Study on charge transfer interaction and valence state of layered perovskite-type mixed valence complex [NH3(CH2) n NH3]2[(AuII2)(AuIIII4)(I3)2] (n = 7, 8), by means of 197Au Mössbauer spectroscopy

Cs₂[Au^I X ₂][Au^III X ₄](X = Cl, Br, and I) is well known for the three-dimensional perovskite-type gold mixed valence system. Recently, layered perovskite-type gold mixed valence complexes, [NH₃(CH₂) _n NH₃]₂[(Au^II₂)(Au^IIII₄)(I₃)₂] (n = 7 and 8), have been synthesized. We have investigated the relationship between the structural dimensionality and the Au^I–Au^III charge transfer interaction for Cs₂[Au^II₂][Au^IIII₄] and [NH₃(CH₂) _n NH₃]₂[(Au^II₂)(Au^IIII₄)(I₃)₂] (n = 7 and 8) by means of ¹⁹⁷Au Mössbauer spectroscopy.     

On the Fermi functionsI −(n+1/2)

We point out that an integral representation is possible for the Fermi functionsI _?3/2,I _?5/2,I _?7/2,I _?9/2, andI _?11/2 that arise in the extended Thomas-Fermi theory of hot, non-relativistic fermion systems. These functions can thus be computed by straightforward numerical integration, thereby avoiding problems previously encountered.     

Mid-infrared emissions from Ho3+ in Ga2S3-GeS2-Sb2S3 glass

Emission properties were investigated in the infrared region for Ga₂S₃-GeS₂-Sb₂S₃ glasses doped with Ho³⁺. We performed Judd–Ofelt analysis and lifetime measurements of the ⁵I₄, ⁵I₅, and ⁵I₆ levels, which are the initial levels of the mid-infrared emissions between 3 to 5 μm of Ho³⁺. The quantum efficiencies reached approximately 18%, 64%, and ～100% for the ⁵I₄, ⁵I₅, and ⁵I₆, respectively. Population analyses were carried out from the relative intensities of the emissions in the near-infrared region. We investigated the dependences on the Ho³⁺ ion concentration of the population ratio of the initial levels to the final levels, [initial]/[final], of the mid-infrared emissions. The population ratio of [⁵I₅]/[⁵I₆] decreased with increase of the Ho³⁺ concentration while those of [⁵I₄]/[⁵I₅] and [⁵I₆]/[⁵I₇] increased. Particularly, the former, [⁵I₄]/[⁵I₅], rapidly increased because of the strong concentration quenching of the ⁵I₅ level through cross relaxation. It was found that the population inversion for the 4.8 μm emission due to the transition, ⁵I₄→⁵I₅, was achieved at high Ho³⁺ concentration in the present experiments.     

Measurement of L X-ray fluorescence cross sections and relative intensities for some elements in the atomic range 78 ≤ Z ≤ 92

The L X-ray fluorescence cross sections (σ_Ll, σ_Lα, σ_Lη, σ_Lβ, σ_Lβ6, σ_Lβ2,₄, σ_Lβ1,₃, σ_Lβ9,10, σ_Lγ, σ_Lγ1, σ_Lγ2,3, σ_Lγ4 and σ_Lγ5) and relative intensities (I_Lα, I_Ll, I_Lη, I_Lβ, I_Lβ6, I_Lβ2,4, I_Lβ1,3, I_Lβ9,10, I_Lγ, I_Lγ1, I_Lγ2,3, I_Lγ4 and I_Lγ5) for some elements in the atomic range 78 ≤ Z ≤ 92 have been measured at 59.54 keV photons energies from an Am-241 point source. The L X-rays emitted by samples have been counted by a Si(Li) detector. The L X-ray fluorescence cross sections and relative intensities have been also calculated theoretically by using atomic parameters. The measured values have been compared with the theoretical values.     

An effective lagrangian for multiphoton processes and a non-linear Born-Infeld lagrangian

An effective lagrangian for multiphoton processes (of Euler-Heisenberg type) is computed for an electromagnetic field interacting with massive scalar, fermion and vector particles. It is found that if the charges g_I, masses m_I and numbers N_I of massive particles satisfy the “supersymmetric” conditions, N_Sm_S⁴+3N_Vm_V⁴?2N_Fm_F⁴=0 and g_I²/m_I⁴ is I-independent, where I=S, F, V stands for scalars, fermions and vectors respectively, then not only quartic divergences (poles at n=0 in dimensional regularization) proportional to constant terms cancel out but also maximally helicity changing interaction terms vanish in the effective lagrangian. A possibility to relate a non-linear Born-Infeld lagrangian to the effective lagrangian is examined.     

Diffusion in very chaotic hamiltonian systems

We study nonintegrable hamiltonian dynamics: H(I,θ) = H₀(I) + kH₁(I,θ), for large k, that is, far from integrability. An integral representation is given for the conditional probability P(I,θ, t¦I₀, θ₀, t₀) that the system is at I, θ at t, given it was at I₀, θ₀ at t₀. By discretizing time into steps of size ?, we show how to evaluate physical observables for large k, fixed ?. An explicit calculation of a diffusion coefficient in a two degrees of freedom problem is reported. Passage to ? = 0, the original hamiltonian flow, is discussed.     

Effect of an electric field on the I–V curves of DyBa2Cu3−x Oy/1 wt % Pt HTSC ceramics

This paper reports on an experimental study of the effect of a magnetic field, B≤70 G, and an electric field, E=120 MV/m, on the critical current I _c and I–V curves of DyBa₂Cu_3?x O_y HTSC ceramics (x=0 and 0.2), both undoped and doped with 1 wt % Pt. It has been established that, in stoichiometric ceramics (x=0) at 77 K, I _c drops sharply (by more than an order of magnitude) already at very low B<1 G. In copper-deficient ceramics (x=0.2), I _c decreases with increasing B slowly, with Pt-doped samples exhibiting [on the dropping I _c (B) dependence] a peak effect, i.e., an increase rather than decrease of I _c at B≈10 G. As for the effect of an electric field on I _c and the I–V curves (the E effect), it is not observed in ceramics of a stoichiometric composition. DyBa₂Cu_2.8O _y samples acted upon by an electric field reveal a substantial increase in I _c and a decrease in the resistance R for I>I _c . In the case of DyBa₂Cu_2.8O_y/Pt, the electric field practically does not affect I _c but R decreases for I>I _c . In a sample placed in a magnetic field, the magnitude of the E effect is observed to correlate with the I _c (B) dependence. In particular, in Pt-doped samples, the E effect decreases with increasing magnetic field B not gradually but with a maximum appearing at B ≈10 G, i.e., in the region of the peak effect in the I _c (B) dependence. The data obtained suggest the conclusion that the electric-field effect in ceramics exhibiting weak links of the superconductor-insulator-superconductor (SIS) type correlates with magnetic vortex pinning.     

Theory of degenerate four-wave mixing in three-level atoms

We derive a theoretical model for phase conjugation in three level atoms. The atoms are assumed to be at rest and the intensities I₁ and I₂ of the pump beams can take arbitrary large values. We calculate the lineshape for a thin optical medium in the case of plane waves and of gaussian beams. In the case of a thick optical medium, we show that the gain saturates if I₁ ≠ I₂.     

Current-induced resistive state of superconducting tin whiskers with indium impurities

We have investigated the current-induced step-like structure in theV?T andV?I characteristics of tin whiskers with a mean free pathl for the electrons which is reduced by indium impurities (up to 3.6 at %). The extrapolation of theV?I characteristics beyond the first voltage step shows a zero-voltage interceptI ₀≈0.5I _c (I _c=critical current). From the differential resistance beyond the first voltage step a lengthL _An1 can be obtained which is proportional tol ^1/2. These results can be understood by assuming phase-slip centers in the whisker which carry a time-averaged supercurrent of approximately 0.5I _c above the critical current, and at which a voltage is developed by the “healing” of nonequilibrium quasiparticles.     

Approximately linear relations between two-nucleon and three-nucleon parameters

The correlation between the triton binding energyE _t and then-d scattering length² a and the zero energy singlet and triplet wound integral I_os and I_ot is investigated, with phaseequivalent separableNN interactions obeying all the important off-shell constraints. It is found that the correlation betweenE _t and² a is stronger than betweenE _t (² a) andI _os ,I _ot separately. A strong correlation is also found between the percentageD-state in the deuteronP _d andI _ot . Fixing all the other off-shell parameters but allowing variations ofI _os andI _ot leads to surprisingly accurate linear relations betweenE _t(² a) andI _os ,I _ot (P _d). These relations depend strongly on the other off-shell parameters.     

Exciton molecule in semiconductors by phonon-assisted two-photon absorption

Direct creation of bi-excitonic states by photon-assisted two-photon absorption in indirect-gap semiconductors is investigated theoretically. The symmetry of the indirect bi-exciton states and of the phonon used are given for the case of Ge. A numerical application to the case of Si shows that the indirect two-photon absorption coefficient for bi-excitonic α²_I (bi-ex) transitions is several orders of magnitude larger than both indirect two-photon interband, α²_I (band), and excitonic, α²_I (exc), transitions. It becomes smaller than both indirect one-photon interband, α¹_I (band), and excitonic, α¹_I (exc), transitions for available laser intensities. The essential contribution to this enhancement of α²_I (bi-ex) is found to be from the resonance effect in the first process and from both the resonance effect and matrix elements included in the second process.     

Structure-property and composition-property relationships for poly(ethylene terephthalate) surfaces modified by helium plasma-based ion implantation

The surfaces of untreated and helium plasma-based ion implantation (He PBII) treated poly(ethylene terephthalate) (PET) samples were characterised by reflectance colorimetry, contact angle studies and measurements of surface electrical resistance. The results were related to the structural and compositional data obtained by the authors earlier on parallel samples by XPS and Raman spectroscopy. Inverse correlations between lightness and I_D/I_G ratio and between chroma and I_D/I_G ratio were obtained, suggesting that the PBII-treated PET samples darken and their colourfulness decreases with the increase of the portion of aromatic sp² carbon rings in the chemical structure of the modified layer. Direct correlation between water contact angle and the I_D/I_G ratio and inverse correlations between surface energy and I_D/I_G ratio and between dispersive component of surface energy and I_D/I_G ratio were found, reflecting that surface wettability, surface energy and its dispersive component decrease with the formation of surface structure, characterised again by enhanced portion of aromatic sp² carbon rings. The surface electrical resistance decreased with the increase of the surface C-content determined by XPS and also with the increase of the surface concentration of conjugated double bonds, reflected by the increase of the π → π* shake-up satellite of the C 1s peak.     

A simple optical device for generating square flat-top intensity irradiation from a gaussian laser beam

A simple optical device, by which a square flat-top intensity irradiation area can be produced from a laser beam having a gaussian profile, is developed. Calculated nonuniformity [(I_max-I_min)/(I_max+I_min)×100] and the efficiency of this optical device (total energy irradiated in the square region/total energy of the gaussian beam) were 3% and 94%, respectively, for the best irradiation condition.     

Effects of cross-correlation between the real and imaginary parts of the quantum noise in a two-mode saturation laser system

A two-mode saturation laser model with cross-correlation between the real and imaginary parts of the quantum noise is considered. The laser intensity Langevin equation and corresponding Fokker-Planck equation are derived by the phase-locking method. The effects of the cross-correlation strength λ between the real and imaginary parts of quantum noise and the cavity decay constant K on the steady-state intensity distribution Q(I₁,I₂), the mean light intensity 〈I〉, the normalization autocorrelation λ₁₁(0) and cross correlation λ₁₂(0) are studied by numerical calculation. The results show that as λ increases the Qs(I₁,I₂) show two extrema, and λ almost does not affect the 〈I〉, λ₁₁(0) and λ₁₂(0) when the laser system is operated far above threshold. Nevertheless, when the laser system is operated at and below threshold, λ makes the curves of Qs(I₁,I₂) have the higher peak and drop faster. Furthermore, it enhances the deviation of λ₁₁(0) and λ₁₂(0) and lessens the mean light intensity 〈I〉 when the laser system is operated at and below threshold.     

Nuclear rotation for low and high spin values

It is shown that a rigorous application of the Peierls-Yoccoz angular momentum projection method leads, in the case ofK=0 rotational bands, to a simple exact expression for the projected energyE _I , which may be especially suitable for numerical calculations. On the basis of this energy law and without making any assumption for the overlapsn(Β) andh(Β), a finite expansion ofE _I in powers ofI( _I +1) is obtained and discussed. Using this finite series a microscopical variable moment of inertia model is presented.     

Laser cooling of Er-doped solids

We consider theoretically a mechanism for laser cooling in rare-earth-doped low-phonon materials based simultaneously on two cooling cycles: a traditional cooling cycle with an anti-Stokes fluorescence transition as well as an infrared-to-visible upconversion cycle, to overcome the self-termination effects in either anti-Stokes or upconversion cooling on its own. Our simulations, performed for erbium-doped potassium-lead chloride crystal (Er³⁺:KPl₂Cl₅) known to be an extremely low phonon energy host, uses two pump wavelengths corresponding to the long wavelength tails of the absorption spectra of the ⁴I_15/2 → ⁴I_13/2 and ⁴I_15/2 → ⁴I_9/2 transitions. The contribution of each pump source to the cooling process is comprehensively investigated. We show that, although the energy gap between ⁴I_15/2 and ⁴I_9/2 levels exceeds the energy gap between ⁴I_15/2 and ⁴I_13/2 levels and cooling process is more efficient with the cycle based on the ⁴I_15/2 → ⁴I_13/2 transition, the second cooling cycle based on the ⁴I_15/2 → ⁴I_9/2 transition can be used as a supplementary one.     

On a new method of causing sensitized luminescence in CaF2:Ce:Mn phosphors

Cathode ray irradiation provides a new method of causing sensitized luminescence in the system CaF₂:Ce:Mn. Energy transfer efficiencies (η = I_Mn/I_total, where I_Mn and I_total are the emission intensity corresponding to the characteristic emission of the Mn²⁺ ions and the total cathodoluminescence, respectively) observed in samples with varying concentrations of Ce and Mn and at different temperatures of excitation indicate a near constancy of these values up to 100°C. This result and the result that transfer efficiencies for cathode ray excitation are greater than those for optical excitation are also explained.     

Impact of average photon-energy coefficient of solar spectrum on the short circuit current of photovoltaic modules

The output energy of photovoltaic (PV) modules is influenced by the spectral irradiance distribution of the solar spectrum under outdoor conditions. To rate the precise output energy of PV modules, the correction of short circuit current (I_SC) based on actual environmental conditions is needed, because I_SC significantly depends on the shape of the spectral irradiance distribution. The average photon energy (APE) is a zero-dimensional index for spectral irradiance distribution, and APE value uniquely describes the shape of a solar spectrum. Thus, APE has an impact on I_SC of PV modules. In this contribution, the relationship between APE coefficient and I_SC of the multi-crystalline silicon, single-crystalline silicon, heterojunction intrinsic thin-layer, back contact, copper indium selenide and cadmium telluride PV modules has explored. It is revealed that APE value changes the I_SC of PV modules which appeared to have immense possibilities of I_SC correction using APE coefficient. This new approach can be very effective for precise rating the output energy of PV modules under actual outdoor conditions.     

Up-conversion and population of excited erbium levels in LiY1−x ErxF4 (x=0.003–1) crystals under CW InGaAs laser-diode pumping

Formation of the inverse population of working levels of 3-μm laser transition in LiY_1−x Er_xF₄ (x=0.003–1) crystals under CW InGaAs laser-diode pumping (0.967–0.982 μm) was investigated. Dependences of population of the ⁴ I _11/2 and ⁴ I _13/2 levels on the dopant concentration and pump power were studied theoretically and experimentally. Relative changes in populations of the studied levels were experimentally monitored by measuring the steady-state spectra of IR crystal luminescence in the wavelength range corresponding to ⁴ I _11/2→⁴ I _13/2 (2.7–2.8 μm), ⁴ I _11/2→⁴ I _15/2 (0.96–1.04 μm), and ⁴ I _13/2→⁴ I _15/2 (1.45–1.65 μm) transitions. Theoretical and experimental estimates of the rates of intracenter and intercenter relaxation processes (migration, self-quenching, and up-conversion) with allowance for statistics of coupling of impurity centers in the system were used to determine the energy-transfer mechanisms, elucidate the predominant mechanisms, and obtain microparameters and concentration dependences of the energy-transfer rates and nonlinear coupling. Dependences of the steady-state population of the levels of laser transition ⁴ I _11/2→⁴ I _13/2 on the dopant concentration and pumping power density were calculated within the context of rate balance equations for the scheme with the five lowest excited states of erbium. Good agreement between theory and experiment was obtained. __________ Translated from Optika i Spektroskopiya, Vol. 92, No. 1, 2002, pp. 73–88. Original Russian Text Copyright ? 2002 by Tkachuk, Razumova, Mirzaeva, Malyshev, Gapontsev.     

Behavior of mixtures of iodine with anthracene,phenazine and thianthrene

The binary systems I₂-phenazine (I₂P), I₂-anthracene and I₂-thianthrene have been investigated over a wide range of concentrations (0.1 < x_I2 < 1) and over temperatures ranging from 0 to 60°C. EMF measurements were performed in the three systems employing galvanic cells with a silver-ion-conducting solid electrolyte in order to determine the possible compounds and their formation Gibbs energies. Only one compound of stoichiometry I₂P is present in the system I₂phenazine and its formation Gibbs energy can be expressed as follows: Δ_FG⁰(I₂P) = ?20830 + 19.7 T(J mol^?1), 273–333 K. Neither the anthracene nor the thianthrene form compounds or solid solutions in the studied ranges of concentrations and temperatures.