directions to increase the output signal signal-to-noise of micro-bolometric focal plane array.     

地物光谱仪测量中的温湿度影响

地物光谱仪在遥感领域的应用日益重要,可用于研究不同地物条件下可见和红外的光谱辐射特性,从而获得地表的光谱辐射亮度、光谱辐射照度或方向反射因子等信息。地物光谱特性的准确测量是光学遥感定量分析的基础,对于航天传感器定标、遥感数据反演等具有极其重要的意义。地物光谱仪在测量前必须进行光谱辐射定标,一方面定标过程中地物光谱仪的光谱响应特性可能发生漂移,另一方面测量时的环境与定标环境可能差异较大,都会影响测量的准确性。在恒温恒湿条件下,实验采用谱线灯光源和积分球光源考察了地物光谱仪波长和光谱响应度随探测器温度的变化。数据显示当光谱仪内部硅阵列探测器温度上升时,波长位置并未发生改变;而光谱仪的光谱响应度随着温度上升明显增大。当硅探测器温度从28.3 ℃升至35.2 ℃时,光谱仪在380～990 nm的光谱响应度变化达到1.8%～7.3%;同时近红外1 000～1 800 nm的平均变化约3.0%,2 000～2 500 nm的变化约1.9%。当改变环境温度和湿度时,测量数据表明湿度影响主要在大气中水分子的吸收峰附近波长,对其他波长影响很小;光谱仪光谱响应度与内部探测器的温度近似存在一一对应关系,环境温度的影响可以近似根据内部探测器温度变化予以表征。理论上当环境条件改变时,根据光谱响应度随温度的变化和探测器的监测温度,可以进行光谱数据修正。最后,实验测量了一组探测器温度下对应的光谱响应度,采用多项式拟合和最小二乘法建立了地物光谱仪光谱响应度与温度的函数关系。根据函数关系插值得到的光谱响应度修正因子和直接测量得到的数据基本一致,全谱段的差异几乎都小于0.2%,表明光谱响应度与温度的对应关系可用于解决不同环境条件下的测量准确性。     

紫外ICCD相对光谱响应度测量技术研究

光谱响应度是探测器的重要技术参数之一,随着紫外探测技术的发展,精确测量紫外探测器的光谱响应度变得越来越重要。文章分析了紫外ICCD(UV-ICCD)相对光谱响应度的测量原理,采用了直接比较法测定待测探测器的相对光谱响应度,并基于具有优异紫外响应能力的科研级光谱仪建立了UV-ICCD光谱响应的测量装置。实验获取了UV-ICCD的相对光谱响应度曲线,从曲线中可以看出,UV-ICCD光谱响应范围为220～300 nm,峰值响应在270 nm附近,表明该器件具有日盲特性。不确定度分析结果显示,UV-ICCD相对光谱响应度测量的最大不确定度约为7.79％,满足测量要求。     

Metal-semiconductor-metal ultraviolet photodetector based on GaN

A metal-semiconductor-metal (MSM) ultraviolet photodetector has been fabricated using unintentionally doped n-GaN films grown on sapphire substrates. Its dark current, photocurrent under the illumination with λ = 360 nm light, responsivity, and the dependence of responsivity on bias voltage were measured at room temperature. The dark current of the photodetector is 1.03 Na under 5 V bias, and is 15.3 Na under 10 V bias. A maximum responsivity of 0.166 A/W has been achieved under the illumination with λ= 366 nm light and 15 V bias. It exhibits a typical sharp band-edge cutoff at the wavelength of 366 nm, and a high responsivity at the wavelength from 320 nm to 366 nm. Its responsivity under the illumination with λ= 360 nm light increases when the bias voltage increases.     

The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector

In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet (UV) photodetector is simulated based on numerical model in the range from 300K to 900K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.     

Characterization of silicon photodiode-based trap detectors and establishment of spectral responsivity scale

Spectral responsivity scale was established at National Metrology Institute of Turkey (UME) between 350 and 850 nm wavelength ranges. The scale is based on UME made reflection type trap detector consisting of three single element silicon photodiodes. Various measurements systems were established in order to make optical characterization of trap detectors like linearity, polarization sensivity, uniformity and spectral responsivity. The absolute responsivity linked to the absolute optical power was obtained using improved laser stabilization optics and electrical substitution cryogenic radiometer system at discrete laser wavelengths. Using physical models for the trap detectors, reflectance and internal quantum efficiency the scale was realized with an expanded uncertainty of 0.05%.     

基于可调谐激光的光谱辐射照度响应度定标

探测器的光谱辐射照(亮)度响应度是辐射定标中最重要的参数之一。传统的光谱辐射定标采用宽谱段光源和单色仪装置测量,新建的激光辐射测量装置采用激光和探测器测量,可以大大降低测量的不确定度。该装置首先将可调谐激光耦合进入积分球生成均匀的朗伯体单色光源,然后采用低温辐射计量传的标准陷阱探测器和面积已知的光阑,进行400～900 nm探测器的光谱辐射照度响应度标定。研究主要集中在四个方面：(1) 低温辐射计仅在某些分立激光波长定标标准探测器,其他激光波长下的光谱响应度必须进行插值,通过对比光谱响应度直接测量方法推导的陷阱探测器量子吸收效率,可以计算插值在其他波长带来的光谱响应度偏差,结果表明400～900 nm数据插值算法的总体偏差小于0.074%;(2) 实验采用电荷积分法测量标准探测器和被测探测器的电荷信号,并采用监视探测器消除激光功率起伏以降低激光功率稳定性的影响,测量重复性优于0.1%;(3) 针对标准探测器在向低温辐射计溯源和进行光谱辐射照度响应度量传时的激光功率差异,采用激光双光路叠加法测量探测器不同波长下的非线性系数,分析标准探测器光谱非线性带来的测量不确定度,在450,632.8和850 nm波长下,当探测器电流从0.2 mA变到3 nA时的非线性修正小于1.000 25;(4) 针对标准探测器定标时的功率模式和量传时的辐射照度模式差异,采用二维电控位移平台测量探测器的均匀性并进行修正,测量得到的标准探测器中心直径5 mm的非均匀性小于0.03%。最终采用可调谐激光辐射照度响应度测量装置,可以实现400～900 nm辐射照度响应度测量不确定度0.14%～0.074%(k=1)。实验对比了激光辐照度响应度装置和标准灯-单色仪装置两种方法测量的探测器的光谱辐射照度响应度。测量结果表明两种装置在400～900 nm的响应度标定近似等价,测量偏差全部位于标准灯-单色仪装置的测量不确定度范围内, 验证了激光辐照度响应度测量装置的实用性。     

用于Z箍缩物理实验中光电管与光电倍增管相对灵敏度标定方法

软X光闪烁体功率计(闪烁体光电管系统)是阳加速器及PTS装置上进行Z箍缩实验获取软X光总辐射功率及能量等参数的主要设备,光谱响应灵敏度是这套设备最关键的物理参数。为获取闪烁体功率计系统的光谱响应灵敏度,在北京同步辐射实验室进行了闪烁体与光电倍增管系统的光谱响应灵敏度标定,而要将闪烁体与光电倍增管系统的光谱响应灵敏度转换成Z箍缩实验需要的闪烁体与光电管系统的光谱响应灵敏度,还需要进行光电管与光电倍增管相对灵敏度标定,为此研制了一套光电管与光电倍增管光谱响应灵敏度相对标定系统。应用此系统进行标定实验,得到了光电管与光电倍增管的相对灵敏度,进而推出了功率计系统的光谱响应灵敏度。     

空气背衬芯轴型光纤水听器加速度性能研究

对用于水声探测的光纤水听器,加速度相移灵敏度是一个重要的参数。本文采用有限元法对空气背衬芯轴型光纤水听器的加速度相移灵敏度进行了理论分析,并通过实验验证,得到了空气背衬芯轴型光纤水听器加速度相移灵敏度的优化规律,提高芯轴壳体的硬度可有效降低光纤水听器的加速度相移灵敏度,而改变芯轴壳体的厚度对水听器加速度灵敏度影响不大。