Sn-Bi合金熔体可逆液液结构转变的研究

本文采用直流四电极电阻法研究了Sn-Bi系合金熔体在连续几轮的升降温过程中电阻率随温度的变化规律.结果表明,Sn-Bi合金熔体在连续几轮的升降温过程都出现了电阻率随温度的异常变化.由于电阻率是结构敏感物理参数之一,电阻率随温度的异常变化间接表明合金熔体发生了温度诱导的液态结构转变,而且转变具有一定的可逆性.对比纯锡和纯铋的电阻率实验结果,可以认为结构转变的可逆性主要与合金中Sn的有关.     

液态InSb电阻率和热电势与温度的关系

利用直流四电极法和微差法分别测量了液态InSb的电阻率和热电势与温度的关系,得到了高精度的数据.发现液态InSb的电阻率温度系数在熔点附近随温度升高而增大;在高于617℃的高温区,该液体的电阻率与温度呈较好的线性关系.热电势温度系数在617℃左右也同样存在较明显的变化.结合其他物理性质随温度的变化规律及接近熔点温度的结构特点,可以认为液态InSb在熔点以上存在结构变化. 关键词： 电阻率 热电势 液态InSb 结构转变     

分子束外延生长Sb薄膜及其量子尺寸效应

在GaAs(001)衬底上，用分子束外延生长Sb(111)薄膜，用反射式高能电子衍射仪原位监控生长过程，用透射电子显微镜观察薄膜结构，并用van der Pauw方法测量了电阻率随生长温度的变化，观察到Sb薄膜半金属/半导体转变及其量子尺寸效应． 关键词：     

超导体电输运及交流磁化率双模式测量系统研制

介绍了一种基于小型制冷机的超导转变温度电输运和交流磁化率双模式单腔测量装置。该装置包括电输运法测量和交流磁化率法测量两部分,分别实现对高温超导薄膜样品的超导转变温度的测量。电输运法测量部分利用四点法测量原理对超导薄膜的电阻进行测量,获取电阻随温度变化的曲线;同时利用电流换向法消除热电势带来的测量误差,以进一步提高测量的精度。交流磁化率法测量部分利用的是电磁感应原理和超导磁效应。该部分包含有初级线圈和次级线圈,超导样品放置于两线圈之间。初级线圈用于产生交变激励磁场,次级线圈的输出信号反应了超导样品磁化率的变化,其输出信号由锁相放大器获取。测量过程中使用计算机自动记录测量数据。     

一种永磁磁共振中磁体涡流场的测量方法

磁共振成像（Magntic Resonance Imaging,MRI）技术是一种先进的医疗影像技术.在MRI系统中,通过梯度线圈电流快速切换方向,对待测区域施加梯度磁场,产生的梯度磁场会在其周围的金属体内激发出变化的涡旋电场,进而导致金属体内闭合的回路中产生对原来的梯度电流起抑制作用的感生电流,也就是我们所说的涡流.本文介绍了一种测量磁体涡流场的方法,结合电磁感应定律,设计了一种磁体涡流场测量装置,通过硬件采集以及软件处理的方法,将理想梯度场与实际磁场进行相减并将波形实时呈现,实验结果表明该方法可实现对磁体涡流场的测量.     

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介绍了液态锂回路中的净化及在线检测装置。该装置采用了冷阱法和热阱法,使回路中产生的C、O、N和氢同位素等杂质降至10wppm以下。目前,已经利用四电极测电阻法测量了放锂前后的电阻随温度的变化曲线,再经过多项式拟合,计算得到了纯锂的电阻率随温度变化的函数。     

用于射频谐振腔的纯铌热导率的测量

铌材料的低温热导率是反映射频超导腔热稳定性的重要参数.一套新型的低温热导率测试装置研制成功,该装置不仅可以测量纯铌材料的低温热导率,同时还能够测量铌材料的临界超导温度和铌材料的剩余电阻率(RRR).本文介绍该装置的原理以及实验结果,并对铌材料的低温热导率与剩余电阻率(RRR)进行了分析.     

液态锂回路的净化及在线检测系统

介绍了液态锂回路中的净化及在线检测装置。该装置采用了冷阱法和热阱法,使回路中产生的C、 O、N 和氢同位素等杂质降至10wppm 以下。目前,已经利用四电极测电阻法测量了放锂前后的电阻随温度的变化曲线,再经过多项式拟合,计算得到了纯锂的电阻率随温度变化的函数。     

金属电阻率测量实验的设计与研究

设计了测量金属在不同温度下的电阻率的实验装置,对低温恒温器内的样品进行测量,通过加热装置改变样品温度,获得了铝合金样品和稀土铝合金样品的电阻率随温度的变化曲线.该实验综合了低温、真空、补偿等多方面的物理概念,补充了现行大学物理实验教材中低电阻测定实验的不足.     

基于灰色马尔科夫模型的团簇数量演变预测方法

本文以分子动力学方法模拟液态Si的凝固过程为基础,首次建立基于马尔科夫修正的灰色预测模型对不同团簇的演变过程进行分析,利用该模型对液态Si降温过程中团簇数量的变化进行预测.结果证实应用灰色马尔科夫模型在对团簇结构的演变预测是可行的,采用马尔科夫链预测方法能提高预测结果的准确性,该方法能有效描述凝固过程中团簇的形成和演变的整体变化规律,为研究材料微观结构演变提供了一种新的思路和方法 .     

Hall-Effekt und spezifischer elektrischer Widerstand flüssiger Übergangsmetalle

The Hall-coefficient and the electrical resistivity of liquid transition metals and their alloys with mono- and polyvalent simple metals have been measured with a sensitiveac current-ac magnetic field method. The transport properties of liquid transition metals are quite different from the well known behavior of liquid simple metals. The pure liquid metals La, Ce, Pr, Nd and U and also a great number of alloys of transition metals with simple metals show a positive sign of the Hall-coefficient. For alloys of transition metals with polyvalent simple metals we observed negative temperature coefficients of the electrical resistivity over large concentration ranges. This behavior can be understood by a modified form of the Faber-Ziman formula for the electrical resistivity of liquid metals.     

Electrical resistivity of noble and transition metals using Animalu's model potential

Calculations of the electrical resistivity of several solid noble and transition metals have been carried out using the transition metal model potential proposed by Animalu. It has been found that, except for Cu, Ag and Au, the calculated resistivities of solid transition metals are considerably below the experimental values indicating that the Animalu's model potential fails to account for the electrical resistivities of transition metals. The failure of the Animalu's model potential has been discussed.     

Resistivity superconducting transition in single-crystalline Cd0.95Ni0.05Sb system consisting of non-superconducting CdSb and NiSb phases

Resistivity superconducting transition has been for the first time found in single crystal of two-component 0.95(CdSb)–0.05(NiSb) system. End members of the system are not superconductors under normal conditions. Insulating behavior in temperature dependence of the electrical resistivity, which is due to hopping conductivity, precedes the transition. The resistivity superconducting transition is rather broad, since at cooling down the electrical resistivity starts to fall at 10.5 K, whereas zero resistivity is reached only at ~2.3 K. Longitudinal magnetic field gradually depresses superconductivity and shifts the superconducting transition to lower temperatures. Under magnetic field above 0.5 T, superconductivity is totally destroyed. Main features observed in the resistivity superconducting transition, including its unusually big width and insulating electrical behavior above the transition, can be related to inhomogeneity of the single crystal studied. According to XRD and SEM examinations, the single crystal consists of major CdSb phase and minor NiSb phase. The NiSb phase forms inhomogeneities in the CdSb matrix. Micro-sized needle-like NiSb crystals and nano-sized Ni_1-xSb_x clusters can be considered as typical inhomogeneities.     

Study concerning the electrical resistivity of some liquid metals in ultrasonic field

The increasing of the electrical resistivity values for the overheated high-purity liquid aluminium in range 934 K to 1043 K and for aluminium-silicon eutectic alloy in range 850 K to 960 K, during high-energy ultrasonic field presence is reported. We used DC electrical resistivity measurements. The modification of electrical resistivity values in ultrasonic field due to electron-ion interaction processes and the limited current density in liquid metals is discussed. The effect of cavitation at the high temperature is debated.     

Electrical resistivity of Sn–3.5Ag–xBi solder melts

This article reported the temperature dependence of the electrical resistivity (ρ) of liquid Sn–3.5Ag lead-free solder alloy in continuous heating and cooling processes with varying Bi content in the range of 0, 2, 3.5, 5, and 7?wt.% Abnormal transitions can be observed on ρ–T curves, which indicate liquid–liquid structure transition (LLST) occurs in Sn–3.5Ag–xBi melts. Interestingly, unlike the pattern at first heating cycle, the LLST is reversible during subsequent cooling and heating cycles. Sn may play an important role on the reversibility, and Bi has a noticeable influence on the turning temperatures and characteristics during first heating cycle. The transition mechanism is analyzed from the viewpoint of short-range orders.     

The electrical resistivity of liquid Fe,Co, Ni and Pd

The electrical resistivity of Fe, Co, Ni and Pd has been measired at high temperatures in the solid and liquid state. We discuss the results in the light of recent ideas on the Ziman theory and the spin-disorder scattering of liquid transition metals.     

Silicon-based thin films as bottom electrodes in chalcogenide nonvolatile memories

The effect of the electrical resistivity of a silicon-germanium (SiGe) thin film on the phase transition in a GeSbTe (GST) chalcogenide alloy and the manufacturing aspect of the fabrication process of a chalcogenide memory device employing the SiGe film as bottom electrodes were investigated. While p-type SiGe bottom electrodes were formed using in situ doping techniques, n-type ones could be made in a different manner where phosphorus atoms diffused from highly doped silicon underlayers to undoped SiGe films. The p-n heterojunction did not form between the p-type GST and n-type SiGe layers, and the semiconduction type of the SiGe alloys did not influence the memory device switching. It was confirmed that an optimum resistivity value existed for memory operation in spite of proportionality of Joule heating to electrical resistivity. The very high resistivity of the SiGe film had no effect on the reduction of reset current, which might result from the resistance decrease of the SiGe alloy at high temperatures.     

On the resistivity minimum in amorphous ferromagnetic alloys

We present a theoretical approach which, taking into account the amorphous nature of the system and the correlations between nearest-neighbour magnetic ions, gives a plausible explanation of some features present in the electrical resistivity of amorphous ferromagnetic alloys with transition metals.     

CdSe在高压下的电学性质及相变

 利用在金刚石压砧上集成的微电路,原位测量了CdSe多晶粉末在温度为300~450 K、压力达到23 GPa时电阻率随温度和压力的变化关系。实验结果表明：在加压过程中,电阻率在2.6 GPa压力时出现的异常改变,对应着CdSe从纤锌矿向岩盐矿结构的转变,而在6.0、9.8、17.0 GPa等压力处出现的电阻率异常,则是由CdSe中的电子结构的变化所引起的;在卸压过程中,只在约14.0和3.0 GPa压力下观察到了两个电阻率异常点。通过对电阻率随压力变化曲线的模拟,得出了CdSe高压相的带隙随压力的变化关系,据此预测CdSe金属化的压力应在70~100 GPa之间。变温实验结果表明,在实验的温度和压力范围内,CdSe的电阻率均随温度的增加而升高。