溶液法制备PVP为界面修饰层的红荧烯结晶性薄膜

为了获得低成本、高结晶度的红荧烯薄膜,采用溶液加工的方法和聚合物界面修饰层研究了红荧烯薄膜的性质。首先,通过旋涂方法在Si/SiO₂衬底上先沉积一层聚乙烯吡咯烷酮（PVP）作为界面修饰层,利用偏光显微镜（POM）、原子力显微镜（AFM）研究了PVP层表面形貌及粗糙度。接着在PVP上滴涂红荧烯溶液后固化烘干,制备红荧烯晶体薄膜,研究了不同PVP浓度和不同成膜温度下界面修饰层对红荧烯表面形貌的影响。然后,利用X射线衍射（XRD）表征对比研究了薄膜的微观结构。最后,分析了红荧烯晶体薄膜的生长机制。实验结果表明：80~140℃及低浓度的PVP条件下能得到结晶度高、连续的红荧烯球晶,并且温度升高时,球晶尺寸变大。PVP作为界面修饰层有利于改善红荧烯的成膜性,制备高结晶度的晶体薄膜。     

High temperature reaction and defect chemistry at the Si/SiO2 interface

The generation of structural and electrical defects in Si/SiO₂ structures upon high temperature annealing by the oxide decomposition reaction Si+SiO₂→2SiO ↑ has been studied using scanning electron microscopy (SEM) and ramped current-voltage measurements. The SiO decomposition is nucleated at crystalline defects in the substrate and results in the formation of voids in the oxide. The voids grow laterally with annealing time, independent of the nature of the defect. Prior to the formation of physical voids in the oxide, defects become electrically active, leading to low field dielectric breakdown. The breakdown degradation is prevented when the O₂ pressure in the annealing ambient is sufficient to reverse the decomposition reaction by reoxidizing the SiO product at the interface.     

Substrate temperature dependence of the photoluminescence efficiency of co-sputtered Si/SiO2 layers

Si particles embedded in an SiO₂ matrix were obtained by co-sputtering of Si and SiO₂ at various deposition temperatures T_d (200–700°C) and annealing at different temperatures T_a (900–1100°C). The systems were characterized by X-ray photoelectron, Raman scattering, infrared absorption and photoluminescence spectroscopy techniques. The results show that the photoluminescence efficiency is strongly dependent on the degree of phase separation between the Si nanocrystals and the SiO₂ matrix. This is likely connected with the Si/SiO₂ interface characteristics, together with the features indicating the involvement of quantum confinement.     

Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO2 fabricated by ion implantation

A method for the fabrication of luminescent Si nanoclusters in an amorphous SiO₂ matrix by ion implantation and annealing, and the detailed mechanisms for the photoluminescence are reported. We have measured the implanted ion dose, annealing time and excitation energy dependence of the photoluminescence from implanted layers. The samples were fabricated by Si ion implantation into SiO₂ and subsequent high-temperature annealing. After annealing, a photoluminescence band below 1.7 eV has been observed. The peak energy of the photoluminescence is found to be independent of annealing time and excitation energy, while the intensity of the luminescence increases as the annealing time and excitation energy increase. Moreover, we found that the peak energy of the luminescence is strongly affected by the dose of implanted Si ions especially in the high dose range. These results indicate that the photons are absorbed by Si nanoclusters, for which the band-gap energy is modified by the quantum confinement effects, and the emission is not simply due to direct electron–hole recombination inside Si nanoclusters, but is related to defects probably at the interface between Si nanoclusters and SiO₂, for which the energy state is affected by Si cluster–cluster interactions. It seems that Si nanoclusters react via a thin oxide interface and the local concentrations of Si nanoclusters play an important role in the peak energy of the photoluminescence.     

High field phenomena in thin plasma nitrided SiO2 films

The effects of high field tunnel electron injection on the electrical properties of Al - thin plasma nitrided SiO₂ films - Si (p-type) structures are studied. Under high field injection, it has been observed that electron trapping, positive charge generation near the Si-SiO₂ interface (slow states) and fast state generation at the Si-SiO₂ interface have taken place. After high temperature N₂ annealing, the nitridation induced electron trap density is considerably decreased. Furthermore, under high field injection the generation rate of both the slow states and the interface states and consequently, the degradation rate of the nitrided oxide films have been also decreased after annealing.     

THE INTERACTION OF Au AND THE Si/SiO2 INTERFACE DEFECT Hit(0.494)

The defects at the Si/SiO₂ interface have been studied by the deep-level transient spectroscopy (DLTS) technique in p-type MOS structures with and without gold diffusion. The experimental results show that the interaction of gold and Si/SiO₂ interface defect,H_it(0.494), results in the formation of a new interface de-fect, Au-H_it(0.445). Just like the interface defect, H_it(0.494), the new interface defect possesses a few interesting properties, for example, when the gate voltage applied across the MOS structure reduces the energy interval between Fermi-level and Si valence band of the Si surface to values smaller than the hole ionization Gibbs free energy of the defect, a sharp DLTS peak is still observable; and the hole apparent activation energy increases with the decrease of the Si surface potential barrier height. These properties can be successfully explained with the transition energy band model of the Si/SiO₂ interface.     

Visible and infrared photoluminescence from Er-doped SiOx

The annealing behaviors of photoluminescence of SiO_x and Er-doped SiO_x grown by molecular beam epitaxy in the wavelength range of visible and infrared light are studied. For SiO_x, four PL bands located at 510, 600, 716 and 810 nm, respectively, are observed. For Er-doped SiO_x, the 716 nm band, which is believed to be originated from the electron–hole recombination at the interface between crystalline Si and amorphous SiO₂, disappears in the annealing temperature range of 500–900°C. It is suggested the enhancement of Er luminescence is partially due to the energy transfer from the recombination at the interface between crystalline Si and SiO₂ to Er ions.     

Amorphous Si/insulator multilayers grown by vacuum deposition and electron cyclotron resonance plasma treatment

a-Si/insulator multilayers have been deposited on (0 0 1) Si by electron gun Si evaporation and periodic electron cyclotron resonance plasma oxidation or nitridation. Exposure to an O or N plasma resulted in the formation of a thin SiO₂ and SiN_x layer whose thickness was self-limited and controlled by process parameters. For thin-layer (2 nm) Si/SiO₂ and Si/SiN_x multilayers no visible photoluminescence (PL) was observed in most samples, although all exhibited weak “blue” PL. For the nitride multilayers, annealing at 750°C or 850°C induced visible PL that varied in peak energy with Si layer thickness. Depth profiling of a-Si caps on thin insulating layers revealed no detectable contamination for the SiN_x layers, but substantial O contamination for the SiO₂ films.     

氧化物隔离对Si基片上生长L1_0相FePt薄膜磁性的影响

用MgO和SiO_2两种氧化物将FePt薄膜与Si(100)基片隔离,分析隔离层在FePt层发生A1→L1_0转变过程中的作用,寻找用Si母材涂敷L1_0-FePt磁性层来提高磁力显微镜针尖矫顽力的合理方案.采用磁控溅射法在400?C沉积Fe Pt薄膜,在不同温度进行2 h的真空热处理,分析晶体结构和磁性的变化.结果表明:没有隔离层,Si基片表层容易发生扩散,50 nm厚FePt薄膜的矫顽力最大只有5kOe(1 Oe=10~3/(4π)A·m~(-1));而插入隔离层,矫顽力可以超过10 kOe;MgO在Si基片上容易碎裂,热处理温度不能高于600?C,用作隔离层,FePt的最大矫顽力为12.4 kOe;SiO_2与Si基片的晶格匹配更好,热膨胀系数差较小,能承受的最高热处理温度可以超过800?C,使得Fe Pt的矫顽力可以在5 kOe到15 kOe范围内调控,更适合用于制作矫顽力高并可控的磁力显微镜针尖.     

Si–SiO2 interface formation in low-dose low-energy separation by implanted oxygen materials

The evolution of the Si–SiO₂ interface morphology of low-dose low-energy separation by implanted oxygen materials was investigated by transmission electron microscopy and atomic force microscopy. The Si–SiO₂ interface morphology and the RMS roughness are strongly affected by the implantation conditions and the annealing process. Three main types of the domains including round, square, and pyramid shapes with the step-terrace structure were observed on the buried SiO₂ surface. Round domains are observed in the early stage of the annealing process, while the square and pyramid domains are observed after the high temperature annealing. The mean RMS roughness decreases with increasing time and annealing temperature, while in the 1350 °C 4-h annealed samples, the mean RMS roughness decreases with either increasing the implantation dose or decreasing implantation energy. The scaling analysis shows that the Si–SiO₂ interfaces were found to be self-affine on the short length scales with a roughness exponent above 0.50. Qualitative mechanisms of Si–SiO₂ surface flattening are presented in terms of the variations of morphological features with the processing conditions.     

Toplayer-dependent crystallographic orientation imaging in the bilayer two-dimensional materials with transverse shear microscopy

Nanocontact properties of two-dimensional (2D) materials are closely dependent on their unique nanomechanical systems, such as the number of atomic layers and the supporting substrate. Here, we report a direct observation of toplayer-dependent crystallographic orientation imaging of 2D materials with the transverse shear microscopy (TSM). Three typical nanomechanical systems, MoS₂ on the amorphous SiO₂/Si, graphene on the amorphous SiO₂/Si, and MoS₂ on the crystallized Al₂O₃, have been investigated in detail. This experimental observation reveals that puckering behaviour mainly occurs on the top layer of 2D materials, which is attributed to its direct contact adhesion with the AFM tip. Furthermore, the result of crystallographic orientation imaging of MoS₂/SiO₂/Si and MoS₂/Al₂O₃ indicated that the underlying crystalline substrates almost do not contribute to the puckering effect of 2D materials. Our work directly revealed the top layer dependent puckering properties of 2D material, and demonstrate the general applications of TSM in the bilayer 2D systems.     

MoO_3/Si界面区钼掺杂非晶氧化硅层形成的第一性原理研究

采用基于密度泛函理论的第一性原理计算方法,通过模拟MoO_3/Si界面反应,研究了MoO_x薄膜沉积中原子、分子的吸附、扩散和成核过程,从原子尺度阐明了缓冲层钼掺杂非晶氧化硅(a-SiO_x(Mo))物质的形成和机理.结果表明,在1500 K温度下, MoO_3/Si界面区由Mo, O, Si三种原子混合,可形成新的稳定的物相.热蒸发沉积初始时, MoO_3中的两个O原子和Si成键更加稳定,同时伴随着电子从Si到O的转移,钝化了硅表面的悬挂键. MoO_3中氧空位的形成能小于SiO_2中氧空位的形成能,使得O原子容易从MoO_3中迁移至Si衬底一侧,从而形成氧化硅层;替位缺陷中, Si替位MoO_3中的Mo的形成能远远大于Mo替位SiO_2中的Si的形成能,使得Mo容易掺杂进入氧化硅中.因此,在晶硅(100)面上沉积MoO_3薄膜时, MoO_3中的O原子先与Si成键,形成氧化硅层,随后部分Mo原子替位氧化硅中的Si原子,最终形成含有钼掺杂的非晶氧化硅层.     

Band bending at the Si(1 1 1)–SiO2 interface induced by low-energy ion bombardment

Experiments employing photoreflectance spectroscopy have uncovered band bending due to electrically active defects at the Si(1 1 1)–SiO₂ interface after sub-keV Ar⁺ ion bombardment. The band bending of about 0.5 eV resembles that for Si(1 0 0)–SiO₂, and both interfaces exhibit two kinetic regimes for the evolution of band bending upon annealing due to defects healing. The healing takes place about an order of magnitude more quickly at the (1 1 1) interface, however, probably because of less fully saturated bonding and higher compressive stress.     

Characterization of SiO2 layers thermally grown on 4H-SiC using high energy photoelectron spectroscopy

Si 2p and C 1s core level spectra recorded at different electron emission angles from SiO₂/SiC samples using a photon energy of 3.0 keV show two components. These are identified as originating from SiO₂ and SiC for Si 2p while for C 1s they are identified to originate from graphite like carbon and SiC. The relative intensity of these components are extracted and compared to calculated intensity variations assuming different models for the elemental distribution in the surface region. For both samples investigated best agreement between experimental and calculated intensity variations with emission angle is obtained when assuming a graphite like layer on top of the oxide layer. Contribution from carbon at the SiC/SiO₂ interface could not be identified.     

A new method to determine Si/SiO2 interface recombination parameters using a gate-controlled point-junction diode under illumination

A new method is presented to determine Si/SiO₂ interface recombination parameters. The device employed is constituted by a polysilicon-oxide-semiconductor capacitor with a microscale central junction (a gate-controlled point-junction diode). The excess minority carriers are photo-generated rather than being injected, which results in a one-dimensional current flow normal to the Si/SiO₂interface. The minority carrier quasi-Fermi level is probed at the Si/SiO₂ interface by means of the point junction. The one-dimensionality of the current flow and the exact knowledge of the minority carrier quasi-Fermi level permit an accurate measurement of the recombination rate. The method has been applied to characterize p-type 100 Si/SiO₂ interfaces with boron dopant concentrations ranging from 2.2×10¹⁵ to 2.0×10¹⁷ cm^-3. Data analysis has been performed using a numerical scheme to find a quasi-exact solution for the current recombining at the interface. It was found that the interface recombination parameters (trap density and capture cross-sections) depend only weakly on trap energy in a wide range around midgap. The cross-section for capturing electrons (σ_n) was found to greatly exceed (by a factor of 10² to 10³) the cross-section for capturing holes (σ_p).     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

LaON/SiO2和HfON/SiO2双隧穿层MONOS存储器存储特性的比较

本文对比研究了LaON/SiO₂和HfON/SiO₂双隧穿层MONOS存储器的存储特性. 实验结果表明,LaON/SiO₂双隧穿层MONOS存储器具有较大的存储窗口,快的编程/擦除速度及好的疲劳和保持特性. 其机理在于LaON较大的介电常数有效提高了编程/擦除过程中载流子的注入效率,较小的O 扩散系数减少了界面陷阱,从而减少了保持期间存储电荷通过陷阱辅助隧穿的泄漏. 而且N的结合在界面附近形成了强的La-N,Hf-N 和O-N键,可有效降低编程/擦除循环应力对界面的损伤,使器件具有好的疲劳特性. 此外,研究了退火温度对存储特性的影响,结果表明800 ℃退火样品的存储特性比700 ℃退火的好,这是因为800 ℃时NO退火可在LaON（HfON）中引入更多的N,且能更好释放应力,使介质中缺陷减少. 关键词： MONOS 双隧穿层 LaON HfON     

用椭圆偏振光法四相模型研究Si SOI光学性质

用椭圆偏振光谱仪在波长为3000到5000?范围内,测量了绝缘衬底上低压CVD生长的多晶Si薄膜(LPCVD Si SOI)及其激光退火和高频感应高温石墨棒热退火后的椭圆偏振光谱参数。以矩阵乘积形式表示了椭偏光谱四相模型,用Monte Carlo统计模拟法求得Si SOI表面多晶Si薄膜的光学参数ε₁和ε₂,并对退火后出Si SOI的晶格完整性进行了讨论。 关键词：     

离子辅助沉积法制备SiO2介质薄膜的应力研究

在高功率垂直腔面发射激光器制作工艺中,生长出低应力、高质量、高稳定性的SiO₂介质层非常关键。我们使用高效率LaB₆离子源辅助,在低放电电流条件下,在GaAs衬底上沉积了SiO₂,并对退火的应力影响进行了测试。在有离子辅助沉积时,对不同生长速率、不同厚度的应力影响进行了研究,对沉积过程进行了分析。结果表明:离子辅助沉积的SiO₂薄膜的应力远小于常规工艺条件下沉积的薄膜的应力,且退火后应力变化小。     

Analysis of frequency-dependent series resistance and interface states of In/SiO2/p-Si (MIS) structures

In this work, the investigation of the interface state density and series resistance from capacitance–voltage (C–V) and conductance–voltage (G/ω−V) characteristics in In/SiO₂/p-Si metal–insulator–semiconductor (MIS) structures with thin interfacial insulator layer have been reported. The thickness of SiO₂ film obtained from the measurement of the oxide capacitance corrected for series resistance in the strong accumulation region is 220 Å. The forward and reverse bias C–V and G/ω−V characteristics of MIS structures have been studied at the frequency range 30 kHz–1 MHz at room temperature. The frequency dispersion in capacitance and conductance can be interpreted in terms of the series resistance (R_s) and interface state density (D_it) values. Both the series resistance R_s and density of interface states D_it are strongly frequency-dependent and decrease with increasing frequency. The distribution profile of R_s–V gives a peak at low frequencies in the depletion region and disappears with increasing frequency. Experimental results show that the interfacial polarization contributes to the improvement of the dielectric properties of In/SiO₂/p-Si MIS structures. The interface state density value of In/SiO₂/p-Si MIS diode calculated at strong accumulation region is 1.11×10¹² eV⁻¹ cm⁻² at 1 MHz. It is found that the calculated value of D_it (≈10¹² eV⁻¹ cm⁻²) is not high enough to pin the Fermi level of the Si substrate disrupting the device operation.