Normal-metal hot-electron bolometer with Andreev reflection from superconductor boundaries

This paper describes the design and experimental testing of a high-sensitivity hot-electron bolometer based a film of normal metal, exploiting the Andreev reflection from superconductor boundaries, and cooled with the help of a superconductor-insulator-normal metal junction. At the measured thermal conductivity, G≈6×10⁻¹² W/K, and a time constant of τ=0.2 μs, and a temperature of 300 mK, the estimated noise-equivalent power NEP=5×10⁻¹⁸ W/Hz^1/2, assuming that temperature fluctuations are the major source of noise. At a temperature of 100 mK, the thermal conductivity drops to G≈7×10⁻¹⁴ W/K, which yields NEP=2×10⁻¹⁹ W/Hz^1/2 at a time constant of τ=5 μs. The microbolometer has been designed to serve as a detector of millimeter and FIR waves in space-based radio telescopes. Zh. éksp. Teor. Fiz. 115, 1085–1092 (March 1999)     

Ambient temperature or moderately cooled semiconductor hot electron bolometer for mm and sub-mm regions

A model of semiconductor hot electron bolometer (SHEB), in which electromagnetic radiation heats only electrons in narrow-gap semiconductor without its lattice slow-response heating, is considered. Free carrier heating changes the generation-recombination processes that are the reason of semiconductor resistance rise. It is estimated, that Hg_0.8Cd_0.2Te detector noise equivalent power (NEP) for mm and sub-mm radiation wavelength range can reach NEP ∼10⁻¹¹ W at Δf = 1 Hz signal gain frequency bandwidth. Measurements performed at electromagnetic wave frequencies v = 36, 39, 55, 75 GHz, and at 0.89 and 1.58 THz too, with non-optimized Hg_0.8Cd_0.2Te antenna-coupled bolometer prototype confirmed the basic concept of SHEB. The experimental sensitivity S_v ∼2 V/W at T = 300 K and the calculated both Johnson-Nyquist and generation-recombination noise values gave estimation of SHEB NEP ∼3.5 × 10⁻¹⁰ W at the band-width Δf = 1 Hz and v = 36 GHz.     

Wavelength modulation and cavity enhanced absorption spectroscopy using ～1.9?μm radiation produced by difference frequency generation with a MgO doped PPLN crystal

We have demonstrated the production of ∼1.9 μm near-infrared radiation by using difference frequency generation within a 5% MgO doped PPLN crystal by coupling ∼735 nm radiation from a tunable external cavity diode laser with relatively high powered 532 nm radiation from both Nd:YVO₃ and Nd:YAG lasers. The radiation produced is of low power, ∼15 μW, and was used in conjunction with the sensitivity enhancing techniques of wavelength modulation spectroscopy (WMS) and cavity enhanced absorption spectroscopy (CEAS). Experiments were carried out on rotationally resolved transitions in the combination bands of NH₃ and CO₂ in the 1.9 μm region. An α _min value of 3.6×10⁻⁶ cm⁻¹ Hz^−1/2 was achieved for WMS measurements on CO₂. A comparable α _min value of 2.2×10⁻⁶ cm⁻¹ Hz^−1/2 was achieved for NH₃ using CEAS. The low NIR power indicates that despite the level of MgO doping quoted for the crystal, under prolonged exposure photorefractive damage has occurred.     

Evaluation of a PbTe detector for infrared imaging purposes

Summary An infra-red detector produced by the Elettronica SPA Company for the European Space Agency to be used in the Earth surface mapping from aircraft has been tested in our laboratory. We present the characteristics of the detector working in the spectral range (1÷2.5) μm. The acquisition system and the electronics are discussed and a detailed study of all the noise sources is presented; the measured NEP is 3.2·10⁻¹⁴W Hz^−1/2 at a temperature of 108 K. Paper presented at the V Cosmic Physics National Conference, S. Miniato, November 27–30, 1990.     

Femtosecond laser plasma in CaF<Subscript>2</Subscript> crystal microchannel and effective generation of characteristic X-ray radiation

The dependence of the characteristic X-ray radiation yield from CaF₂ crystal on the formed microchannel depth under highly intensive (I ∼ 3 × 10¹⁵ W/cm²) laser pulses with different contrast was obtained. The maximum of the characteristic X-ray radiation yield at these experimental conditions corresponded to the microchannel depth of 30–50 μm. The efficiency of the laser radiation conversion to the characteristic X-ray radiation increased from 6 × 10⁻⁸ for the surface up to 10⁻⁷ in the microchannel. The dependence of the characteristic X-ray radiation yield on the viewing angle showed that the source of X-ray radiation was located near the surface inside the microchannel.     

Properties of Hg implanted Hg1? x Cd x Te infrared detectors

Experimental performance parameters of Hg implanted Hg_1−x Cd _x Te photovoltaic detectors are analyzed. At 77K, for 8–14 μm band, a comparison is made between performances and theoretical ultimate diffusion limits in low frequency direct detection. Experimental features are well-explained by a model based on the Auger band-to-band process for carrier recombination. Peak detectivities exceeding 10¹¹ cm Hz^1/2W⁻¹, external quantum efficiencies as high as 90%, and zero-bias resistance-area products better than 1 Ω·cm² have been achieved in devices with 12 μm cutoff wavelengths. In the 3–5 μm band performances are far from the diffusion limit. Notwithstanding, at 77K zero-bias resistance-area products are better than 10⁴Ω·cm² and detectivities of the order of 10¹² cm Hz^1/2W⁻¹ were observed at 5 μm. Predominant generation-recombination contribution are present at room temperature in 1–1.3 μm photodiodes whose detectivities, primarily limited by the Johnson noise, at 1.3 μm are higher than 10¹¹ cm Hz^1/2W⁻¹ at 300 K. The high frequency response of the photodiodes is also discussed. Response times as low as 0.5 ns are reached despite some limitations arising from the implanted layer sheet resistance. Work supported by CNR-CISE contract No. 73.01435.     

The theory and experiment of very-long-wavelength 256×1 GaAs/Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Ga<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>As quantum well infrared detector linear arrays

The 256×1 linear array of multiple quantum wells infrared photodetector (QWIP) is designed and fabricated for the peak response wavelength at λ _P = 14.6 μm. The response spectral width is bigger than 2.2 μm. The two-dimensional (2D) diffractive coupling grating has been formed on the top QWIP photosensitive pixel for coupling the infrared radiation to the infrared detective layers. The performance of the device at V _B = 3 V and T = 45 K has the responsibility 4.28×10⁻² (A/W), the blackbody detectivity D _b* = 5.14×10⁹ (cm·Hz^1/2/W), and the peak detectivity D _λ * = 4.24× 10¹⁰ (cm·Hz^1/2/W). The sensor pixels are connected with CMOS read out circuit (ROC) hybridization by indium bumps. When integral time is 100 μs, the linear array has the effective pixel of QWIP FPA N _ef of 99.2%, the average responsibility (V/W) of 3.48×10⁶ (V/W), the average peak detectivity D _λ * of 8.29×10⁹ (cm·Hz^1/2/W), and the non-uniformity U_R of 5.83%. This device is ready for the thermal image application. Supported by the National Natural Science Foundation of China (Grant No. 10374095)     

Telecom-grade fiber laser-based difference-frequency generation and ppb-level detection of benzene vapor in air around 3 μm

We report on the development of a field deployable compact laser instrument tunable over ∼232 cm⁻¹ from 3.16 to 3.41 μm (2932.5–3164.5 cm⁻¹) for chemical species monitoring at the ppb-level. The laser instrument is based on widely tunable continuous-wave difference-frequency generation (DFG), pumped by two telecom-grade fiber lasers. DFG power of ∼0.3 mW near 3.3 μm with a spectral purity of ∼3.3 MHz was achieved by using moderate pumping powers: 408 mW at 1062 nm and 636 mW at 1570 nm. Spectroscopic performance of the developed DFG-based instrument was evaluated with direct absorption spectra of ethylene at 3.23 μm (∼3094.31 cm⁻¹). Absorption spectra of vapor-phase benzene near 3.28 μm (∼3043.82 cm⁻¹) were recorded with Doppler-limited resolution. Line intensities of the most intense absorption lines of the ν ₁₂ band near 3043.8 cm⁻¹ were determined to support development of sensitive mid-infrared trace gas detection of benzene vapor in the atmosphere. Detection of benzene vapor in air at different concentration levels has been performed for the first time using multi-pass cell enhanced direct absorption spectroscopy at ∼3.28 μm with a minimum detectable concentration of 50 ppb (1σ).     

Investigation of the turbulent mixing of thin layers of materials of different density during the laser acceleration of flat multilayer targets in the Iskra-4 facility

The results of the first experiments devised to investigate the mixing of thin layers of Al and Au during the laser acceleration of flat three-layer targets of Si (5 μm), Al (2 μm), and Au (0.05–0.26 μm) by radiation converted to the second harmonic from the Iskra-4 iodine laser with an intensity of 4×10¹³−7×10¹³ W/cm² (τ _0.5∼1 ns), which acts on the Si side of the target. A method for detecting the occurrence of mixing is developed. It is established that under the experimental conditions the thickness of the mixing region is at least ∼0.15 μm. The results of a theoretical analysis of the evolution of the disturbances leading to mixing are presented. Zh. éksp. Teor. Fiz. 111, 882–888 (March 1997) Deceased.     

Small-size resonant photoacoustic cell with reduced window background for laser detection of gases

A photoacoustic resonant cell with the inner volume is ∼0.5 cm³ is presented. The shape of the cell cavity is chosen such as to minimize a background signal arising due to the absorption of laser beam in the cell windows. The experimental setup, the measurement procedure, and the design of the cell are described. The results of detecting ammonia in a nitrogen flow using the R(30) oscillating line of a CO₂ laser are represented. The minimal detectable absorption achieved in experiment is ∼3.2 × 10⁻⁸ cm⁻¹ W Hz^−1/2.     

Optical response of a cold-electron bolometer array

A multielement bolometric receiver system has been developed to measure the power and polarization of radiation at a calculated frequency of 345 GHz. Arrays of ten series-parallel connected cold-electron bolometers have been pairwise integrated into orthogonal ports of a cross-slot antenna. Arrays are connected in parallel in the high-frequency input signal and in series in the output signal, which is measured at a low frequency, and in a dc bias. Such an array makes it possible to increase the output resistance by two orders of magnitude as compared to an individual bolometer under the same conditions of high-frequency matching and to optimize the matching with the JFET amplifier impedance up to dozens of megohms. Parallel connection ensures matching of the input signal to the cross-slot antenna with an impedance of 30 Ω on a massive silicon dielectric lens. At a temperature of 100 mK, a response to the thermal radiation of a thermal radiation source with an emissivity of 0.3, which covers the input aperture of the antenna and is heated to 3 K, is 25 μV/K. Taking into account real noise, the optical fluctuation dc sensitivity is 5 mK, the estimated sensitivity corresponding to the noise of the amplifier is about 10⁻⁴ K/Hz^1/2, and the noise-equivalent power is about (1–5) × 10⁻¹⁷ W/Hz^1/2.     

Millimeter-wave Detectors Based on Antenna-coupled Low-barrier Schottky Diodes

The principles of construction of millimeter wave detectors based on low-barrier Schottky diodes and planar antennas are discussed. The modified planar slot antenna with low beam spillover at the resonant frequency of 94 GHz has been developed. Experiments have been carried out to investigate detecting characteristics of the diodes with differential contact resistances at zero bias. Experimental data are well correspond to calculations in a simple model of detector. At the maximum of rf-to-dc voltage sensitivity - more than 10000 V/W - is obtained. At lower values of a better noise equivalent power (NEP), around 10⁻¹² W Hz^−1/2, is predicted.     

Filler-matrix thermal boundary resistance of diamond-copper composite with high thermal conductivity

A composite material with a high thermal conductivity is obtained by capillary infiltration of copper into a bed of diamond particles of 400 μm size, the particles having been pre-coated with tungsten. The measured thermal conductivity of the composite decreases from 910 to 480 W m⁻¹ K⁻¹ when the coating thickness is increased from 110 to 470 nm. Calculations of the filler/matrix thermal boundary resistance R and the thermal conductivity of the coating layer λ _i using differential effective medium, Lichtenecker’s and Hashin’s models give similar numerical values of R and λ _i ≈ 1.5 W m⁻¹ K⁻¹. The minimal thickness of the coating h ∼ 100 nm necessary for ensuring production of a composite while maximizing its thermal conductivity, is of the same order as the free path of the heat carriers in diamond (phonons) and in copper (electrons). The heat conductance of the diamond/tungsten carbide coating/copper interface when h is of this thickness is estimated as (0.8–1) × 10⁸ W m⁻² K⁻¹ and is at the upper level of values characteristic for perfect dielectric/metal boundaries.     

Excess noise in YBa2Cu3O7 epitaxial films and antenna-type microbolometers based on them

Monte Carlo modelled anneals of YBa₂Cu₃O₇ epitaxial films have been carried out, and the excess flicker noise in the operating frequency and temperature ranges were shown to be dominated by oxygen migration near small-angle block boundaries. Optimization of film and planar-microstructure fabrication permitted reaching a record-low Hooge noise parameter (1.8×10⁻⁴ at 93 K) for test structures, which can be used to prepare high-performance antenna-type strip microbolometers. Calculations show that the reduction of the microstrip size to 1×0.7 μm² and of the flicker noise made possible detection of radiation within the spectral range from 3 mm to 300 μm (100–1000 GHz) at 90 K, with a nanosecond response and a noise-equivalent power of 1.5×10⁻¹² W/Hz^1/2 at frequencies from 30 to 10⁷ Hz, which is close to the limitations imposed by phonon noise. Fiz. Tverd. Tela (St. Petersburg) 41, 1931–1935 (November 1999)     

ESR in the Earth’s magnetic field as a cause of dislocation motion in NaCl crystals

The resonance displacements of the dislocations, l ∼ 100 μm, in NaCl crystals placed in the crossed Earth’s magnetic field B _Earth and the ac field $ \tilde B $ \tilde B ≈ 3 μT of the variable frequency ν ∼ 10⁶ Hz have been discovered in the absence of any other impact on the crystals. Two peaks of the mean dislocation path l(ν) with the maxima at ν₁ = 1.3 MHz and ν₂ = 3 MHz have been observed for the field $ \tilde B $ \tilde B oriented along the vertical and horizontal components of B _Earth, respectively. The effect is explained by the depinning of the dislocations from the impurity centers after their structural transformation due to the ESR in the dislocation-impurity system in the crossed fields. The subsequent motion of the dislocations proceeds under the action of internal stress in the crystals. A physical model has been proposed to explain the strong anisotropy of the effect with respect to the mutual orientation of the dislocation lines and magnetic fields.     

Analysis of trace impurities in semiconductor gas via cavity-enhanced direct frequency comb spectroscopy

Cavity-enhanced direct frequency comb spectroscopy (CE-DFCS) has demonstrated powerful potential for trace-gas detection based on its unique combination of high bandwidth, rapid data acquisition, high sensitivity, and high resolution, which is unavailable with conventional systems. However, previous demonstrations have been limited to proof-of-principle experiments or studies of fundamental laboratory science. Here, we present the development of CE-DFCS towards an industrial application—measuring impurities in arsine, an important process gas used in III–V semiconductor compound manufacturing. A strongly absorbing background gas with an extremely complex, congested, and broadband spectrum renders trace detection exceptionally difficult, but the capabilities of CE-DFCS overcome this challenge and make it possible to identify and quantify multiple spectral lines associated with water impurities. Further, frequency combs allow easy access to new spectral regions via efficient nonlinear optical processes. Here, we demonstrate detection of multiple potential impurities across 1.75–1.95 μm (5710–5130 cm⁻¹), with a single-channel detection sensitivity (simultaneously over 2000 channels) of ∼4×10⁻⁸ cm⁻¹ Hz^−1/2 in nitrogen and, specifically, an absorption sensitivity of ∼4×10⁻⁷ cm⁻¹ Hz^−1/2 for trace water doped in arsine.     

Modeling and analysis of photoconductive detectors based on Hg<Subscript>1-<Emphasis Type="Italic">x</Emphasis></Subscript>Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te for free space optical communication

In this paper we report a theoretical analysis of a long wavelength photoconductive detector for characterizing and optimizing the device in respect of voltage responsivity, quantum efficiency, detectivity and noise equivalent power. The model has been applied to examine the potential of an n-type Hg_0.77Cd_0.23Te photoconductive detector for possible application in free space optical communication system operating at the atmospheric window near 9.6 μ m. In the present analysis we have taken into account all the major recombination mechanisms (e.g., Radiative, Auger, and Shockley-Read-Hall types) including the effect of surface recombination at the interfaces that shape the characteristics of photoconductor. The results obtained on the basis of our analysis reveal that in the absence of surface recombination the device exhibits a peak quantum efficiency of 90%, a maximum detectivity of 10⁸ MHz^1/2/W at 77 K, a 3 dB bandwidth of 117.86 MHz and noise voltage of 5.4 × 10⁻⁶ V/Hz^1/2. The sweep-out effect has been found to degrade the detectivity nearly by a factor of 10 at the same temperature and wavelength of operation. The estimated noise equivalent power of the photodetector is of the order of 10⁻⁹ W at 9.6 μm wavelength.     

Temperature sensitivity and noise of an HTSC Josephson detector on a sapphire bicrystal substrate at 77 K

In YBa₂Cu₃O_{7 − x} films grown on sapphire bicrystal substrates, the Josephson junctions are prepared based on artificial grain boundaries formed by the turn of the crystal lattices about the [100] axis. The films are deposited by the laser ablation method on the buffer CeO₂ layer. The critical film temperature reaches 88.5 K with a transition width of 1.5 K. Junctions from 2 to 3-μ m wide are integrated into the planar log-periodic antennas and their characteristics are measured at 77 K. The characteristic voltage I _c R _n reaches 570 μV. With exposure to external radiation at a frequency of 113 GHz, the Shapiro steps were observed on the current-voltage characteristic. The temperature sensitivity of this detector placed in a quasi-optical receiving unit is measured. At the modulation of the input radiation temperature 77 K/300 K, a response of more than 200 nV is observed at the detector output. At the modulation frequency, intrinsic noise is about 1 nV/Hz^1/2, which corresponds to a temperature resolution of 1 K. Original Russian Text ? M. Tarasov, E. Stepantsov, A. Kalabukhov, M. Kupriyanov, D. Winkler, 2007, published in Pis’ma v Zhurnal éksperimental’noĭ i Teoreticheskoĭ Fiziki, 2007, Vol. 86, No. 11, pp. 828–831.     

Cyclotron resonance in the organic conductor (BEDO-TTF)2ReO4(H2O) in the millimeter wavelength band

Resonant microwave absorption in a (BEDO-TTF)₂ReO₄(H₂O) organic conductor single crystal at a temperature of 1.9 K, a magnetic field of up to 70 kOe, and in the frequency band between 30 and 120 GHz has been studied. A spectral component due to the cyclotron resonance (CR) of two-dimensional charge carriers has been identified for ν⩾80 GHz and H⩾10 kOe. The effective mass m(ω) increases with the frequency from m≈0.8m ₀ at ν=80 GHz to m≈0.95m ₀ at ν=120 GHz. Measurements of the CR line position and FWHM as functions of frequency yield an independently determined imaginary part of the memory function M(ω), which controls the dynamic magnetoconductivity, and the relaxation time τ(ν=100 GHz)≈2.9×10⁻¹¹ s, which is more than thirty times the value of this parameter in the low-frequency limit τ(ν→0). The anomalous behavior of the CR line position and FWHM is caused by the dispersion of both real and imaginary parts of M(ω), which are probably due to strong Fermi-liquid effects. Zh. éksp. Teor. Fiz. 111, 979–987 (March 1997)     

Investigation of a heterodyne receiver with open structure mixer at 324 GHz and 693 GHz

The performance of a submillimeter heterodyne receiver using an HCOOH laser local oscillator and an open structure mixer with a Schottky barrier diode has been optimized for 693 GHz. Working at room temperature a single sideband (SSB) system noise temperature of 7,300 K, a mixer noise temperature of 6,100 K and a conversion loss of 12 dB has been achieved. The same receiver system has been investigated at 324 GHz using an HCOOD laser local oscillator yielding a noise temperature of 3,100 K (SSB), a mixer noise temperature of 2,400 K (SSB) and a conversion loss of 10 dB (SSB). An acousto-optical spectrometer has also been constructed, with 1024 channels and a channel-bandwidth of 250 kHz. The system NEP per channel was 2.5×10^–17 W/Hz^1/2 at 324 GHz and 5.0×10^–17 W/Hz^1/2 at 693 GHz.